ATE469952T1 - Polierlösungen - Google Patents

Polierlösungen

Info

Publication number
ATE469952T1
ATE469952T1 AT05818832T AT05818832T ATE469952T1 AT E469952 T1 ATE469952 T1 AT E469952T1 AT 05818832 T AT05818832 T AT 05818832T AT 05818832 T AT05818832 T AT 05818832T AT E469952 T1 ATE469952 T1 AT E469952T1
Authority
AT
Austria
Prior art keywords
carboxylic acid
polishing
acid
simple carboxylic
polishing solutions
Prior art date
Application number
AT05818832T
Other languages
English (en)
Inventor
Jeffrey S Kollodge
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Application granted granted Critical
Publication of ATE469952T1 publication Critical patent/ATE469952T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
AT05818832T 2004-12-10 2005-10-25 Polierlösungen ATE469952T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/009,608 US20060124026A1 (en) 2004-12-10 2004-12-10 Polishing solutions
PCT/US2005/038372 WO2006065347A2 (en) 2004-12-10 2005-10-25 Polishing solutions

Publications (1)

Publication Number Publication Date
ATE469952T1 true ATE469952T1 (de) 2010-06-15

Family

ID=36582316

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05818832T ATE469952T1 (de) 2004-12-10 2005-10-25 Polierlösungen

Country Status (9)

Country Link
US (1) US20060124026A1 (de)
EP (1) EP1833937B1 (de)
JP (1) JP5198870B2 (de)
KR (1) KR20070087647A (de)
CN (1) CN101076575B (de)
AT (1) ATE469952T1 (de)
DE (1) DE602005021699D1 (de)
TW (1) TWI473866B (de)
WO (1) WO2006065347A2 (de)

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US7591956B2 (en) * 2006-05-03 2009-09-22 OMG Electronic Chemicals, Inc. Method and composition for selectively stripping nickel from a substrate
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
US20090031636A1 (en) * 2007-08-03 2009-02-05 Qianqiu Ye Polymeric barrier removal polishing slurry
JP5135002B2 (ja) * 2008-02-28 2013-01-30 ルネサスエレクトロニクス株式会社 半導体装置
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
JP5516734B2 (ja) 2010-07-14 2014-06-11 日立化成株式会社 銅研磨用研磨液及びそれを用いた研磨方法
US9388330B2 (en) * 2012-12-17 2016-07-12 Fuji Engineering Co., Ltd. Bag containing blasting material
CN104745084B (zh) * 2013-12-25 2018-09-14 安集微电子（上海）有限公司 一种用于铝的化学机械抛光液及使用方法
US10253216B2 (en) 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
JP6720791B2 (ja) * 2016-09-13 2020-07-08 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
US10676647B1 (en) * 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
KR102714939B1 (ko) * 2019-06-06 2024-10-07 가부시끼가이샤 레조낙 연마액 및 연마 방법
EP4643371A1 (de) * 2022-12-29 2025-11-05 Basf Se Zusammensetzung zur selektiven entfernung von oxidverbindungen und ätzrückständen von co oder cu

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BE663291A (de) * 1964-05-04
US3754878A (en) * 1971-01-04 1973-08-28 Colgate Palmolive Co Abrasive cleaning compositions
US3756957A (en) * 1971-03-15 1973-09-04 Furukawa Electric Co Ltd Solutions for chemical dissolution treatment of metallic materials
JPS5435125B2 (de) * 1972-01-28 1979-10-31
SE425007B (sv) * 1976-01-05 1982-08-23 Shipley Co Stabil etslosning omfattande svavelsyra och veteperoxid samt anvendning av densamma
US4954142A (en) * 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5084071A (en) * 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US4987099A (en) * 1989-12-29 1991-01-22 North American Philips Corp. Method for selectively filling contacts or vias or various depths with CVD tungsten
US6546939B1 (en) * 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US5225034A (en) * 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
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US6068787A (en) * 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6194317B1 (en) * 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US6177026B1 (en) * 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
US6435947B2 (en) * 1998-05-26 2002-08-20 Cabot Microelectronics Corporation CMP polishing pad including a solid catalyst
US6206756B1 (en) * 1998-11-10 2001-03-27 Micron Technology, Inc. Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
WO2001023485A1 (en) * 1999-09-30 2001-04-05 Showa Denko K. K. Polishing composition and method
JP3606806B2 (ja) * 2000-05-12 2005-01-05 花王株式会社 研磨液組成物
JP2002134443A (ja) * 2000-10-19 2002-05-10 Ebara Corp 研磨方法及び研磨工具
US20020068454A1 (en) * 2000-12-01 2002-06-06 Applied Materials, Inc. Method and composition for the removal of residual materials during substrate planarization
US6800218B2 (en) * 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
JP2003170349A (ja) * 2001-09-27 2003-06-17 Fujimi Inc 磁気ディスク用基板の研磨用組成物及びそれを用いた研磨方法
JP3813865B2 (ja) * 2001-12-11 2006-08-23 株式会社荏原製作所 研磨方法及び研磨装置
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
US20040077295A1 (en) * 2002-08-05 2004-04-22 Hellring Stuart D. Process for reducing dishing and erosion during chemical mechanical planarization
JP4083528B2 (ja) * 2002-10-01 2008-04-30 株式会社フジミインコーポレーテッド 研磨用組成物
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
JP4249008B2 (ja) * 2003-12-25 2009-04-02 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
JP2006179845A (ja) * 2004-11-26 2006-07-06 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法

Also Published As

Publication number Publication date
CN101076575B (zh) 2014-11-26
CN101076575A (zh) 2007-11-21
JP5198870B2 (ja) 2013-05-15
EP1833937B1 (de) 2010-06-02
JP2008523616A (ja) 2008-07-03
WO2006065347A2 (en) 2006-06-22
DE602005021699D1 (de) 2010-07-15
TWI473866B (zh) 2015-02-21
KR20070087647A (ko) 2007-08-28
EP1833937A2 (de) 2007-09-19
WO2006065347A3 (en) 2007-02-01
TW200632060A (en) 2006-09-16
US20060124026A1 (en) 2006-06-15

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