ATE470236T1 - Poliermittel und polierverfahren - Google Patents
Poliermittel und polierverfahrenInfo
- Publication number
- ATE470236T1 ATE470236T1 AT07020898T AT07020898T ATE470236T1 AT E470236 T1 ATE470236 T1 AT E470236T1 AT 07020898 T AT07020898 T AT 07020898T AT 07020898 T AT07020898 T AT 07020898T AT E470236 T1 ATE470236 T1 AT E470236T1
- Authority
- AT
- Austria
- Prior art keywords
- compounds
- skeleton
- polishing
- group
- agents
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- ing And Chemical Polishing (AREA)
- Disintegrating Or Milling (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002128644 | 2002-04-30 | ||
| JP2002160159 | 2002-05-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE470236T1 true ATE470236T1 (de) | 2010-06-15 |
Family
ID=29405301
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03719239T ATE403936T1 (de) | 2002-04-30 | 2003-04-28 | Polierfluid und polierverfahren |
| AT07020898T ATE470236T1 (de) | 2002-04-30 | 2003-04-28 | Poliermittel und polierverfahren |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03719239T ATE403936T1 (de) | 2002-04-30 | 2003-04-28 | Polierfluid und polierverfahren |
Country Status (10)
| Country | Link |
|---|---|
| US (3) | US7367870B2 (de) |
| EP (2) | EP1881524B1 (de) |
| JP (2) | JP4449745B2 (de) |
| KR (1) | KR100720985B1 (de) |
| CN (2) | CN100336179C (de) |
| AT (2) | ATE403936T1 (de) |
| AU (1) | AU2003235964A1 (de) |
| DE (2) | DE60322695D1 (de) |
| TW (1) | TWI303660B (de) |
| WO (1) | WO2003094216A1 (de) |
Families Citing this family (86)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI259201B (en) * | 2001-12-17 | 2006-08-01 | Hitachi Chemical Co Ltd | Slurry for metal polishing and method of polishing with the same |
| DE60322695D1 (de) * | 2002-04-30 | 2008-09-18 | Hitachi Chemical Co Ltd | Polierfluid und polierverfahren |
| TWI282360B (en) * | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
| TWI257126B (en) * | 2002-07-25 | 2006-06-21 | Hitachi Chemical Co Ltd | Slurry and polishing method |
| AU2003242397A1 (en) * | 2003-06-13 | 2005-01-04 | Hitachi Chemical Co., Ltd. | Polishing fluid for metal and polishing method |
| JP2005169613A (ja) * | 2003-11-20 | 2005-06-30 | Toshiro Doi | ワーク研磨装置およびワーク研磨方法 |
| KR100596865B1 (ko) * | 2004-01-05 | 2006-07-04 | 주식회사 하이닉스반도체 | 고평탄성 슬러리 조성물 및 이를 이용한 층간 절연막의cmp 방법 |
| JP4316406B2 (ja) * | 2004-03-22 | 2009-08-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP2007531992A (ja) * | 2004-03-30 | 2007-11-08 | ビーエーエスエフ アクチェンゲゼルシャフト | エッチング残渣を除去するための水溶液 |
| US20070196975A1 (en) * | 2004-04-12 | 2007-08-23 | Hitachi Chemical Co., Ltd. | Metal-Polishing Liquid And Polishing Method Using The Same |
| JP2005327782A (ja) * | 2004-05-12 | 2005-11-24 | Ministry Of National Defense Chung Shan Inst Of Science & Technology | 半導体銅金属層用化学的機械的研磨スラリー |
| KR100637772B1 (ko) * | 2004-06-25 | 2006-10-23 | 제일모직주식회사 | 반도체 sti 공정용 고선택비 cmp 슬러리 조성물 |
| JP4814502B2 (ja) * | 2004-09-09 | 2011-11-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| JP5026665B2 (ja) | 2004-10-15 | 2012-09-12 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| JP4585299B2 (ja) * | 2004-12-09 | 2010-11-24 | 東京応化工業株式会社 | リソグラフィー用リンス液及びそれを用いたレジストパターン形成方法 |
| US20060163206A1 (en) * | 2005-01-25 | 2006-07-27 | Irina Belov | Novel polishing slurries and abrasive-free solutions having a multifunctional activator |
| JP5110244B2 (ja) * | 2005-03-09 | 2012-12-26 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
| CN100482416C (zh) * | 2005-03-15 | 2009-04-29 | 联华电子股份有限公司 | 化学机械研磨机台的研磨液供应设备与研磨液混合方法 |
| KR100601740B1 (ko) * | 2005-04-11 | 2006-07-18 | 테크노세미켐 주식회사 | 투명도전막 식각용액 |
| JP2006339594A (ja) * | 2005-06-06 | 2006-12-14 | Seimi Chem Co Ltd | 半導体用研磨剤 |
| JP2007088424A (ja) * | 2005-08-24 | 2007-04-05 | Jsr Corp | 化学機械研磨用水系分散体、該水系分散体を調製するためのキット、化学機械研磨方法、および半導体装置の製造方法 |
| JP2007103515A (ja) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨方法 |
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| US7897061B2 (en) * | 2006-02-01 | 2011-03-01 | Cabot Microelectronics Corporation | Compositions and methods for CMP of phase change alloys |
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| TWI341325B (en) * | 2006-02-14 | 2011-05-01 | Cabot Microelectronics Corp | Compositions and methods for cmp of indium tin oxide surfaces |
| CN1927779B (zh) * | 2006-02-22 | 2010-05-12 | 上海东方久乐汽车安全气囊有限公司 | 一种用于汽车安全气囊气体发生器的产气药及其制造工艺 |
| KR101406642B1 (ko) * | 2006-04-03 | 2014-06-11 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법, 및화학 기계 연마용 수계 분산체를 제조하기 위한 키트 |
| CN100549121C (zh) * | 2006-04-17 | 2009-10-14 | 长兴开发科技股份有限公司 | 化学机械研磨组合物 |
| EP2020680A4 (de) * | 2006-04-24 | 2011-09-21 | Hitachi Chemical Co Ltd | Polierflüssigkeit für cmp und polierverfahren |
| US8759216B2 (en) * | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
| US7550092B2 (en) * | 2006-06-19 | 2009-06-23 | Epoch Material Co., Ltd. | Chemical mechanical polishing composition |
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| JP5012800B2 (ja) | 2006-07-05 | 2012-08-29 | 日立化成工業株式会社 | Cmp用研磨液及び研磨方法 |
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| US8518296B2 (en) * | 2007-02-14 | 2013-08-27 | Micron Technology, Inc. | Slurries and methods for polishing phase change materials |
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| CA2724407C (en) * | 2008-05-22 | 2013-07-16 | Bell Helicopter Textron, Inc. | Abrasive article |
| US8685272B2 (en) * | 2008-08-08 | 2014-04-01 | Samsung Electronics Co., Ltd. | Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device |
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| EP2343732B1 (de) | 2008-10-20 | 2018-10-10 | Nitta Haas Incorporated | Zusammensetzung zum polieren von siliziumnitrid |
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| US9548211B2 (en) * | 2008-12-04 | 2017-01-17 | Cabot Microelectronics Corporation | Method to selectively polish silicon carbide films |
| US8889555B2 (en) * | 2009-02-16 | 2014-11-18 | Hitachi Chemical Co., Ltd. | Polishing agent for copper polishing and polishing method using same |
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| US8778211B2 (en) | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
| JP6268069B2 (ja) * | 2014-09-12 | 2018-01-24 | 信越化学工業株式会社 | 研磨組成物及び研磨方法 |
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| US20190085207A1 (en) * | 2016-03-25 | 2019-03-21 | Fujimi Incorporated | Polishing composition for object to be polished having metal-containing layer |
| US10515820B2 (en) | 2016-03-30 | 2019-12-24 | Tokyo Electron Limited | Process and apparatus for processing a nitride structure without silica deposition |
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| KR102944508B1 (ko) * | 2023-01-06 | 2026-03-25 | 삼성전자주식회사 | 기판 처리 장치 및 그 동작 방법 |
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-
2003
- 2003-04-28 DE DE60322695T patent/DE60322695D1/de not_active Expired - Lifetime
- 2003-04-28 AT AT03719239T patent/ATE403936T1/de not_active IP Right Cessation
- 2003-04-28 KR KR1020047017363A patent/KR100720985B1/ko not_active Expired - Lifetime
- 2003-04-28 DE DE60332881T patent/DE60332881D1/de not_active Expired - Lifetime
- 2003-04-28 AT AT07020898T patent/ATE470236T1/de not_active IP Right Cessation
- 2003-04-28 US US10/513,002 patent/US7367870B2/en not_active Expired - Lifetime
- 2003-04-28 EP EP07020898A patent/EP1881524B1/de not_active Expired - Lifetime
- 2003-04-28 JP JP2004502340A patent/JP4449745B2/ja not_active Expired - Fee Related
- 2003-04-28 CN CNB038095904A patent/CN100336179C/zh not_active Expired - Fee Related
- 2003-04-28 WO PCT/JP2003/005465 patent/WO2003094216A1/ja not_active Ceased
- 2003-04-28 AU AU2003235964A patent/AU2003235964A1/en not_active Abandoned
- 2003-04-28 CN CN2007100958203A patent/CN101037585B/zh not_active Expired - Fee Related
- 2003-04-28 EP EP03719239A patent/EP1505639B1/de not_active Expired - Lifetime
- 2003-04-29 TW TW092109964A patent/TWI303660B/zh not_active IP Right Cessation
-
2007
- 2007-06-06 US US11/808,038 patent/US20070295934A1/en not_active Abandoned
- 2007-06-06 US US11/808,047 patent/US8696929B2/en not_active Expired - Lifetime
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2008
- 2008-05-30 JP JP2008143402A patent/JP4853494B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN101037585B (zh) | 2010-05-26 |
| TWI303660B (en) | 2008-12-01 |
| US8696929B2 (en) | 2014-04-15 |
| CN101037585A (zh) | 2007-09-19 |
| AU2003235964A1 (en) | 2003-11-17 |
| CN100336179C (zh) | 2007-09-05 |
| CN1650403A (zh) | 2005-08-03 |
| JPWO2003094216A1 (ja) | 2005-09-08 |
| EP1505639B1 (de) | 2008-08-06 |
| US7367870B2 (en) | 2008-05-06 |
| KR20050006203A (ko) | 2005-01-15 |
| US20080003924A1 (en) | 2008-01-03 |
| JP4449745B2 (ja) | 2010-04-14 |
| EP1881524A1 (de) | 2008-01-23 |
| EP1881524B1 (de) | 2010-06-02 |
| DE60322695D1 (de) | 2008-09-18 |
| JP2008263215A (ja) | 2008-10-30 |
| EP1505639A1 (de) | 2005-02-09 |
| US20070295934A1 (en) | 2007-12-27 |
| KR100720985B1 (ko) | 2007-05-22 |
| DE60332881D1 (de) | 2010-07-15 |
| US20050181609A1 (en) | 2005-08-18 |
| JP4853494B2 (ja) | 2012-01-11 |
| TW200307032A (en) | 2003-12-01 |
| EP1505639A4 (de) | 2007-05-09 |
| ATE403936T1 (de) | 2008-08-15 |
| WO2003094216A1 (en) | 2003-11-13 |
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