ATE495553T1 - Methode zur herstellung eines strukturierten halbleiterfilms - Google Patents

Methode zur herstellung eines strukturierten halbleiterfilms

Info

Publication number
ATE495553T1
ATE495553T1 AT00959768T AT00959768T ATE495553T1 AT E495553 T1 ATE495553 T1 AT E495553T1 AT 00959768 T AT00959768 T AT 00959768T AT 00959768 T AT00959768 T AT 00959768T AT E495553 T1 ATE495553 T1 AT E495553T1
Authority
AT
Austria
Prior art keywords
providing
gate dielectric
contiguous
electrode
substrate
Prior art date
Application number
AT00959768T
Other languages
English (en)
Inventor
Karl Amundson
Paul Drzaic
Jianna Wang
Gregg Duthaler
Peter Kazlas
Original Assignee
E Ink Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/621,000 external-priority patent/US6842657B1/en
Application filed by E Ink Corp filed Critical E Ink Corp
Priority claimed from PCT/US2000/024091 external-priority patent/WO2001017041A1/en
Application granted granted Critical
Publication of ATE495553T1 publication Critical patent/ATE495553T1/de

Links

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
AT00959768T 1999-08-31 2000-08-31 Methode zur herstellung eines strukturierten halbleiterfilms ATE495553T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15171699P 1999-08-31 1999-08-31
US15171599P 1999-08-31 1999-08-31
US09/621,000 US6842657B1 (en) 1999-04-09 2000-07-21 Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device fabrication
PCT/US2000/024091 WO2001017041A1 (en) 1999-08-31 2000-08-31 Method for forming a patterned semiconductor film

Publications (1)

Publication Number Publication Date
ATE495553T1 true ATE495553T1 (de) 2011-01-15

Family

ID=43426167

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00959768T ATE495553T1 (de) 1999-08-31 2000-08-31 Methode zur herstellung eines strukturierten halbleiterfilms

Country Status (3)

Country Link
JP (1) JP5677266B2 (de)
AT (1) ATE495553T1 (de)
DE (1) DE60045513D1 (de)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5937494B2 (ja) * 1977-05-27 1984-09-10 三菱電機株式会社 薄膜のパタ−ン形成法
JPH03159134A (ja) * 1989-11-16 1991-07-09 Sanyo Electric Co Ltd 液晶表示装置の製造方法
JPH03159175A (ja) * 1989-11-16 1991-07-09 Sanyo Electric Co Ltd 液晶表示装置
JPH04199638A (ja) * 1990-11-29 1992-07-20 Ricoh Co Ltd 電界効果型薄膜トランジスタ、これを用いた表示装置及びその製造方法
JPH0821718B2 (ja) * 1992-07-30 1996-03-04 日本電気株式会社 電界効果型トランジスタおよびその製造方法
US6124851A (en) * 1995-07-20 2000-09-26 E Ink Corporation Electronic book with multiple page displays
JPH09116163A (ja) * 1995-10-23 1997-05-02 Sharp Corp 電界効果トランジスタ及びその製造方法

Also Published As

Publication number Publication date
DE60045513D1 (de) 2011-02-24
JP5677266B2 (ja) 2015-02-25
JP2012028818A (ja) 2012-02-09

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