ATE491668T1 - Metallurgisches silizium hoher reinheit und verfahren zu seiner herstellung - Google Patents

Metallurgisches silizium hoher reinheit und verfahren zu seiner herstellung

Info

Publication number
ATE491668T1
ATE491668T1 AT02767590T AT02767590T ATE491668T1 AT E491668 T1 ATE491668 T1 AT E491668T1 AT 02767590 T AT02767590 T AT 02767590T AT 02767590 T AT02767590 T AT 02767590T AT E491668 T1 ATE491668 T1 AT E491668T1
Authority
AT
Austria
Prior art keywords
refining
production
high purity
silicon
metallurgical silicon
Prior art date
Application number
AT02767590T
Other languages
English (en)
Inventor
Gerard Baluais
Yves Caratini
Yves Delannoy
Christian Trassy
Original Assignee
Ferropem
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferropem, Centre Nat Rech Scient filed Critical Ferropem
Application granted granted Critical
Publication of ATE491668T1 publication Critical patent/ATE491668T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Treatment Of Steel In Its Molten State (AREA)
AT02767590T 2001-07-23 2002-07-22 Metallurgisches silizium hoher reinheit und verfahren zu seiner herstellung ATE491668T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0109788A FR2827592B1 (fr) 2001-07-23 2001-07-23 Silicium metallurgique de haute purete et procede d'elaboration
PCT/FR2002/002602 WO2003014019A1 (fr) 2001-07-23 2002-07-22 Silicium metallurgique de haute purete et procede d'elaboration

Publications (1)

Publication Number Publication Date
ATE491668T1 true ATE491668T1 (de) 2011-01-15

Family

ID=8865792

Family Applications (2)

Application Number Title Priority Date Filing Date
AT02767590T ATE491668T1 (de) 2001-07-23 2002-07-22 Metallurgisches silizium hoher reinheit und verfahren zu seiner herstellung
AT02767591T ATE382581T1 (de) 2001-07-23 2002-07-22 Metallurgisches silizium mittlererer reinheit und verfahren zu seiner herstellung

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT02767591T ATE382581T1 (de) 2001-07-23 2002-07-22 Metallurgisches silizium mittlererer reinheit und verfahren zu seiner herstellung

Country Status (12)

Country Link
US (2) US7858063B2 (de)
EP (2) EP1409405B1 (de)
JP (2) JP4523274B2 (de)
CN (2) CN1295147C (de)
AT (2) ATE491668T1 (de)
BR (2) BR0211193B1 (de)
DE (2) DE60224394T2 (de)
ES (2) ES2357501T3 (de)
FR (1) FR2827592B1 (de)
NO (2) NO335984B1 (de)
WO (2) WO2003010090A1 (de)
ZA (2) ZA200400276B (de)

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KR101061530B1 (ko) * 2006-04-04 2011-09-01 6엔 실리콘 아이엔씨. 실리콘의 정제 방법
US7682585B2 (en) * 2006-04-25 2010-03-23 The Arizona Board Of Regents On Behalf Of The University Of Arizona Silicon refining process
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US20080314445A1 (en) * 2007-06-25 2008-12-25 General Electric Company Method for the preparation of high purity silicon
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MY143807A (en) * 2007-09-13 2011-07-15 Silicium Becancour Inc Process for the production of medium and high purity silicon from metallurgical grade silicon
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FR2928641B1 (fr) * 2008-03-14 2010-03-26 Centre Nat Rech Scient Procede de purification de silicium pour applications photovoltaiques
US20090280336A1 (en) * 2008-05-08 2009-11-12 Ralf Jonczyk Semiconductor sheets and methods of fabricating the same
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JP5357158B2 (ja) * 2008-08-01 2013-12-04 株式会社アルバック シリコンの精製方法
CN102112394B (zh) 2008-08-12 2013-05-15 株式会社爱发科 硅精制方法
CN102498062A (zh) * 2009-04-29 2012-06-13 卡利太阳能有限公司 升级冶金级硅材料提纯的过程控制
US8562932B2 (en) 2009-08-21 2013-10-22 Silicor Materials Inc. Method of purifying silicon utilizing cascading process
DE102009056731A1 (de) 2009-12-04 2011-06-09 Rev Renewable Energy Ventures, Inc. Halogenierte Polysilane und Polygermane
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ITRM20110426A1 (it) * 2011-08-08 2013-02-09 N E D Silicon S P A Metodo perfezionato per la preparazione di silicio di grado metallurgico ad alta purezza, in particolare per uso nel campo fotovoltaico.
TWI627131B (zh) * 2012-02-01 2018-06-21 美商希利柯爾材料股份有限公司 矽純化之模具及方法
KR101372524B1 (ko) 2012-02-21 2014-03-20 (주)리뉴에너지 일체식 아크 환원 및 슬래그 정련 장치
CN102627394B (zh) * 2012-04-02 2014-03-05 锦州新世纪多晶硅材料有限公司 一种采用冶金法降低金属硅中硼杂质含量的方法
JP5833256B2 (ja) * 2012-12-10 2015-12-16 昭和電工株式会社 ケイ素含有アルミニウム合金鋳塊の製造方法
KR20240090634A (ko) * 2015-08-07 2024-06-21 파이로제네시스 캐나다 인코퍼레이티드 실리카로부터 고순도 실리콘을 제조하는 방법
WO2020221439A1 (de) * 2019-04-30 2020-11-05 Wacker Chemie Ag Verfahren zur raffination von rohsilicium-schmelzen mittels eines partikulären mediators
CN115465865B (zh) * 2022-08-11 2023-08-04 商南中剑实业有限责任公司 一种同步去除工业硅中硼杂质和磷杂质的装置及其方法
FR3146672B1 (fr) * 2023-03-15 2025-09-26 Hpq Silicium Inc Appareil et procede de production de silicium de purete 3n ou superieure par purification d’un silicium de purete 2n

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Also Published As

Publication number Publication date
US7404941B2 (en) 2008-07-29
WO2003014019A1 (fr) 2003-02-20
DE60224394T2 (de) 2008-12-18
JP2004535354A (ja) 2004-11-25
FR2827592B1 (fr) 2003-08-22
ES2298390T3 (es) 2008-05-16
JP4523274B2 (ja) 2010-08-11
CN1543436A (zh) 2004-11-03
BR0211195A (pt) 2004-08-10
ES2357501T3 (es) 2011-04-27
JP2004537491A (ja) 2004-12-16
CN1543435A (zh) 2004-11-03
EP1409405A1 (de) 2004-04-21
US20050074388A1 (en) 2005-04-07
ZA200400346B (en) 2005-03-30
NO335984B1 (no) 2015-04-13
EP1409406A1 (de) 2004-04-21
US20050053539A1 (en) 2005-03-10
ATE382581T1 (de) 2008-01-15
NO335985B1 (no) 2015-04-13
CN1295147C (zh) 2007-01-17
BR0211193B1 (pt) 2011-02-08
US7858063B2 (en) 2010-12-28
NO20040285L (no) 2004-03-23
BR0211193A (pt) 2004-08-10
JP4410847B2 (ja) 2010-02-03
DE60238615D1 (de) 2011-01-27
WO2003010090A1 (fr) 2003-02-06
EP1409405B1 (de) 2010-12-15
ZA200400276B (en) 2005-03-30
BR0211195B1 (pt) 2010-08-10
EP1409406B1 (de) 2008-01-02
DE60224394D1 (de) 2008-02-14
CN1295146C (zh) 2007-01-17
NO20040284L (no) 2004-03-23
FR2827592A1 (fr) 2003-01-24

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