ATE466117T1 - Vorrichtung zur abscheidung einer schicht aus polykristallinem silicium auf einem träger - Google Patents

Vorrichtung zur abscheidung einer schicht aus polykristallinem silicium auf einem träger

Info

Publication number: ATE466117T1
Authority: AT; Austria
Prior art keywords: bath; longitudinal side; support; control element; longitudinal
Prior art date: 2003-12-24

Application number

AT04816528T

Other languages

English (en)

Inventor

Christian Belouet

Claude Remy

Original Assignee

Solarforce

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2003-12-24

Filing date

2004-12-10

Publication date

2010-05-15

2004-12-10 Application filed by Solarforce filed Critical Solarforce

2010-05-15 Application granted granted Critical

2010-05-15 Publication of ATE466117T1 publication Critical patent/ATE466117T1/de

Links

229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 2
238000000151 deposition Methods 0.000 abstract 1
230000037431 insertion Effects 0.000 abstract 1
238000003780 insertion Methods 0.000 abstract 1
229910052710 silicon Inorganic materials 0.000 abstract 1
239000010703 silicon Substances 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Silicon Compounds (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Photovoltaic Devices (AREA)
Mechanical Treatment Of Semiconductor (AREA)

AT04816528T 2003-12-24 2004-12-10 Vorrichtung zur abscheidung einer schicht aus polykristallinem silicium auf einem träger ATE466117T1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
FR0351203A FR2864554B1 (fr)	2003-12-24	2003-12-24	Dispositif pour deposer une couche de silicium polycristallin sur un support
PCT/FR2004/050674 WO2005064034A2 (fr)	2003-12-24	2004-12-10	Dispositif pour deposer une couche de silicium polycristallin sur un support

Publications (1)

Publication Number	Publication Date
ATE466117T1 true ATE466117T1 (de)	2010-05-15

Family

ID=34639757

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT04816528T ATE466117T1 (de)	2003-12-24	2004-12-10	Vorrichtung zur abscheidung einer schicht aus polykristallinem silicium auf einem träger

Country Status (10)

Country	Link
US (1)	US8256373B2 (de)
EP (1)	EP1702085B1 (de)
JP (1)	JP4891781B2 (de)
CN (1)	CN1906322B (de)
AT (1)	ATE466117T1 (de)
AU (1)	AU2004309149B2 (de)
DE (1)	DE602004026921D1 (de)
ES (1)	ES2344567T3 (de)
FR (1)	FR2864554B1 (de)
WO (1)	WO2005064034A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN102390926B (zh) *	2011-07-28	2014-05-28	东华大学	一种制备结构色玻璃纤维的方法
FR3008329A1 (fr) *	2013-07-11	2015-01-16	Solarforce	Dispositif pour la formation d'une couche de silicium sur un ruban de carbone
CN105762228B (zh) *	2016-03-03	2017-05-10	黄淮学院	一种新型太阳能电池的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2386359A1 (fr) *	1977-04-07	1978-11-03	Labo Electronique Physique	Procede de depot par immersion en continu, dispositif et produits obtenus
JPS5950640B2 (ja) *	1982-10-20	1984-12-10	株式会社東芝	帯状シリコン結晶の製造装置
FR2550965B1 (fr) *	1983-08-30	1985-10-11	Comp Generale Electricite	Dispositif pour deposer une couche de silicium polycristallin sur un ruban de carbone
FR2561139B1 (fr) *	1984-03-16	1986-09-12	Comp Generale Electricite	Dispositif pour deposer une couche de silicium sur un ruban de carbone
EP1198626A2 (de) *	1999-07-02	2002-04-24	Evergreen Solar Inc.	Kontrolle des randbereichmeniskus während der züchtung von kristallinen bändern

2003
- 2003-12-24 FR FR0351203A patent/FR2864554B1/fr not_active Expired - Fee Related
2004
- 2004-12-10 AT AT04816528T patent/ATE466117T1/de not_active IP Right Cessation
- 2004-12-10 AU AU2004309149A patent/AU2004309149B2/en not_active Ceased
- 2004-12-10 US US10/584,698 patent/US8256373B2/en not_active Expired - Fee Related
- 2004-12-10 CN CN2004800409018A patent/CN1906322B/zh not_active Expired - Fee Related
- 2004-12-10 EP EP04816528A patent/EP1702085B1/de not_active Expired - Lifetime
- 2004-12-10 JP JP2006546272A patent/JP4891781B2/ja not_active Expired - Fee Related
- 2004-12-10 ES ES04816528T patent/ES2344567T3/es not_active Expired - Lifetime
- 2004-12-10 WO PCT/FR2004/050674 patent/WO2005064034A2/fr not_active Ceased
- 2004-12-10 DE DE602004026921T patent/DE602004026921D1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
DE602004026921D1 (de)	2010-06-10
EP1702085B1 (de)	2010-04-28
EP1702085A2 (de)	2006-09-20
US8256373B2 (en)	2012-09-04
AU2004309149A1 (en)	2005-07-14
AU2004309149B2 (en)	2009-10-08
ES2344567T3 (es)	2010-08-31
FR2864554B1 (fr)	2006-03-10
JP4891781B2 (ja)	2012-03-07
US20070214839A1 (en)	2007-09-20
JP2007516927A (ja)	2007-06-28
WO2005064034A3 (fr)	2005-09-01
FR2864554A1 (fr)	2005-07-01
WO2005064034A2 (fr)	2005-07-14
CN1906322A (zh)	2007-01-31
CN1906322B (zh)	2010-05-05

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Legal Events

Date	Code	Title	Description
2010-10-15	RER	Ceased as to paragraph 5 lit. 3 law introducing patent treaties