ATE482904T1 - Verfahren zur niedrigtemperaturversiegelung einer kavität unter vakuum oder kontrollierter atmosphäre - Google Patents

Verfahren zur niedrigtemperaturversiegelung einer kavität unter vakuum oder kontrollierter atmosphäre

Info

Publication number
ATE482904T1
ATE482904T1 AT07731525T AT07731525T ATE482904T1 AT E482904 T1 ATE482904 T1 AT E482904T1 AT 07731525 T AT07731525 T AT 07731525T AT 07731525 T AT07731525 T AT 07731525T AT E482904 T1 ATE482904 T1 AT E482904T1
Authority
AT
Austria
Prior art keywords
low temperature
under vacuum
controlled atmosphere
cavity under
temperature sealing
Prior art date
Application number
AT07731525T
Other languages
English (en)
Inventor
Bernard Andre
Agnes Arnaud
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE482904T1 publication Critical patent/ATE482904T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0181—Physical Vapour Deposition [PVD], i.e. evaporation, sputtering, ion plating or plasma assisted deposition, ion cluster beam technology
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0145—Hermetically sealing an opening in the lid

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Primary Cells (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
AT07731525T 2006-02-08 2007-01-25 Verfahren zur niedrigtemperaturversiegelung einer kavität unter vakuum oder kontrollierter atmosphäre ATE482904T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0650445A FR2897196B1 (fr) 2006-02-08 2006-02-08 Procede de scellement a basse temperature d'une cavite sous vide ou sous atmosphere controlee
PCT/FR2007/050697 WO2007090971A1 (fr) 2006-02-08 2007-01-25 Procédé de scellement à basse température d'une cavité sous vide ou sous atmosphère contrôlée

Publications (1)

Publication Number Publication Date
ATE482904T1 true ATE482904T1 (de) 2010-10-15

Family

ID=37188942

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07731525T ATE482904T1 (de) 2006-02-08 2007-01-25 Verfahren zur niedrigtemperaturversiegelung einer kavität unter vakuum oder kontrollierter atmosphäre

Country Status (6)

Country Link
US (1) US7842556B2 (de)
EP (1) EP1981805B1 (de)
AT (1) ATE482904T1 (de)
DE (1) DE602007009484D1 (de)
FR (1) FR2897196B1 (de)
WO (1) WO2007090971A1 (de)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4853669A (en) * 1985-04-26 1989-08-01 Wisconsin Alumni Research Foundation Sealed cavity semiconductor pressure transducers and method of producing the same
US7429495B2 (en) * 2002-08-07 2008-09-30 Chang-Feng Wan System and method of fabricating micro cavities
US7075160B2 (en) * 2003-06-04 2006-07-11 Robert Bosch Gmbh Microelectromechanical systems and devices having thin film encapsulated mechanical structures
US7081623B2 (en) * 2003-09-05 2006-07-25 Lucent Technologies Inc. Wafer-based ion traps
US7471445B2 (en) * 2005-11-29 2008-12-30 Spatial Photonics, Inc. Fast-response micro-mechanical devices

Also Published As

Publication number Publication date
EP1981805B1 (de) 2010-09-29
US20080268580A1 (en) 2008-10-30
EP1981805A1 (de) 2008-10-22
FR2897196B1 (fr) 2008-07-18
FR2897196A1 (fr) 2007-08-10
US7842556B2 (en) 2010-11-30
DE602007009484D1 (de) 2010-11-11
WO2007090971A1 (fr) 2007-08-16

Similar Documents

Publication Publication Date Title
SG10201802228YA (en) Selective growth of silicon nitride
ATE455369T1 (de) Verfahren und vorrichtung zur messtechnikintegration mit einer ätzbehandlung
DE602006014291D1 (de) Herstellungsverfahren für eine Membran und mit einer solchen Membran versehener Gegenstand
WO2012092301A3 (en) Method and apparatus for masking substrates for deposition
TW200802547A (en) Selective deposition
TW200705550A (en) A method for a large dimension plasma enhance atomic layer deposition cavity and an apparatus thereof
ATE542929T1 (de) Verfahren zur ablagerung anorganischer materialien in ausgewählten bereichen
ATE458839T1 (de) Verfahren für leicht zu reinigende substrate und artikel daraus
DE602009000259D1 (de) Verfahren zur Herstellung einer Funktionsschicht
WO2012118955A3 (en) Apparatus and process for atomic layer deposition
EP2463249A4 (de) Verfahren zur herstellung eines ultradünnen glassubstrats
WO2011065796A3 (ko) 안티 글레어 글래스 제조 방법
EP2707344A4 (de) Verfahren zur selektiven metallisierung der oberfläche eines keramiksubstrats, keramikprodukt sowie verwendung des keramikprodukts
EA201490034A1 (ru) Способ получения оконного стекла, содержащего пористый слой
EP2244280A4 (de) Verfahren zur behandlung einer oberfläche eines soi-substrats
WO2014072829A3 (en) Nanometer sized structures grown by pulsed laser deposition
EP3868863A4 (de) Zellkultursubstrat, verfahren zur herstellung eines zellkultursubstrats und verfahren zur herstellung von sphäroiden
SI2710168T1 (en) Article with a dlc coating and method for the application of the dlc coating
FI20105789L (fi) Termisesti ruiskutettu täysin amorfinen oksidipinnoite
WO2010012966A3 (fr) Procede et dispositif d'encapsulation de microstructures
EP2216428A4 (de) VERFAHREN ZUR HERSTELLUNG EINES SiC-MONOKRISTALLSUBSTRATS UND ANHAND DIESES VERFAHRENS HERGESTELLTES SiC-MONOKRISTALLSUBSTRAT
FI20115321A0 (fi) Menetelmä yhden tai useamman monikiteisen piikerroksen kerrrostamiseksi substraatille
EP4270496A4 (de) Lichtemittierende vorrichtung, lichtemittierendes substrat und verfahren zur herstellung der lichtemittierenden vorrichtung
IN2014DN03101A (de)
DE502006004463D1 (de) Vorrichtung und verfahren zur kontinuierlichen gasphasenabscheidung unter atmosphärendruck und deren verwendung

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties