|
US7582127B2
(en)
*
|
2004-06-16 |
2009-09-01 |
Cabot Microelectronics Corporation |
Polishing composition for a tungsten-containing substrate
|
|
US7709053B2
(en)
*
|
2004-07-29 |
2010-05-04 |
Rohm And Haas Electronic Materials Cmp Holdings, Inc. |
Method of manufacturing of polymer-coated particles for chemical mechanical polishing
|
|
US7531105B2
(en)
*
|
2004-11-05 |
2009-05-12 |
Cabot Microelectronics Corporation |
Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
|
|
US20060096179A1
(en)
*
|
2004-11-05 |
2006-05-11 |
Cabot Microelectronics Corporation |
CMP composition containing surface-modified abrasive particles
|
|
US7504044B2
(en)
*
|
2004-11-05 |
2009-03-17 |
Cabot Microelectronics Corporation |
Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
|
|
US7265055B2
(en)
|
2005-10-26 |
2007-09-04 |
Cabot Microelectronics Corporation |
CMP of copper/ruthenium substrates
|
|
US20080148649A1
(en)
*
|
2006-12-21 |
2008-06-26 |
Zhendong Liu |
Ruthenium-barrier polishing slurry
|
|
US7691287B2
(en)
*
|
2007-01-31 |
2010-04-06 |
Dupont Air Products Nanomaterials Llc |
Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization
|
|
WO2008117573A1
(ja)
*
|
2007-03-27 |
2008-10-02 |
Jsr Corporation |
化学機械研磨用水系分散体、該水系分散体を調製するためのキット、化学機械研磨方法、および半導体装置の製造方法
|
|
JP2008288398A
(ja)
*
|
2007-05-18 |
2008-11-27 |
Nippon Chem Ind Co Ltd |
半導体ウェハーの研磨用組成物、その製造方法、及び研磨加工方法
|
|
JP5327427B2
(ja)
*
|
2007-06-19 |
2013-10-30 |
Jsr株式会社 |
化学機械研磨用水系分散体調製用セット、化学機械研磨用水系分散体の調製方法、化学機械研磨用水系分散体および化学機械研磨方法
|
|
US9028572B2
(en)
*
|
2007-09-21 |
2015-05-12 |
Cabot Microelectronics Corporation |
Polishing composition and method utilizing abrasive particles treated with an aminosilane
|
|
US7994057B2
(en)
*
|
2007-09-21 |
2011-08-09 |
Cabot Microelectronics Corporation |
Polishing composition and method utilizing abrasive particles treated with an aminosilane
|
|
US20090090696A1
(en)
*
|
2007-10-08 |
2009-04-09 |
Cabot Microelectronics Corporation |
Slurries for polishing oxide and nitride with high removal rates
|
|
DE102007062572A1
(de)
*
|
2007-12-22 |
2009-06-25 |
Evonik Degussa Gmbh |
Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion
|
|
KR101256551B1
(ko)
*
|
2008-03-06 |
2013-04-19 |
주식회사 엘지화학 |
Cmp 슬러리 및 이를 이용한 연마 방법
|
|
US7959695B2
(en)
*
|
2008-03-21 |
2011-06-14 |
Saint-Gobain Ceramics & Plastics, Inc. |
Fixed abrasive articles utilizing coated abrasive particles
|
|
US9382450B2
(en)
|
2009-01-20 |
2016-07-05 |
Cabot Corporation |
Compositions comprising silane modified metal oxides
|
|
WO2010129032A1
(en)
|
2009-05-06 |
2010-11-11 |
Inmat Inc. |
Barrier coatings post-treated with multi-valent metal cations
|
|
US7947125B1
(en)
*
|
2009-10-30 |
