ATE460745T1 - Verfahren zur übertragung einer dünnen, elektrisch aktiven schicht - Google Patents

Verfahren zur übertragung einer dünnen, elektrisch aktiven schicht

Info

Publication number
ATE460745T1
ATE460745T1 AT03750808T AT03750808T ATE460745T1 AT E460745 T1 ATE460745 T1 AT E460745T1 AT 03750808 T AT03750808 T AT 03750808T AT 03750808 T AT03750808 T AT 03750808T AT E460745 T1 ATE460745 T1 AT E460745T1
Authority
AT
Austria
Prior art keywords
thin film
face
initial substrate
substrate
buried
Prior art date
Application number
AT03750808T
Other languages
English (en)
Inventor
Cioccio Lea Di
Fabrice Letertre
Elsa Hugonnard-Bruyere
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Application granted granted Critical
Publication of ATE460745T1 publication Critical patent/ATE460745T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment

Landscapes

  • Led Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Crystal (AREA)
AT03750808T 2002-07-18 2003-07-15 Verfahren zur übertragung einer dünnen, elektrisch aktiven schicht ATE460745T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0209118A FR2842648B1 (fr) 2002-07-18 2002-07-18 Procede de transfert d'une couche mince electriquement active
PCT/FR2003/002225 WO2004010494A2 (fr) 2002-07-18 2003-07-15 Procede de transfert d'une couche mince electriquement active

Publications (1)

Publication Number Publication Date
ATE460745T1 true ATE460745T1 (de) 2010-03-15

Family

ID=29797545

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03750808T ATE460745T1 (de) 2002-07-18 2003-07-15 Verfahren zur übertragung einer dünnen, elektrisch aktiven schicht

Country Status (9)

Country Link
US (1) US20050282358A1 (de)
EP (1) EP1523771B8 (de)
JP (1) JP2005533384A (de)
AT (1) ATE460745T1 (de)
AU (1) AU2003269024A1 (de)
DE (1) DE60331653D1 (de)
FR (1) FR2842648B1 (de)
TW (1) TWI240960B (de)
WO (1) WO2004010494A2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US7402520B2 (en) 2004-11-26 2008-07-22 Applied Materials, Inc. Edge removal of silicon-on-insulator transfer wafer
US7208325B2 (en) 2005-01-18 2007-04-24 Applied Materials, Inc. Refreshing wafers having low-k dielectric materials
US7659206B2 (en) 2005-01-18 2010-02-09 Applied Materials, Inc. Removal of silicon oxycarbide from substrates
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
DE102005052357A1 (de) 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
DE102005052358A1 (de) * 2005-09-01 2007-03-15 Osram Opto Semiconductors Gmbh Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement
US7762114B2 (en) 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US20070125646A1 (en) 2005-11-25 2007-06-07 Applied Materials, Inc. Sputtering target for titanium sputtering chamber
DE102006061167A1 (de) * 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US8083963B2 (en) 2007-02-08 2011-12-27 Applied Materials, Inc. Removal of process residues on the backside of a substrate
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
FR2977069B1 (fr) 2011-06-23 2014-02-07 Soitec Silicon On Insulator Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire
US9194189B2 (en) 2011-09-19 2015-11-24 Baker Hughes Incorporated Methods of forming a cutting element for an earth-boring tool, a related cutting element, and an earth-boring tool including such a cutting element

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02218123A (ja) * 1989-02-17 1990-08-30 Matsushita Electron Corp 半導体装置の製造方法
FR2747506B1 (fr) * 1996-04-11 1998-05-15 Commissariat Energie Atomique Procede d'obtention d'un film mince de materiau semiconducteur comprenant notamment des composants electroniques
US6150239A (en) * 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
JPH1197379A (ja) * 1997-07-25 1999-04-09 Denso Corp 半導体基板及び半導体基板の製造方法
FR2774214B1 (fr) * 1998-01-28 2002-02-08 Commissariat Energie Atomique PROCEDE DE REALISATION D'UNE STRUCTURE DE TYPE SEMI-CONDUCTEUR SUR ISOLANT ET EN PARTICULIER SiCOI
FR2777115B1 (fr) * 1998-04-07 2001-07-13 Commissariat Energie Atomique Procede de traitement de substrats semi-conducteurs et structures obtenues par ce procede
JP3697106B2 (ja) * 1998-05-15 2005-09-21 キヤノン株式会社 半導体基板の作製方法及び半導体薄膜の作製方法
JP2000124092A (ja) * 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
FR2797714B1 (fr) * 1999-08-20 2001-10-26 Soitec Silicon On Insulator Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede
JP3655547B2 (ja) * 2000-05-10 2005-06-02 株式会社イオン工学研究所 半導体薄膜の形成方法
FR2816445B1 (fr) * 2000-11-06 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
WO2003046993A1 (fr) * 2001-11-29 2003-06-05 Shin-Etsu Handotai Co.,Ltd. Procede de production de plaquettes soi
US6995075B1 (en) * 2002-07-12 2006-02-07 Silicon Wafer Technologies Process for forming a fragile layer inside of a single crystalline substrate

Also Published As

Publication number Publication date
US20050282358A1 (en) 2005-12-22
TWI240960B (en) 2005-10-01
DE60331653D1 (de) 2010-04-22
FR2842648A1 (fr) 2004-01-23
EP1523771B8 (de) 2010-05-12
AU2003269024A8 (en) 2004-02-09
WO2004010494A2 (fr) 2004-01-29
AU2003269024A1 (en) 2004-02-09
EP1523771A2 (de) 2005-04-20
EP1523771B1 (de) 2010-03-10
JP2005533384A (ja) 2005-11-04
FR2842648B1 (fr) 2005-01-14
TW200407984A (en) 2004-05-16
WO2004010494A3 (fr) 2004-04-08

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Legal Events

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