ATE492907T1 - Leistungs-mosfet mit graben-gateelektrode und verfahren zu dessen herstellung - Google Patents

Leistungs-mosfet mit graben-gateelektrode und verfahren zu dessen herstellung

Info

Publication number
ATE492907T1
ATE492907T1 AT02737592T AT02737592T ATE492907T1 AT E492907 T1 ATE492907 T1 AT E492907T1 AT 02737592 T AT02737592 T AT 02737592T AT 02737592 T AT02737592 T AT 02737592T AT E492907 T1 ATE492907 T1 AT E492907T1
Authority
AT
Austria
Prior art keywords
trench
epitaxial layer
gate electrode
type
power mosfet
Prior art date
Application number
AT02737592T
Other languages
English (en)
Inventor
Mohamed Darwish
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Application granted granted Critical
Publication of ATE492907T1 publication Critical patent/ATE492907T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H10P32/1406—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase by ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT02737592T 2001-07-03 2002-06-21 Leistungs-mosfet mit graben-gateelektrode und verfahren zu dessen herstellung ATE492907T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/898,652 US6569738B2 (en) 2001-07-03 2001-07-03 Process for manufacturing trench gated MOSFET having drain/drift region
PCT/US2002/020301 WO2003005452A2 (en) 2001-07-03 2002-06-21 Power mosfet having a trench gate electrode and method of making the same

Publications (1)

Publication Number Publication Date
ATE492907T1 true ATE492907T1 (de) 2011-01-15

Family

ID=25409818

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02737592T ATE492907T1 (de) 2001-07-03 2002-06-21 Leistungs-mosfet mit graben-gateelektrode und verfahren zu dessen herstellung

Country Status (8)

Country Link
US (2) US6569738B2 (de)
EP (1) EP1425802B1 (de)
JP (1) JP4028482B2 (de)
AT (1) ATE492907T1 (de)
AU (1) AU2002310514A1 (de)
DE (1) DE60238693D1 (de)
TW (1) TW544913B (de)
WO (1) WO2003005452A2 (de)

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US6777745B2 (en) * 2001-06-14 2004-08-17 General Semiconductor, Inc. Symmetric trench MOSFET device and method of making same
US6764906B2 (en) * 2001-07-03 2004-07-20 Siliconix Incorporated Method for making trench mosfet having implanted drain-drift region
US7033876B2 (en) * 2001-07-03 2006-04-25 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US7009247B2 (en) 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US6849898B2 (en) * 2001-08-10 2005-02-01 Siliconix Incorporated Trench MIS device with active trench corners and thick bottom oxide
US20060038223A1 (en) * 2001-07-03 2006-02-23 Siliconix Incorporated Trench MOSFET having drain-drift region comprising stack of implanted regions
US7291884B2 (en) * 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
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US8183629B2 (en) * 2004-05-13 2012-05-22 Vishay-Siliconix Stacked trench metal-oxide-semiconductor field effect transistor device
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US9306056B2 (en) 2009-10-30 2016-04-05 Vishay-Siliconix Semiconductor device with trench-like feed-throughs
US8604525B2 (en) 2009-11-02 2013-12-10 Vishay-Siliconix Transistor structure with feed-through source-to-substrate contact
US20110198689A1 (en) * 2010-02-17 2011-08-18 Suku Kim Semiconductor devices containing trench mosfets with superjunctions
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US20120018800A1 (en) * 2010-07-22 2012-01-26 Suku Kim Trench Superjunction MOSFET with Thin EPI Process
JP2012204636A (ja) 2011-03-25 2012-10-22 Toshiba Corp 半導体装置およびその製造方法
JP5729331B2 (ja) 2011-04-12 2015-06-03 株式会社デンソー 半導体装置の製造方法及び半導体装置
US8587059B2 (en) * 2011-04-22 2013-11-19 Infineon Technologies Austria Ag Transistor arrangement with a MOSFET
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US9425304B2 (en) 2014-08-21 2016-08-23 Vishay-Siliconix Transistor structure with improved unclamped inductive switching immunity
US9406750B2 (en) * 2014-11-19 2016-08-02 Empire Technology Development Llc Output capacitance reduction in power transistors
JP6115678B1 (ja) 2016-02-01 2017-04-19 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP6781667B2 (ja) * 2017-06-08 2020-11-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN113396482B (zh) * 2019-02-07 2023-12-19 罗姆股份有限公司 半导体装置
TWI732182B (zh) * 2019-02-23 2021-07-01 世界先進積體電路股份有限公司 半導體裝置及其形成方法
CN110071043A (zh) * 2019-04-24 2019-07-30 贵州芯长征科技有限公司 一种功率半导体器件的制备方法
CN110047758A (zh) * 2019-04-24 2019-07-23 贵州芯长征科技有限公司 一种低成本沟槽型功率半导体器件的制备工艺
CN110047757A (zh) * 2019-04-24 2019-07-23 贵州芯长征科技有限公司 低成本的沟槽型功率半导体器件的制备方法
US10892320B2 (en) 2019-04-30 2021-01-12 Vanguard International Semiconductor Corporation Semiconductor devices having stacked trench gate electrodes overlapping a well region
CN112531026B (zh) * 2019-09-17 2022-06-21 无锡华润上华科技有限公司 横向扩散金属氧化物半导体器件及其制造方法
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Also Published As

Publication number Publication date
DE60238693D1 (de) 2011-02-03
WO2003005452A3 (en) 2003-09-04
US20030006454A1 (en) 2003-01-09
JP2004535067A (ja) 2004-11-18
JP4028482B2 (ja) 2007-12-26
EP1425802A2 (de) 2004-06-09
TW544913B (en) 2003-08-01
US6600193B2 (en) 2003-07-29
US20030008460A1 (en) 2003-01-09
US6569738B2 (en) 2003-05-27
WO2003005452A2 (en) 2003-01-16
AU2002310514A1 (en) 2003-01-21
EP1425802B1 (de) 2010-12-22

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