2011-05-24 |
Canon Kabushiki Kaisha |
Fine particle dispersion liquid containing tantalum oxide fine particles, tantalum oxide fine particle-resin composite, and method of producing fine particle dispersion liquid
|
|
CN102101976A
(zh)
*
|
2009-12-18 |
2011-06-22 |
安集微电子(上海)有限公司 |
一种化学机械抛光液
|
|
KR20120134105A
(ko)
*
|
2010-02-01 |
2012-12-11 |
제이에스알 가부시끼가이샤 |
화학 기계 연마용 수계 분산체 및 이를 이용한 화학 기계 연마 방법
|
|
US8639020B1
(en)
|
2010-06-16 |
2014-01-28 |
Intel Corporation |
Method and system for modeling subjects from a depth map
|
|
JP5695367B2
(ja)
*
|
2010-08-23 |
2015-04-01 |
株式会社フジミインコーポレーテッド |
研磨用組成物及びそれを用いた研磨方法
|
|
JP5940270B2
(ja)
*
|
2010-12-09 |
2016-06-29 |
花王株式会社 |
研磨液組成物
|
|
TWI547552B
(zh)
*
|
2012-03-19 |
2016-09-01 |
福吉米股份有限公司 |
硏光加工用硏磨材及使用此之基板的製造方法
|
|
JP5957292B2
(ja)
*
|
2012-05-18 |
2016-07-27 |
株式会社フジミインコーポレーテッド |
研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
|
|
US8778212B2
(en)
|
2012-05-22 |
2014-07-15 |
Cabot Microelectronics Corporation |
CMP composition containing zirconia particles and method of use
|
|
WO2014034358A1
(ja)
*
|
2012-08-30 |
2014-03-06 |
日立化成株式会社 |
研磨剤、研磨剤セット及び基体の研磨方法
|
|
JP6054149B2
(ja)
|
2012-11-15 |
2016-12-27 |
株式会社フジミインコーポレーテッド |
研磨用組成物
|
|
JP6050839B2
(ja)
*
|
2013-02-01 |
2016-12-21 |
株式会社フジミインコーポレーテッド |
表面選択性研磨組成物
|
|
US10090159B2
(en)
*
|
2013-05-15 |
2018-10-02 |
Basf Se |
Chemical-mechanical polishing compositions comprising one or more polymers selected from the group consisting of N-vinyl-homopolymers and N-vinyl copolymers
|
|
KR102225154B1
(ko)
|
2013-06-12 |
2021-03-09 |
쇼와덴코머티리얼즈가부시끼가이샤 |
Cmp용 연마액 및 연마 방법
|
|
US9284472B2
(en)
|
2013-08-09 |
2016-03-15 |
Fujimi Incorporated |
SiCN and SiN polishing slurries and polishing methods using the same
|
|
CN103484876B
(zh)
*
|
2013-09-23 |
2016-01-13 |
无锡阳工机械制造有限公司 |
一种除锈浆料
|
|
CN103526207B
(zh)
*
|
2013-09-23 |
2016-01-20 |
无锡阳工机械制造有限公司 |
一种除锈浆料
|
|
CN103498160B
(zh)
*
|
2013-09-23 |
2016-01-20 |
无锡阳工机械制造有限公司 |
一种抛光浆料
|
|
CN103498161B
(zh)
*
|
2013-09-23 |
2016-01-20 |
无锡阳工机械制造有限公司 |
一种金属抛光防腐浆料
|
|
US9850402B2
(en)
*
|
2013-12-09 |
2017-12-26 |
Cabot Microelectronics Corporation |
CMP compositions and methods for selective removal of silicon nitride
|
|
CN103666282B
(zh)
*
|
2013-12-13 |
2015-02-25 |
上海大学 |
用于计算机硬盘基片无磨粒抛光液组合物
|
|
CN104745083B
(zh)
*
|
2013-12-25 |
2018-09-14 |
安集微电子(上海)有限公司 |
一种化学机械抛光液以及抛光方法
|
|
CN103756571A
(zh)
*
|
2013-12-25 |
2014-04-30 |
上海华明高纳稀土新材料有限公司 |
稀土抛光粉及其制备方法
|
|
CN104745087B
(zh)
*
|
2013-12-25 |
2018-07-24 |
安集微电子(上海)有限公司 |
一种化学机械抛光液以及抛光方法
|
|
US9238754B2
(en)
|
2014-03-11 |
2016-01-19 |
Cabot Microelectronics Corporation |
Composition for tungsten CMP
|
|
US9303188B2
(en)
|
2014-03-11 |
2016-04-05 |
Cabot Microelectronics Corporation |
Composition for tungsten CMP
|
|
US9303189B2
(en)
|
2014-03-11 |
2016-04-05 |
Cabot Microelectronics Corporation |
Composition for tungsten CMP
|
|
US9309442B2
(en)
|
2014-03-21 |
2016-04-12 |
Cabot Microelectronics Corporation |
Composition for tungsten buffing
|
|
US9127187B1
(en)
|
2014-03-24 |
2015-09-08 |
Cabot Microelectronics Corporation |
Mixed abrasive tungsten CMP composition
|
|
US9303190B2
(en)
|
2014-03-24 |
2016-04-05 |
Cabot Microelectronics Corporation |
Mixed abrasive tungsten CMP composition
|
|
CN106133105B
(zh)
*
|
2014-03-28 |
2018-04-03 |
福吉米株式会社 |
研磨用组合物及使用其的研磨方法
|
|
JP6350861B2
(ja)
*
|
2014-07-15 |
2018-07-04 |
スピードファム株式会社 |
コロイダルシリカ及びそれを含有する半導体ウエハ研磨用組成物
|
|
JP6517555B2
(ja)
*
|
2014-09-30 |
2019-05-22 |
株式会社フジミインコーポレーテッド |
研磨用組成物およびそれを用いた研磨方法
|
|
US9873180B2
(en)
|
2014-10-17 |
2018-01-23 |
Applied Materials, Inc. |
CMP pad construction with composite material properties using additive manufacturing processes
|
|
US10875153B2
(en)
|
2014-10-17 |
2020-12-29 |
Applied Materials, Inc. |
Advanced polishing pad materials and formulations
|
|
US11745302B2
(en)
|
2014-10-17 |
2023-09-05 |
Applied Materials, Inc. |
Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
|
|
US9776361B2
(en)
|
2014-10-17 |
2017-10-03 |
Applied Materials, Inc. |
Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
|
|
KR20240015167A
(ko)
|
2014-10-17 |
2024-02-02 |
어플라이드 머티어리얼스, 인코포레이티드 |
애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성
|
|
CN105802507A
(zh)
*
|
2014-12-29 |
2016-07-27 |
安集微电子(上海)有限公司 |
一种化学机械抛光液及其应用
|
|
JP6028046B2
(ja)
*
|
2015-01-05 |
2016-11-16 |
株式会社フジミインコーポレーテッド |
研磨用組成物及びそれを用いた研磨方法
|
|
US9758697B2
(en)
|
2015-03-05 |
2017-09-12 |
Cabot Microelectronics Corporation |
Polishing composition containing cationic polymer additive
|
|
US9505952B2
(en)
|
2015-03-05 |
2016-11-29 |
Cabot Microelectronics Corporation |
Polishing composition containing ceria abrasive
|
|
US10414947B2
(en)
|
2015-03-05 |
2019-09-17 |
Cabot Microelectronics Corporation |
Polishing composition containing ceria particles and method of use
|
|
CN105369253B
(zh)
*
|
2015-10-21 |
2017-11-17 |
上海铝通化学科技有限公司 |
防冲孔铝化学抛光添加剂及其应用
|
|
JP2017082061A
(ja)
*
|
2015-10-26 |
2017-05-18 |
関東化學株式会社 |
ゲル化剤
|
|
JP6940495B2
(ja)
|
2015-10-30 |
2021-09-29 |
アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated |
所望のゼータ電位を有する研磨用物品を形成するための装置及び方法
|
|
US10593574B2
(en)
|
2015-11-06 |
2020-03-17 |
Applied Materials, Inc. |
Techniques for combining CMP process tracking data with 3D printed CMP consumables
|
|
KR20170076191A
(ko)
*
|
2015-12-24 |
2017-07-04 |
주식회사 케이씨텍 |
연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물
|
|
US10391605B2
(en)
|
2016-01-19 |
2019-08-27 |
Applied Materials, Inc. |
Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
|
|
EP3408342B1
(de)
*
|
2016-01-25 |
2024-03-06 |
CMC Materials LLC |
Polierzusammensetzung mit kationischem polymeradditiv
|
|
CN106010297B
(zh)
|
2016-06-20 |
2018-07-31 |
上海新安纳电子科技有限公司 |
一种氧化铝抛光液的制备方法
|
|
KR101943704B1
(ko)
*
|
2016-06-27 |
2019-01-29 |
삼성에스디아이 주식회사 |
금속막용 cmp 슬러리 조성물 및 연마 방법
|
|
JP6282708B2
(ja)
*
|
2016-10-07 |
2018-02-21 |
株式会社フジミインコーポレーテッド |
研磨用組成物、それを用いた研磨方法、及びその製造方法
|
|
EP3638626B1
(de)
*
|
2017-06-15 |
2021-12-29 |
Rhodia Operations |
Cer-basierte teilchen
|
|
US11471999B2
(en)
*
|
2017-07-26 |
2022-10-18 |
Applied Materials, Inc. |
Integrated abrasive polishing pads and manufacturing methods
|
|
WO2019032286A1
(en)
|
2017-08-07 |
2019-02-14 |
Applied Materials, Inc. |
ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
|
|
KR102846745B1
(ko)
*
|
2017-09-29 |
2025-08-13 |
가부시끼가이샤 레조낙 |
연마액, 연마액 세트 및 연마 방법
|
|
US11043151B2
(en)
*
|
2017-10-03 |
2021-06-22 |
Cmc Materials, Inc. |
Surface treated abrasive particles for tungsten buff applications
|
|
CN108084888B
(zh)
*
|
2018-01-18 |
2020-07-31 |
合肥京东方半导体有限公司 |
一种抛光液用基液及其制备方法
|
|
JP2019167404A
(ja)
*
|
2018-03-22 |
2019-10-03 |
Jsr株式会社 |
化学機械研磨用組成物及び回路基板の製造方法
|
|
WO2020050932A1
(en)
|
2018-09-04 |
2020-03-12 |
Applied Materials, Inc. |
Formulations for advanced polishing pads
|
|
US20200172759A1
(en)
*
|
2018-12-04 |
2020-06-04 |
Cabot Microelectronics Corporation |
Composition and method for cobalt cmp
|
|
US10781343B2
(en)
|
2019-01-24 |
2020-09-22 |
Rohm And Haas Electronic Materials Cmp Holdings, Inc. |
Acid polishing composition and method of polishing a substrate having enhanced defect inhibition
|
|
TW202132527A
(zh)
*
|
2019-12-12 |
2021-09-01 |
日商Jsr股份有限公司 |
化學機械研磨用組成物及研磨方法
|
|
KR20210095465A
(ko)
*
|
2020-01-23 |
2021-08-02 |
삼성에스디아이 주식회사 |
텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
|
|
CN112872916B
(zh)
*
|
2020-12-28 |
2023-03-10 |
富联裕展科技(深圳)有限公司 |
抛光系统及抛光方法
|
|
KR102577164B1
(ko)
*
|
2020-12-29 |
2023-09-08 |
에스케이엔펄스 주식회사 |
반도체 공정용 연마 조성물 및 연마 조성물을 적용한 기판의 연마방법
|
|
US11878389B2
(en)
|
2021-02-10 |
2024-01-23 |
Applied Materials, Inc. |
Structures formed using an additive manufacturing process for regenerating surface texture in situ
|
|
KR20220149148A
(ko)
|
2021-04-30 |
2022-11-08 |
에스케이씨솔믹스 주식회사 |
반도체 공정용 연마 조성물 및 연마 조성물을 적용한 반도체 소자의 제조 방법
|
|
CN116200127A
(zh)
*
|
2021-11-30 |
2023-06-02 |
安集微电子(上海)有限公司 |
一种制备纳米复合颗粒分散液的方法及纳米复合颗粒分散液、化学机械抛光液
|
|
CN114481286A
(zh)
*
|
2021-12-28 |
2022-05-13 |
广东省科学院化工研究所 |
一种用于电解抛光的固体颗粒物
|
|
CN116640518B
(zh)
*
|
2023-05-23 |
2025-05-30 |
浙江陶特容器科技股份有限公司 |
一种流体研磨剂及其应用
|