ATE488027T1 - Elektrolumineszente vorrichtung mit lichtauskoppelung - Google Patents

Elektrolumineszente vorrichtung mit lichtauskoppelung

Info

Publication number
ATE488027T1
ATE488027T1 AT02726265T AT02726265T ATE488027T1 AT E488027 T1 ATE488027 T1 AT E488027T1 AT 02726265 T AT02726265 T AT 02726265T AT 02726265 T AT02726265 T AT 02726265T AT E488027 T1 ATE488027 T1 AT E488027T1
Authority
AT
Austria
Prior art keywords
mirrors
photons
electroluminescent device
converting
light extraction
Prior art date
Application number
AT02726265T
Other languages
English (en)
Inventor
Maxime Rattier
Henri Benisty
Claude Weisbuch
Original Assignee
Centre Nat Rech Scient
Ecole Polytech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient, Ecole Polytech filed Critical Centre Nat Rech Scient
Application granted granted Critical
Publication of ATE488027T1 publication Critical patent/ATE488027T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Optical Integrated Circuits (AREA)
  • Radiation-Therapy Devices (AREA)
  • Control Of El Displays (AREA)
AT02726265T 2001-04-26 2002-04-18 Elektrolumineszente vorrichtung mit lichtauskoppelung ATE488027T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0105652A FR2824228B1 (fr) 2001-04-26 2001-04-26 Dispositif electroluminescent a extracteur de lumiere
PCT/FR2002/001341 WO2002089218A2 (fr) 2001-04-26 2002-04-18 Dispositif electroluminescent a extracteur de lumiere

Publications (1)

Publication Number Publication Date
ATE488027T1 true ATE488027T1 (de) 2010-11-15

Family

ID=8862739

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02726265T ATE488027T1 (de) 2001-04-26 2002-04-18 Elektrolumineszente vorrichtung mit lichtauskoppelung

Country Status (9)

Country Link
US (1) US6987288B2 (de)
EP (1) EP1382074B1 (de)
JP (1) JP4163004B2 (de)
AT (1) ATE488027T1 (de)
AU (1) AU2002256752A1 (de)
CA (1) CA2444338C (de)
DE (1) DE60238245D1 (de)
FR (1) FR2824228B1 (de)
WO (1) WO2002089218A2 (de)

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JP3956918B2 (ja) 2002-10-03 2007-08-08 日亜化学工業株式会社 発光ダイオード
JP2004172506A (ja) 2002-11-22 2004-06-17 Sony Corp 半導体レーザ素子
JP4610863B2 (ja) * 2003-03-19 2011-01-12 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー フォトニック結晶構造を使用するｌｅｄ効率の改良
JP4263121B2 (ja) * 2003-03-27 2009-05-13 三洋電機株式会社 発光素子および照明装置
US7078735B2 (en) 2003-03-27 2006-07-18 Sanyo Electric Co., Ltd. Light-emitting device and illuminator
US7262550B2 (en) * 2003-04-15 2007-08-28 Luminus Devices, Inc. Light emitting diode utilizing a physical pattern
US6831302B2 (en) * 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US7098589B2 (en) * 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US7166871B2 (en) * 2003-04-15 2007-01-23 Luminus Devices, Inc. Light emitting systems
US7083993B2 (en) * 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US7250635B2 (en) * 2004-02-06 2007-07-31 Dicon Fiberoptics, Inc. Light emitting system with high extraction efficency
US20050173714A1 (en) * 2004-02-06 2005-08-11 Ho-Shang Lee Lighting system with high and improved extraction efficiency
US7582910B2 (en) * 2005-02-28 2009-09-01 The Regents Of The University Of California High efficiency light emitting diode (LED) with optimized photonic crystal extractor
US7442964B2 (en) 2004-08-04 2008-10-28 Philips Lumileds Lighting Company, Llc Photonic crystal light emitting device with multiple lattices
JP2006059864A (ja) * 2004-08-17 2006-03-02 Yokohama National Univ 発光素子
US7509012B2 (en) * 2004-09-22 2009-03-24 Luxtaltek Corporation Light emitting diode structures
JP4410123B2 (ja) 2005-02-10 2010-02-03 株式会社東芝 有機ｅｌディスプレイ
JP2008311687A (ja) * 2005-03-28 2008-12-25 Stanley Electric Co Ltd 自発光デバイス
KR100706796B1 (ko) * 2005-08-19 2007-04-12 삼성전자주식회사 질화물계 탑에미트형 발광소자 및 그 제조 방법
JP4843284B2 (ja) * 2005-09-22 2011-12-21 パナソニック電工株式会社 半導体発光素子およびその製造方法
JP2007088273A (ja) * 2005-09-22 2007-04-05 Matsushita Electric Works Ltd 半導体発光素子およびその製造方法
US7717343B2 (en) * 2006-01-12 2010-05-18 Hand Held Products, Inc. High-efficiency illumination in data collection devices
DE102006017573A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung
KR100736623B1 (ko) 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
WO2007148866A1 (en) 2006-06-23 2007-12-27 Lg Electronics Inc. Light emitting diode having vertical topology and method of making the same
JP5168890B2 (ja) * 2006-11-24 2013-03-27 日亜化学工業株式会社 半導体発光素子及び半導体発光素子の製造方法
US8941566B2 (en) * 2007-03-08 2015-01-27 3M Innovative Properties Company Array of luminescent elements
JP5242975B2 (ja) * 2007-09-03 2013-07-24 独立行政法人科学技術振興機構 回折格子型発光ダイオード
JP2009170508A (ja) * 2008-01-11 2009-07-30 Furukawa Electric Co Ltd:The 面発光半導体レーザ及びその製造方法
JP2011523212A (ja) * 2008-06-05 2011-08-04 スリーエム イノベイティブ プロパティズ カンパニー 半導体波長変換器が接合された発光ダイオード
EP2308103A4 (de) * 2008-06-26 2014-04-30 3M Innovative Properties Co Lichtumwandlungskonstruktion
EP2308101A4 (de) * 2008-06-26 2014-04-30 3M Innovative Properties Co Halbleiter-lichtumwandlungskonstruktion
US8324000B2 (en) * 2008-06-26 2012-12-04 3M Innovative Properties Company Method of fabricating light extractor
US20110101402A1 (en) * 2008-06-26 2011-05-05 Jun-Ying Zhang Semiconductor light converting construction
KR20100030472A (ko) * 2008-09-10 2010-03-18 삼성전자주식회사 발광 소자 및 발광 장치의 제조 방법, 상기 방법을 이용하여 제조한 발광 소자 및 발광 장치
EP2460191A2 (de) 2009-07-30 2012-06-06 3M Innovative Properties Company Gepixelte led
JP2011187616A (ja) * 2010-03-08 2011-09-22 Toshiba Corp 半導体発光素子およびその製造方法
DE102014110069A1 (de) * 2014-07-17 2016-01-21 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Strukturierungsmaske und einer Oberflächenstrukturierung
WO2017175201A2 (en) * 2016-04-08 2017-10-12 Novagan Low etendue high brightness light emitting devices
FR3059788B1 (fr) 2016-12-02 2019-01-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diode electroluminescente a extraction augmentee
FR3059787B1 (fr) * 2016-12-02 2019-01-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diode electroluminescente a extraction augmentee
CN117316564B (zh) * 2023-09-26 2025-04-04 南京大学 一种CoMnSi基磁致伸缩复合材料及其制备方法
CN118352450A (zh) * 2024-04-03 2024-07-16 江苏宜兴德融科技有限公司 一种红光led结构及其制备方法

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US5405710A (en) 1993-11-22 1995-04-11 At&T Corp. Article comprising microcavity light sources
US5955749A (en) * 1996-12-02 1999-09-21 Massachusetts Institute Of Technology Light emitting device utilizing a periodic dielectric structure
DK1371120T3 (da) * 2001-03-09 2013-07-22 Alight Photonics Aps Bølgetypekontrol ved anvendelse af transversal båndgabsstruktur i vcsels

Also Published As

Publication number Publication date
EP1382074B1 (de) 2010-11-10
FR2824228B1 (fr) 2003-08-01
US20040141333A1 (en) 2004-07-22
FR2824228A1 (fr) 2002-10-31
AU2002256752A1 (en) 2002-11-11
CA2444338C (fr) 2012-10-30
DE60238245D1 (de) 2010-12-23
CA2444338A1 (fr) 2002-11-07
US6987288B2 (en) 2006-01-17
JP2004521509A (ja) 2004-07-15
WO2002089218A3 (fr) 2003-01-09
JP4163004B2 (ja) 2008-10-08
WO2002089218A2 (fr) 2002-11-07
EP1382074A2 (de) 2004-01-21

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