ATE477353T1 - Submikrone metallisierung unter verwendung elektrochemischer beschichtung - Google Patents

Submikrone metallisierung unter verwendung elektrochemischer beschichtung

Info

Publication number
ATE477353T1
ATE477353T1 AT99954748T AT99954748T ATE477353T1 AT E477353 T1 ATE477353 T1 AT E477353T1 AT 99954748 T AT99954748 T AT 99954748T AT 99954748 T AT99954748 T AT 99954748T AT E477353 T1 ATE477353 T1 AT E477353T1
Authority
AT
Austria
Prior art keywords
electroplating
micro
metal
current density
recessed structure
Prior art date
Application number
AT99954748T
Other languages
English (en)
Inventor
Linlin Chen
Lyndon Graham
Thomas Ritzdorf
Dakin Fulton
Original Assignee
Semitool Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semitool Inc filed Critical Semitool Inc
Application granted granted Critical
Publication of ATE477353T1 publication Critical patent/ATE477353T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Secondary Cells (AREA)
AT99954748T 1998-10-05 1999-10-05 Submikrone metallisierung unter verwendung elektrochemischer beschichtung ATE477353T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10306198P 1998-10-05 1998-10-05
PCT/US1999/023187 WO2000020662A1 (en) 1998-10-05 1999-10-05 Submicron metallization using electrochemical deposition

Publications (1)

Publication Number Publication Date
ATE477353T1 true ATE477353T1 (de) 2010-08-15

Family

ID=22293166

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99954748T ATE477353T1 (de) 1998-10-05 1999-10-05 Submikrone metallisierung unter verwendung elektrochemischer beschichtung

Country Status (5)

Country Link
EP (1) EP1125007B1 (de)
JP (1) JP2002526663A (de)
AT (1) ATE477353T1 (de)
DE (1) DE69942669D1 (de)
WO (1) WO2000020662A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7244677B2 (en) 1998-02-04 2007-07-17 Semitool. Inc. Method for filling recessed micro-structures with metallization in the production of a microelectronic device
JP3641372B2 (ja) * 1998-10-21 2005-04-20 株式会社荏原製作所 電解めっき方法及び電解めっき装置
US6913680B1 (en) 2000-05-02 2005-07-05 Applied Materials, Inc. Method of application of electrical biasing to enhance metal deposition
JP2002121699A (ja) * 2000-05-25 2002-04-26 Nippon Techno Kk めっき浴の振動流動とパルス状めっき電流との組み合わせを用いた電気めっき方法
JP5000941B2 (ja) * 2006-07-27 2012-08-15 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5767154B2 (ja) * 2012-04-13 2015-08-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5749302B2 (ja) * 2013-08-20 2015-07-15 株式会社荏原製作所 めっき方法
JP6450560B2 (ja) * 2014-10-24 2019-01-09 新日本無線株式会社 半導体装置およびその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR960114A (de) * 1942-05-04 1950-04-13
US3894918A (en) * 1973-12-20 1975-07-15 Western Electric Co Methods of treating portions of articles
US4250004A (en) * 1980-02-25 1981-02-10 Olin Corporation Process for the preparation of low overvoltage electrodes
US4514265A (en) * 1984-07-05 1985-04-30 Rca Corporation Bonding pads for semiconductor devices
US4869971A (en) * 1986-05-22 1989-09-26 Nee Chin Cheng Multilayer pulsed-current electrodeposition process
JPH03104230A (ja) * 1989-09-19 1991-05-01 Fujitsu Ltd 半導体装置の製造方法
JPH03208347A (ja) * 1990-01-10 1991-09-11 Mitsubishi Electric Corp 突起電極形成方法
JPH07336017A (ja) * 1994-06-08 1995-12-22 Hitachi Ltd 電流反転電解法による薄膜回路製造方法ならびにそれを用いた薄膜回路基板、薄膜多層回路基板および電子回路装置
US5605615A (en) * 1994-12-05 1997-02-25 Motorola, Inc. Method and apparatus for plating metals
JP3561582B2 (ja) * 1996-09-18 2004-09-02 沖電気工業株式会社 半導体装置の製造方法
JPH1098268A (ja) * 1996-09-24 1998-04-14 Oki Electric Ind Co Ltd 柱状導体のめっき方法及びそれにより得られる多層プリント配線板
US5972192A (en) * 1997-07-23 1999-10-26 Advanced Micro Devices, Inc. Pulse electroplating copper or copper alloys
JP3694594B2 (ja) * 1998-09-03 2005-09-14 株式会社荏原製作所 微細孔および／または微細溝を有する基材の孔埋めめっき方法

Also Published As

Publication number Publication date
JP2002526663A (ja) 2002-08-20
EP1125007A1 (de) 2001-08-22
WO2000020662A1 (en) 2000-04-13
DE69942669D1 (de) 2010-09-23
WO2000020662A9 (en) 2000-09-14
EP1125007A4 (de) 2003-05-28
EP1125007B1 (de) 2010-08-11

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Legal Events

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