ATE491828T1 - Spinell-gegenstände - Google Patents

Spinell-gegenstände

Info

Publication number
ATE491828T1
ATE491828T1 AT04788859T AT04788859T ATE491828T1 AT E491828 T1 ATE491828 T1 AT E491828T1 AT 04788859 T AT04788859 T AT 04788859T AT 04788859 T AT04788859 T AT 04788859T AT E491828 T1 ATE491828 T1 AT E491828T1
Authority
AT
Austria
Prior art keywords
spinel
items
wafers
articles
substrates
Prior art date
Application number
AT04788859T
Other languages
English (en)
Inventor
Milan Kokta
Jennifer Stone-Sundberg
Jeffrey Cooke
Ronald Ackerman
Hung Ong
Emily Corrigan
Original Assignee
Saint Gobain Ceramics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Ceramics filed Critical Saint Gobain Ceramics
Priority claimed from PCT/US2004/030803 external-priority patent/WO2005031047A1/en
Application granted granted Critical
Publication of ATE491828T1 publication Critical patent/ATE491828T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/24—Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. ortho ferrites
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Saccharide Compounds (AREA)
  • Catalysts (AREA)
  • Compositions Of Oxide Ceramics (AREA)
AT04788859T 2003-09-23 2004-09-17 Spinell-gegenstände ATE491828T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/669,141 US7045223B2 (en) 2003-09-23 2003-09-23 Spinel articles and methods for forming same
US10/802,160 US20050061229A1 (en) 2003-09-23 2004-03-17 Optical spinel articles and methods for forming same
PCT/US2004/030803 WO2005031047A1 (en) 2003-09-23 2004-09-17 Spinel articles and methods for forming same

Publications (1)

Publication Number Publication Date
ATE491828T1 true ATE491828T1 (de) 2011-01-15

Family

ID=34313662

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04788859T ATE491828T1 (de) 2003-09-23 2004-09-17 Spinell-gegenstände

Country Status (5)

Country Link
US (2) US7045223B2 (de)
JP (1) JP5562905B2 (de)
AT (1) ATE491828T1 (de)
DE (1) DE602004030592D1 (de)
IL (1) IL174350A0 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7326477B2 (en) * 2003-09-23 2008-02-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel boules, wafers, and methods for fabricating same
US20050061230A1 (en) * 2003-09-23 2005-03-24 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
US7045223B2 (en) * 2003-09-23 2006-05-16 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
WO2006047127A1 (en) * 2004-10-21 2006-05-04 Saint-Gobain Ceramics & Plastics, Inc. Optical lens elements, semiconductor lithographic patterning apparatus, and methods for processing semiconductor devices
JP4525353B2 (ja) * 2005-01-07 2010-08-18 住友電気工業株式会社 Ｉｉｉ族窒化物基板の製造方法
US7919815B1 (en) * 2005-02-24 2011-04-05 Saint-Gobain Ceramics & Plastics, Inc. Spinel wafers and methods of preparation
US20090137097A1 (en) * 2007-11-26 2009-05-28 United Microelectronics Corp. Method for dicing wafer
US8207539B2 (en) 2009-06-09 2012-06-26 Epistar Corporation Light-emitting device having a thinned structure and the manufacturing method thereof
DE102011080378A1 (de) * 2011-08-03 2013-02-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Transparente Komposit-Scheibe für Sicherheitsanwendungen

Family Cites Families (122)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544261C3 (de) 1965-03-30 1975-12-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum epitaktischen Abscheiden einer einkristallinen Schicht eines nach dem Diamant- oder nach Zinkblendegitter kristallisierenden Halbleitermaterials
FR1471976A (fr) 1965-03-30 1967-03-03 Siemens Ag Procédé pour déposer épitaxialement une substance semi-conductrice cristallisantdans le réseau du diamant ou dans celui de la blende
US3885978A (en) 1968-05-31 1975-05-27 Matsushita Electric Works Ltd Inorganic coating composition
FR1597033A (de) 1968-06-19 1970-06-22
DE1769635A1 (de) 1968-06-20 1972-03-30 Siemens Ag Duenne Halbleiter-Aufwachsschicht auf tonerdearmen,tiegelgezogenem Magnesium-Aluminium-Spinell-Einkristall,sowie Verfahren zur Herstellung der Schicht und zur Herstellung der Einkristalle
US3658586A (en) 1969-04-11 1972-04-25 Rca Corp Epitaxial silicon on hydrogen magnesium aluminate spinel single crystals
US3816906A (en) 1969-06-20 1974-06-18 Siemens Ag Method of dividing mg-al spinel substrate wafers coated with semiconductor material and provided with semiconductor components
US3964942A (en) 1970-10-16 1976-06-22 International Business Machines Corporation Chemical polishing of single crystal dielectrics
US3796597A (en) 1970-11-02 1974-03-12 Texas Instruments Inc Method of producing semiconducting monocrystalline silicon on spinel substrates
US3753775A (en) 1971-03-01 1973-08-21 Rca Corp Chemical polishing of sapphire
US3736158A (en) 1971-03-19 1973-05-29 G Cullen Czochralski-grown spinel for use as epitaxial silicon substrate
US3808065A (en) 1972-02-28 1974-04-30 Rca Corp Method of polishing sapphire and spinel
US4177321A (en) 1972-07-25 1979-12-04 Semiconductor Research Foundation Single crystal of semiconductive material on crystal of insulating material
US3883313A (en) 1972-12-14 1975-05-13 Rca Corp Modified czochralski-grown magnesium aluminate spinel and method of making same
US3898065A (en) * 1973-10-09 1975-08-05 Norman Dryer Co Inc Lint collector
US3898051A (en) 1973-12-28 1975-08-05 Crystal Syst Crystal growing
GB1488940A (en) 1974-03-28 1977-10-19 Siemens Ag Production of monocrystals by the verneuil method
JPS5117663A (en) * 1974-08-02 1976-02-12 Handotai Kenkyu Shinkokai Handotaikibanyo supineruketsusho
US3950504A (en) * 1974-09-26 1976-04-13 Quigley Company, Inc. Process for producing magnesium aluminate spinel
JPS5343481A (en) 1976-10-01 1978-04-19 Matsushita Electric Ind Co Ltd Mirror surface etching method of sapphire substrate crystal
JPS5426873A (en) 1977-07-30 1979-02-28 Matsushita Electric Works Ltd Method of strengthing base material of paper for resin impregnation
US4347210A (en) 1980-05-09 1982-08-31 Raytheon Company Method of forging spinel domes
US4370739A (en) 1980-06-09 1983-01-25 Rca Corporation Spinel video disc playback stylus
JPS5890736A (ja) 1981-11-25 1983-05-30 Toshiba Corp 半導体装置用サフアイア基板
FR2521123A1 (fr) 1982-02-09 1983-08-12 Thomson Csf Procede de production de verre de silice dopee destine a l'elaboration de preforme pour fibre optique
JPS58211736A (ja) 1982-06-03 1983-12-09 Toshiba Corp ニオブ酸リチウム単結晶素子の製造方法
FR2555157B1 (fr) 1983-11-22 1989-03-03 France Etat Nouveaux oxydes mixtes utilisables en particulier dans des lasers accordables
JPS61134111A (ja) 1984-12-04 1986-06-21 Shin Etsu Chem Co Ltd タンタル酸リチウム単結晶ウエ−ハ
JPS61142759A (ja) 1984-12-14 1986-06-30 Ngk Spark Plug Co Ltd Ｉｃパツケ−ジ用基板
US4657754A (en) 1985-11-21 1987-04-14 Norton Company Aluminum oxide powders and process
JPS62123059A (ja) 1985-11-25 1987-06-04 株式会社住友金属セラミックス 表面平滑性の良いセラミック組成物の製造方法
JPS62188325A (ja) 1986-02-14 1987-08-17 Sumitomo Electric Ind Ltd 化合物半導体のｏｆ面出し方法及び装置
US4790982A (en) 1986-04-07 1988-12-13 Katalistiks International, Inc. Metal-containing spinel composition and process of using same
US4819167A (en) 1987-04-20 1989-04-04 Applied Materials, Inc. System and method for detecting the center of an integrated circuit wafer
US5138298A (en) 1989-11-02 1992-08-11 Sanken Electric Co., Ltd. Metallic oxide resistive bodies having a nonlinear volt-ampere characteristic and method of fabrication
US6258137B1 (en) 1992-02-05 2001-07-10 Saint-Gobain Industrial Ceramics, Inc. CMP products
AU650382B2 (en) 1992-02-05 1994-06-16 Norton Company Nano-sized alpha alumina particles
JPH07235692A (ja) 1993-12-30 1995-09-05 Sony Corp 化合物半導体装置及びその形成方法
US5679152A (en) 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
JPH07307316A (ja) 1994-05-12 1995-11-21 Sumitomo Electric Ind Ltd Ｉｉｉ −ｖ族半導体ウエ−ハ及びその加工方法
US5426083A (en) 1994-06-01 1995-06-20 Amoco Corporation Absorbent and process for removing sulfur oxides from a gaseous mixture
JP3559315B2 (ja) 1994-07-29 2004-09-02 京セラ株式会社 膜組成分析方法
JP3015261B2 (ja) 1994-09-12 2000-03-06 科学技術振興事業団 表面特性を改善するサファイア単結晶基板の熱処理方法
JP3329594B2 (ja) 1994-09-28 2002-09-30 有限会社遠野精器 フォトマスク用サファイヤ基板の製造方法
US5643044A (en) 1994-11-01 1997-07-01 Lund; Douglas E. Automatic chemical and mechanical polishing system for semiconductor wafers
US5557624A (en) 1995-01-20 1996-09-17 Hughes Aircraft Company Laser system using U-doped crystal Q-switch
US5530267A (en) 1995-03-14 1996-06-25 At&T Corp. Article comprising heteroepitaxial III-V nitride semiconductor material on a substrate
US5850410A (en) 1995-03-16 1998-12-15 Fujitsu Limited Semiconductor laser and method for fabricating the same
US5654973A (en) 1995-05-05 1997-08-05 Hughes Electronics Laser system using Co2+ -doped crystal Q-switch
US5742026A (en) 1995-06-26 1998-04-21 Corning Incorporated Processes for polishing glass and glass-ceramic surfaces using excimer laser radiation
US5825913A (en) 1995-07-18 1998-10-20 Cognex Corporation System for finding the orientation of a wafer
JP2987111B2 (ja) 1995-08-31 1999-12-06 株式会社東芝 半導体装置及びその製造方法
JPH09129651A (ja) 1995-08-31 1997-05-16 Hewlett Packard Co <Hp> サファイア基板のサーマル・アニーリング方法及び装置
US5802083A (en) 1995-12-11 1998-09-01 Milton Birnbaum Saturable absorber Q-switches for 2-μm lasers
US5968267A (en) 1996-01-25 1999-10-19 General Signal Technology Corporation Antivibration support for Czochralski crystal growing systems
US5644400A (en) 1996-03-29 1997-07-01 Lam Research Corporation Method and apparatus for determining the center and orientation of a wafer-like object
US5822213A (en) 1996-03-29 1998-10-13 Lam Research Corporation Method and apparatus for determining the center and orientation of a wafer-like object
JP2882355B2 (ja) 1996-04-10 1999-04-12 住友電気工業株式会社 Ｉｉｉ −ｖ族化合物半導体ウエハ及びその製造方法
US6021380A (en) 1996-07-09 2000-02-01 Scanis, Inc. Automatic semiconductor wafer sorter/prober with extended optical inspection
US6533874B1 (en) 1996-12-03 2003-03-18 Advanced Technology Materials, Inc. GaN-based devices using thick (Ga, Al, In)N base layers
US5741724A (en) 1996-12-27 1998-04-21 Motorola Method of growing gallium nitride on a spinel substrate
FR2758915B1 (fr) 1997-01-30 1999-03-05 Commissariat Energie Atomique Microlaser solide declenche passivement par absorbant saturable et son procede de fabrication
USRE38489E1 (en) 1997-01-30 2004-04-06 Commissariat A L'energie Atomique Solid microlaser passively switched by a saturable absorber and its production process
US5768335A (en) 1997-02-10 1998-06-16 Lucent Technologies Inc. Apparatus and method for measuring the orientation of a single crystal surface
JP3652861B2 (ja) 1997-11-27 2005-05-25 京セラ株式会社 薄膜成長用基板及びそれを用いた発光装置
US5982796A (en) 1997-12-16 1999-11-09 Union Carbide Chemicals & Plastics 2.7 μM laser crystalline material utilizing multiple-channel optical pumping
JP3805883B2 (ja) 1997-12-26 2006-08-09 東芝電子エンジニアリング株式会社 窒化ガリウム系半導体ウエハおよび窒化ガリウム系半導体素子、ならびにそれらの製造方法
US5989301A (en) 1998-02-18 1999-11-23 Saint-Gobain Industrial Ceramics, Inc. Optical polishing formulation
JPH11235659A (ja) 1998-02-18 1999-08-31 Ricoh Co Ltd 摩擦によって誘起される化学的除去加工方法およびその加工装置
JP3338360B2 (ja) 1998-03-23 2002-10-28 三洋電機株式会社 窒化ガリウム系半導体ウエハの製造方法
EP0947895B1 (de) 1998-04-02 2004-11-24 Comadur S.A. Uhrglas mit einer Linse und Verfahren zur Herstellung einer solchen Linse
EP0997445B1 (de) 1998-10-27 2004-03-10 Corning Incorporated Glaskeramiken mit niedriger Ausdehnung
KR100304664B1 (ko) 1999-02-05 2001-09-26 윤종용 ＧａＮ막 제조 방법
US6104529A (en) 1999-03-08 2000-08-15 Lucent Technologies Inc. Optical fiber communication system employing wide band crystal alloy light generation devices
US6402978B1 (en) 1999-05-06 2002-06-11 Mpm Ltd. Magnetic polishing fluids for polishing metal substrates
JP2000331940A (ja) 1999-05-20 2000-11-30 Sony Corp サファイア基板、窒化物系ｉｉｉ−ｖ族化合物半導体層の成長方法および半導体装置の製造方法
US6238450B1 (en) 1999-06-16 2001-05-29 Saint-Gobain Industrial Ceramics, Inc. Ceria powder
JP2001010898A (ja) 1999-06-24 2001-01-16 Nec Corp 結晶基板およびその製造方法
US6265089B1 (en) 1999-07-15 2001-07-24 The United States Of America As Represented By The Secretary Of The Navy Electronic devices grown on off-axis sapphire substrate
CN1154194C (zh) 1999-08-30 2004-06-16 光磊科技股份有限公司 发光二极管的基板构造
US6366596B1 (en) 2000-01-21 2002-04-02 Photonics Industries International, Inc. High power laser
JP2001198808A (ja) 2000-01-24 2001-07-24 Morioka Seiko Kogyo Kk 両面鏡面サファイヤ基板及びその製造方法
JP2001220295A (ja) 2000-02-10 2001-08-14 Namiki Precision Jewel Co Ltd サファイヤ基板
JP2001253800A (ja) 2000-03-13 2001-09-18 Namiki Precision Jewel Co Ltd 薄型サファイヤ基板
JP3662806B2 (ja) 2000-03-29 2005-06-22 日本電気株式会社 窒化物系半導体層の製造方法
JP2004006867A (ja) 2000-04-21 2004-01-08 Matsushita Electric Ind Co Ltd 半導体層の形成方法
US6364920B1 (en) 2000-04-21 2002-04-02 Saint-Gobain Ceramics & Plastics, Inc. CMP formulations
US6391072B1 (en) 2000-05-04 2002-05-21 Saint-Gobain Industrial Ceramics, Inc. Abrasive grain
US6746777B1 (en) 2000-05-31 2004-06-08 Applied Optoelectronics, Inc. Alternative substrates for epitaxial growth
US6627974B2 (en) 2000-06-19 2003-09-30 Nichia Corporation Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
JP2002012856A (ja) 2000-06-30 2002-01-15 Tomei Diamond Co Ltd ダイヤモンド含有研磨用加工液組成物
JP5017621B2 (ja) 2000-08-03 2012-09-05 並木精密宝石株式会社 サファイヤ基板とその製造方法
US7064355B2 (en) 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
JP3509740B2 (ja) 2000-11-22 2004-03-22 松下電器産業株式会社 半導体発光素子の製造方法及び半導体発光素子
US6657237B2 (en) 2000-12-18 2003-12-02 Samsung Electro-Mechanics Co., Ltd. GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
US6418921B1 (en) 2001-01-24 2002-07-16 Crystal Systems, Inc. Method and apparatus for cutting workpieces
JP4651207B2 (ja) 2001-02-26 2011-03-16 京セラ株式会社 半導体用基板とその製造方法
WO2002092674A1 (en) 2001-05-11 2002-11-21 The United States Of America, As Represented By The Secretary Of The Navy Naval Research Laboratory Laser forward transfer of rheological systems
US6839362B2 (en) 2001-05-22 2005-01-04 Saint-Gobain Ceramics & Plastics, Inc. Cobalt-doped saturable absorber Q-switches and laser systems
JP2002353425A (ja) 2001-05-29 2002-12-06 Kyocera Corp サファイア基板およびその製造方法
JP3768943B2 (ja) 2001-09-28 2006-04-19 日本碍子株式会社 Ｉｉｉ族窒化物エピタキシャル基板、ｉｉｉ族窒化物素子用エピタキシャル基板及びｉｉｉ族窒化物素子
JP2003113000A (ja) 2001-10-05 2003-04-18 Hitachi Cable Ltd 半導体エピタキシャルウェハ及びその製造方法
JP2003124151A (ja) 2001-10-17 2003-04-25 Disco Abrasive Syst Ltd サファイア基板のダイシング方法
JP2003165042A (ja) 2001-11-29 2003-06-10 Okamoto Machine Tool Works Ltd 基板用乾式研磨装置および基板の乾式研磨方法
AU2002360466A1 (en) 2001-12-04 2003-06-17 Landauer, Inc. Aluminum oxide material for optical data storage
JP2003273022A (ja) 2002-03-19 2003-09-26 Namiki Precision Jewel Co Ltd サファイヤ基板の表面処理方法
US6844084B2 (en) 2002-04-03 2005-01-18 Saint-Gobain Ceramics & Plastics, Inc. Spinel substrate and heteroepitaxial growth of III-V materials thereon
US6818532B2 (en) 2002-04-09 2004-11-16 Oriol, Inc. Method of etching substrates
JP3979578B2 (ja) 2002-05-01 2007-09-19 株式会社アライドマテリアル 単結晶サファイヤ基板の切断方法および切断装置
JP2003334754A (ja) 2002-05-16 2003-11-25 Nihon Micro Coating Co Ltd パッドレス研磨装置及び方法
CN1167140C (zh) 2002-05-17 2004-09-15 清华大学 高亮度氮化镓基发光二极管外延片的衬底处理方法
JP2003045829A (ja) 2002-06-04 2003-02-14 Hitachi Chem Co Ltd 研磨剤及び基板の研磨方法
JP2004014691A (ja) 2002-06-05 2004-01-15 Mitsubishi Gas Chem Co Inc 薄葉化ウェーハの製造法
TW550836B (en) 2002-06-13 2003-09-01 Ind Tech Res Inst Structure of brittle material substrate and fabricating process thereof
KR100499129B1 (ko) 2002-09-02 2005-07-04 삼성전기주식회사 발광 다이오드 및 그 제조방법
AU2002951838A0 (en) 2002-10-08 2002-10-24 Unisearch Limited Method of preparation for polycrystalline semiconductor films
CN1227730C (zh) 2003-04-30 2005-11-16 东莞市福地电子材料有限公司 一种纳米级蓝宝石衬底的加工方法
JP3938101B2 (ja) 2003-05-15 2007-06-27 日亜化学工業株式会社 発光素子の製造方法
CN1207756C (zh) 2003-06-27 2005-06-22 中国科学院上海光学精密机械研究所 ZnAl2O4/α－Al2O3复合衬底材料的制备方法
CN1204598C (zh) 2003-06-27 2005-06-01 中国科学院上海光学精密机械研究所 γ－LiAlO2/α－Al2O3复合衬底材料的制备方法
US7045223B2 (en) * 2003-09-23 2006-05-16 Saint-Gobain Ceramics & Plastics, Inc. Spinel articles and methods for forming same
JP2004140394A (ja) 2003-12-09 2004-05-13 Nissan Chem Ind Ltd 半導体ウェーハーの研磨剤及び研磨方法

Also Published As

Publication number Publication date
US20050064246A1 (en) 2005-03-24
DE602004030592D1 (de) 2011-01-27
JP5562905B2 (ja) 2014-07-30
US20050061229A1 (en) 2005-03-24
US7045223B2 (en) 2006-05-16
JP2011236123A (ja) 2011-11-24
IL174350A0 (en) 2006-08-01

Similar Documents

Publication Publication Date Title
MX2022004154A (es) Dispositivo de visualizacion que incluye un soporte de modulo y metodo de fabricacion del soporte de modulo.
NI200800017A (es) Formas cristalinas de la 4- metil-n-[3-(4- metil- imidazol-1-il)-5- trifluoro- metil-fenil]-3- (4- piridin- 3- il- pirimidin- 2-il -amino) benzamida
MX351229B (es) Artículo para etiquetar mercancías.
TW200509738A (en) Deposition mask, manufacturing method thereof, display unit, manufacturing method thereof, and electronic apparatus including display unit
NZ590039A (en) Axmi-il 5, axmi-113, axmi-005, axmi-163 and axmi-184 : vip3a insecticidal proteins from bacillus thuringiensis and methods for their use
MY135524A (en) Wearing article
TWI268570B (en) Substrate cassette
ATE491828T1 (de) Spinell-gegenstände
WO2020194066A3 (en) Systems and methods for bistable oligomeric machines
TW200608612A (en) Thermoelectric device and method of manufacturing the same
WO2008067098A3 (en) Applications of polycrystalline wafers
EP1498517A4 (de) Verfahren zur herstellung von silicium-einkristall, silicium-einkristall und silicium-wafer
TW200619734A (en) Method of manufacturing flexible display device
DE602005020666D1 (en) Mif-hemmer
TW200503619A (en) Use of isoindolinone derivatives as insecticides
HUP0402030A2 (hu) Új nukleinsav-szekvenciák és alkalmazásuk növényekben patogén-rezisztencia kialakítására szolgáló eljárásokban
TW200741804A (en) Substrate processing system
TW200715468A (en) Strained silicon on insulator (SSOI) structure with improved crystallinity in the strained silicon layer
TW200636328A (en) Substrate cassette
ATE299294T1 (de) Vorrichtung zur aufnahme von substraten
TWI229650B (en) Substrate accommodating tray
TW200517533A (en) Spinel articles and methods for forming same
WO2020207510A3 (zh) 基因在促进水稻籽粒产量上的应用
TW200638095A (en) Liquid crystal display panel and fabricating method thereof
TW200627032A (en) Signal transfer film, display apparatus having the same and method of manufacturing the same

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties