ATE491668T1 - Metallurgisches silizium hoher reinheit und verfahren zu seiner herstellung - Google Patents

Metallurgisches silizium hoher reinheit und verfahren zu seiner herstellung

Info

Publication number
ATE491668T1
ATE491668T1 AT02767590T AT02767590T ATE491668T1 AT E491668 T1 ATE491668 T1 AT E491668T1 AT 02767590 T AT02767590 T AT 02767590T AT 02767590 T AT02767590 T AT 02767590T AT E491668 T1 ATE491668 T1 AT E491668T1
Authority
AT
Austria
Prior art keywords
refining
production
high purity
silicon
metallurgical silicon
Prior art date
Application number
AT02767590T
Other languages
English (en)
Inventor
Gerard Baluais
Yves Caratini
Yves Delannoy
Christian Trassy
Original Assignee
Ferropem
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferropem, Centre Nat Rech Scient filed Critical Ferropem
Application granted granted Critical
Publication of ATE491668T1 publication Critical patent/ATE491668T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Treatment Of Steel In Its Molten State (AREA)
AT02767590T 2001-07-23 2002-07-22 Metallurgisches silizium hoher reinheit und verfahren zu seiner herstellung ATE491668T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0109788A FR2827592B1 (fr) 2001-07-23 2001-07-23 Silicium metallurgique de haute purete et procede d'elaboration
PCT/FR2002/002602 WO2003014019A1 (fr) 2001-07-23 2002-07-22 Silicium metallurgique de haute purete et procede d'elaboration

Publications (1)

Publication Number Publication Date
ATE491668T1 true ATE491668T1 (de) 2011-01-15

Family

ID=8865792

Family Applications (2)

Application Number Title Priority Date Filing Date
AT02767590T ATE491668T1 (de) 2001-07-23 2002-07-22 Metallurgisches silizium hoher reinheit und verfahren zu seiner herstellung
AT02767591T ATE382581T1 (de) 2001-07-23 2002-07-22 Metallurgisches silizium mittlererer reinheit und verfahren zu seiner herstellung

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT02767591T ATE382581T1 (de) 2001-07-23 2002-07-22 Metallurgisches silizium mittlererer reinheit und verfahren zu seiner herstellung

Country Status (12)

Country Link
US (2) US7404941B2 (de)
EP (2) EP1409406B1 (de)
JP (2) JP4410847B2 (de)
CN (2) CN1295146C (de)
AT (2) ATE491668T1 (de)
BR (2) BR0211195B1 (de)
DE (2) DE60224394T2 (de)
ES (2) ES2298390T3 (de)
FR (1) FR2827592B1 (de)
NO (2) NO335984B1 (de)
WO (2) WO2003010090A1 (de)
ZA (2) ZA200400276B (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO333319B1 (no) * 2003-12-29 2013-05-06 Elkem As Silisiummateriale for fremstilling av solceller
FR2869028B1 (fr) * 2004-04-20 2006-07-07 Efd Induction Sa Sa Procede et installation de fabrication de blocs d'un materiau semiconducteur
JP4749730B2 (ja) * 2005-02-09 2011-08-17 新日鉄マテリアルズ株式会社 Ｓｉの精錬方法
KR101450346B1 (ko) * 2006-03-15 2014-10-14 알이에스씨 인베스트먼츠 엘엘씨 태양 전지 및 다른 용도를 위한 규소 제조 방법
BRPI0710313A2 (pt) * 2006-04-04 2011-08-09 6N Silicon Inc método para a purificação de silìcio
US7682585B2 (en) * 2006-04-25 2010-03-23 The Arizona Board Of Regents On Behalf Of The University Of Arizona Silicon refining process
DE102006034061A1 (de) * 2006-07-20 2008-01-24 REV Renewable Energy Ventures, Inc., Aloha Polysilanverarbeitung und Verwendung
EP2058279A4 (de) * 2006-08-31 2012-01-25 Mitsubishi Materials Corp Metallisches silicium und herstellungsverfahren dafür
CN101511731B (zh) * 2006-09-14 2012-02-22 希利贝坎库公司 用于提纯低级硅材料的方法和装置
EP2072464A4 (de) * 2006-09-29 2010-09-01 Shinetsu Chemical Co Verfahren zur reinigung von silicium, silicium und solarzelle
FR2908125B1 (fr) 2006-11-02 2009-11-20 Commissariat Energie Atomique Procede de purification de silicium metallurgique par solidification dirigee
CN100460320C (zh) * 2007-03-08 2009-02-11 陈应天 使用自旋仰角跟踪的太阳炉对材料进行真空提纯的方法
KR20100022516A (ko) * 2007-06-08 2010-03-02 신에쓰 가가꾸 고교 가부시끼가이샤 금속 규소의 응고 방법
US20080314446A1 (en) * 2007-06-25 2008-12-25 General Electric Company Processes for the preparation of solar-grade silicon and photovoltaic cells
US20080314445A1 (en) * 2007-06-25 2008-12-25 General Electric Company Method for the preparation of high purity silicon
JP4265697B2 (ja) * 2007-06-26 2009-05-20 パナソニック株式会社 金属シリコンの精製方法とシリコン塊の製造方法
US8047288B2 (en) 2007-07-18 2011-11-01 Oxane Materials, Inc. Proppants with carbide and/or nitride phases
EP2212249B1 (de) * 2007-09-13 2015-01-14 Silicio Ferrosolar, S.L.U. Verfahren zur herstellung von mittel- und hochreinem silicium aus metallurgischem silicium
JP5400782B2 (ja) 2007-10-03 2014-01-29 シリコア マテリアルズ インコーポレイテッド シリコン結晶を得るためのシリコン粉末の処理方法
CN101131371B (zh) * 2007-10-08 2010-06-02 苏州阿特斯阳光电力科技有限公司 一种精炼冶金硅的杂质含量检测分析方法
US20090208770A1 (en) * 2008-02-14 2009-08-20 Ralf Jonczyk Semiconductor sheets and methods for fabricating the same
FR2928641B1 (fr) * 2008-03-14 2010-03-26 Centre Nat Rech Scient Procede de purification de silicium pour applications photovoltaiques
US20090280336A1 (en) * 2008-05-08 2009-11-12 Ralf Jonczyk Semiconductor sheets and methods of fabricating the same
ITMI20081085A1 (it) * 2008-06-16 2009-12-17 N E D Silicon S P A Metodo per la preparazione di silicio di grado metallurgico di elevata purezza.
US8404016B2 (en) * 2008-08-01 2013-03-26 Ulvac, Inc. Method for refining metal
US8409319B2 (en) * 2008-08-12 2013-04-02 Ulvac, Inc. Silicon purification method
US20100310445A1 (en) * 2009-04-29 2010-12-09 Calisolar, Inc. Process Control For UMG-Si Material Purification
US8562932B2 (en) 2009-08-21 2013-10-22 Silicor Materials Inc. Method of purifying silicon utilizing cascading process
DE102009056731A1 (de) 2009-12-04 2011-06-09 Rev Renewable Energy Ventures, Inc. Halogenierte Polysilane und Polygermane
CN101974780A (zh) * 2010-07-28 2011-02-16 常州天合光能有限公司 多晶铸锭晶体生长工艺
JP2012036043A (ja) * 2010-08-09 2012-02-23 Sumco Corp シリコンインゴットの製造装置および製造方法
CN102259859B (zh) * 2011-06-01 2012-12-12 宁夏银星多晶硅有限责任公司 一种低硼低磷冶金硅的生产工艺
ITRM20110426A1 (it) * 2011-08-08 2013-02-09 N E D Silicon S P A Metodo perfezionato per la preparazione di silicio di grado metallurgico ad alta purezza, in particolare per uso nel campo fotovoltaico.
TWI627131B (zh) * 2012-02-01 2018-06-21 美商希利柯爾材料股份有限公司 矽純化之模具及方法
KR101372524B1 (ko) 2012-02-21 2014-03-20 (주)리뉴에너지 일체식 아크 환원 및 슬래그 정련 장치
CN102627394B (zh) * 2012-04-02 2014-03-05 锦州新世纪多晶硅材料有限公司 一种采用冶金法降低金属硅中硼杂质含量的方法
JP5833256B2 (ja) * 2012-12-10 2015-12-16 昭和電工株式会社 ケイ素含有アルミニウム合金鋳塊の製造方法
US11267714B2 (en) * 2015-08-07 2022-03-08 Hpq-Silicon Resources Inc. Silica to high purity silicon production process
US20220212937A1 (en) * 2019-04-30 2022-07-07 Wacker Chemie Ag Method for refining crude silicon melts using a particulate mediator
CN115465865B (zh) * 2022-08-11 2023-08-04 商南中剑实业有限责任公司 一种同步去除工业硅中硼杂质和磷杂质的装置及其方法
FR3146672B1 (fr) * 2023-03-15 2025-09-26 Hpq Silicium Inc Appareil et procede de production de silicium de purete 3n ou superieure par purification d’un silicium de purete 2n

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
LU60094A1 (de) * 1969-12-24 1971-08-17
US4298423A (en) * 1976-12-16 1981-11-03 Semix Incorporated Method of purifying silicon
US4193975A (en) * 1977-11-21 1980-03-18 Union Carbide Corporation Process for the production of improved refined metallurgical silicon
JPS5913444B2 (ja) * 1977-11-21 1984-03-29 ユニオン・カ−バイド・コ−ポレ−シヨン 精製された金属シリコン製造方法
CA1147698A (en) * 1980-10-15 1983-06-07 Universite De Sherbrooke Purification of metallurgical grade silicon
DE3215981A1 (de) * 1982-04-29 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen hochreiner ausgangsmaterialien fuer die fertigung von silizium fuer solarzellen nach dem carbothermischen reduktionsverfahren
DE3439550A1 (de) * 1984-10-29 1986-04-30 Siemens Ag Verfahren zum herstellen von silizium fuer solarzellen
FR2585690B1 (fr) 1985-07-31 1987-09-25 Rhone Poulenc Spec Chim Procede de purification sous plasma de silicium divise
JPH0753569B2 (ja) * 1986-08-07 1995-06-07 昭和アルミニウム株式会社 ケイ素の精製方法
DE3635064A1 (de) * 1986-10-15 1988-04-21 Bayer Ag Verfahren zur raffination von silicium und derart gereinigtes silicium
US4854968A (en) * 1986-12-25 1989-08-08 Showa Aluminum Corporation Method of preparing high-purity metal and rotary cooling member for use in apparatus therefor
DE3727646A1 (de) * 1987-08-19 1989-03-02 Bayer Ag Verfahren zur kontinuierlichen raffination von silicium
JP3205352B2 (ja) * 1990-05-30 2001-09-04 川崎製鉄株式会社 シリコン精製方法及び装置
JP3000109B2 (ja) * 1990-09-20 2000-01-17 株式会社住友シチックス尼崎 高純度シリコン鋳塊の製造方法
JPH04193706A (ja) * 1990-11-28 1992-07-13 Kawasaki Steel Corp シリコンの精製方法
JPH05262512A (ja) * 1992-03-17 1993-10-12 Kawasaki Steel Corp シリコンの精製方法
FR2729131B1 (fr) 1995-01-09 1997-02-14 Pechiney Electrometallurgie Silicium et ferrosilicium metallurgique a basse teneur en oxygene
FR2746785B1 (fr) * 1996-04-02 1998-05-22 Pechiney Electrometallurgie Silicium metallurgique a structure controlee destine a la synthese des halogenosilanes
CA2232777C (en) * 1997-03-24 2001-05-15 Hiroyuki Baba Method for producing silicon for use in solar cells
FR2772741B1 (fr) * 1997-12-19 2000-03-10 Centre Nat Rech Scient Procede et installation d'affinage du silicium
DE19919832A1 (de) * 1999-04-30 2000-11-09 Bosch Gmbh Robert Verfahren zum anisotropen Plasmaätzen von Halbleitern
AU2001285142A1 (en) * 2000-08-21 2002-03-04 Astropower Inc. Method and apparatus for purifying silicon
US7588745B2 (en) * 2004-04-13 2009-09-15 Si Options, Llc Silicon-containing products

Also Published As

Publication number Publication date
EP1409405B1 (de) 2010-12-15
NO335984B1 (no) 2015-04-13
ZA200400276B (en) 2005-03-30
CN1543435A (zh) 2004-11-03
DE60238615D1 (de) 2011-01-27
NO20040284L (no) 2004-03-23
CN1295146C (zh) 2007-01-17
DE60224394T2 (de) 2008-12-18
ES2357501T3 (es) 2011-04-27
WO2003014019A1 (fr) 2003-02-20
EP1409406A1 (de) 2004-04-21
NO20040285L (no) 2004-03-23
US20050074388A1 (en) 2005-04-07
US20050053539A1 (en) 2005-03-10
EP1409406B1 (de) 2008-01-02
BR0211195A (pt) 2004-08-10
BR0211193A (pt) 2004-08-10
ES2298390T3 (es) 2008-05-16
CN1543436A (zh) 2004-11-03
FR2827592A1 (fr) 2003-01-24
EP1409405A1 (de) 2004-04-21
JP2004537491A (ja) 2004-12-16
FR2827592B1 (fr) 2003-08-22
ATE382581T1 (de) 2008-01-15
WO2003010090A1 (fr) 2003-02-06
US7404941B2 (en) 2008-07-29
JP4523274B2 (ja) 2010-08-11
NO335985B1 (no) 2015-04-13
US7858063B2 (en) 2010-12-28
DE60224394D1 (de) 2008-02-14
JP2004535354A (ja) 2004-11-25
BR0211193B1 (pt) 2011-02-08
CN1295147C (zh) 2007-01-17
JP4410847B2 (ja) 2010-02-03
ZA200400346B (en) 2005-03-30
BR0211195B1 (pt) 2010-08-10

Similar Documents

Publication Publication Date Title
ATE491668T1 (de) Metallurgisches silizium hoher reinheit und verfahren zu seiner herstellung
ATE383448T1 (de) Verfahren zur herstellung von blöcken aus nickelbasislegiuerng mit grossem durchmesser
JPWO1998016466A1 (ja) 多結晶シリコンの製造方法及び装置、並びに太陽電池用シリコン基板の製造方法
CN110616296B (zh) 一种弧形连铸生产高碳高合金莱氏体钢的方法
CN1221470C (zh) 高纯度硅的生产方法
JPH04193706A (ja) シリコンの精製方法
JPH05262512A (ja) シリコンの精製方法
US9352970B2 (en) Method for producing silicon for solar cells by metallurgical refining process
BR0012189A (pt) Processo de produção de ferro fundido lìquido
JPH02267110A (ja) 金属シリコン脱炭用ランスおよび脱炭方法
CN110408792B (zh) 保护气氛电渣重熔高氮钢的方法
KR101210354B1 (ko) 래들 퍼니스에 의한 저탄소 실리콘 망간의 제조 방법
CN1241270C (zh) 生产太阳能电池用高纯度硅的方法
JPS6141712A (ja) 銑鉄、鋼、他の金属、及び金属合金から汚染元素を除去する方法
TW200730637A (en) Hydrogen storage alloy and producing method thereof
JPS6352753A (ja) 加熱鋳型連続鋳造法
JPH05147918A (ja) 金属シリコンの精製方法
JP3149556B2 (ja) 精密鋳造用メルティングストックの製造方法とその装置
KR930006166A (ko) 무산소동(無酸素銅)의 제조방법
JPS5944379B2 (ja) 低炭素シリコクロムの製造方法
JPS642776A (en) Production of aluminum ingot having extremely low hydrogen concentration
Chernyj et al. Manufacture and repair of components of technical duty made of platinum and platinum alloys
JPS62214120A (ja) Ａｌキルド鋼の溶製方法
JPH03226514A (ja) 精錬工程における介在物形態制御方法
UA32339A (uk) Спосіб очищення благородних металів і їх сплавів

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties