ATE474071T1 - Target/trägerplatte-konstruktionen und herstellungsverfahren dafür - Google Patents

Target/trägerplatte-konstruktionen und herstellungsverfahren dafür

Info

Publication number
ATE474071T1
ATE474071T1 AT04780608T AT04780608T ATE474071T1 AT E474071 T1 ATE474071 T1 AT E474071T1 AT 04780608 T AT04780608 T AT 04780608T AT 04780608 T AT04780608 T AT 04780608T AT E474071 T1 ATE474071 T1 AT E474071T1
Authority
AT
Austria
Prior art keywords
target
backing plate
support plate
plate constructions
manufacturing methods
Prior art date
Application number
AT04780608T
Other languages
English (en)
Inventor
Wuwen Yi
Ravi Rastogi
Jaeyeon Kim
Brett Clark
Susan Strothers
Michael Pinter
Janine Kardokus
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Application granted granted Critical
Publication of ATE474071T1 publication Critical patent/ATE474071T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/06—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of high energy impulses, e.g. magnetic energy
    • B23K20/08—Explosive welding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Powder Metallurgy (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
AT04780608T 2003-08-11 2004-08-10 Target/trägerplatte-konstruktionen und herstellungsverfahren dafür ATE474071T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49507003P 2003-08-11 2003-08-11
PCT/US2004/025801 WO2005019493A2 (en) 2003-08-11 2004-08-10 Target/backing plate constructions, and methods of forming them

Publications (1)

Publication Number Publication Date
ATE474071T1 true ATE474071T1 (de) 2010-07-15

Family

ID=34215913

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04780608T ATE474071T1 (de) 2003-08-11 2004-08-10 Target/trägerplatte-konstruktionen und herstellungsverfahren dafür

Country Status (9)

Country Link
US (1) US20080197017A1 (de)
EP (2) EP1654395B1 (de)
JP (1) JP4970034B2 (de)
KR (1) KR20060037255A (de)
CN (1) CN1802450B (de)
AT (1) ATE474071T1 (de)
DE (1) DE602004028129D1 (de)
TW (1) TW200606269A (de)
WO (1) WO2005019493A2 (de)

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EP1715077A4 (de) * 2003-12-25 2010-09-29 Nippon Mining Co Anordnung aus kupfer- oder kupferlegierungstarget und kupferlegierungsträgerplatte
US9034154B2 (en) * 2009-03-03 2015-05-19 Jx Nippon Mining & Metals Corporation Sputtering target and process for producing same
KR20140129250A (ko) 2009-11-20 2014-11-06 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 스퍼터링 타깃-백킹 플레이트 접합체 및 그 제조 방법
JP4872014B1 (ja) * 2010-08-31 2012-02-08 Ｊｘ日鉱日石金属株式会社 積層構造体及びその製造方法
CN101956167B (zh) * 2010-10-28 2012-08-29 宁波江丰电子材料有限公司 一种靶材结构的制作方法
CN103210116A (zh) * 2010-11-17 2013-07-17 株式会社爱发科 背衬板、靶组件和溅射靶
SG11201510706UA (en) * 2013-07-09 2016-01-28 Oerlikon Surface Solutions Ag Trubbach Target for the reactive sputter deposition of electrically insulating layers
CN104690410A (zh) * 2013-12-05 2015-06-10 有研亿金新材料股份有限公司 一种靶材组件的制备方法
US9761420B2 (en) 2013-12-13 2017-09-12 Praxair S.T. Technology, Inc. Diffusion bonded high purity copper sputtering target assemblies
CN108076645A (zh) * 2015-07-17 2018-05-25 霍尼韦尔国际公司 金属和金属合金制品的热处理方法
US20170287685A1 (en) * 2016-04-01 2017-10-05 Honeywell International Inc. Sputtering target assembly having a graded interlayer and methods of making
WO2025129091A1 (en) 2023-12-15 2025-06-19 Materion Corporation Sputtering target assemblies, backing plate for same, and processes for making

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Also Published As

Publication number Publication date
JP4970034B2 (ja) 2012-07-04
CN1802450A (zh) 2006-07-12
EP1654395B1 (de) 2010-07-14
TW200606269A (en) 2006-02-16
EP2213763A2 (de) 2010-08-04
EP1654395A2 (de) 2006-05-10
DE602004028129D1 (de) 2010-08-26
CN1802450B (zh) 2010-11-03
KR20060037255A (ko) 2006-05-03
EP2213763A3 (de) 2010-08-18
US20080197017A1 (en) 2008-08-21
JP2007502366A (ja) 2007-02-08
WO2005019493A2 (en) 2005-03-03
WO2005019493A3 (en) 2005-09-09

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