ATE494292T1 - Eine pentakis(dimethylamino)disilanvorstufe enthaltende verbindung, und verfahren zu deren herstellung - Google Patents

Eine pentakis(dimethylamino)disilanvorstufe enthaltende verbindung, und verfahren zu deren herstellung

Info

Publication number
ATE494292T1
ATE494292T1 AT06743237T AT06743237T ATE494292T1 AT E494292 T1 ATE494292 T1 AT E494292T1 AT 06743237 T AT06743237 T AT 06743237T AT 06743237 T AT06743237 T AT 06743237T AT E494292 T1 ATE494292 T1 AT E494292T1
Authority
AT
Austria
Prior art keywords
pentakis
dimethylamino
production
compound containing
disilane precursor
Prior art date
Application number
AT06743237T
Other languages
English (en)
Inventor
Christian Dussarrat
Original Assignee
L Air Liquide Soc Anon A Directoire Et Conseil De Surveillance Pour L Etude Et L Expl Des Procedes G
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by L Air Liquide Soc Anon A Directoire Et Conseil De Surveillance Pour L Etude Et L Expl Des Procedes G filed Critical L Air Liquide Soc Anon A Directoire Et Conseil De Surveillance Pour L Etude Et L Expl Des Procedes G
Application granted granted Critical
Publication of ATE494292T1 publication Critical patent/ATE494292T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/12—Organo silicon halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
AT06743237T 2006-04-03 2006-04-03 Eine pentakis(dimethylamino)disilanvorstufe enthaltende verbindung, und verfahren zu deren herstellung ATE494292T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2006/061283 WO2007112779A1 (en) 2006-04-03 2006-04-03 Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof

Publications (1)

Publication Number Publication Date
ATE494292T1 true ATE494292T1 (de) 2011-01-15

Family

ID=37499486

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06743237T ATE494292T1 (de) 2006-04-03 2006-04-03 Eine pentakis(dimethylamino)disilanvorstufe enthaltende verbindung, und verfahren zu deren herstellung

Country Status (8)

Country Link
US (2) US8153832B2 (de)
EP (1) EP2004660B1 (de)
JP (1) JP5290146B2 (de)
KR (1) KR101304801B1 (de)
CN (1) CN101443338A (de)
AT (1) ATE494292T1 (de)
DE (1) DE602006019499D1 (de)
WO (1) WO2007112779A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8377511B2 (en) * 2006-04-03 2013-02-19 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method for depositing silicon nitride films and/or silicon oxynitride films by chemical vapor deposition
DE102009001088A1 (de) * 2009-02-23 2010-08-26 Wacker Chemie Ag Verfahren zur Herstellung und Stabilisierung von Oligoaminosilanen
KR20120099448A (ko) * 2009-10-28 2012-09-10 다우 코닝 코포레이션 폴리실란-폴리실라잔 코폴리머 및 이들의 제조방법 및 용도
US8728955B2 (en) 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
US9978585B2 (en) 2012-06-01 2018-05-22 Versum Materials Us, Llc Organoaminodisilane precursors and methods for depositing films comprising same
US9337018B2 (en) 2012-06-01 2016-05-10 Air Products And Chemicals, Inc. Methods for depositing films with organoaminodisilane precursors
US9796739B2 (en) 2013-06-26 2017-10-24 Versum Materials Us, Llc AZA-polysilane precursors and methods for depositing films comprising same
CN105849221B (zh) 2013-09-27 2019-06-18 乔治洛德方法研究和开发液化空气有限公司 胺取代的三甲硅烷基胺和三-二甲硅烷基胺化合物
JP6086250B2 (ja) * 2014-04-25 2017-03-01 大陽日酸株式会社 気液反応方法及びアミノシランの製造方法
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
TWI753794B (zh) 2016-03-23 2022-01-21 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 形成含矽膜之組成物及其製法與用途
JP6994037B2 (ja) * 2016-09-22 2022-01-14 ダウ シリコーンズ コーポレーション ＳｉＨ非含有ビニルジシラン
US11133226B2 (en) 2018-10-22 2021-09-28 Taiwan Semiconductor Manufacturing Company, Ltd. FUSI gated device formation
KR102805139B1 (ko) 2019-01-24 2025-05-08 어플라이드 머티어리얼스, 인코포레이티드 질화규소를 증착하는 방법들
CN112210769B (zh) * 2020-09-29 2023-04-25 合肥安德科铭半导体科技有限公司 一种低温高生长速率氧化硅薄膜的原子层沉积方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7446217B2 (en) 2002-11-14 2008-11-04 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films
US20050227017A1 (en) * 2003-10-31 2005-10-13 Yoshihide Senzaki Low temperature deposition of silicon nitride
US8377511B2 (en) * 2006-04-03 2013-02-19 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method for depositing silicon nitride films and/or silicon oxynitride films by chemical vapor deposition

Also Published As

Publication number Publication date
KR101304801B1 (ko) 2013-09-05
EP2004660A1 (de) 2008-12-24
DE602006019499D1 (de) 2011-02-17
EP2004660B1 (de) 2011-01-05
JP2009532395A (ja) 2009-09-10
US20100016620A1 (en) 2010-01-21
USRE45839E1 (en) 2016-01-12
WO2007112779A1 (en) 2007-10-11
KR20080112356A (ko) 2008-12-24
US8153832B2 (en) 2012-04-10
JP5290146B2 (ja) 2013-09-18
CN101443338A (zh) 2009-05-27

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