ATE482474T1 - METHOD FOR PRODUCING A NANOPOINT STRUCTURED SILICON FILM FOR LIGHT EMISSION - Google Patents
METHOD FOR PRODUCING A NANOPOINT STRUCTURED SILICON FILM FOR LIGHT EMISSIONInfo
- Publication number
- ATE482474T1 ATE482474T1 AT03029649T AT03029649T ATE482474T1 AT E482474 T1 ATE482474 T1 AT E482474T1 AT 03029649 T AT03029649 T AT 03029649T AT 03029649 T AT03029649 T AT 03029649T AT E482474 T1 ATE482474 T1 AT E482474T1
- Authority
- AT
- Austria
- Prior art keywords
- thin film
- substrate
- shower head
- silicon nano
- chamber
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052710 silicon Inorganic materials 0.000 title abstract 4
- 239000010703 silicon Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 4
- 239000002096 quantum dot Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 239000011159 matrix material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE: An apparatus and method for manufacturing a silicon nano dot thin film capable of emitting light are provided to obtain the silicon nano dot thin film having a uniform doping concentration without damage by depositing an Si based matrix thin film using a PECVD(Plasma Enhanced Chemical Vapor Deposition) and simultaneously doping luminescent material in the thin film using a sputtering process. CONSTITUTION: An apparatus for manufacturing a silicon nano dot thin film capable of emitting light is provided with a chamber(10) having a gas supply line(1) and a gas exhaust line(6), and a shower head(2) connected with the gas supply line in the chamber. The apparatus further includes a stage(4) opposite to the shower head for loading a substrate(3) and a sputter gun(7) at one sidewall of the chamber toward the substrate. A matrix thin film is deposited on the substrate by using the plasma(9) between the shower head and substrate. At this time, luminescent material is doped in the thin film by using the sputter gun.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20020083758 | 2002-12-24 | ||
| KR10-2003-0011016A KR100496266B1 (en) | 2002-12-24 | 2003-02-21 | Apparatus and method for manufacturing silicon nanodot film capable of emitting light |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE482474T1 true ATE482474T1 (en) | 2010-10-15 |
Family
ID=37349646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03029649T ATE482474T1 (en) | 2002-12-24 | 2003-12-22 | METHOD FOR PRODUCING A NANOPOINT STRUCTURED SILICON FILM FOR LIGHT EMISSION |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR100496266B1 (en) |
| AT (1) | ATE482474T1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100809243B1 (en) * | 2006-04-27 | 2008-02-29 | 삼성전기주식회사 | Nitride film production method and nitride structure |
| KR100857819B1 (en) * | 2006-10-09 | 2008-09-10 | 서울시립대학교 산학협력단 | Method of manufacturing light emitting device |
| KR101642271B1 (en) * | 2015-03-31 | 2016-07-25 | 주식회사 디씨티 | Method for Manufacturing Dopant Doped Silicon Nano Material and Local Doping Method thereof |
-
2003
- 2003-02-21 KR KR10-2003-0011016A patent/KR100496266B1/en not_active Expired - Fee Related
- 2003-12-22 AT AT03029649T patent/ATE482474T1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100496266B1 (en) | 2005-06-17 |
| KR20040057031A (en) | 2004-07-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |