ATE460512T1 - Verfahren zur herstellung hochqualitativer, grossformatiger siliciumcarbidkristalle - Google Patents

Verfahren zur herstellung hochqualitativer, grossformatiger siliciumcarbidkristalle

Info

Publication number
ATE460512T1
ATE460512T1 AT05853093T AT05853093T ATE460512T1 AT E460512 T1 ATE460512 T1 AT E460512T1 AT 05853093 T AT05853093 T AT 05853093T AT 05853093 T AT05853093 T AT 05853093T AT E460512 T1 ATE460512 T1 AT E460512T1
Authority
AT
Austria
Prior art keywords
silicon carbide
quality
producing high
carbide crystals
size silicon
Prior art date
Application number
AT05853093T
Other languages
English (en)
Inventor
Adrian Powell
Valeri Tsevtkov
Mark Brady
Robert Leonard
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE460512T1 publication Critical patent/ATE460512T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT05853093T 2004-12-08 2005-12-07 Verfahren zur herstellung hochqualitativer, grossformatiger siliciumcarbidkristalle ATE460512T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/006,997 US7563321B2 (en) 2004-12-08 2004-12-08 Process for producing high quality large size silicon carbide crystals
PCT/US2005/044081 WO2006062955A1 (en) 2004-12-08 2005-12-07 Process for producing high quality large size silicon carbide crystals

Publications (1)

Publication Number Publication Date
ATE460512T1 true ATE460512T1 (de) 2010-03-15

Family

ID=36572783

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05853093T ATE460512T1 (de) 2004-12-08 2005-12-07 Verfahren zur herstellung hochqualitativer, grossformatiger siliciumcarbidkristalle

Country Status (9)

Country Link
US (1) US7563321B2 (de)
EP (1) EP1828446B1 (de)
JP (1) JP4845142B2 (de)
KR (1) KR100870680B1 (de)
CN (1) CN101072901B (de)
AT (1) ATE460512T1 (de)
DE (1) DE602005019914D1 (de)
TW (1) TWI314958B (de)
WO (1) WO2006062955A1 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8871025B2 (en) * 2006-09-27 2014-10-28 Ii-Vi Incorporated SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation technique
EP2133906A4 (de) * 2007-04-05 2011-11-02 Sumitomo Electric Industries Halbleiterbauelement und verfahren zu seiner herstellung
JP5517930B2 (ja) * 2007-06-27 2014-06-11 トゥー‐シックス・インコーポレイテッド ゆがみ及び反りの少ないＳｉＣ基質の製造
JP4697235B2 (ja) * 2008-01-29 2011-06-08 トヨタ自動車株式会社 ｐ型ＳｉＣ半導体単結晶の製造方法およびそれにより製造されたｐ型ＳｉＣ半導体単結晶
JP2010095397A (ja) * 2008-10-15 2010-04-30 Nippon Steel Corp 炭化珪素単結晶及び炭化珪素単結晶ウェハ
KR101064909B1 (ko) * 2008-12-17 2011-09-16 연세대학교 산학협력단 질소 함유 실리콘 카바이드 제조 장치
US9296846B2 (en) * 2008-12-18 2016-03-29 The Trustees Of The University Of Pennsylvania Porous polymer coating for tooth whitening
US8377806B2 (en) 2010-04-28 2013-02-19 Cree, Inc. Method for controlled growth of silicon carbide and structures produced by same
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en) * 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
JP6070328B2 (ja) * 2013-03-22 2017-02-01 住友電気工業株式会社 インゴット、インゴットの製造方法
JP2014189419A (ja) * 2013-03-26 2014-10-06 Sumitomo Electric Ind Ltd インゴット、炭化珪素基板およびインゴットの製造方法
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
CN103320862B (zh) * 2013-06-07 2016-03-30 山东大学 有色碳硅石宝石及其制备方法
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP6374354B2 (ja) * 2015-06-22 2018-08-15 トヨタ自動車株式会社 ＳｉＣ結晶の製造方法
JP6628557B2 (ja) * 2015-11-02 2020-01-08 昭和電工株式会社 炭化珪素単結晶の製造方法
KR20230097206A (ko) 2017-03-29 2023-06-30 팔리두스, 인크. SiC 용적측정 형태 및 보올을 형성하는 방법
CN107190323A (zh) * 2017-06-06 2017-09-22 宝鸡文理学院 一种生长低缺陷碳化硅单晶的方法
TWI663297B (zh) 2017-10-06 2019-06-21 環球晶圓股份有限公司 碳化矽晶體及其製造方法
JP7024622B2 (ja) 2018-06-19 2022-02-24 株式会社デンソー 炭化珪素単結晶およびその製造方法
US11613470B2 (en) * 2019-06-06 2023-03-28 Ngk Insulators, Ltd. SiC powder and method for manufacturing same, electrically heated honeycomb structure and method for manufacturing same
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
KR102325007B1 (ko) * 2019-12-10 2021-11-11 주식회사 포스코 탄화규소 단결정 성장 장치
JP7817163B2 (ja) 2019-12-27 2026-02-18 ウルフスピード インコーポレイテッド 大口径炭化ケイ素ウェハ
US11519098B2 (en) 2020-01-29 2022-12-06 Wolfspeed, Inc. Dislocation distribution for silicon carbide crystalline materials
US20230160103A1 (en) * 2020-04-22 2023-05-25 Sumitomo Electric Industries, Ltd. Silicon carbide single crystal and method of manufacturing silicon carbide single crystal
TWI777692B (zh) * 2020-08-17 2022-09-11 環球晶圓股份有限公司 碳化矽晶圓及其製備方法
US12125701B2 (en) 2020-12-15 2024-10-22 Wolfspeed, Inc. Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
US12024794B2 (en) 2021-06-17 2024-07-02 Wolfspeed, Inc. Reduced optical absorption for silicon carbide crystalline materials
JP2024008875A (ja) * 2022-07-08 2024-01-19 環球晶圓股▲ふん▼有限公司 炭化ケイ素結晶および炭化ケイ素ウェハ

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01108200A (ja) 1987-10-19 1989-04-25 Sanyo Electric Co Ltd ＳｉＣインゴツトの製造方法
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US4886005A (en) * 1987-12-03 1989-12-12 Atlanta Attachment Company Thread undercut attachment for a multi-needle sewing machine
US4946547A (en) 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5210051A (en) * 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
US5200022A (en) 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
US6261363B1 (en) * 1997-01-22 2001-07-17 Yury Alexandrovich Vodakov Technique for growing silicon carbide monocrystals
JP3590485B2 (ja) * 1996-08-26 2004-11-17 新日本製鐵株式会社 単結晶炭化珪素インゴット及びその製造方法
US6537371B2 (en) 1997-01-22 2003-03-25 The Fox Group, Inc. Niobium crucible fabrication and treatment
US6479373B2 (en) 1997-02-20 2002-11-12 Infineon Technologies Ag Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases
US5937317A (en) * 1997-05-08 1999-08-10 Northrop Grumman Corporation Method of making a low resistivity silicon carbide boule
JP3003027B2 (ja) * 1997-06-25 2000-01-24 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
EP1105555B1 (de) * 1998-07-13 2002-04-24 Siemens Aktiengesellschaft VERFAHREN ZUR ZÜCHTUNG VON SiC-EINKRISTALLEN
JP3248071B2 (ja) 1998-10-08 2002-01-21 日本ピラー工業株式会社 単結晶ＳｉＣ
US6306675B1 (en) 1998-10-09 2001-10-23 Arizona Board Of Regents Acting On Behalf Of Arizona State University Method for forming a low-defect epitaxial layer in the fabrication of semiconductor devices
US6218680B1 (en) 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US6396080B2 (en) * 1999-05-18 2002-05-28 Cree, Inc Semi-insulating silicon carbide without vanadium domination
JP3811624B2 (ja) 2001-04-27 2006-08-23 松下電器産業株式会社 半導体装置
US6814801B2 (en) * 2002-06-24 2004-11-09 Cree, Inc. Method for producing semi-insulating resistivity in high purity silicon carbide crystals
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
JP4321107B2 (ja) * 2003-05-13 2009-08-26 株式会社デンソー ＳｉＣ単結晶の製造装置
US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
US7314521B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer

Also Published As

Publication number Publication date
KR20070073954A (ko) 2007-07-10
TW200632154A (en) 2006-09-16
WO2006062955B1 (en) 2006-09-14
TWI314958B (en) 2009-09-21
US20060118037A1 (en) 2006-06-08
WO2006062955A1 (en) 2006-06-15
CN101072901B (zh) 2012-09-26
DE602005019914D1 (de) 2010-04-22
CN101072901A (zh) 2007-11-14
JP2008522943A (ja) 2008-07-03
EP1828446B1 (de) 2010-03-10
KR100870680B1 (ko) 2008-11-26
JP4845142B2 (ja) 2011-12-28
EP1828446A1 (de) 2007-09-05
US7563321B2 (en) 2009-07-21

Similar Documents

Publication Publication Date Title
ATE460512T1 (de) Verfahren zur herstellung hochqualitativer, grossformatiger siliciumcarbidkristalle
EP2327816A3 (de) Verfahren zur Herstellung eines Einkristalles von Siliziumkarbid mit höher Qualität
GB2429212B (en) Single crystal diamond
TW200728523A (en) Epitaxial wafer and method for production of epitaxial wafer
TW200518197A (en) Substrate for nitride semiconductor growth
HUP0401866A1 (hu) Eljárás és berendezés galliumtartalmú nitrid-egykristálytömb előállítására
TW200615406A (en) Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
DE60115435D1 (de) Dicke einkristalline diamantschicht, verfahren zur herstellung der schicht und edelsteine hergestellt durch bearbeitung der schicht
TW200614351A (en) Light emitting element and manufacturing method therefor
TW200741045A (en) Production methods of semiconductor crystal and semiconductor substrate
FR2857982B1 (fr) Procede de fabrication d'une couche epitaxiee
SE0202992L (sv) Enkristall av SiC, förfarande för att tillverka en enkristall av SiC, SiC-skiva med epitaxiellt skikt, förfarande för att tillverka SiC-skiva med epitaxiellt skikt och elektronisk anordning baserad på SiC
EP1722353A3 (de) Hochdruckgeräte für Kristallzüchtung und entsprechende Verfahren
TW200833884A (en) Method for producing self-supporting nitride semiconductor substrate and self-supporting nitride semiconductor substrate
ATE426694T1 (de) Verfahren zur herstellung von grosseneinkristallen von aluminiumnitrid
GB2416623B (en) Substrate of gallium nitride single crystal and process for producing the same
EP1367150A4 (de) Verfahren zur herstellung von halbleiterkristall und halbleiter-leuchtelement
GB0704516D0 (en) Diamond
TW200833883A (en) Process for producing group III nitride crystal, group III nitride crystal substrate, and group III nitride semiconductor device
TW200515488A (en) Group III nitride crystal, method of its manufacture, and equipment for manufacturing group III nitride crystal
TW200734496A (en) High crystalline quality synthetic diamond
TW200628643A (en) Low micropipe 100 mm silicon carbide wafer
RU2006104555A (ru) Твердые алмазы и способы их получения
TW200741044A (en) Semiconductor substrate, electronic device, optical device, and production methods therefor
TW200710293A (en) Method and apparatus for producing group iii nitride crystal

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties