ATE463840T1 - Transistor mit verbessertem spitzenprofil und herstellungsverfahren dafür - Google Patents

Transistor mit verbessertem spitzenprofil und herstellungsverfahren dafür

Info

Publication number
ATE463840T1
ATE463840T1 AT06786211T AT06786211T ATE463840T1 AT E463840 T1 ATE463840 T1 AT E463840T1 AT 06786211 T AT06786211 T AT 06786211T AT 06786211 T AT06786211 T AT 06786211T AT E463840 T1 ATE463840 T1 AT E463840T1
Authority
AT
Austria
Prior art keywords
transistor
manufacturing process
improved tip
improved
tip profile
Prior art date
Application number
AT06786211T
Other languages
English (en)
Inventor
Mark Bohr
Steven Keating
Thomas Letson
Anand Murthy
Donald O'neill
Willy Rachmady
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE463840T1 publication Critical patent/ATE463840T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
AT06786211T 2005-06-30 2006-06-29 Transistor mit verbessertem spitzenprofil und herstellungsverfahren dafür ATE463840T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/173,660 US7494858B2 (en) 2005-06-30 2005-06-30 Transistor with improved tip profile and method of manufacture thereof
PCT/US2006/025958 WO2007005817A1 (en) 2005-06-30 2006-06-29 Transistor with improved tip profile and method of manufacture thereof

Publications (1)

Publication Number Publication Date
ATE463840T1 true ATE463840T1 (de) 2010-04-15

Family

ID=37201464

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06786211T ATE463840T1 (de) 2005-06-30 2006-06-29 Transistor mit verbessertem spitzenprofil und herstellungsverfahren dafür

Country Status (7)

Country Link
US (2) US7494858B2 (de)
EP (1) EP1897130B1 (de)
KR (1) KR100994857B1 (de)
CN (1) CN101208786B (de)
AT (1) ATE463840T1 (de)
DE (1) DE602006013456D1 (de)
WO (1) WO2007005817A1 (de)

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US7494858B2 (en) 2009-02-24
US7821044B2 (en) 2010-10-26
KR100994857B1 (ko) 2010-11-16
WO2007005817A1 (en) 2007-01-11
CN101208786B (zh) 2010-12-01
EP1897130A1 (de) 2008-03-12
CN101208786A (zh) 2008-06-25
EP1897130B1 (de) 2010-04-07
KR20080015891A (ko) 2008-02-20
US20080135894A1 (en) 2008-06-12
DE602006013456D1 (de) 2010-05-20
US20070004123A1 (en) 2007-01-04

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