ATE475987T1 - Zusammenfügen eines substrates mit einem elektrisch leitenden film mit einem zweiten substrat durch molekulare adhäsion - Google Patents

Zusammenfügen eines substrates mit einem elektrisch leitenden film mit einem zweiten substrat durch molekulare adhäsion

Info

Publication number
ATE475987T1
ATE475987T1 AT05782182T AT05782182T ATE475987T1 AT E475987 T1 ATE475987 T1 AT E475987T1 AT 05782182 T AT05782182 T AT 05782182T AT 05782182 T AT05782182 T AT 05782182T AT E475987 T1 ATE475987 T1 AT E475987T1
Authority
AT
Austria
Prior art keywords
substrate
layer
bond
joining
electrically conductive
Prior art date
Application number
AT05782182T
Other languages
English (en)
Inventor
Hubert Moriceau
Guy Feuillet
Stephane Pocas
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE475987T1 publication Critical patent/ATE475987T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/322—Multilayered die-attach connectors, e.g. a coating on a top surface of a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/922—Bond pads being integral with underlying chip-level interconnections
    • H10W72/9226—Bond pads being integral with underlying chip-level interconnections with via interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Combinations Of Printed Boards (AREA)
  • Laminated Bodies (AREA)
AT05782182T 2004-06-30 2005-06-29 Zusammenfügen eines substrates mit einem elektrisch leitenden film mit einem zweiten substrat durch molekulare adhäsion ATE475987T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0451376A FR2872625B1 (fr) 2004-06-30 2004-06-30 Assemblage par adhesion moleculaire de deux substrats, l'un au moins supportant un film conducteur electrique
PCT/FR2005/050521 WO2006008410A1 (fr) 2004-06-30 2005-06-29 Assemblage par adhesion moleculaire de deux substrats, l'un au moins supportant un film conducteur electrique

Publications (1)

Publication Number Publication Date
ATE475987T1 true ATE475987T1 (de) 2010-08-15

Family

ID=34947551

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05782182T ATE475987T1 (de) 2004-06-30 2005-06-29 Zusammenfügen eines substrates mit einem elektrisch leitenden film mit einem zweiten substrat durch molekulare adhäsion

Country Status (6)

Country Link
US (1) US20080041517A1 (de)
EP (1) EP1774589B1 (de)
AT (1) ATE475987T1 (de)
DE (1) DE602005022588D1 (de)
FR (1) FR2872625B1 (de)
WO (1) WO2006008410A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2864336B1 (fr) * 2003-12-23 2006-04-28 Commissariat Energie Atomique Procede de scellement de deux plaques avec formation d'un contact ohmique entre celles-ci
US7399680B2 (en) * 2004-11-24 2008-07-15 Silicon Genesis Corporation Method and structure for implanting bonded substrates for electrical conductivity
FR2880189B1 (fr) * 2004-12-24 2007-03-30 Tracit Technologies Sa Procede de report d'un circuit sur un plan de masse
FR2956869B1 (fr) 2010-03-01 2014-05-16 Alex Hr Roustaei Systeme de production de film flexible a haute capacite destine a des cellules photovoltaiques et oled par deposition cyclique des couches
US7939369B2 (en) 2009-05-14 2011-05-10 International Business Machines Corporation 3D integration structure and method using bonded metal planes
US8507966B2 (en) * 2010-03-02 2013-08-13 Micron Technology, Inc. Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
US9608119B2 (en) 2010-03-02 2017-03-28 Micron Technology, Inc. Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
FR2961013B1 (fr) 2010-06-03 2013-05-17 Commissariat Energie Atomique Procede pour eliminer des impuretes residuelles extrinseques dans un substrat en zno ou en znmgo de type n, et pour realiser un dopage de type p de ce substrat.
US8778773B2 (en) 2010-12-16 2014-07-15 Soitec Methods for directly bonding together semiconductor structures, and bonded semiconductor structures formed using such methods
FR2969814A1 (fr) * 2010-12-23 2012-06-29 Soitec Silicon On Insulator Procédés pour lier directement les unes aux autres des structures semi-conductrices, et structures semi-conductrices liées formées en utilisant ces procédés
TWI458072B (zh) * 2010-12-16 2014-10-21 索泰克公司 將半導體構造直接黏附在一起之方法以及應用此等方法所形成之黏附半導體構造
US8952418B2 (en) 2011-03-01 2015-02-10 Micron Technology, Inc. Gated bipolar junction transistors
US8802461B2 (en) 2011-03-22 2014-08-12 Micron Technology, Inc. Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
US8501537B2 (en) 2011-03-31 2013-08-06 Soitec Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures formed using such methods
TWI471951B (zh) * 2011-03-31 2015-02-01 梭意泰科公司 包含退火程序之半導體結構接合方法，經接合的半導體結構及使用該方法所形成的中間結構
FR2973937B1 (fr) * 2011-04-08 2013-11-01 Soitec Silicon On Insulator Procédés de collage de structures semi-conductrices comprenant des processus de recuit, et structures semi-conductrices liées et structures intermédiaires formées au moyen de tels procédés
FR2973934B1 (fr) * 2011-04-08 2013-05-03 Soitec Silicon On Insulator Procédés de collage de structures semi-conductrices impliquant des processus de recuit, et structures semi-conductrices collées formées en utilisant ces procédés
TWI506699B (zh) * 2011-03-31 2015-11-01 蘇泰克公司 牽涉退火處理之用以結合半導體結構的方法以及使用此等方法形成之經結合半導體結構
US8716105B2 (en) 2011-03-31 2014-05-06 Soitec Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures and intermediate structures formed using such methods
EP2729961A1 (de) 2011-08-30 2014-05-14 Ev Group E. Thallner GmbH Verfahren zum permanenten bonden von wafern durch eine verbindungsschicht mittels festkörperdiffusion oder phasenumwandlung
KR102092737B1 (ko) * 2012-04-10 2020-05-27 랜 테크니컬 서비스 가부시키가이샤 고분자 필름과 고분자 필름을 접합하는 방법, 고분자 필름과 무기재료 기판을 접합하는 방법, 고분자 필름 적층체 및 고분자 필름과 무기재료 기판의 적층체
JP6165127B2 (ja) * 2014-12-22 2017-07-19 三菱重工工作機械株式会社 半導体装置及び半導体装置の製造方法
EP3671820A1 (de) 2014-12-23 2020-06-24 EV Group E. Thallner GmbH Verfahren und vorrichtung zur vorfixierung von substraten
FR3039318B1 (fr) * 2015-07-24 2017-07-21 Commissariat Energie Atomique Procede de controle de cristallisation d’une couche par incorporation d’un element
FR3045939B1 (fr) * 2015-12-22 2018-03-30 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de collage direct entre deux structures
FR3098985B1 (fr) * 2019-07-15 2022-04-08 Soitec Silicon On Insulator Procédé de collage hydrophile de substrats

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
FR2783969B1 (fr) * 1998-09-28 2002-01-18 Commissariat Energie Atomique Dispositif hybride et procede de realisation de composants electriquement actifs par assemblage
US6242324B1 (en) * 1999-08-10 2001-06-05 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating singe crystal materials over CMOS devices
FR2798224B1 (fr) * 1999-09-08 2003-08-29 Commissariat Energie Atomique Realisation d'un collage electriquement conducteur entre deux elements semi-conducteurs.

Also Published As

Publication number Publication date
WO2006008410A1 (fr) 2006-01-26
EP1774589B1 (de) 2010-07-28
EP1774589A1 (de) 2007-04-18
FR2872625B1 (fr) 2006-09-22
US20080041517A1 (en) 2008-02-21
DE602005022588D1 (de) 2010-09-09
FR2872625A1 (fr) 2006-01-06

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