ATE482474T1 - Verfahren zur herstellung eines nanopunkt- strukturierten siliziumfilms zur lichtemission - Google Patents
Verfahren zur herstellung eines nanopunkt- strukturierten siliziumfilms zur lichtemissionInfo
- Publication number
- ATE482474T1 ATE482474T1 AT03029649T AT03029649T ATE482474T1 AT E482474 T1 ATE482474 T1 AT E482474T1 AT 03029649 T AT03029649 T AT 03029649T AT 03029649 T AT03029649 T AT 03029649T AT E482474 T1 ATE482474 T1 AT E482474T1
- Authority
- AT
- Austria
- Prior art keywords
- thin film
- substrate
- shower head
- silicon nano
- chamber
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052710 silicon Inorganic materials 0.000 title abstract 4
- 239000010703 silicon Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 4
- 239000002096 quantum dot Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 239000011159 matrix material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20020083758 | 2002-12-24 | ||
| KR10-2003-0011016A KR100496266B1 (ko) | 2002-12-24 | 2003-02-21 | 발광 가능한 실리콘 나노점 박막 제조 장치 및 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE482474T1 true ATE482474T1 (de) | 2010-10-15 |
Family
ID=37349646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03029649T ATE482474T1 (de) | 2002-12-24 | 2003-12-22 | Verfahren zur herstellung eines nanopunkt- strukturierten siliziumfilms zur lichtemission |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR100496266B1 (de) |
| AT (1) | ATE482474T1 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100809243B1 (ko) * | 2006-04-27 | 2008-02-29 | 삼성전기주식회사 | 질화물막 제조방법 및 질화물 구조 |
| KR100857819B1 (ko) * | 2006-10-09 | 2008-09-10 | 서울시립대학교 산학협력단 | 발광소자 제조방법 |
| KR101642271B1 (ko) * | 2015-03-31 | 2016-07-25 | 주식회사 디씨티 | 도판트가 도핑된 실리콘 나노소재 제조방법 및 이의 국부적 도핑방법 |
-
2003
- 2003-02-21 KR KR10-2003-0011016A patent/KR100496266B1/ko not_active Expired - Fee Related
- 2003-12-22 AT AT03029649T patent/ATE482474T1/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100496266B1 (ko) | 2005-06-17 |
| KR20040057031A (ko) | 2004-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101512728B (zh) | 增加封装膜透光度的方法 | |
| EP1346085A4 (de) | Verfahren und vorrichtung zur herstellung von materialien auf m n-basis | |
| TW200608447A (en) | Method for manufacturing a quantum-dot element | |
| TW200741823A (en) | Semiconductor device manufacturing method and substrate processing apparatus | |
| EP0936284A3 (de) | Verfahren und Vorrichtung zur Herstellung von Dünnfilmen | |
| TW200517522A (en) | Chemical vapor deposition unit | |
| TW200609378A (en) | Device and method for high-throughput chemical vapor deposition | |
| WO2006007313A3 (en) | Improving water-barrier performance of an encapsulating film | |
| SG149680A1 (en) | Film formation apparatus and film formation method and cleaning method | |
| MY141175A (en) | Light emitting device, method of manufacturing the same, and thin film forming apparatus | |
| TW200737310A (en) | Epitaxial deposition process and apparatus | |
| WO2005087974A3 (en) | Cvd processes for the deposition of amorphous carbon films | |
| WO2003065424A3 (en) | Apparatus for cyclical deposition of thin films | |
| EP1343206A3 (de) | Elektrolumineszentes Gerät und deren Herstellungsverfahren | |
| WO2003095702A3 (en) | Method for curing low dielectric constant film by electron beam | |
| TW201341580A (zh) | 沉積包封膜之方法 | |
| ATE468618T1 (de) | Verfahren zur herstellung eines optischen gerätes | |
| FR2928939B1 (fr) | Procede de production de nanostructures sur un substrat d'oxyde metallique, procede de depot de couches minces sur un tel substrat, et un dispositf forme de couches minces | |
| DE60336920D1 (de) | Verfahren zur atomschichtabscheidung | |
| ATE427558T1 (de) | Atomschichtenabscheidungsverfahren und vorrichtung | |
| TW200609377A (en) | Method for depositing thin film and thin film deposition system having separate jet orifices for spraying purge gas | |
| TWI303667B (en) | Method and apparatus of depositing low temperature inorganic films on plastic substrates | |
| RU98119152A (ru) | Способ получения гомоэпитаксиальной алмазной тонкой пленки и устройство для его осуществления | |
| EP0727826A3 (de) | Herstellungsverfahren für einen dünnen Halbleiterfilm und Plasma-CVD-Gerät zur Verwendung in diesen Verfahren | |
| JP2006514161A5 (de) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |