ATE478469T1 - Selbstvorgespannter kaskodenhochfrequenzleistungsverstärker in submikrontechnologie - Google Patents

Selbstvorgespannter kaskodenhochfrequenzleistungsverstärker in submikrontechnologie

Info

Publication number
ATE478469T1
ATE478469T1 AT02735881T AT02735881T ATE478469T1 AT E478469 T1 ATE478469 T1 AT E478469T1 AT 02735881 T AT02735881 T AT 02735881T AT 02735881 T AT02735881 T AT 02735881T AT E478469 T1 ATE478469 T1 AT E478469T1
Authority
AT
Austria
Prior art keywords
mosfet
coupled
self
amplifier circuit
high frequency
Prior art date
Application number
AT02735881T
Other languages
English (en)
Inventor
Tirdad Sowlati
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE478469T1 publication Critical patent/ATE478469T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
AT02735881T 2001-06-26 2002-06-18 Selbstvorgespannter kaskodenhochfrequenzleistungsverstärker in submikrontechnologie ATE478469T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/891,669 US6515547B2 (en) 2001-06-26 2001-06-26 Self-biased cascode RF power amplifier in sub-micron technical field
PCT/IB2002/002331 WO2003001661A1 (en) 2001-06-26 2002-06-18 Self-biased cascode rf power amplifier in sub-micron

Publications (1)

Publication Number Publication Date
ATE478469T1 true ATE478469T1 (de) 2010-09-15

Family

ID=25398627

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02735881T ATE478469T1 (de) 2001-06-26 2002-06-18 Selbstvorgespannter kaskodenhochfrequenzleistungsverstärker in submikrontechnologie

Country Status (8)

Country Link
US (1) US6515547B2 (de)
EP (1) EP1405403B1 (de)
JP (2) JP2004531164A (de)
KR (1) KR20030029857A (de)
CN (1) CN100486108C (de)
AT (1) ATE478469T1 (de)
DE (1) DE60237369D1 (de)
WO (1) WO2003001661A1 (de)

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CN100464497C (zh) * 2002-04-19 2009-02-25 Nxp股份有限公司 电子放大器电路
US7062247B2 (en) * 2002-05-15 2006-06-13 Nec Corporation Active double-balanced mixer
US6781459B1 (en) * 2003-04-24 2004-08-24 Omega Reception Technologies, Inc. Circuit for improved differential amplifier and other applications
US7135932B2 (en) * 2003-07-08 2006-11-14 Sires Labs Sdn. Bhd. Transimpedance amplifier
JP4262545B2 (ja) * 2003-07-09 2009-05-13 三菱電機株式会社 カスコード接続回路及びその集積回路
US7421254B2 (en) * 2003-10-23 2008-09-02 Broadcom Corporation High linearity, high efficiency power amplifier with DSP assisted linearity optimization
SE528052C2 (sv) * 2004-02-05 2006-08-22 Infineon Technologies Ag Radiofrekvenseffektförstärkare med kaskadkopplade MOS-transistorer
WO2006002347A1 (en) 2004-06-23 2006-01-05 Peregrine Semiconductor Corporation Integrated rf front end
US7349681B2 (en) * 2004-07-13 2008-03-25 Taiwan Semiconductor Manufacturing Company, Ltd. Self-biased high-speed receiver
US7151412B2 (en) * 2004-08-30 2006-12-19 Bae Systems Information And Electronic Systems Integration Inc. Sliding cascode circuit
US7276976B2 (en) * 2004-12-02 2007-10-02 Electronics And Telecommunications Research Institute Triple cascode power amplifier of inner parallel configuration with dynamic gate bias technique
US7135925B2 (en) * 2004-12-03 2006-11-14 Rambus Inc. Adaptive bias scheme for high-voltage compliance in serial links
US7259626B2 (en) * 2004-12-28 2007-08-21 Broadcom Corporation Apparatus and method for biasing cascode devices in a differential pair using the input, output, or other nodes in the circuit
KR100703595B1 (ko) * 2005-10-17 2007-04-06 성균관대학교산학협력단 개선된 선형특성을 갖는 캐스코드형 증폭기
US7453315B2 (en) * 2006-04-26 2008-11-18 Infineon Technologies Ag Active inductive load that enhances circuit bandwidth
US7420417B2 (en) * 2006-06-05 2008-09-02 Win Semiconductors Corp. Two-port dual-gate HEMT for discrete device application
US7477105B2 (en) * 2006-09-08 2009-01-13 Infineon Technologies Ag Amplifier arrangement and method for amplifying a signal
US20080297262A1 (en) * 2007-05-31 2008-12-04 Duster Jon S Increased gain high-frequency amplifier
US7642853B2 (en) * 2007-08-23 2010-01-05 Qualcomm, Incorporated High-swing operational amplifier output stage using adaptive biasing
US7839219B2 (en) * 2007-10-24 2010-11-23 Industrial Technology Research Institute Low-noise amplifier circuit including band-stop filter
JP2009207030A (ja) * 2008-02-29 2009-09-10 Nippon Telegr & Teleph Corp <Ntt> 電力増幅回路および無線通信回路
JP2010068261A (ja) * 2008-09-11 2010-03-25 Mitsubishi Electric Corp カスコード回路
US8022772B2 (en) * 2009-03-19 2011-09-20 Qualcomm Incorporated Cascode amplifier with protection circuitry
US8487706B2 (en) * 2010-01-25 2013-07-16 Peregrine Semiconductor Corporation Stacked linear power amplifier with capacitor feedback and resistor isolation
US8786368B2 (en) 2011-03-09 2014-07-22 Hittite Microwave Corporation Distributed amplifier with improved stabilization
CN102723917B (zh) * 2011-03-30 2016-06-01 比亚迪股份有限公司 一种功率放大器
KR101726109B1 (ko) * 2012-11-09 2017-04-11 미쓰비시덴키 가부시키가이샤 캐스코드 앰프
US9106072B2 (en) * 2012-12-19 2015-08-11 Qualcomm Incorporated Electrostatic discharge protection of amplifier cascode devices
US9082631B1 (en) * 2014-05-07 2015-07-14 Realtek Semiconductor Corp. Linear equalizer circuit and method thereof
US9673853B2 (en) * 2014-08-21 2017-06-06 Skyworks Solutions, Inc. Cascode power amplifier with voltage limiter
CN104639069B (zh) * 2015-02-13 2017-08-11 康希通信科技（上海）有限公司 一种射频放大电路及其功率限制模块
US9654155B2 (en) 2015-02-15 2017-05-16 Skyworks Solutions, Inc. Cascode amplifier segmentation for enhanced thermal ruggedness
US9874893B2 (en) 2015-05-27 2018-01-23 Analog Devices, Inc. Self-biased multiple cascode current mirror circuit
CN105024652B (zh) * 2015-07-08 2017-10-10 华东师范大学 一种基于65nm CMOS工艺的81‑86GHz全集成差分功率放大器
US9520836B1 (en) 2015-08-13 2016-12-13 Raytheon Company Multi-stage amplifier with cascode stage and DC bias regulator
US9584072B1 (en) 2015-08-13 2017-02-28 Raytheon Company DC bias regulator for cascode amplifier
EP3357158B1 (de) * 2015-09-30 2026-03-04 Telefonaktiebolaget LM Ericsson (PUBL) Verstärker, filter, kommunikationsvorrichtung und netzwerkknoten
CN106230392A (zh) * 2016-07-18 2016-12-14 东南大学 一种偏置节点自适应的高线性包络跟踪功率放大器
US9837965B1 (en) 2016-09-16 2017-12-05 Peregrine Semiconductor Corporation Standby voltage condition for fast RF amplifier bias recovery
US10038413B2 (en) * 2016-12-13 2018-07-31 Globalfoundries Inc. Fully depleted silicon on insulator power amplifier
US9960737B1 (en) 2017-03-06 2018-05-01 Psemi Corporation Stacked PA power control
US9979358B1 (en) * 2017-04-28 2018-05-22 Inphi Corporation Differential amplifier with extended bandwidth and THD reduction
US10608588B2 (en) 2017-12-26 2020-03-31 Nxp Usa, Inc. Amplifiers and related integrated circuits
CN112585866B (zh) 2018-05-07 2025-02-25 Macom技术解决方案控股公司 具有直流耦合级的紧凑高增益放大器
JP2020096294A (ja) * 2018-12-13 2020-06-18 株式会社村田製作所 電力増幅回路
JP2021141409A (ja) 2020-03-04 2021-09-16 富士通株式会社 増幅器
CN112187191B (zh) * 2020-09-24 2024-07-16 电子科技大学 一种采用双增益提升电感的共源共栅放大器
JP7581787B2 (ja) * 2020-11-19 2024-11-13 住友電気工業株式会社 駆動回路および半導体集積回路
JP7341358B2 (ja) * 2020-12-16 2023-09-08 三菱電機株式会社 電力増幅回路
US11601098B2 (en) * 2021-03-26 2023-03-07 Psemi Corporation Differential cascode amplifier arrangement with reduced common mode gate RF voltage

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DE3026040C2 (de) * 1980-07-09 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Schalter mit in Serie geschalteten MOS-FET
US5032799A (en) * 1989-10-04 1991-07-16 Westinghouse Electric Corp. Multistage cascode radio frequency amplifier
US5559472A (en) * 1995-05-02 1996-09-24 Trw Inc. Loss compensated gain cell for distributed amplifiers
JP3580092B2 (ja) * 1997-08-21 2004-10-20 セイコーエプソン株式会社 アクティブマトリクス型表示装置
US6137367A (en) * 1998-03-24 2000-10-24 Amcom Communications, Inc. High power high impedance microwave devices for power applications
US6191653B1 (en) * 1998-11-18 2001-02-20 Ericsson Inc. Circuit and method for linearizing amplitude modulation in a power amplifier
JP3515725B2 (ja) * 2000-01-26 2004-04-05 Ｎｅｃ化合物デバイス株式会社 低電流増幅回路

Also Published As

Publication number Publication date
KR20030029857A (ko) 2003-04-16
DE60237369D1 (de) 2010-09-30
WO2003001661A1 (en) 2003-01-03
EP1405403A1 (de) 2004-04-07
CN1647365A (zh) 2005-07-27
JP2004531164A (ja) 2004-10-07
EP1405403B1 (de) 2010-08-18
US20020196086A1 (en) 2002-12-26
US6515547B2 (en) 2003-02-04
JP2008259239A (ja) 2008-10-23
CN100486108C (zh) 2009-05-06

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