ATE517437T1 - Lichtemittierende halbleitervorrichtung und herstellungsverfahren für eine aus einem verbindungshalbleiter bestehende lichtemittierende halbleitervorrichtung - Google Patents

Lichtemittierende halbleitervorrichtung und herstellungsverfahren für eine aus einem verbindungshalbleiter bestehende lichtemittierende halbleitervorrichtung

Info

Publication number
ATE517437T1
ATE517437T1 AT00105558T AT00105558T ATE517437T1 AT E517437 T1 ATE517437 T1 AT E517437T1 AT 00105558 T AT00105558 T AT 00105558T AT 00105558 T AT00105558 T AT 00105558T AT E517437 T1 ATE517437 T1 AT E517437T1
Authority
AT
Austria
Prior art keywords
light emitting
semiconductor light
production method
semiconductor
vacuum chamber
Prior art date
Application number
AT00105558T
Other languages
English (en)
Inventor
Takao Nakamura
Hideki Matsubara
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP10758699A external-priority patent/JP3141874B2/ja
Priority claimed from JP18141499A external-priority patent/JP3709101B2/ja
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Application granted granted Critical
Publication of ATE517437T1 publication Critical patent/ATE517437T1/de

Links

Classifications

    • EFIXED CONSTRUCTIONS
    • E05LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
    • E05BLOCKS; ACCESSORIES THEREFOR; HANDCUFFS
    • E05B63/00Locks or fastenings with special structural characteristics
    • E05B63/22Locks or fastenings with special structural characteristics operated by a pulling or pushing action perpendicular to the front plate, i.e. by pulling or pushing the wing itself
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/832Electrodes characterised by their material
    • H10H20/833Transparent materials
    • EFIXED CONSTRUCTIONS
    • E05LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
    • E05BLOCKS; ACCESSORIES THEREFOR; HANDCUFFS
    • E05B1/00Knobs or handles for wings; Knobs, handles, or press buttons for locks or latches on wings
    • E05B1/0053Handles or handle attachments facilitating operation, e.g. by children or burdened persons
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/94Laser ablative material removal

Landscapes

  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Led Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AT00105558T 1999-04-15 2000-03-16 Lichtemittierende halbleitervorrichtung und herstellungsverfahren für eine aus einem verbindungshalbleiter bestehende lichtemittierende halbleitervorrichtung ATE517437T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10758699A JP3141874B2 (ja) 1999-04-15 1999-04-15 化合物半導体発光素子の製造方法
JP18141499A JP3709101B2 (ja) 1999-06-28 1999-06-28 半導体発光素子

Publications (1)

Publication Number Publication Date
ATE517437T1 true ATE517437T1 (de) 2011-08-15

Family

ID=26447608

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00105558T ATE517437T1 (de) 1999-04-15 2000-03-16 Lichtemittierende halbleitervorrichtung und herstellungsverfahren für eine aus einem verbindungshalbleiter bestehende lichtemittierende halbleitervorrichtung

Country Status (6)

Country Link
US (2) US6876003B1 (de)
EP (2) EP1976033A2 (de)
KR (2) KR100721643B1 (de)
CN (1) CN1148811C (de)
AT (1) ATE517437T1 (de)
TW (1) TW467874B (de)

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WO2007071723A2 (en) * 2005-12-23 2007-06-28 Essilor International (Compagnie Generale D'optique) Optical article having an antistatic, antireflection coating and method of manufacturing same
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DE102007004303A1 (de) * 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
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DE102008027045A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Halbleiterleuchtdiode und Verfahren zur Herstellung einer Halbleiterleuchtdiode
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US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
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US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
CN116525642B (zh) * 2023-07-05 2024-01-09 季华实验室 显示面板、显示面板的制备方法以及显示装置

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JP3469484B2 (ja) 1998-12-24 2003-11-25 株式会社東芝 半導体発光素子およびその製造方法
JP3141874B2 (ja) 1999-04-15 2001-03-07 住友電気工業株式会社 化合物半導体発光素子の製造方法

Also Published As

Publication number Publication date
EP1976033A2 (de) 2008-10-01
EP1045456A3 (de) 2007-02-28
KR20000071682A (ko) 2000-11-25
KR100721643B1 (ko) 2007-05-23
CN1271182A (zh) 2000-10-25
US20030166308A1 (en) 2003-09-04
US6876003B1 (en) 2005-04-05
US6872649B2 (en) 2005-03-29
TW467874B (en) 2001-12-11
KR20060079179A (ko) 2006-07-05
EP1045456B1 (de) 2011-07-20
KR100688006B1 (ko) 2007-02-27
EP1045456A2 (de) 2000-10-18
CN1148811C (zh) 2004-05-05

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