ATE466310T1 - Halogenierte antireflexbeschichtungen - Google Patents
Halogenierte antireflexbeschichtungenInfo
- Publication number
- ATE466310T1 ATE466310T1 AT02713620T AT02713620T ATE466310T1 AT E466310 T1 ATE466310 T1 AT E466310T1 AT 02713620 T AT02713620 T AT 02713620T AT 02713620 T AT02713620 T AT 02713620T AT E466310 T1 ATE466310 T1 AT E466310T1
- Authority
- AT
- Austria
- Prior art keywords
- polymer
- reflective coatings
- polymer binder
- functional groups
- preferred
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/22—Esters containing halogen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
- C09D133/16—Homopolymers or copolymers of esters containing halogen atoms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Laminated Bodies (AREA)
- Paints Or Removers (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Materials For Photolithography (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2002/004690 WO2003075093A1 (fr) | 2002-02-11 | 2002-02-11 | Enduits halogenes antireflechissants |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE466310T1 true ATE466310T1 (de) | 2010-05-15 |
Family
ID=27787358
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02713620T ATE466310T1 (de) | 2002-02-11 | 2002-02-11 | Halogenierte antireflexbeschichtungen |
| AT08015849T ATE479131T1 (de) | 2002-02-11 | 2002-02-11 | Halogenierte antireflexionsbeschichtungen |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT08015849T ATE479131T1 (de) | 2002-02-11 | 2002-02-11 | Halogenierte antireflexionsbeschichtungen |
Country Status (7)
| Country | Link |
|---|---|
| EP (2) | EP1474724B1 (fr) |
| JP (1) | JP4215647B2 (fr) |
| KR (1) | KR100885094B1 (fr) |
| AT (2) | ATE466310T1 (fr) |
| AU (1) | AU2002245460A1 (fr) |
| DE (2) | DE60237484D1 (fr) |
| WO (1) | WO2003075093A1 (fr) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004101794A (ja) * | 2002-09-09 | 2004-04-02 | Toray Ind Inc | 半導体装置用平坦化組成物 |
| KR101833208B1 (ko) * | 2010-10-22 | 2018-04-13 | 닛산 가가쿠 고교 가부시키 가이샤 | 플루오르계 첨가제를 갖는 실리콘 함유 레지스트 하층막 형성 조성물 |
| US9541829B2 (en) * | 2013-07-24 | 2017-01-10 | Orthogonal, Inc. | Cross-linkable fluorinated photopolymer |
| KR20160118340A (ko) | 2014-02-07 | 2016-10-11 | 올싸거널 인코포레이티드 | 교차-결합 가능한 플루오르화된 포토폴리머 |
| US9671691B2 (en) * | 2014-09-16 | 2017-06-06 | Sumitomo Chemical Company, Limited | Resin, resist composition and method for producing resist pattern |
| TWI662370B (zh) | 2015-11-30 | 2019-06-11 | Rohm And Haas Electronic Materials Korea Ltd. | 與外塗佈光致抗蝕劑一起使用之塗料組合物 |
| KR20240051144A (ko) | 2021-08-27 | 2024-04-19 | 닛산 가가쿠 가부시키가이샤 | 레지스트 하층막 형성 조성물 |
| CN118215887A (zh) * | 2021-09-13 | 2024-06-18 | 日产化学株式会社 | 抗蚀剂下层膜形成用组合物 |
| WO2023120616A1 (fr) | 2021-12-24 | 2023-06-29 | 日産化学株式会社 | Composition pour former un film de sous-couche de réserve ayant un squelette de saccharine |
| CN114702620B (zh) * | 2022-01-19 | 2023-07-14 | 复旦大学 | 一种溴系共聚物以及一种阻燃剂 |
| JPWO2023243476A1 (fr) | 2022-06-15 | 2023-12-21 | ||
| US20260044082A1 (en) | 2022-08-02 | 2026-02-12 | Nissan Chemical Corporation | Resist underlayer film-forming composition |
| WO2024075720A1 (fr) | 2022-10-04 | 2024-04-11 | 日産化学株式会社 | Composition de formation de film de sous-couche de réserve |
| KR20250121560A (ko) | 2022-12-15 | 2025-08-12 | 닛산 가가쿠 가부시키가이샤 | 레지스트 하층막 형성용 조성물 |
| KR20250117436A (ko) | 2022-12-15 | 2025-08-04 | 닛산 가가쿠 가부시키가이샤 | 레지스트 하층막 형성용 조성물 |
| EP4692944A1 (fr) | 2023-03-31 | 2026-02-11 | Nissan Chemical Corporation | Composition pour former un film de sous-couche de photorésine |
| CN120693572A (zh) | 2023-03-31 | 2025-09-23 | 日产化学株式会社 | 抗蚀剂下层膜形成用组合物 |
| WO2025154627A1 (fr) * | 2024-01-17 | 2025-07-24 | 学校法人 関西大学 | Composition de formation de film de sous-couche de lithographie, film de sous-couche de lithographie, composition de réserve positive, film de réserve et procédé de formation de motif de réserve |
| JP2025112335A (ja) * | 2024-01-19 | 2025-08-01 | Dic株式会社 | 硬化性樹脂組成物及び硬化物 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2541527A1 (de) | 1974-09-17 | 1976-03-25 | Nat Res Dev | Hydrogelbildendes polymeres |
| US4061829A (en) | 1976-04-26 | 1977-12-06 | Bell Telephone Laboratories, Incorporated | Negative resist for X-ray and electron beam lithography and method of using same |
| JPS5893003A (ja) * | 1981-11-27 | 1983-06-02 | Mitsubishi Rayon Co Ltd | 光伝送性繊維 |
| JPS62156105A (ja) | 1985-06-20 | 1987-07-11 | Mitsubishi Rayon Co Ltd | メタクリルイミド含有重合体 |
| JP2811725B2 (ja) * | 1989-03-23 | 1998-10-15 | 株式会社総合歯科医寮研究所 | 義歯の製作方法及び義歯製作用光重合型積層レジンシート |
| JP2856932B2 (ja) * | 1991-02-13 | 1999-02-10 | セイコー化成株式会社 | 被覆用組成物 |
| JPH05150197A (ja) * | 1991-12-02 | 1993-06-18 | Seiko Epson Corp | ソフトコンタクトレンズ |
| US5919599A (en) * | 1997-09-30 | 1999-07-06 | Brewer Science, Inc. | Thermosetting anti-reflective coatings at deep ultraviolet |
-
2002
- 2002-02-11 AT AT02713620T patent/ATE466310T1/de not_active IP Right Cessation
- 2002-02-11 AU AU2002245460A patent/AU2002245460A1/en not_active Abandoned
- 2002-02-11 DE DE60237484T patent/DE60237484D1/de not_active Expired - Lifetime
- 2002-02-11 DE DE60236210T patent/DE60236210D1/de not_active Expired - Lifetime
- 2002-02-11 JP JP2003573493A patent/JP4215647B2/ja not_active Expired - Fee Related
- 2002-02-11 WO PCT/US2002/004690 patent/WO2003075093A1/fr not_active Ceased
- 2002-02-11 EP EP02713620A patent/EP1474724B1/fr not_active Expired - Lifetime
- 2002-02-11 EP EP08015849A patent/EP2000852B1/fr not_active Expired - Lifetime
- 2002-02-11 KR KR1020047012331A patent/KR100885094B1/ko not_active Expired - Lifetime
- 2002-02-11 AT AT08015849T patent/ATE479131T1/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003075093A1 (fr) | 2003-09-12 |
| DE60236210D1 (de) | 2010-06-10 |
| JP4215647B2 (ja) | 2009-01-28 |
| ATE479131T1 (de) | 2010-09-15 |
| EP1474724A4 (fr) | 2008-06-18 |
| EP1474724A1 (fr) | 2004-11-10 |
| JP2005526270A (ja) | 2005-09-02 |
| DE60237484D1 (de) | 2010-10-07 |
| KR20040089612A (ko) | 2004-10-21 |
| KR100885094B1 (ko) | 2009-02-20 |
| EP1474724B1 (fr) | 2010-04-28 |
| AU2002245460A1 (en) | 2003-09-16 |
| EP2000852B1 (fr) | 2010-08-25 |
| EP2000852A1 (fr) | 2008-12-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |