ATE480009T1 - Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren - Google Patents

Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren

Info

Publication number
ATE480009T1
ATE480009T1 AT05856921T AT05856921T ATE480009T1 AT E480009 T1 ATE480009 T1 AT E480009T1 AT 05856921 T AT05856921 T AT 05856921T AT 05856921 T AT05856921 T AT 05856921T AT E480009 T1 ATE480009 T1 AT E480009T1
Authority
AT
Austria
Prior art keywords
electron
laser
substrate
surface layers
microstructured surface
Prior art date
Application number
AT05856921T
Other languages
English (en)
Inventor
Eric Mazur
James Carey
Original Assignee
Harvard College
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/950,248 external-priority patent/US7354792B2/en
Priority claimed from US10/950,230 external-priority patent/US7057256B2/en
Application filed by Harvard College filed Critical Harvard College
Application granted granted Critical
Publication of ATE480009T1 publication Critical patent/ATE480009T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Silicon Compounds (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
AT05856921T 2004-09-24 2005-09-23 Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren ATE480009T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/950,248 US7354792B2 (en) 2001-05-25 2004-09-24 Manufacture of silicon-based devices having disordered sulfur-doped surface layers
US10/950,230 US7057256B2 (en) 2001-05-25 2004-09-24 Silicon-based visible and near-infrared optoelectric devices
PCT/US2005/034180 WO2006086014A2 (en) 2004-09-24 2005-09-23 Method for manufacturing of silicon-based detektors having laser-microstructured sulfur-doped surface layers

Publications (1)

Publication Number Publication Date
ATE480009T1 true ATE480009T1 (de) 2010-09-15

Family

ID=36607386

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05856921T ATE480009T1 (de) 2004-09-24 2005-09-23 Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren

Country Status (5)

Country Link
EP (2) EP1794804B1 (de)
JP (3) JP2008515196A (de)
AT (1) ATE480009T1 (de)
DE (1) DE602005023323D1 (de)
WO (1) WO2006086014A2 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
ATE480009T1 (de) * 2004-09-24 2010-09-15 Harvard College Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren
US7586601B2 (en) 2005-06-14 2009-09-08 Ebstein Steven M Applications of laser-processed substrate for molecular diagnostics
US8184284B2 (en) 2005-06-14 2012-05-22 Ebstein Steven M Laser-processed substrate for molecular diagnostics
US7715003B2 (en) 2005-06-14 2010-05-11 President & Fellows Of Harvard College Metalized semiconductor substrates for raman spectroscopy
US8294891B2 (en) 2007-01-23 2012-10-23 President And Fellows Of Harvard College Non-invasive optical analysis using surface enhanced raman spectroscopy
US7864312B2 (en) 2007-07-30 2011-01-04 President And Fellows Of Harvard College Substrates for Raman spectroscopy having discontinuous metal coatings
US8058615B2 (en) 2008-02-29 2011-11-15 Sionyx, Inc. Wide spectral range hybrid image detector
WO2010042121A1 (en) * 2008-10-09 2010-04-15 Sionyx Inc. Method for contact formation in semiconductor device
JP2013065912A (ja) * 2009-02-24 2013-04-11 Hamamatsu Photonics Kk フォトダイオードの製造方法及びフォトダイオード
JP5185236B2 (ja) * 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオードの製造方法及びフォトダイオード
JP5185206B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP5185208B2 (ja) * 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオード及びフォトダイオードアレイ
JP5185205B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP5185207B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオードアレイ
JP5805680B2 (ja) * 2009-02-24 2015-11-04 浜松ホトニクス株式会社 フォトダイオード及びフォトダイオードアレイ
JP5185157B2 (ja) * 2009-02-25 2013-04-17 浜松ホトニクス株式会社 フォトダイオードの製造方法及びフォトダイオード
JP5363222B2 (ja) * 2009-07-13 2013-12-11 浜松ホトニクス株式会社 半導体光検出素子及び半導体光検出素子の製造方法
JP5261304B2 (ja) * 2009-07-13 2013-08-14 浜松ホトニクス株式会社 半導体光検出素子及び半導体光検出素子の製造方法
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
JP5616099B2 (ja) * 2010-04-01 2014-10-29 浜松ホトニクス株式会社 距離センサ及び距離画像センサ
JP5726434B2 (ja) * 2010-04-14 2015-06-03 浜松ホトニクス株式会社 半導体光検出素子
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN103081128B (zh) 2010-06-18 2016-11-02 西奥尼克斯公司 高速光敏设备及相关方法
DE102010061831A1 (de) * 2010-11-24 2012-05-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement und Verfahren zu seiner Herstellung
CN102169810B (zh) * 2010-12-27 2013-07-03 清华大学 一种使用真空腔的激光处理装置和处理方法
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
JP2014525091A (ja) 2011-07-13 2014-09-25 サイオニクス、インク． 生体撮像装置および関連方法
US8865507B2 (en) 2011-09-16 2014-10-21 Sionyx, Inc. Integrated visible and infrared imager devices and associated methods
CN102400227B (zh) * 2011-11-22 2013-03-13 深圳光启高等理工研究院 一种绒面黑硅材料的制备方法
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
JP5829223B2 (ja) * 2013-01-17 2015-12-09 浜松ホトニクス株式会社 フォトダイオードの製造方法及びフォトダイオード
WO2014127376A2 (en) 2013-02-15 2014-08-21 Sionyx, Inc. High dynamic range cmos image sensor having anti-blooming properties and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
CN103794563B (zh) * 2014-02-19 2017-06-06 金蔚 一种增强硅基成像器件ccd或者cmos器件红外响应的方法
CN104505432A (zh) * 2014-12-16 2015-04-08 中国科学院长春光学精密机械与物理研究所 降低黑硅材料在红外波段吸收退化的方法
CN109421402B (zh) * 2017-08-29 2020-09-22 武汉大学 一种高导电石墨烯薄膜阵列的激光雕刻制备方法
TR201819952A2 (tr) * 2018-12-20 2020-07-21 Hacettepe Ueniversitesi Geni̇ş bant araliğinda çalişan bi̇r yarii̇letken fotodi̇yot ve elde etme yöntemi̇

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4703996A (en) * 1984-08-24 1987-11-03 American Telephone And Telegraph Company, At&T Bell Laboratories Integrated optical device having integral photodetector
US5714404A (en) * 1993-11-18 1998-02-03 Regents Of The University Of California Fabrication of polycrystalline thin films by pulsed laser processing
US7390689B2 (en) * 2001-05-25 2008-06-24 President And Fellows Of Harvard College Systems and methods for light absorption and field emission using microstructured silicon
ATE480009T1 (de) * 2004-09-24 2010-09-15 Harvard College Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren

Also Published As

Publication number Publication date
EP1794804A2 (de) 2007-06-13
JP2008515196A (ja) 2008-05-08
EP2164107A2 (de) 2010-03-17
WO2006086014A2 (en) 2006-08-17
JP2014199940A (ja) 2014-10-23
DE602005023323D1 (de) 2010-10-14
WO2006086014A3 (en) 2006-09-28
JP5899271B2 (ja) 2016-04-06
JP2012064987A (ja) 2012-03-29
EP2164107A3 (de) 2010-09-15
EP1794804B1 (de) 2010-09-01
HK1108060A1 (en) 2008-04-25

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