ATE426694T1 - Verfahren zur herstellung von grosseneinkristallen von aluminiumnitrid - Google Patents

Verfahren zur herstellung von grosseneinkristallen von aluminiumnitrid

Info

Publication number
ATE426694T1
ATE426694T1 AT03808366T AT03808366T ATE426694T1 AT E426694 T1 ATE426694 T1 AT E426694T1 AT 03808366 T AT03808366 T AT 03808366T AT 03808366 T AT03808366 T AT 03808366T AT E426694 T1 ATE426694 T1 AT E426694T1
Authority
AT
Austria
Prior art keywords
crystal growth
growth enclosure
single crystals
nucleation site
aluminum nitride
Prior art date
Application number
AT03808366T
Other languages
English (en)
Inventor
Leo Schowalter
Glen Slack
J Rojo
Original Assignee
Crystal Is Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crystal Is Inc filed Critical Crystal Is Inc
Application granted granted Critical
Publication of ATE426694T1 publication Critical patent/ATE426694T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
AT03808366T 2002-12-20 2003-05-07 Verfahren zur herstellung von grosseneinkristallen von aluminiumnitrid ATE426694T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/324,998 US6770135B2 (en) 2001-12-24 2002-12-20 Method and apparatus for producing large, single-crystals of aluminum nitride

Publications (1)

Publication Number Publication Date
ATE426694T1 true ATE426694T1 (de) 2009-04-15

Family

ID=32710778

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03808366T ATE426694T1 (de) 2002-12-20 2003-05-07 Verfahren zur herstellung von grosseneinkristallen von aluminiumnitrid

Country Status (8)

Country Link
US (1) US6770135B2 (de)
EP (1) EP1587971B1 (de)
JP (1) JP2006511432A (de)
AT (1) ATE426694T1 (de)
AU (1) AU2003303485A1 (de)
CA (1) CA2508883A1 (de)
DE (1) DE60326884D1 (de)
WO (1) WO2004061896A2 (de)

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US20060005763A1 (en) 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US7042020B2 (en) * 2003-02-14 2006-05-09 Cree, Inc. Light emitting device incorporating a luminescent material
US7361220B2 (en) * 2003-03-26 2008-04-22 Matsushita Electric Industrial Co., Ltd. Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method
DE10335538A1 (de) * 2003-07-31 2005-02-24 Sicrystal Ag Verfahren und Vorrichtung zur AIN-Einkristall-Herstellung mit gasdurchlässiger Tiegelwand
EP1741807B1 (de) * 2004-04-27 2013-09-25 Panasonic Corporation Vorrichtung zur herstellung eines kristalls eines nitrids eines elements der gruppe iii und verfahren zur herstellung eines kristalls eines nitrids eines elements der gruppe iii
US7294199B2 (en) * 2004-06-10 2007-11-13 Sumitomo Electric Industries, Ltd. Nitride single crystal and producing method thereof
EP1612300B1 (de) * 2004-06-30 2010-05-26 Sumitomo Electric Industries, Ltd. Verfahren zur Herstellung eines AlN-Einkristalles
CN100447310C (zh) * 2004-07-15 2008-12-31 住友电气工业株式会社 氮化物单晶和其生产方法
JP4522898B2 (ja) * 2005-03-25 2010-08-11 日本碍子株式会社 単結晶製造装置
JP2006290677A (ja) * 2005-04-11 2006-10-26 Hitachi Cable Ltd 窒化物系化合物半導体結晶の製造方法及び窒化物系化合物半導体基板の製造方法
US8349077B2 (en) * 2005-11-28 2013-01-08 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
US7641735B2 (en) * 2005-12-02 2010-01-05 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
JP2007273946A (ja) * 2006-03-10 2007-10-18 Covalent Materials Corp 窒化物半導体単結晶膜
WO2007122949A1 (ja) * 2006-03-23 2007-11-01 Ngk Insulators, Ltd. 窒化物単結晶の製造装置
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
CN101454487B (zh) 2006-03-30 2013-01-23 晶体公司 氮化铝块状晶体的可控掺杂方法
EE05028B1 (et) * 2006-03-31 2008-06-16 O� Krimelte K„siaplikaatori kinnitus
JP4936310B2 (ja) * 2006-04-07 2012-05-23 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造装置
US7524376B2 (en) * 2006-05-04 2009-04-28 Fairfield Crystal Technology, Llc Method and apparatus for aluminum nitride monocrystal boule growth
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
JP5730484B2 (ja) 2007-01-26 2015-06-10 クリスタル アイエス インコーポレイテッド 厚みのある擬似格子整合型の窒化物エピタキシャル層
DE102007006731B4 (de) * 2007-02-06 2011-07-28 Forschungsverbund Berlin e.V., 12489 Verfahren und Vorrichtung zur Herstellung von Zinkoxid-Einkristallen aus einer Schmelze
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
JP2009137777A (ja) 2007-12-04 2009-06-25 Sumitomo Electric Ind Ltd ＡｌＮ結晶およびその成長方法
FR2929959B1 (fr) * 2008-04-10 2010-08-27 Commissariat Energie Atomique Procede de preparation de polycristaux et de monocristaux d'oxyde de zinc (zno) sur un germe par sublimation activee chimiquement a haute temperature
JP5418210B2 (ja) * 2009-01-16 2014-02-19 住友電気工業株式会社 窒化物半導体結晶の製造方法、ＡｌＮ結晶および窒化物半導体結晶の製造装置
JP5418236B2 (ja) * 2009-01-23 2014-02-19 住友電気工業株式会社 窒化物半導体結晶の製造装置、窒化物半導体結晶の製造方法および窒化アルミニウム結晶
JP5257959B2 (ja) * 2009-04-24 2013-08-07 独立行政法人産業技術総合研究所 窒化アルミニウム単結晶の製造装置、窒化アルミニウム単結晶の製造方法
JP5806734B2 (ja) * 2010-06-30 2015-11-10 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 熱勾配制御による窒化アルミニウム大単結晶成長
US20130000552A1 (en) * 2011-06-28 2013-01-03 Nitride Solutions Inc. Device and method for producing bulk single crystals
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
CN103668077B (zh) * 2012-09-14 2017-08-29 深圳富泰宏精密工业有限公司 蒸发装置及应用该蒸发装置的真空蒸镀机
US9299880B2 (en) 2013-03-15 2016-03-29 Crystal Is, Inc. Pseudomorphic electronic and optoelectronic devices having planar contacts
WO2018051772A1 (ja) * 2016-09-14 2018-03-22 スタンレー電気株式会社 Ｉｉｉ族窒化物積層体、及び該積層体を有する半導体デバイス
WO2018232080A1 (en) * 2017-06-16 2018-12-20 Crystal Is. Inc. Two-stage seeded growth of large aluminum nitride single crystals
CN107740181A (zh) * 2017-10-30 2018-02-27 中国电子科技集团公司第四十六研究所 一种添加辅助气氛的氮化铝pvt生长方法
US10550493B2 (en) 2017-11-10 2020-02-04 Crystal Is, Inc. Thermal control for formation and processing of aluminum nitride
CN108275664B (zh) * 2017-12-29 2021-12-07 奥趋光电技术(杭州)有限公司 一种用于氮化铝的高温烧结提纯方法
DE112019003108B4 (de) 2018-06-19 2024-05-23 Crystal Is, Inc. Verfahren zur Verbesserung der Ultraviolett-(UV-)Transparenz eines einkristallinen AlN-Volumenkristalls, einkristalliner AlN Volumenkristall mit verbesserter Ultraviolett-(UV)-Transparenz, Verfahren zur Herstellung von einkristallinem Aluminiumnitrid (AlN), einkristallines Aluminiumnitrid (AlN), AlN-Einkristall, Verwendung eines AlN-Einkristalls für die Herstellung einer lichtemittierende Diode (LED) und polykristalline AlN-Keramik
US20210047749A1 (en) * 2019-08-15 2021-02-18 Robert T. Bondokov Diameter expansion of aluminum nitride crystals during growth by physical vapor transport

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JPH0859386A (ja) * 1994-08-22 1996-03-05 Mitsubishi Materials Corp 半導体単結晶育成装置
JP3876473B2 (ja) * 1996-06-04 2007-01-31 住友電気工業株式会社 窒化物単結晶及びその製造方法
US5858086A (en) * 1996-10-17 1999-01-12 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride
EP0979883A4 (de) * 1997-12-25 2003-10-15 Japan Energy Corp Verfahren und vorrichtung zur herstellung von einkristallen von verbundhalbleitern und einkristalle von verbundhalbleitern
US6045612A (en) * 1998-07-07 2000-04-04 Cree, Inc. Growth of bulk single crystals of aluminum nitride
US6048813A (en) * 1998-10-09 2000-04-11 Cree, Inc. Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys
US6063185A (en) 1998-10-09 2000-05-16 Cree, Inc. Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy
US6086672A (en) * 1998-10-09 2000-07-11 Cree, Inc. Growth of bulk single crystals of aluminum nitride: silicon carbide alloys
RU2158789C1 (ru) * 1999-08-04 2000-11-10 Водаков Юрий Александрович Способ эпитаксиального выращивания монокристаллического нитрида алюминия и ростовая камера для осуществления способа

Also Published As

Publication number Publication date
WO2004061896A2 (en) 2004-07-22
US20030168003A1 (en) 2003-09-11
JP2006511432A (ja) 2006-04-06
DE60326884D1 (de) 2009-05-07
AU2003303485A2 (en) 2004-07-29
EP1587971A4 (de) 2006-02-01
AU2003303485A1 (en) 2004-07-29
EP1587971B1 (de) 2009-03-25
WO2004061896A3 (en) 2004-09-10
CA2508883A1 (en) 2004-07-22
US6770135B2 (en) 2004-08-03
EP1587971A2 (de) 2005-10-26

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