ATE467910T1 - Photoelektrische dünnschicht- umwandlungsvorrichtung und verfahren zur abscheidung durch zerstäubung - Google Patents

Photoelektrische dünnschicht- umwandlungsvorrichtung und verfahren zur abscheidung durch zerstäubung

Info

Publication number
ATE467910T1
ATE467910T1 AT00301345T AT00301345T ATE467910T1 AT E467910 T1 ATE467910 T1 AT E467910T1 AT 00301345 T AT00301345 T AT 00301345T AT 00301345 T AT00301345 T AT 00301345T AT E467910 T1 ATE467910 T1 AT E467910T1
Authority
AT
Austria
Prior art keywords
substrate
holder
opening
deposition
spacer
Prior art date
Application number
AT00301345T
Other languages
English (en)
Inventor
Masataka Kondo
Takayuki Suzuki
Original Assignee
Kaneka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11048387A external-priority patent/JP2000252505A/ja
Priority claimed from JP11201338A external-priority patent/JP2001026866A/ja
Priority claimed from JP11228524A external-priority patent/JP2001053305A/ja
Application filed by Kaneka Corp filed Critical Kaneka Corp
Application granted granted Critical
Publication of ATE467910T1 publication Critical patent/ATE467910T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/85—Protective back sheets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Light Receiving Elements (AREA)
AT00301345T 1999-02-25 2000-02-21 Photoelektrische dünnschicht- umwandlungsvorrichtung und verfahren zur abscheidung durch zerstäubung ATE467910T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11048387A JP2000252505A (ja) 1999-02-25 1999-02-25 太陽電池モジュール
JP11201338A JP2001026866A (ja) 1999-07-15 1999-07-15 スパッタリングによる成膜方法
JP11228524A JP2001053305A (ja) 1999-08-12 1999-08-12 非単結晶シリコン系薄膜光電変換装置

Publications (1)

Publication Number Publication Date
ATE467910T1 true ATE467910T1 (de) 2010-05-15

Family

ID=27293276

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00301345T ATE467910T1 (de) 1999-02-25 2000-02-21 Photoelektrische dünnschicht- umwandlungsvorrichtung und verfahren zur abscheidung durch zerstäubung

Country Status (5)

Country Link
US (1) US6294722B1 (de)
EP (1) EP1039552B1 (de)
AT (1) ATE467910T1 (de)
AU (1) AU768057B2 (de)
DE (1) DE60044384D1 (de)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001291881A (ja) * 2000-01-31 2001-10-19 Sanyo Electric Co Ltd 太陽電池モジュール
US6962613B2 (en) 2000-03-24 2005-11-08 Cymbet Corporation Low-temperature fabrication of thin-film energy-storage devices
AUPR174800A0 (en) * 2000-11-29 2000-12-21 Australian National University, The Semiconductor processing
JP3870818B2 (ja) * 2002-04-04 2007-01-24 松下電器産業株式会社 プラズマディスプレイパネルの製造方法
US8236443B2 (en) 2002-08-09 2012-08-07 Infinite Power Solutions, Inc. Metal film encapsulation
US7993773B2 (en) 2002-08-09 2011-08-09 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8404376B2 (en) 2002-08-09 2013-03-26 Infinite Power Solutions, Inc. Metal film encapsulation
US8394522B2 (en) 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8021778B2 (en) 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US7449629B2 (en) * 2002-08-21 2008-11-11 Truseal Technologies, Inc. Solar panel including a low moisture vapor transmission rate adhesive composition
US6906436B2 (en) * 2003-01-02 2005-06-14 Cymbet Corporation Solid state activity-activated battery device and method
US7294209B2 (en) 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
US7603144B2 (en) 2003-01-02 2009-10-13 Cymbet Corporation Active wireless tagging system on peel and stick substrate
CN100524585C (zh) * 2003-02-18 2009-08-05 松下电器产业株式会社 等离子体显示屏的制造方法以及基板保持件
CN100479082C (zh) * 2003-04-04 2009-04-15 松下电器产业株式会社 等离子体显示面板的制造方法
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US7888584B2 (en) * 2003-08-29 2011-02-15 Lyden Robert M Solar cell, module, array, network, and power grid
US7211351B2 (en) 2003-10-16 2007-05-01 Cymbet Corporation Lithium/air batteries with LiPON as separator and protective barrier and method
JP4401158B2 (ja) * 2003-12-16 2010-01-20 シャープ株式会社 太陽電池の製造方法
US7494742B2 (en) 2004-01-06 2009-02-24 Cymbet Corporation Layered barrier structure having one or more definable layers and method
JP4222992B2 (ja) * 2004-09-29 2009-02-12 三洋電機株式会社 光起電力装置
DE602005017512D1 (de) 2004-12-08 2009-12-17 Symmorphix Inc Abscheidung von licoo2
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
WO2006122774A1 (en) * 2005-05-17 2006-11-23 Interuniversitair Microelektronica Centrum Vzw Method for the production of photovoltaic cells
KR101146525B1 (ko) * 2005-06-30 2012-05-25 엘지디스플레이 주식회사 기판 고정 지그 및 그 제조방법
WO2007011899A2 (en) 2005-07-15 2007-01-25 Cymbet Corporation Thin-film batteries with polymer and lipon electrolyte layers and method
US7776478B2 (en) 2005-07-15 2010-08-17 Cymbet Corporation Thin-film batteries with polymer and LiPON electrolyte layers and method
EP2067163A4 (de) 2006-09-29 2009-12-02 Infinite Power Solutions Inc Maskierung von flexiblen substraten und materialbeschränkung zum aufbringen von batterieschichten auf diese
US8197781B2 (en) 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
US20080289686A1 (en) * 2007-05-23 2008-11-27 Tae Kyung Won Method and apparatus for depositing a silicon layer on a transmitting conductive oxide layer suitable for use in solar cell applications
KR100927509B1 (ko) * 2007-05-23 2009-11-17 어플라이드 머티어리얼스, 인코포레이티드 태양 전지 분야의 사용에 적합한 레이저 스크라이빙 처리된 투과 도전성 산화물 층 위에 실리콘 층을 증착하는 방법
CN101358333B (zh) * 2007-08-02 2011-05-04 鸿富锦精密工业（深圳）有限公司 溅镀基材固持装置
CN100559612C (zh) * 2007-09-19 2009-11-11 中国科学院上海技术物理研究所 一种用于空间的双结柔性叠层薄膜太阳能电池
CN100580958C (zh) * 2007-09-19 2010-01-13 中国科学院上海技术物理研究所 一种用于空间的三结柔性叠层薄膜太阳能电池
US8268488B2 (en) 2007-12-21 2012-09-18 Infinite Power Solutions, Inc. Thin film electrolyte for thin film batteries
US9334557B2 (en) 2007-12-21 2016-05-10 Sapurast Research Llc Method for sputter targets for electrolyte films
JP5705549B2 (ja) 2008-01-11 2015-04-22 インフィニット パワー ソリューションズ， インコーポレイテッド 薄膜電池および他のデバイスのための薄膜カプセル化
US8440903B1 (en) * 2008-02-21 2013-05-14 Stion Corporation Method and structure for forming module using a powder coating and thermal treatment process
US8350519B2 (en) 2008-04-02 2013-01-08 Infinite Power Solutions, Inc Passive over/under voltage control and protection for energy storage devices associated with energy harvesting
US8906523B2 (en) 2008-08-11 2014-12-09 Infinite Power Solutions, Inc. Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
KR101613671B1 (ko) 2008-09-12 2016-04-19 사푸라스트 리써치 엘엘씨 전자기 에너지에 의해 데이터 통신을 하는 통합 도전성 표면을 가진 에너지 장치 및 그 통신 방법
US8508193B2 (en) 2008-10-08 2013-08-13 Infinite Power Solutions, Inc. Environmentally-powered wireless sensor module
EP2214213A2 (de) * 2009-01-29 2010-08-04 SCHOTT Solar AG Photovoltaisches Modul
DE102009039750A1 (de) * 2009-09-02 2011-03-10 Schott Solar Ag Photovoltaisches Modul
US20120015472A1 (en) * 2009-03-30 2012-01-19 Sanyo Electric Co., Ltd. Method of producing solar cell module
WO2010150675A1 (ja) * 2009-06-25 2010-12-29 三洋電機株式会社 太陽電池モジュールおよび太陽電池モジュールの製造方法
KR101792287B1 (ko) 2009-09-01 2017-10-31 사푸라스트 리써치 엘엘씨 집적된 박막 배터리를 갖는 인쇄 회로 보드
KR101295547B1 (ko) * 2009-10-07 2013-08-12 엘지전자 주식회사 박막 태양 전지 모듈 및 그 제조 방법
CN102596529B (zh) * 2009-10-15 2014-11-12 浜松光子学株式会社 Led光源装置
EP2372784B1 (de) * 2010-03-29 2015-10-07 Airbus DS GmbH Solarzelle, insbesondere eine Solarzelle mit mehreren Anschlüssen für Weltraumanwendungen
US20110300432A1 (en) 2010-06-07 2011-12-08 Snyder Shawn W Rechargeable, High-Density Electrochemical Device
US8592248B2 (en) 2010-11-17 2013-11-26 E I Du Pont De Nemours And Company Etching method for use with thin-film photovoltaic panel
US10601074B2 (en) 2011-06-29 2020-03-24 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US11527774B2 (en) 2011-06-29 2022-12-13 Space Charge, LLC Electrochemical energy storage devices
US11996517B2 (en) 2011-06-29 2024-05-28 Space Charge, LLC Electrochemical energy storage devices
US9853325B2 (en) 2011-06-29 2017-12-26 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
KR101305810B1 (ko) * 2011-10-25 2013-09-09 엘지이노텍 주식회사 태양전지 모듈
CN106960814A (zh) * 2016-01-08 2017-07-18 中华映管股份有限公司 像素结构的制造方法
CN110998866B (zh) 2017-08-10 2022-12-06 株式会社钟化 太阳能电池模块
CN107502865B (zh) * 2017-08-22 2019-04-23 苏州京浜光电科技股份有限公司 一种广角摄像模组用滤光片的制作方法
CN111742419A (zh) * 2017-12-11 2020-10-02 Ａｇｃ株式会社 光学层、光学层的制造方法、带光学层的太阳能电池组件、建筑用外壁材料及建筑
EP3762989A4 (de) 2018-03-07 2021-12-15 Space Charge, LLC Dünnfilm-festkörper-energiespeichervorrichtungen
US10490682B2 (en) 2018-03-14 2019-11-26 National Mechanical Group Corp. Frame-less encapsulated photo-voltaic solar panel supporting solar cell modules encapsulated within multiple layers of optically-transparent epoxy-resin materials
US11207988B2 (en) 2018-08-06 2021-12-28 Robert M. Lyden Electric or hybrid vehicle with wireless device and method of supplying electromagnetic energy to vehicle
US10840707B2 (en) 2018-08-06 2020-11-17 Robert M. Lyden Utility pole with solar modules and wireless device and method of retrofitting existing utility pole
US11588421B1 (en) 2019-08-15 2023-02-21 Robert M. Lyden Receiver device of energy from the earth and its atmosphere
KR102924293B1 (ko) * 2020-04-09 2026-02-06 삼성디스플레이 주식회사 표시 장치
CN113363303A (zh) * 2021-06-03 2021-09-07 湖南智信微电子科技有限公司 一种透明导电基板及其制备方法
DE102023206154A1 (de) * 2023-06-29 2025-01-02 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Baugruppe für eine elektrochemische Zellenvorrichtung

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137264A (ja) * 1982-02-09 1983-08-15 Fuji Electric Corp Res & Dev Ltd 光電変換装置
JPS59147469A (ja) * 1983-02-14 1984-08-23 Hitachi Ltd 非晶質シリコン太陽電池
US4663494A (en) * 1984-07-19 1987-05-05 Sanyo Electric Co., Ltd. Photovoltaic device
DE3727826A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Serienverschaltetes duennschicht-solarmodul aus kristallinem silizium
JPH05230651A (ja) * 1992-02-24 1993-09-07 Nikon Corp スパッタ成膜基板ホルダ−
JPH05263237A (ja) * 1992-03-19 1993-10-12 Dainippon Printing Co Ltd 透明電極膜の製造方法
KR100279591B1 (ko) * 1993-12-14 2001-02-01 구자홍 전계발광소자 제조방법
JPH1126787A (ja) 1997-07-08 1999-01-29 Kanegafuchi Chem Ind Co Ltd 薄膜太陽電池

Also Published As

Publication number Publication date
EP1039552A3 (de) 2003-08-13
AU768057B2 (en) 2003-11-27
EP1039552A2 (de) 2000-09-27
AU1844100A (en) 2000-08-31
EP1039552B1 (de) 2010-05-12
US6294722B1 (en) 2001-09-25
DE60044384D1 (de) 2010-06-24

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