ATE470236T1 - Poliermittel und polierverfahren - Google Patents
Poliermittel und polierverfahrenInfo
- Publication number
- ATE470236T1 ATE470236T1 AT07020898T AT07020898T ATE470236T1 AT E470236 T1 ATE470236 T1 AT E470236T1 AT 07020898 T AT07020898 T AT 07020898T AT 07020898 T AT07020898 T AT 07020898T AT E470236 T1 ATE470236 T1 AT E470236T1
- Authority
- AT
- Austria
- Prior art keywords
- compounds
- skeleton
- polishing
- group
- agents
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Disintegrating Or Milling (AREA)
- ing And Chemical Polishing (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002128644 | 2002-04-30 | ||
| JP2002160159 | 2002-05-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE470236T1 true ATE470236T1 (de) | 2010-06-15 |
Family
ID=29405301
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07020898T ATE470236T1 (de) | 2002-04-30 | 2003-04-28 | Poliermittel und polierverfahren |
| AT03719239T ATE403936T1 (de) | 2002-04-30 | 2003-04-28 | Polierfluid und polierverfahren |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03719239T ATE403936T1 (de) | 2002-04-30 | 2003-04-28 | Polierfluid und polierverfahren |
Country Status (10)
| Country | Link |
|---|---|
| US (3) | US7367870B2 (de) |
| EP (2) | EP1881524B1 (de) |
| JP (2) | JP4449745B2 (de) |
| KR (1) | KR100720985B1 (de) |
| CN (2) | CN100336179C (de) |
| AT (2) | ATE470236T1 (de) |
| AU (1) | AU2003235964A1 (de) |
| DE (2) | DE60332881D1 (de) |
| TW (1) | TWI303660B (de) |
| WO (1) | WO2003094216A1 (de) |
Families Citing this family (86)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI259201B (en) * | 2001-12-17 | 2006-08-01 | Hitachi Chemical Co Ltd | Slurry for metal polishing and method of polishing with the same |
| WO2004111157A1 (ja) * | 2003-06-13 | 2004-12-23 | Hitachi Chemical Co., Ltd. | 金属用研磨液及び研磨方法 |
| DE60332881D1 (de) * | 2002-04-30 | 2010-07-15 | Hitachi Chemical Co Ltd | Poliermittel und Polierverfahren |
| TWI282360B (en) * | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
| TWI257126B (en) * | 2002-07-25 | 2006-06-21 | Hitachi Chemical Co Ltd | Slurry and polishing method |
| JP2005169613A (ja) * | 2003-11-20 | 2005-06-30 | Toshiro Doi | ワーク研磨装置およびワーク研磨方法 |
| KR100596865B1 (ko) * | 2004-01-05 | 2006-07-04 | 주식회사 하이닉스반도체 | 고평탄성 슬러리 조성물 및 이를 이용한 층간 절연막의cmp 방법 |
| JP4316406B2 (ja) * | 2004-03-22 | 2009-08-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US7919445B2 (en) * | 2004-03-30 | 2011-04-05 | Basf Aktiengesellschaft | Aqueous solution for removing post-etch residue |
| WO2005101474A1 (ja) * | 2004-04-12 | 2005-10-27 | Hitachi Chemical Co., Ltd. | 金属用研磨液及びこれを用いた研磨方法 |
| JP2005327782A (ja) * | 2004-05-12 | 2005-11-24 | Ministry Of National Defense Chung Shan Inst Of Science & Technology | 半導体銅金属層用化学的機械的研磨スラリー |
| KR100637772B1 (ko) * | 2004-06-25 | 2006-10-23 | 제일모직주식회사 | 반도체 sti 공정용 고선택비 cmp 슬러리 조성물 |
| JP4814502B2 (ja) * | 2004-09-09 | 2011-11-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| JP5026665B2 (ja) | 2004-10-15 | 2012-09-12 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| JP4585299B2 (ja) * | 2004-12-09 | 2010-11-24 | 東京応化工業株式会社 | リソグラフィー用リンス液及びそれを用いたレジストパターン形成方法 |
| US20060163206A1 (en) * | 2005-01-25 | 2006-07-27 | Irina Belov | Novel polishing slurries and abrasive-free solutions having a multifunctional activator |
| JP5110244B2 (ja) * | 2005-03-09 | 2012-12-26 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
| CN100482416C (zh) * | 2005-03-15 | 2009-04-29 | 联华电子股份有限公司 | 化学机械研磨机台的研磨液供应设备与研磨液混合方法 |
| KR100601740B1 (ko) * | 2005-04-11 | 2006-07-18 | 테크노세미켐 주식회사 | 투명도전막 식각용액 |
| JP2006339594A (ja) * | 2005-06-06 | 2006-12-14 | Seimi Chem Co Ltd | 半導体用研磨剤 |
| JP2007088424A (ja) * | 2005-08-24 | 2007-04-05 | Jsr Corp | 化学機械研磨用水系分散体、該水系分散体を調製するためのキット、化学機械研磨方法、および半導体装置の製造方法 |
| JP2007103515A (ja) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨方法 |
| KR100668498B1 (ko) | 2005-11-09 | 2007-01-12 | 주식회사 하이닉스반도체 | 반도체 메모리의 데이터 출력장치 및 방법 |
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| CN1927779B (zh) * | 2006-02-22 | 2010-05-12 | 上海东方久乐汽车安全气囊有限公司 | 一种用于汽车安全气囊气体发生器的产气药及其制造工艺 |
| EP2006891A4 (de) * | 2006-04-03 | 2011-02-23 | Jsr Corp | Wässrige dispersion zum chemisch-mechanischen polieren, verfahren zum chemisch-mechanischen polieren und kit zum herstellen einer wässrigen dispersion zum chemisch-mechanischen polieren |
| CN100549121C (zh) * | 2006-04-17 | 2009-10-14 | 长兴开发科技股份有限公司 | 化学机械研磨组合物 |
| JPWO2007123235A1 (ja) * | 2006-04-24 | 2009-09-10 | 日立化成工業株式会社 | Cmp用研磨液及び研磨方法 |
| US8759216B2 (en) * | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
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-
2003
- 2003-04-28 DE DE60332881T patent/DE60332881D1/de not_active Expired - Lifetime
- 2003-04-28 US US10/513,002 patent/US7367870B2/en not_active Expired - Lifetime
- 2003-04-28 CN CNB038095904A patent/CN100336179C/zh not_active Expired - Fee Related
- 2003-04-28 EP EP07020898A patent/EP1881524B1/de not_active Expired - Lifetime
- 2003-04-28 KR KR1020047017363A patent/KR100720985B1/ko not_active Expired - Lifetime
- 2003-04-28 JP JP2004502340A patent/JP4449745B2/ja not_active Expired - Fee Related
- 2003-04-28 DE DE60322695T patent/DE60322695D1/de not_active Expired - Lifetime
- 2003-04-28 AT AT07020898T patent/ATE470236T1/de not_active IP Right Cessation
- 2003-04-28 CN CN2007100958203A patent/CN101037585B/zh not_active Expired - Fee Related
- 2003-04-28 AU AU2003235964A patent/AU2003235964A1/en not_active Abandoned
- 2003-04-28 AT AT03719239T patent/ATE403936T1/de not_active IP Right Cessation
- 2003-04-28 WO PCT/JP2003/005465 patent/WO2003094216A1/ja not_active Ceased
- 2003-04-28 EP EP03719239A patent/EP1505639B1/de not_active Expired - Lifetime
- 2003-04-29 TW TW092109964A patent/TWI303660B/zh not_active IP Right Cessation
-
2007
- 2007-06-06 US US11/808,047 patent/US8696929B2/en not_active Expired - Lifetime
- 2007-06-06 US US11/808,038 patent/US20070295934A1/en not_active Abandoned
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2008
- 2008-05-30 JP JP2008143402A patent/JP4853494B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TWI303660B (en) | 2008-12-01 |
| ATE403936T1 (de) | 2008-08-15 |
| US7367870B2 (en) | 2008-05-06 |
| EP1505639A1 (de) | 2005-02-09 |
| JPWO2003094216A1 (ja) | 2005-09-08 |
| CN100336179C (zh) | 2007-09-05 |
| EP1505639B1 (de) | 2008-08-06 |
| EP1881524A1 (de) | 2008-01-23 |
| US20070295934A1 (en) | 2007-12-27 |
| JP2008263215A (ja) | 2008-10-30 |
| AU2003235964A1 (en) | 2003-11-17 |
| KR20050006203A (ko) | 2005-01-15 |
| CN101037585A (zh) | 2007-09-19 |
| US20050181609A1 (en) | 2005-08-18 |
| JP4853494B2 (ja) | 2012-01-11 |
| WO2003094216A1 (en) | 2003-11-13 |
| KR100720985B1 (ko) | 2007-05-22 |
| EP1505639A4 (de) | 2007-05-09 |
| DE60322695D1 (de) | 2008-09-18 |
| DE60332881D1 (de) | 2010-07-15 |
| US8696929B2 (en) | 2014-04-15 |
| US20080003924A1 (en) | 2008-01-03 |
| TW200307032A (en) | 2003-12-01 |
| EP1881524B1 (de) | 2010-06-02 |
| CN101037585B (zh) | 2010-05-26 |
| JP4449745B2 (ja) | 2010-04-14 |
| CN1650403A (zh) | 2005-08-03 |
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