ATE494629T1 - Halbleitergehäuse und dessen herstellungsverfahren - Google Patents

Halbleitergehäuse und dessen herstellungsverfahren

Info

Publication number
ATE494629T1
ATE494629T1 AT02717346T AT02717346T ATE494629T1 AT E494629 T1 ATE494629 T1 AT E494629T1 AT 02717346 T AT02717346 T AT 02717346T AT 02717346 T AT02717346 T AT 02717346T AT E494629 T1 ATE494629 T1 AT E494629T1
Authority
AT
Austria
Prior art keywords
manufacturing process
semiconductor housing
silicone layer
wafer
integrated circuit
Prior art date
Application number
AT02717346T
Other languages
English (en)
Inventor
Gregory Becker
Geoffrey Gardner
Brian Harkness
Louise Malenfant
Satyendra Sarmah
Original Assignee
Dow Corning
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning filed Critical Dow Corning
Application granted granted Critical
Publication of ATE494629T1 publication Critical patent/ATE494629T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0012—Processes making use of the tackiness of the photolithographic materials, e.g. for mounting; Packaging for photolithographic material; Packages obtained by processing photolithographic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Paints Or Removers (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
AT02717346T 2001-02-20 2002-01-17 Halbleitergehäuse und dessen herstellungsverfahren ATE494629T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/789,083 US6617674B2 (en) 2001-02-20 2001-02-20 Semiconductor package and method of preparing same
PCT/US2002/001263 WO2002067292A2 (en) 2001-02-20 2002-01-17 Semiconductor package and method of preparing same

Publications (1)

Publication Number Publication Date
ATE494629T1 true ATE494629T1 (de) 2011-01-15

Family

ID=25146536

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02717346T ATE494629T1 (de) 2001-02-20 2002-01-17 Halbleitergehäuse und dessen herstellungsverfahren

Country Status (11)

Country Link
US (1) US6617674B2 (de)
EP (1) EP1362364B1 (de)
JP (1) JP4226905B2 (de)
KR (1) KR100813821B1 (de)
CN (3) CN1514954A (de)
AT (1) ATE494629T1 (de)
AU (1) AU2002248357A1 (de)
CA (1) CA2438126A1 (de)
DE (1) DE60238823D1 (de)
TW (1) TW563210B (de)
WO (2) WO2002067292A2 (de)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6617674B2 (en) * 2001-02-20 2003-09-09 Dow Corning Corporation Semiconductor package and method of preparing same
DE10144467B4 (de) * 2001-09-10 2006-07-27 Infineon Technologies Ag Elektronisches Sensorbauteil und Verfahren zu seiner Herstellung
US6836023B2 (en) * 2002-04-17 2004-12-28 Fairchild Semiconductor Corporation Structure of integrated trace of chip package
US6905904B2 (en) 2002-06-24 2005-06-14 Dow Corning Corporation Planar optical waveguide assembly and method of preparing same
US6907176B2 (en) * 2002-06-24 2005-06-14 Dow Corning Corporation Planar optical waveguide assembly and method of preparing same
JP3910908B2 (ja) * 2002-10-29 2007-04-25 新光電気工業株式会社 半導体装置用基板及びこの製造方法、並びに半導体装置
JP3910907B2 (ja) * 2002-10-29 2007-04-25 新光電気工業株式会社 キャパシタ素子及びこの製造方法、半導体装置用基板、並びに半導体装置
US7145229B2 (en) * 2002-11-14 2006-12-05 The Regents Of The University Of California Silicone metalization
US20040102022A1 (en) * 2002-11-22 2004-05-27 Tongbi Jiang Methods of fabricating integrated circuitry
EP1636653B1 (de) * 2003-06-23 2011-12-28 Dow Corning Corporation Verklebungsverfahren mit grauskala photolithographie
AU2003261279A1 (en) * 2003-07-28 2005-03-07 Dow Corning Corporation Method for etching a patterned silicone layyer
CN100540275C (zh) * 2003-11-17 2009-09-16 陶氏康宁公司 固化有机硅树脂基底的压花方法
DE102004005562A1 (de) * 2004-02-03 2005-08-25 Kettenbach Gmbh & Co. Kg Über Hydrosilylierungs-Reaktion additionsvernetzende Zweikomponenten-Dentalmaterial mit starren und/oder voluminösen Gruppen sowie mit hoher Biegefestigkeit und E-Modul
US7208344B2 (en) * 2004-03-31 2007-04-24 Aptos Corporation Wafer level mounting frame for ball grid array packaging, and method of making and using the same
DE102004036573A1 (de) * 2004-07-28 2006-03-23 Ge Bayer Silicones Gmbh & Co. Kg Verwendung lichtaktivierbarer, härtbarer Silikonzusammensetzungen zur Herstellung von dickwandigen Formartikeln oder dickwandigen Beschichtungen
EP1820065A2 (de) * 2004-08-11 2007-08-22 Dow Corning Corporation Halbdurchlässige membranen bildende photopolymerisierbare silikonmaterialien für sensoranwendungen
EP1819775B1 (de) * 2004-11-19 2008-09-24 Dow Corning Corporation Zusammensetzung aus organohydrogenpolysiloxanharz und silizium
US8092910B2 (en) * 2005-02-16 2012-01-10 Dow Corning Toray Co., Ltd. Reinforced silicone resin film and method of preparing same
EP1858981B1 (de) * 2005-02-16 2012-03-28 Dow Corning Corporation Verstärkte silikonharzfolie und herstellungsverfahren dafür
EP1854136A1 (de) 2005-03-01 2007-11-14 Dow Corning Corporation Temporäres waferbondingverfahren zur halbleiterverarbeitung
JP2006303452A (ja) * 2005-03-25 2006-11-02 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP4055015B2 (ja) * 2005-04-04 2008-03-05 セイコーエプソン株式会社 半導体装置の製造方法
WO2006132672A2 (en) * 2005-06-02 2006-12-14 Dow Corning Corporation A method of nanopatterning, a cured resist film use therein, and an article including the resist film
ATE452928T1 (de) * 2005-06-14 2010-01-15 Dow Corning Angereicherte silikonharzfolie und verfahren für ihre zubereitung
US8334022B2 (en) 2005-08-04 2012-12-18 Dow Corning Corporation Reinforced silicone resin film and method of preparing same
KR100647483B1 (ko) * 2005-08-19 2006-11-23 삼성전자주식회사 반도체 패키지의 배선 구조물 및 이의 제조 방법, 이를이용한 웨이퍼 레벨 패키지 및 이의 제조 방법
CN101356237B (zh) 2005-12-21 2011-06-29 陶氏康宁公司 有机硅树脂膜，其制备方法和纳米材料填充的有机硅组合物
WO2008051242A2 (en) 2006-01-19 2008-05-02 Dow Corning Corporation Silicone resin film, method of preparing same, and nanomaterial-filled silicone compositon
JP5178532B2 (ja) * 2006-02-02 2013-04-10 ダウ・コーニング・コーポレイション シリコーン樹脂フィルム、その調製方法、およびナノ材料充填シリコーン組成物
US7449785B2 (en) * 2006-02-06 2008-11-11 Taiwan Semiconductor Manufacturing Co., Ltd. Solder bump on a semiconductor substrate
WO2007097835A2 (en) * 2006-02-20 2007-08-30 Dow Corning Corporation Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
JP2007258317A (ja) * 2006-03-22 2007-10-04 Shin Etsu Chem Co Ltd 半導体装置の製造方法
JP2007266191A (ja) * 2006-03-28 2007-10-11 Nec Electronics Corp ウェハ処理方法
EP2005248A2 (de) * 2006-04-11 2008-12-24 Dow Corning Corporation Silikonverbundformen mit geringer thermischer verformung
JP2009540562A (ja) * 2006-06-05 2009-11-19 ダウ・コーニング・コーポレイション 電子パッケージ及びその製造方法
KR101540275B1 (ko) 2006-08-14 2015-07-29 다우 코닝 코포레이션 현상 용매로 패턴 형성 필름을 제조하는 방법
US7538021B2 (en) * 2006-09-20 2009-05-26 Intel Corporation Removing dry film resist residues using hydrolyzable membranes
EP2082024A4 (de) * 2006-09-25 2010-11-17 Advanced Tech Materials Zusammensetzungen und verfahren zur entfernung von fotolack bei einer wafer-nacharbeit
EP2117835A1 (de) 2007-02-22 2009-11-18 Dow Corning Corporation Verstärkte silikonharzfolien
EP2117836B1 (de) 2007-02-22 2012-11-07 Dow Corning Corporation Verstärkte silikonharzfolien
US7834449B2 (en) * 2007-04-30 2010-11-16 Broadcom Corporation Highly reliable low cost structure for wafer-level ball grid array packaging
US20100143686A1 (en) * 2007-05-01 2010-06-10 Bizhong Zhu Nanomaterial-Filled Silicone Composition and Reinforced Silicone Resin Film
US7872347B2 (en) * 2007-08-09 2011-01-18 Broadcom Corporation Larger than die size wafer-level redistribution packaging process
US8017246B2 (en) * 2007-11-08 2011-09-13 Philips Lumileds Lighting Company, Llc Silicone resin for protecting a light transmitting surface of an optoelectronic device
US20100264522A1 (en) * 2009-04-20 2010-10-21 Chien-Pin Chen Semiconductor device having at least one bump without overlapping specific pad or directly contacting specific pad
US8643164B2 (en) * 2009-06-11 2014-02-04 Broadcom Corporation Package-on-package technology for fan-out wafer-level packaging
WO2011100030A1 (en) 2010-02-12 2011-08-18 Dow Corning Corporation Temporary wafer bonding method for semiconductor processing
DE102010043149A1 (de) * 2010-10-29 2012-05-03 Wacker Chemie Ag Hochtransparente durch Licht vernetzbare Siliconmischungen
ES2552695T3 (es) 2012-08-06 2015-12-01 Unilin Bvba Método para fabricar paneles con una superficie decorativa
EP2905145B1 (de) 2014-02-06 2019-10-23 Unilin, BVBA Verfahren zur Herstellung von Bodenpaneelen mit dekorativer Oberfläche
TW201601358A (zh) * 2014-06-19 2016-01-01 道康寧公司 用於晶圓級ｚ軸熱中介層的可光圖案化聚矽氧
US20180002569A1 (en) * 2015-02-03 2018-01-04 Dow Corning Corporation Curable silicone formulations and related cured products, methods, articles, and devices
TWI678551B (zh) 2015-07-28 2019-12-01 美商道康寧公司 智慧型光學材料、配方、方法、用途、物品、及裝置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1369989A (en) 1970-11-27 1974-10-09 Dow Corning Ltd Organopolysiloxane elastomers
US3723497A (en) 1971-11-19 1973-03-27 Dow Corning Silicone compositions catalyzed with platinum ii diacetylacetonate
US4064027A (en) 1973-09-28 1977-12-20 Dow Corning Corporation UV curable composition
DE2736499C2 (de) 1977-08-12 1990-03-29 Wacker-Chemie GmbH, 8000 München Verfahren zum Herstellen von klebrige Stoffe abweisenden Überzügen
JPS5987840A (ja) 1982-11-10 1984-05-21 Toray Silicone Co Ltd 半導体装置
FR2597110A1 (fr) 1986-04-14 1987-10-16 Rhone Poulenc Multi Tech Composition organopolysiloxane, potentiellement reticulable et utilisable notamment en microlithographie, et son procede d'application
US5171716A (en) 1986-12-19 1992-12-15 North American Philips Corp. Method of manufacturing semiconductor device with reduced packaging stress
US5045918A (en) 1986-12-19 1991-09-03 North American Philips Corp. Semiconductor device with reduced packaging stress
US5145886A (en) 1988-05-19 1992-09-08 Minnesota Mining And Manufacturing Company Radiation activated hydrosilation reaction
US5091103A (en) * 1990-05-01 1992-02-25 Alicia Dean Photoresist stripper
KR950002874B1 (ko) 1990-06-25 1995-03-27 마쯔시다덴시고오교오 가부시기가이샤 광 또는 방사선감응성 조성물과 패턴형성방법과 포토마스크의 제조방법 및 반도체
US5679977A (en) * 1990-09-24 1997-10-21 Tessera, Inc. Semiconductor chip assemblies, methods of making same and components for same
US5678301A (en) * 1991-06-04 1997-10-21 Micron Technology, Inc. Method for forming an interconnect for testing unpackaged semiconductor dice
US5290397A (en) * 1992-08-21 1994-03-01 Cornell Research Foundation, Inc. Bilayer resist and process for preparing same
US5854302A (en) * 1993-04-29 1998-12-29 The Dow Chemical Company Partially polymerized divinylsiloxane linked bisbenzocyclobutene resins and methods for making said resins
US5834339A (en) * 1996-03-07 1998-11-10 Tessera, Inc. Methods for providing void-free layers for semiconductor assemblies
US6284563B1 (en) 1995-10-31 2001-09-04 Tessera, Inc. Method of making compliant microelectronic assemblies
US6211572B1 (en) * 1995-10-31 2001-04-03 Tessera, Inc. Semiconductor chip package with fan-in leads
CN1178230A (zh) * 1996-07-30 1998-04-08 日本化药株式会社 半导体封装用环氧树脂液体组合物
JP3639088B2 (ja) * 1997-06-06 2005-04-13 株式会社ルネサステクノロジ 半導体装置及び配線テープ
CN1244038A (zh) * 1998-08-04 2000-02-09 长兴化学工业股份有限公司 半导体封装用树脂组合物
US6103552A (en) 1998-08-10 2000-08-15 Lin; Mou-Shiung Wafer scale packaging scheme
JP4174174B2 (ja) * 2000-09-19 2008-10-29 株式会社ルネサステクノロジ 半導体装置およびその製造方法並びに半導体装置実装構造体
US6617674B2 (en) * 2001-02-20 2003-09-09 Dow Corning Corporation Semiconductor package and method of preparing same

Also Published As

Publication number Publication date
US20020158317A1 (en) 2002-10-31
JP4226905B2 (ja) 2009-02-18
CA2438126A1 (en) 2002-08-29
AU2002248357A1 (en) 2002-09-04
EP1362364B1 (de) 2011-01-05
DE60238823D1 (de) 2011-02-17
KR20030080012A (ko) 2003-10-10
WO2002067292A2 (en) 2002-08-29
WO2005017627A1 (en) 2005-02-24
TW563210B (en) 2003-11-21
US6617674B2 (en) 2003-09-09
CN1514954A (zh) 2004-07-21
CN1820230A (zh) 2006-08-16
CN101581880A (zh) 2009-11-18
JP2004530288A (ja) 2004-09-30
EP1362364A2 (de) 2003-11-19
KR100813821B1 (ko) 2008-03-17
WO2002067292A3 (en) 2002-12-19
CN101581880B (zh) 2011-12-14

Similar Documents

Publication Publication Date Title
DE60238823D1 (de) Halbleitergehäuse und dessen herstellungsverfahren
AU2003230678A1 (en) Semiconductor package and method of preparing same
DE102004041514A1 (de) Verstärkte Lothügelstruktur, Herstellungsverfahren und Halbleiterbauelement
TW516141B (en) Semiconductor device
TW200503209A (en) Semiconductor package
EP1251558A8 (de) Halbleiteranordnung
BR0109077A (pt) Dispositivo hermeticamente revestido e método de fabricação do mesmo
TW200515557A (en) Semiconductor package, method for manufacturing the same and lead frame for use in the same
TWI256719B (en) Semiconductor device package module and manufacturing method thereof
AU2002340128A1 (en) Mos devices and corresponding manufacturing methods and circuits
MY140584A (en) Semiconductor device with a protected active die region and method therefor
TW200721421A (en) Semiconductor structure and method of assembly
TW200605283A (en) Method of manufacturing semiconductor device
TW200509331A (en) Semiconductor chip package and method for making the same
DE60219113D1 (de) Polierkissen für Halbleiter-Wafer
WO2003054954A3 (en) Electrical/optical integration scheme using direct copper bonding
SG115753A1 (en) Semiconductor element and wafer level chip size package therefor
TW200503221A (en) Semiconductor device having a bond pad and method therefor
TW200723478A (en) System-in-package structure
TW200518245A (en) Bond pad for flip chip package
TW200503217A (en) Wafer structure and bumping process
TW347585B (en) Lead frame, semiconductor device using the same and manufacturing of semiconductor device thereof
DE60308682D1 (de) Tragbarer silizium chip
TW200737437A (en) Chip package and package process thereof
TW200514216A (en) Quad flat no-lead package structure and manufacturing method thereof

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties