ATE467858T1 - Methode zur reduzierung des optischen naheffekts in lithographischen verfahren - Google Patents
Methode zur reduzierung des optischen naheffekts in lithographischen verfahrenInfo
- Publication number
- ATE467858T1 ATE467858T1 AT99950074T AT99950074T ATE467858T1 AT E467858 T1 ATE467858 T1 AT E467858T1 AT 99950074 T AT99950074 T AT 99950074T AT 99950074 T AT99950074 T AT 99950074T AT E467858 T1 ATE467858 T1 AT E467858T1
- Authority
- AT
- Austria
- Prior art keywords
- feature
- main feature
- transferred
- reducing
- lithographic processes
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/164,786 US6120952A (en) | 1998-10-01 | 1998-10-01 | Methods of reducing proximity effects in lithographic processes |
| PCT/US1999/022815 WO2000019272A1 (en) | 1998-10-01 | 1999-09-30 | Methods of reducing proximity effects in lithographic processes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE467858T1 true ATE467858T1 (de) | 2010-05-15 |
Family
ID=22596084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT99950074T ATE467858T1 (de) | 1998-10-01 | 1999-09-30 | Methode zur reduzierung des optischen naheffekts in lithographischen verfahren |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US6120952A (de) |
| EP (1) | EP1125167B1 (de) |
| JP (1) | JP3461336B2 (de) |
| KR (1) | KR20010075482A (de) |
| AT (1) | ATE467858T1 (de) |
| AU (1) | AU6280799A (de) |
| DE (1) | DE69942370D1 (de) |
| WO (1) | WO2000019272A1 (de) |
Families Citing this family (73)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6499003B2 (en) * | 1998-03-03 | 2002-12-24 | Lsi Logic Corporation | Method and apparatus for application of proximity correction with unitary segmentation |
| US6120952A (en) * | 1998-10-01 | 2000-09-19 | Micron Technology, Inc. | Methods of reducing proximity effects in lithographic processes |
| JP2000235251A (ja) * | 1999-02-16 | 2000-08-29 | Sony Corp | 露光パターンの補正方法、露光方法、露光装置、フォトマスクおよび半導体装置 |
| US6467076B1 (en) * | 1999-04-30 | 2002-10-15 | Nicolas Bailey Cobb | Method and apparatus for submicron IC design |
| US6301697B1 (en) * | 1999-04-30 | 2001-10-09 | Nicolas B. Cobb | Streamlined IC mask layout optical and process correction through correction reuse |
| US6335128B1 (en) | 1999-09-28 | 2002-01-01 | Nicolas Bailey Cobb | Method and apparatus for determining phase shifts and trim masks for an integrated circuit |
| US6643616B1 (en) | 1999-12-07 | 2003-11-04 | Yuri Granik | Integrated device structure prediction based on model curvature |
| TW440903B (en) * | 2000-02-15 | 2001-06-16 | Winbond Electronics Corp | Method to reduce the deviation of optical proximity effect in the photolithography process |
| US6361911B1 (en) * | 2000-04-17 | 2002-03-26 | Taiwan Semiconductor Manufacturing Company | Using a dummy frame pattern to improve CD control of VSB E-beam exposure system and the proximity effect of laser beam exposure system and Gaussian E-beam exposure system |
| US6425113B1 (en) * | 2000-06-13 | 2002-07-23 | Leigh C. Anderson | Integrated verification and manufacturability tool |
| US7412676B2 (en) * | 2000-06-13 | 2008-08-12 | Nicolas B Cobb | Integrated OPC verification tool |
| US6777141B2 (en) | 2000-07-05 | 2004-08-17 | Numerical Technologies, Inc. | Phase shift mask including sub-resolution assist features for isolated spaces |
| US6541165B1 (en) | 2000-07-05 | 2003-04-01 | Numerical Technologies, Inc. | Phase shift mask sub-resolution assist features |
| US6516459B1 (en) | 2000-07-10 | 2003-02-04 | Mentor Graphics Corporation | Integrated circuit design correction using fragment correspondence |
| US6430737B1 (en) | 2000-07-10 | 2002-08-06 | Mentor Graphics Corp. | Convergence technique for model-based optical and process correction |
| DE10038928A1 (de) * | 2000-08-09 | 2002-02-28 | Infineon Technologies Ag | Photolithographische Maske |
| US6519760B2 (en) * | 2001-02-28 | 2003-02-11 | Asml Masktools, B.V. | Method and apparatus for minimizing optical proximity effects |
| US6574784B1 (en) * | 2001-06-14 | 2003-06-03 | George P. Lippincott | Short edge management in rule based OPC |
| DE10143723B4 (de) * | 2001-08-31 | 2006-09-28 | Infineon Technologies Ag | Verfahren zur Optimierung eines Layouts für eine Maske zur Verwendung bei der Halbleiterherstellung |
| US7014956B2 (en) * | 2002-01-04 | 2006-03-21 | Intel Corporation | Active secondary exposure mask to manufacture integrated circuits |
| US7013439B2 (en) * | 2002-01-31 | 2006-03-14 | Juan Andres Torres Robles | Contrast based resolution enhancing technology |
| US7293249B2 (en) * | 2002-01-31 | 2007-11-06 | Juan Andres Torres Robles | Contrast based resolution enhancement for photolithographic processing |
| US6803157B2 (en) * | 2002-03-01 | 2004-10-12 | Micron Technology, Inc. | Pattern mask with features to minimize the effect of aberrations |
| US6783904B2 (en) * | 2002-05-17 | 2004-08-31 | Freescale Semiconductor, Inc. | Lithography correction method and device |
| US6973633B2 (en) * | 2002-07-24 | 2005-12-06 | George Lippincott | Caching of lithography and etch simulation results |
| US6934928B2 (en) * | 2002-08-27 | 2005-08-23 | Micron Technology, Inc. | Method and apparatus for designing a pattern on a semiconductor surface |
| US6898779B2 (en) * | 2002-08-28 | 2005-05-24 | Micron Technology, Inc. | Pattern generation on a semiconductor surface |
| US6857109B2 (en) * | 2002-10-18 | 2005-02-15 | George P. Lippincott | Short edge smoothing for enhanced scatter bar placement |
| US6928634B2 (en) * | 2003-01-02 | 2005-08-09 | Yuri Granik | Matrix optical process correction |
| US7147975B2 (en) | 2003-02-17 | 2006-12-12 | Matsushita Electric Industrial Co., Ltd. | Photomask |
| US6777146B1 (en) | 2003-02-21 | 2004-08-17 | International Business Machines Corporation | Method of optical proximity correction with sub-resolution assists |
| US6964032B2 (en) * | 2003-02-28 | 2005-11-08 | International Business Machines Corporation | Pitch-based subresolution assist feature design |
| US7001693B2 (en) * | 2003-02-28 | 2006-02-21 | International Business Machines Corporation | Binary OPC for assist feature layout optimization |
| US7205633B2 (en) * | 2003-06-27 | 2007-04-17 | Micron Technology, Inc. | Capacitor layout orientation |
| US7558419B1 (en) | 2003-08-14 | 2009-07-07 | Brion Technologies, Inc. | System and method for detecting integrated circuit pattern defects |
| US7003758B2 (en) | 2003-10-07 | 2006-02-21 | Brion Technologies, Inc. | System and method for lithography simulation |
| US7073162B2 (en) * | 2003-10-31 | 2006-07-04 | Mentor Graphics Corporation | Site control for OPC |
| DE10356693A1 (de) * | 2003-11-27 | 2005-07-14 | Infineon Technologies Ag | Verfahren zum Erzeugen eines Abbildungsfehler vermeidenden Maskenlayouts für eine Maske |
| US7536660B2 (en) * | 2004-02-24 | 2009-05-19 | Konstantinos Adam | OPC simulation model using SOCS decomposition of edge fragments |
| US7539954B2 (en) * | 2004-02-24 | 2009-05-26 | Konstantinos Adam | OPC simulation model using SOCS decomposition of edge fragments |
| US7234130B2 (en) * | 2004-02-25 | 2007-06-19 | James Word | Long range corrections in integrated circuit layout designs |
| US7861207B2 (en) | 2004-02-25 | 2010-12-28 | Mentor Graphics Corporation | Fragmentation point and simulation site adjustment for resolution enhancement techniques |
| JP2007536581A (ja) | 2004-05-07 | 2007-12-13 | メンター・グラフィクス・コーポレーション | プロセス変動バンドを用いた集積回路レイアウト設計法 |
| US7240305B2 (en) | 2004-06-02 | 2007-07-03 | Lippincott George P | OPC conflict identification and edge priority system |
| US7547945B2 (en) * | 2004-09-01 | 2009-06-16 | Micron Technology, Inc. | Transistor devices, transistor structures and semiconductor constructions |
| US7459248B2 (en) * | 2005-02-24 | 2008-12-02 | James Word | Performing OPC on structures with virtual edges |
| US8037429B2 (en) * | 2005-03-02 | 2011-10-11 | Mentor Graphics Corporation | Model-based SRAF insertion |
| US7493587B2 (en) * | 2005-03-02 | 2009-02-17 | James Word | Chromeless phase shifting mask for integrated circuits using interior region |
| US7381654B2 (en) * | 2005-05-31 | 2008-06-03 | Taiwan Semiconductor Manufacturing Co. | Method for fabricating right-angle holes in a substrate |
| US7282401B2 (en) | 2005-07-08 | 2007-10-16 | Micron Technology, Inc. | Method and apparatus for a self-aligned recessed access device (RAD) transistor gate |
| US7867851B2 (en) | 2005-08-30 | 2011-01-11 | Micron Technology, Inc. | Methods of forming field effect transistors on substrates |
| US7434199B2 (en) * | 2005-09-27 | 2008-10-07 | Nicolas Bailey Cobb | Dense OPC |
| US7700441B2 (en) | 2006-02-02 | 2010-04-20 | Micron Technology, Inc. | Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates |
| US7712068B2 (en) * | 2006-02-17 | 2010-05-04 | Zhuoxiang Ren | Computation of electrical properties of an IC layout |
| US7506285B2 (en) | 2006-02-17 | 2009-03-17 | Mohamed Al-Imam | Multi-dimensional analysis for predicting RET model accuracy |
| US7602001B2 (en) | 2006-07-17 | 2009-10-13 | Micron Technology, Inc. | Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells |
| US7772632B2 (en) | 2006-08-21 | 2010-08-10 | Micron Technology, Inc. | Memory arrays and methods of fabricating memory arrays |
| US7589995B2 (en) | 2006-09-07 | 2009-09-15 | Micron Technology, Inc. | One-transistor memory cell with bias gate |
| US8056022B2 (en) | 2006-11-09 | 2011-11-08 | Mentor Graphics Corporation | Analysis optimizer |
| US7966585B2 (en) * | 2006-12-13 | 2011-06-21 | Mentor Graphics Corporation | Selective shielding for multiple exposure masks |
| US7802226B2 (en) * | 2007-01-08 | 2010-09-21 | Mentor Graphics Corporation | Data preparation for multiple mask printing |
| US7799487B2 (en) * | 2007-02-09 | 2010-09-21 | Ayman Yehia Hamouda | Dual metric OPC |
| US7739650B2 (en) * | 2007-02-09 | 2010-06-15 | Juan Andres Torres Robles | Pre-bias optical proximity correction |
| JP4557994B2 (ja) * | 2007-02-22 | 2010-10-06 | 株式会社日立製作所 | 磁気記録媒体の製造方法 |
| US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
| US8713483B2 (en) | 2007-06-05 | 2014-04-29 | Mentor Graphics Corporation | IC layout parsing for multiple masks |
| CN101349861B (zh) * | 2007-07-19 | 2010-09-08 | 上海华虹Nec电子有限公司 | 平滑规则式光学临近修正光掩膜图形的方法 |
| US7647569B2 (en) * | 2007-08-01 | 2010-01-12 | Micron Technology, Inc. | Systems, methods, and computer-readable media for adjusting layout database hierarchies for more efficient database processing and storage |
| US7805699B2 (en) * | 2007-10-11 | 2010-09-28 | Mentor Graphics Corporation | Shape-based photolithographic model calibration |
| US8037446B2 (en) * | 2008-07-16 | 2011-10-11 | Micron Technology, Inc. | Methods for defining evaluation points for optical proximity correction and optical proximity correction methods including same |
| US8176446B2 (en) | 2008-09-11 | 2012-05-08 | International Business Machines Corporation | Method for compensating for variations in structures of an integrated circuit |
| JP7569930B2 (ja) * | 2020-09-18 | 2024-10-18 | アプライド マテリアルズ インコーポレイテッド | 補助的なフィーチャを用いてデジタルリソグラフィのプロセスウィンドウ及び解像度を改善する方法 |
