ATE470236T1 - Poliermittel und polierverfahren - Google Patents

Poliermittel und polierverfahren

Info

Publication number
ATE470236T1
ATE470236T1 AT07020898T AT07020898T ATE470236T1 AT E470236 T1 ATE470236 T1 AT E470236T1 AT 07020898 T AT07020898 T AT 07020898T AT 07020898 T AT07020898 T AT 07020898T AT E470236 T1 ATE470236 T1 AT E470236T1
Authority
AT
Austria
Prior art keywords
compounds
skeleton
polishing
group
agents
Prior art date
Application number
AT07020898T
Other languages
English (en)
Inventor
Yasushi Kurata
Katsuyuki Masuda
Hiroshi Ono
Yasuo Kamigata
Kazuhiro Enomoto
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Application granted granted Critical
Publication of ATE470236T1 publication Critical patent/ATE470236T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Disintegrating Or Milling (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • ing And Chemical Polishing (AREA)
AT07020898T 2002-04-30 2003-04-28 Poliermittel und polierverfahren ATE470236T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002128644 2002-04-30
JP2002160159 2002-05-31

Publications (1)

Publication Number Publication Date
ATE470236T1 true ATE470236T1 (de) 2010-06-15

Family

ID=29405301

Family Applications (2)

Application Number Title Priority Date Filing Date
AT07020898T ATE470236T1 (de) 2002-04-30 2003-04-28 Poliermittel und polierverfahren
AT03719239T ATE403936T1 (de) 2002-04-30 2003-04-28 Polierfluid und polierverfahren

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT03719239T ATE403936T1 (de) 2002-04-30 2003-04-28 Polierfluid und polierverfahren

Country Status (10)

Country Link
US (3) US7367870B2 (de)
EP (2) EP1505639B1 (de)
JP (2) JP4449745B2 (de)
KR (1) KR100720985B1 (de)
CN (2) CN101037585B (de)
AT (2) ATE470236T1 (de)
AU (1) AU2003235964A1 (de)
DE (2) DE60322695D1 (de)
TW (1) TWI303660B (de)
WO (1) WO2003094216A1 (de)

Families Citing this family (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI259201B (en) * 2001-12-17 2006-08-01 Hitachi Chemical Co Ltd Slurry for metal polishing and method of polishing with the same
AU2003235964A1 (en) * 2002-04-30 2003-11-17 Hitachi Chemical Co., Ltd. Polishing fluid and polishing method
TWI282360B (en) * 2002-06-03 2007-06-11 Hitachi Chemical Co Ltd Polishing composition and polishing method thereof
TWI257126B (en) * 2002-07-25 2006-06-21 Hitachi Chemical Co Ltd Slurry and polishing method
JP4400562B2 (ja) * 2003-06-13 2010-01-20 日立化成工業株式会社 金属用研磨液及び研磨方法
JP2005169613A (ja) * 2003-11-20 2005-06-30 Toshiro Doi ワーク研磨装置およびワーク研磨方法
KR100596865B1 (ko) * 2004-01-05 2006-07-04 주식회사 하이닉스반도체 고평탄성 슬러리 조성물 및 이를 이용한 층간 절연막의cmp 방법
JP4316406B2 (ja) * 2004-03-22 2009-08-19 株式会社フジミインコーポレーテッド 研磨用組成物
EP1733421B1 (de) * 2004-03-30 2016-08-10 Basf Se Wässrige lösung und verwendung dieser lösung zur entfernung von post-etch residue von halbleitersubstraten
WO2005101474A1 (ja) * 2004-04-12 2005-10-27 Hitachi Chemical Co., Ltd. 金属用研磨液及びこれを用いた研磨方法
JP2005327782A (ja) * 2004-05-12 2005-11-24 Ministry Of National Defense Chung Shan Inst Of Science & Technology 半導体銅金属層用化学的機械的研磨スラリー
KR100637772B1 (ko) * 2004-06-25 2006-10-23 제일모직주식회사 반도체 sti 공정용 고선택비 cmp 슬러리 조성물
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP5026665B2 (ja) * 2004-10-15 2012-09-12 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP4585299B2 (ja) * 2004-12-09 2010-11-24 東京応化工業株式会社 リソグラフィー用リンス液及びそれを用いたレジストパターン形成方法
US20060163206A1 (en) * 2005-01-25 2006-07-27 Irina Belov Novel polishing slurries and abrasive-free solutions having a multifunctional activator
JP5110244B2 (ja) * 2005-03-09 2012-12-26 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
CN100482416C (zh) * 2005-03-15 2009-04-29 联华电子股份有限公司 化学机械研磨机台的研磨液供应设备与研磨液混合方法
KR100601740B1 (ko) * 2005-04-11 2006-07-18 테크노세미켐 주식회사 투명도전막 식각용액
JP2006339594A (ja) * 2005-06-06 2006-12-14 Seimi Chem Co Ltd 半導体用研磨剤
JP2007088424A (ja) * 2005-08-24 2007-04-05 Jsr Corp 化学機械研磨用水系分散体、該水系分散体を調製するためのキット、化学機械研磨方法、および半導体装置の製造方法
JP2007103515A (ja) * 2005-09-30 2007-04-19 Fujimi Inc 研磨方法
KR100668498B1 (ko) 2005-11-09 2007-01-12 주식회사 하이닉스반도체 반도체 메모리의 데이터 출력장치 및 방법
KR101260597B1 (ko) 2005-12-27 2013-05-06 히타치가세이가부시끼가이샤 금속용 연마액 및 피연마막의 연마 방법
US7897061B2 (en) * 2006-02-01 2011-03-01 Cabot Microelectronics Corporation Compositions and methods for CMP of phase change alloys
US20070184666A1 (en) * 2006-02-08 2007-08-09 Texas Instruments Inc. Method for removing residue containing an embedded metal
KR101333866B1 (ko) * 2006-02-14 2013-11-27 캐보트 마이크로일렉트로닉스 코포레이션 산화인듐주석 표면의 cmp를 위한 조성물 및 방법
CN1927779B (zh) * 2006-02-22 2010-05-12 上海东方久乐汽车安全气囊有限公司 一种用于汽车安全气囊气体发生器的产气药及其制造工艺
CN101410956B (zh) * 2006-04-03 2010-09-08 Jsr株式会社 化学机械研磨用水系分散体和化学机械研磨方法
CN100549121C (zh) * 2006-04-17 2009-10-14 长兴开发科技股份有限公司 化学机械研磨组合物
EP2020680A4 (de) * 2006-04-24 2011-09-21 Hitachi Chemical Co Ltd Polierflüssigkeit für cmp und polierverfahren
US8759216B2 (en) * 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
KR100818996B1 (ko) * 2006-06-19 2008-04-04 삼성전자주식회사 금속배선 연마용 슬러리
US7550092B2 (en) * 2006-06-19 2009-06-23 Epoch Material Co., Ltd. Chemical mechanical polishing composition
CN101484982A (zh) * 2006-07-04 2009-07-15 日立化成工业株式会社 Cmp用研磨液
CN101484276B (zh) 2006-07-05 2011-07-20 日立化成工业株式会社 Cmp用研磨液及研磨方法
US7538969B2 (en) * 2006-08-23 2009-05-26 Imation Corp. Servo pattern with encoded data
JP4952155B2 (ja) * 2006-09-12 2012-06-13 富士通株式会社 研磨条件予測プログラム、記録媒体、研磨条件予測装置および研磨条件予測方法
FR2910180A1 (fr) * 2006-12-15 2008-06-20 St Microelectronics Procede de fabrication d'un transistor cmos a grilles metalliques duales.
US8518296B2 (en) * 2007-02-14 2013-08-27 Micron Technology, Inc. Slurries and methods for polishing phase change materials
WO2008105342A1 (ja) * 2007-02-27 2008-09-04 Hitachi Chemical Co., Ltd. 金属用研磨液及び研磨方法
CN101280158A (zh) * 2007-04-06 2008-10-08 安集微电子(上海)有限公司 多晶硅化学机械抛光液
JP5327427B2 (ja) * 2007-06-19 2013-10-30 Jsr株式会社 化学機械研磨用水系分散体調製用セット、化学機械研磨用水系分散体の調製方法、化学機械研磨用水系分散体および化学機械研磨方法
JP5327050B2 (ja) * 2007-07-30 2013-10-30 日立化成株式会社 金属用研磨液及び研磨方法
US20100216309A1 (en) * 2007-10-23 2010-08-26 Hitachi Chemical Company, Ltd. Cmp polishing liquid and method for polishing substrate using the same
JP2009123880A (ja) 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
CN101497765A (zh) * 2008-01-30 2009-08-05 安集微电子(上海)有限公司 一种化学机械抛光液
WO2009119485A1 (ja) * 2008-03-28 2009-10-01 日立化成工業株式会社 金属用研磨液及びこの研磨液を用いた研磨方法
US8192250B2 (en) * 2008-05-22 2012-06-05 Textron Innovations Inc. Abrasive article
KR101316054B1 (ko) * 2008-08-08 2013-10-10 삼성전자주식회사 실리콘 산화막 식각용 조성물 및 이를 이용한 실리콘 산화막의 식각 방법
US8685272B2 (en) * 2008-08-08 2014-04-01 Samsung Electronics Co., Ltd. Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device
JP5361306B2 (ja) * 2008-09-19 2013-12-04 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法
CN101724347A (zh) * 2008-10-10 2010-06-09 安集微电子(上海)有限公司 一种化学机械抛光液
WO2010047314A1 (ja) 2008-10-20 2010-04-29 ニッタ・ハース株式会社 窒化ケイ素研磨用組成物およびこれを用いた選択比の制御方法
KR101084676B1 (ko) * 2008-12-03 2011-11-22 주식회사 엘지화학 1차 화학적 기계적 연마용 슬러리 조성물 및 화학적 기계적 연마 방법
US9548211B2 (en) 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
SG172829A1 (en) * 2009-02-16 2011-08-29 Hitachi Chemical Co Ltd Polishing agent for copper polishing and polishing method using same
WO2010092865A1 (ja) 2009-02-16 2010-08-19 日立化成工業株式会社 研磨剤及び研磨方法
JP2010219406A (ja) * 2009-03-18 2010-09-30 Tokyo Electron Ltd 化学的機械研磨方法
WO2011058952A1 (ja) * 2009-11-11 2011-05-19 株式会社クラレ 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法
TWI472601B (zh) * 2009-12-31 2015-02-11 第一毛織股份有限公司 化學機械拋光漿體組成物及使用該組成物之拋光方法
DE112012003180T5 (de) * 2011-09-01 2014-04-10 Shin-Etsu Handotai Co., Ltd. Verfahren zum Polieren von Silizium-Wafern und Poliermittel
CN102962731B (zh) * 2011-09-01 2015-03-25 沈阳远大铝业工程有限公司 不锈钢板材8k镜面加工方法
KR101366938B1 (ko) * 2012-01-06 2014-02-25 삼성전기주식회사 에칭액 및 이를 이용한 인쇄 배선 기판의 제조방법
US8778211B2 (en) 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
JP6268069B2 (ja) * 2014-09-12 2018-01-24 信越化学工業株式会社 研磨組成物及び研磨方法
KR101758437B1 (ko) * 2014-11-19 2017-07-17 삼성에스디아이 주식회사 유기막 cmp 슬러리 조성물 및 이를 이용한 연마방법
JP6233296B2 (ja) * 2014-12-26 2017-11-22 株式会社Sumco 砥粒の評価方法、および、シリコンウェーハの製造方法
WO2017163942A1 (ja) * 2016-03-25 2017-09-28 株式会社フジミインコーポレーテッド 金属を含む層を有する研磨対象物の研磨用組成物
US10325779B2 (en) * 2016-03-30 2019-06-18 Tokyo Electron Limited Colloidal silica growth inhibitor and associated method and system
US10515820B2 (en) 2016-03-30 2019-12-24 Tokyo Electron Limited Process and apparatus for processing a nitride structure without silica deposition
SG11202000380VA (en) * 2017-07-21 2020-02-27 Fujimi Inc Method of polishing substrate and polishing composition set
SG10201904669TA (en) * 2018-06-28 2020-01-30 Kctech Co Ltd Polishing Slurry Composition
US20200102476A1 (en) * 2018-09-28 2020-04-02 Versum Materials Us, Llc Barrier Slurry Removal Rate Improvement
CN109632436A (zh) * 2018-12-14 2019-04-16 河钢股份有限公司 一种高氮不锈钢的ebsd测试试样表面处理方法
CN113454267A (zh) * 2019-01-31 2021-09-28 富士胶片电子材料美国有限公司 蚀刻组合物
KR102258900B1 (ko) * 2019-04-22 2021-06-02 주식회사 케이씨텍 금속막 연마용 슬러리 조성물
WO2020231723A1 (en) * 2019-05-13 2020-11-19 Ecolab Usa Inc. 1,2,4-triazolo[1,5-a] pyrimidine derivative as copper corrosion inhibitor
CN114258424B (zh) * 2019-06-13 2023-07-04 富士胶片电子材料美国有限公司 蚀刻组合物
CN114080437B (zh) * 2019-08-09 2023-10-27 巴斯夫欧洲公司 用于抑制钨蚀刻的组合物和方法
JP7339811B2 (ja) * 2019-08-27 2023-09-06 株式会社荏原製作所 リテーナリングに局所荷重を伝達するローラーの異常検出方法および研磨装置
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KR102422148B1 (ko) * 2020-06-12 2022-07-15 성균관대학교산학협력단 연마 조성물의 제조 방법
CN112725803B (zh) * 2020-12-22 2022-11-15 江苏奥首材料科技有限公司 一种晶圆级封装用钛蚀刻液
CN112920716A (zh) * 2021-01-26 2021-06-08 中国科学院上海微系统与信息技术研究所 一种用于氮化钛化学机械抛光的组合物及其使用方法
KR102944508B1 (ko) * 2023-01-06 2026-03-25 삼성전자주식회사 기판 처리 장치 및 그 동작 방법

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223988B1 (de) * 1971-07-29 1977-06-28
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
DE3800834A1 (de) * 1988-01-14 1989-07-27 Henkel Kgaa Verfahren und mittel zum gleichzeitigen gleitschleifen, reinigen und passivieren metallischer werkstuecke
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5114437A (en) * 1990-08-28 1992-05-19 Sumitomo Chemical Co., Ltd. Polishing composition for metallic material
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5575885A (en) * 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
CA2200747A1 (en) * 1994-09-23 1996-03-28 Alfredo Vinci Aqueous metal cleaner
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
US5962378A (en) * 1997-02-11 1999-10-05 Exxon Chemical Patents Inc. Synergistic combinations for use in functional fluid compositions
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
JP3810588B2 (ja) * 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
AU5445899A (en) * 1998-08-31 2000-03-21 Hitachi Chemical Company, Ltd. Abrasive liquid for metal and method for polishing
WO2000039844A1 (fr) * 1998-12-28 2000-07-06 Hitachi Chemical Company, Ltd. Materiaux pour liquide de polissage de metal, liquide de polissage de metal, procede de preparation et procede de polissage connexes
US6074992A (en) * 1999-02-02 2000-06-13 Union Carbide Chemicals & Plastics Technology Corporation Functional fluid compositions
JP4164941B2 (ja) 1999-05-27 2008-10-15 日立化成工業株式会社 金属用研磨液及び研磨方法
JP2000340532A (ja) 1999-05-31 2000-12-08 Mitsubishi Materials Corp 研磨用スラリー及びこれを用いた研磨方法
US6630433B2 (en) * 1999-07-19 2003-10-07 Honeywell International Inc. Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
US6443812B1 (en) * 1999-08-24 2002-09-03 Rodel Holdings Inc. Compositions for insulator and metal CMP and methods relating thereto
KR20020027571A (ko) 1999-08-24 2002-04-13 갤반 마틴 절연체와 금속의 cmp용 조성물 및 이에 관련된 방법
JP2001068437A (ja) * 1999-08-26 2001-03-16 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
JP3780767B2 (ja) * 1999-09-09 2006-05-31 日立化成工業株式会社 金属用研磨液及び基板の研磨方法
JP4759779B2 (ja) 1999-09-09 2011-08-31 日立化成工業株式会社 基板の研磨方法
US6258140B1 (en) * 1999-09-27 2001-07-10 Fujimi America Inc. Polishing composition
JP2001127027A (ja) 1999-10-27 2001-05-11 Hitachi Chem Co Ltd 金属研磨方法
JP2001127017A (ja) 1999-10-27 2001-05-11 Hitachi Chem Co Ltd 金属研磨方法
JP2001127019A (ja) * 1999-10-29 2001-05-11 Hitachi Chem Co Ltd 金属用研磨液及びそれを用いた基板の研磨方法
US6503418B2 (en) * 1999-11-04 2003-01-07 Advanced Micro Devices, Inc. Ta barrier slurry containing an organic additive
US6368955B1 (en) * 1999-11-22 2002-04-09 Lucent Technologies, Inc. Method of polishing semiconductor structures using a two-step chemical mechanical planarization with slurry particles having different particle bulk densities
AU4309601A (en) * 1999-12-07 2001-06-18 Cabot Microelectronics Corporation Chemical-mechanical polishing method
JP3805588B2 (ja) 1999-12-27 2006-08-02 株式会社日立製作所 半導体装置の製造方法
US6355075B1 (en) 2000-02-11 2002-03-12 Fujimi Incorporated Polishing composition
US6451697B1 (en) * 2000-04-06 2002-09-17 Applied Materials, Inc. Method for abrasive-free metal CMP in passivation domain
JP2002050595A (ja) 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
US20020062600A1 (en) * 2000-08-11 2002-05-30 Mandigo Glenn C. Polishing composition
US6605537B2 (en) * 2000-10-27 2003-08-12 Rodel Holdings, Inc. Polishing of metal substrates
WO2002024413A2 (en) * 2000-09-20 2002-03-28 Rodel Holdings, Inc. Polishing by cmp for optimized planarization
US6936541B2 (en) * 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
JP4951808B2 (ja) 2000-10-26 2012-06-13 日立化成工業株式会社 金属用研磨液及び研磨方法
US6836592B2 (en) * 2000-11-20 2004-12-28 Aculight Corporation Method and apparatus for fiber Bragg grating production
KR100396883B1 (ko) * 2000-11-23 2003-09-02 삼성전자주식회사 화학기계적 연마용 슬러리 및 이를 이용한 구리 금속배선제조방법
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
KR100464429B1 (ko) * 2002-08-16 2005-01-03 삼성전자주식회사 화학 기계적 폴리싱 슬러리 및 이를 사용한 화학 기계적폴리싱 방법
JP2003100672A (ja) 2001-09-21 2003-04-04 Rodel Nitta Co 研磨用スラリー
JP2003151926A (ja) 2001-11-12 2003-05-23 Sumitomo Bakelite Co Ltd 研磨用組成物(
JP2004006628A (ja) 2002-03-27 2004-01-08 Hitachi Ltd 半導体装置の製造方法
AU2003235964A1 (en) * 2002-04-30 2003-11-17 Hitachi Chemical Co., Ltd. Polishing fluid and polishing method
TWI282360B (en) * 2002-06-03 2007-06-11 Hitachi Chemical Co Ltd Polishing composition and polishing method thereof

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US7367870B2 (en) 2008-05-06
DE60332881D1 (de) 2010-07-15
WO2003094216A1 (en) 2003-11-13
EP1505639A4 (de) 2007-05-09
ATE403936T1 (de) 2008-08-15
CN101037585A (zh) 2007-09-19
CN101037585B (zh) 2010-05-26
EP1505639B1 (de) 2008-08-06
US8696929B2 (en) 2014-04-15
CN100336179C (zh) 2007-09-05
TW200307032A (en) 2003-12-01
EP1881524A1 (de) 2008-01-23
KR100720985B1 (ko) 2007-05-22
US20050181609A1 (en) 2005-08-18
US20080003924A1 (en) 2008-01-03
AU2003235964A1 (en) 2003-11-17
EP1881524B1 (de) 2010-06-02
JP4449745B2 (ja) 2010-04-14
EP1505639A1 (de) 2005-02-09
JP4853494B2 (ja) 2012-01-11
JP2008263215A (ja) 2008-10-30
CN1650403A (zh) 2005-08-03
KR20050006203A (ko) 2005-01-15
US20070295934A1 (en) 2007-12-27
DE60322695D1 (de) 2008-09-18
TWI303660B (en) 2008-12-01
JPWO2003094216A1 (ja) 2005-09-08

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