| US12386264B2 (en) * | 2020-09-18 | 2025-08-12 | Applied Materials, Inc. | Methods to improve process window and resolution for digital lithography with two exposures |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5242770A (en) * | 1992-01-16 | 1993-09-07 | Microunity Systems Engineering, Inc. | Mask for photolithography |
| JP3194155B2 (ja) * | 1992-01-31 | 2001-07-30 | キヤノン株式会社 | 半導体デバイスの製造方法及びそれを用いた投影露光装置 |
| ATE168791T1 (de) * | 1992-04-06 | 1998-08-15 | Microunity Systems Eng | Methode zur herstellung eines lithographischen musters in einem verfahren zur herstellung von halbleitervorrichtungen |
| US5256505A (en) * | 1992-08-21 | 1993-10-26 | Microunity Systems Engineering | Lithographical mask for controlling the dimensions of resist patterns |
| US5447810A (en) * | 1994-02-09 | 1995-09-05 | Microunity Systems Engineering, Inc. | Masks for improved lithographic patterning for off-axis illumination lithography |
| JPH08202020A (ja) * | 1995-01-31 | 1996-08-09 | Sony Corp | フォトマスクにおけるパターン形状評価方法、フォトマスク、フォトマスクの作製方法、フォトマスクのパターン形成方法、並びに露光方法 |
| US5663893A (en) * | 1995-05-03 | 1997-09-02 | Microunity Systems Engineering, Inc. | Method for generating proximity correction features for a lithographic mask pattern |
| JPH0915833A (ja) * | 1995-06-30 | 1997-01-17 | Sony Corp | 露光用マスク作製装置における走査用データ作成装置及び走査用データの作成方法 |
| US5972541A (en) * | 1996-02-27 | 1999-10-26 | Lsi Logic Corporation | Reticle and method of design to correct pattern for depth of focus problems |
| US5707765A (en) * | 1996-05-28 | 1998-01-13 | Microunity Systems Engineering, Inc. | Photolithography mask using serifs and method thereof |
| US5795688A (en) * | 1996-08-14 | 1998-08-18 | Micron Technology, Inc. | Process for detecting defects in photomasks through aerial image comparisons |
| US5821014A (en) * | 1997-02-28 | 1998-10-13 | Microunity Systems Engineering, Inc. | Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask |
| US5958635A (en) * | 1997-10-20 | 1999-09-28 | Motorola, Inc. | Lithographic proximity correction through subset feature modification |
| US5858591A (en) * | 1998-02-02 | 1999-01-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Optical proximity correction during wafer processing through subfile bias modification with subsequent subfile merging |
| US6120952A (en) * | 1998-10-01 | 2000-09-19 | Micron Technology, Inc. | Methods of reducing proximity effects in lithographic processes |
-
1998
- 1998-10-01 US US09/164,786 patent/US6120952A/en not_active Expired - Lifetime
-
1999
- 1999-09-30 AT AT99950074T patent/ATE467858T1/de not_active IP Right Cessation
- 1999-09-30 EP EP99950074A patent/EP1125167B1/de not_active Expired - Lifetime
- 1999-09-30 DE DE69942370T patent/DE69942370D1/de not_active Expired - Lifetime
- 1999-09-30 JP JP2000572719A patent/JP3461336B2/ja not_active Expired - Fee Related
- 1999-09-30 AU AU62807/99A patent/AU6280799A/en not_active Abandoned
- 1999-09-30 KR KR1020017004061A patent/KR20010075482A/ko not_active Ceased
- 1999-09-30 WO PCT/US1999/022815 patent/WO2000019272A1/en not_active Ceased
-
2001
- 2001-01-24 US US09/769,603 patent/US6284419B2/en not_active Expired - Lifetime
- 2001-02-12 US US09/780,407 patent/US6319644B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20010002304A1 (en) | 2001-05-31 |
| AU6280799A (en) | 2000-04-17 |
| JP3461336B2 (ja) | 2003-10-27 |
| DE69942370D1 (de) | 2010-06-24 |
| EP1125167A1 (de) | 2001-08-22 |
| US20010023045A1 (en) | 2001-09-20 |
| US6120952A (en) | 2000-09-19 |
| EP1125167B1 (de) | 2010-05-12 |
| US6284419B2 (en) | 2001-09-04 |
| KR20010075482A (ko) | 2001-08-09 |
| WO2000019272A1 (en) | 2000-04-06 |
| US6319644B2 (en) | 2001-11-20 |
| WO2000019272B1 (en) | 2000-05-25 |
| JP2002526792A (ja) | 2002-08-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |