ATE456863T1 - Verfahren zur herstellung einer dünnfilmtransistorstruktur - Google Patents

Verfahren zur herstellung einer dünnfilmtransistorstruktur

Info

Publication number
ATE456863T1
ATE456863T1 AT01273779T AT01273779T ATE456863T1 AT E456863 T1 ATE456863 T1 AT E456863T1 AT 01273779 T AT01273779 T AT 01273779T AT 01273779 T AT01273779 T AT 01273779T AT E456863 T1 ATE456863 T1 AT E456863T1
Authority
AT
Austria
Prior art keywords
thin film
film transistor
transistor structure
producing
trench
Prior art date
Application number
AT01273779T
Other languages
English (en)
Inventor
Hiroshi Suzuki
Kuniaki Sueoka
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE456863T1 publication Critical patent/ATE456863T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates

Landscapes

  • Thin Film Transistor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Bipolar Transistors (AREA)
AT01273779T 2001-02-19 2001-12-18 Verfahren zur herstellung einer dünnfilmtransistorstruktur ATE456863T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001042081 2001-02-19
PCT/JP2001/011110 WO2002067335A1 (en) 2001-02-19 2001-12-18 Thin-film transistor structure, method for manufacturing the thin-film transistor structure, and display device using the thin-film transistor structure

Publications (1)

Publication Number Publication Date
ATE456863T1 true ATE456863T1 (de) 2010-02-15

Family

ID=18904430

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01273779T ATE456863T1 (de) 2001-02-19 2001-12-18 Verfahren zur herstellung einer dünnfilmtransistorstruktur

Country Status (9)

Country Link
US (2) US6952036B2 (de)
EP (1) EP1369928B1 (de)
JP (1) JP4022470B2 (de)
KR (1) KR100650417B1 (de)
CN (1) CN100459163C (de)
AT (1) ATE456863T1 (de)
DE (1) DE60141225D1 (de)
TW (1) TW541705B (de)
WO (1) WO2002067335A1 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4022470B2 (ja) 2001-02-19 2007-12-19 日本アイ・ビー・エム株式会社 薄膜トランジスタ構造の製造方法、およびディスプレイ・デバイス
US6887776B2 (en) * 2003-04-11 2005-05-03 Applied Materials, Inc. Methods to form metal lines using selective electrochemical deposition
TWI253174B (en) * 2003-05-09 2006-04-11 Au Optronics Corp Ion sensitive field effect transistor and fabrication method of the same
EP1629544B1 (de) * 2003-05-12 2008-11-19 Cambridge Enterprise Limited Polymerer transistor
EP1651018A4 (de) * 2003-06-04 2009-11-11 Tadahiro Ohmi Substrat und prozess zu seiner herstellung
CN100592478C (zh) * 2003-12-02 2010-02-24 株式会社半导体能源研究所 薄膜晶体管、显示器件和液晶显示器件、及其制造方法
KR101124999B1 (ko) * 2003-12-02 2012-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제조 방법
JP4554344B2 (ja) * 2003-12-02 2010-09-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7868957B2 (en) * 2003-12-02 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device and liquid crystal display device and method for manufacturing the same
CN100508137C (zh) * 2003-12-02 2009-07-01 株式会社半导体能源研究所 电子装置和半导体装置以及用于制造这些装置的方法
JP4712361B2 (ja) * 2003-12-02 2011-06-29 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
US7223641B2 (en) * 2004-03-26 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, liquid crystal television and EL television
KR100636503B1 (ko) * 2004-06-25 2006-10-18 삼성에스디아이 주식회사 발광 표시장치와 그의 제조방법
JP2006030502A (ja) * 2004-07-15 2006-02-02 Sony Corp 表示装置および表示装置の製造方法
JP4628040B2 (ja) * 2004-08-20 2011-02-09 株式会社半導体エネルギー研究所 半導体素子を備えた表示装置の製造方法
CN100452325C (zh) * 2005-03-22 2009-01-14 友达光电股份有限公司 一种薄膜晶体管与液晶显示器的制造方法
TW200713596A (en) * 2005-06-13 2007-04-01 Univ Tohoku Thin-film transistor, wiring board, and method of producing an electronic apparatus
TW200721501A (en) * 2005-07-05 2007-06-01 Univ Tohoku Thin-film transistor, wiring board and methods of producing the thin-film transistor and the wiring board
US7397086B2 (en) * 2005-12-23 2008-07-08 Xerox Corporation Top-gate thin-film transistor
JP2007203442A (ja) * 2006-02-06 2007-08-16 Univ Kanagawa 金属被覆砥粒，金属被覆砥粒の製造方法，およびその金属被覆砥粒を使用した砥石
US9179579B2 (en) * 2006-06-08 2015-11-03 International Business Machines Corporation Sheet having high thermal conductivity and flexibility
TWI305682B (en) 2006-08-14 2009-01-21 Au Optronics Corp Bottom substrate for liquid crystal display device and the method of making the same
JP2008103653A (ja) * 2006-09-22 2008-05-01 Tohoku Univ 半導体装置及び半導体装置の製造方法
KR101272489B1 (ko) * 2006-10-03 2013-06-07 삼성디스플레이 주식회사 표시 기판, 이의 제조 방법 및 이를 구비하는 전기영동표시장치
JP5329038B2 (ja) * 2006-12-21 2013-10-30 宇部日東化成株式会社 半導体装置及び半導体装置の製造方法
KR101418588B1 (ko) * 2007-11-14 2014-07-16 삼성디스플레이 주식회사 표시 기판 및 이의 제조 방법
GB2454740B (en) * 2007-11-19 2011-12-21 Hewlett Packard Development Co Conductive interconnects
EP2151876A1 (de) * 2008-08-05 2010-02-10 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Elektrische Transportkomponente, Herstellungsverfahren dafür sowie elektro-optische Vorrichtung und opto-elektrische Vorrichtung
JP2010040897A (ja) * 2008-08-07 2010-02-18 Sony Corp 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、および電子機器
JP5533050B2 (ja) * 2009-04-23 2014-06-25 セイコーエプソン株式会社 半導体装置の製造方法、半導体装置、アクティブマトリクス装置、電気光学装置および電子機器
US9099437B2 (en) * 2011-03-08 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5891952B2 (ja) * 2012-05-29 2016-03-23 株式会社ジャパンディスプレイ 表示装置の製造方法
KR20140061030A (ko) 2012-11-13 2014-05-21 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR20140064550A (ko) * 2012-11-20 2014-05-28 삼성디스플레이 주식회사 박막 트랜지스터 표시판의 제조 방법
WO2015076358A1 (ja) * 2013-11-21 2015-05-28 株式会社ニコン 配線パターンの製造方法およびトランジスタの製造方法
TW201525064A (zh) * 2013-12-16 2015-07-01 Daxin Materials Corp 感光樹脂組成物、感光樹脂及有機發光二極體顯示元件
CN104795400B (zh) * 2015-02-12 2018-10-30 合肥鑫晟光电科技有限公司 阵列基板制造方法、阵列基板和显示装置
CN106128963B (zh) * 2016-09-23 2019-07-23 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法、显示面板
CN106876260B (zh) * 2017-03-03 2020-03-27 惠科股份有限公司 一种闸电极结构及其制造方法和显示装置
CN107665896B (zh) * 2017-10-27 2021-02-23 北京京东方显示技术有限公司 显示基板及其制作方法、显示面板和显示装置
US11114475B2 (en) * 2017-11-22 2021-09-07 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. IPS thin-film transistor array substrate and manufacturing method thereof
CN109873037A (zh) * 2019-03-20 2019-06-11 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、显示装置
CN113540127B (zh) * 2021-07-19 2023-09-19 合肥鑫晟光电科技有限公司 一种背板、显示面板、显示装置及其制备方法
CN115000096B (zh) * 2022-05-31 2025-06-27 京东方科技集团股份有限公司 晶体管结构、显示基板及制备方法、显示装置
US20250046735A1 (en) * 2023-07-31 2025-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Light sensor for package intrusion detection

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6418758U (de) * 1987-07-25 1989-01-30
EP0608503B1 (de) * 1989-02-14 1997-05-28 Seiko Epson Corporation Halbleitervorrichtung und Verfahren zu ihrer Herstellung
JPH0651350A (ja) * 1992-08-03 1994-02-25 Alps Electric Co Ltd 表示装置
JPH06107881A (ja) * 1992-09-30 1994-04-19 Mitsubishi Rayon Co Ltd 光拡散性メタクリル樹脂
JPH06177126A (ja) * 1992-12-01 1994-06-24 Alps Electric Co Ltd 薄膜積層体の形成方法
JPH0823102A (ja) * 1994-07-08 1996-01-23 Matsushita Electric Ind Co Ltd 電子部品及びその製造方法
US5530293A (en) * 1994-11-28 1996-06-25 International Business Machines Corporation Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits
US5686329A (en) * 1995-12-29 1997-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming a metal oxide semiconductor field effect transistor (MOSFET) having improved hot carrier immunity
GB2321336B (en) * 1997-01-15 2001-07-25 Univ Warwick Gas-sensing semiconductor devices
JP3859181B2 (ja) 1997-03-27 2006-12-20 東京応化工業株式会社 導電パターン形成方法
US6121159A (en) * 1997-06-19 2000-09-19 Lsi Logic Corporation Polymeric dielectric layers having low dielectric constants and improved adhesion to metal lines
JPH1146006A (ja) * 1997-07-25 1999-02-16 Canon Inc 光起電力素子およびその製造方法
JPH11232335A (ja) 1998-02-13 1999-08-27 Nec Corp 注文管理装置
JP3299167B2 (ja) 1998-02-13 2002-07-08 日本板硝子株式会社 埋設電極付き基板の製造方法
JPH11339672A (ja) * 1998-05-29 1999-12-10 Sony Corp 画像表示装置の製造方法
US6501098B2 (en) * 1998-11-25 2002-12-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
US6225238B1 (en) * 1999-06-07 2001-05-01 Allied Signal Inc Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes
JP3272326B2 (ja) 1999-06-14 2002-04-08 三協化学株式会社 ２−ピリジルピリジン誘導体の製造方法
KR20010046141A (ko) * 1999-11-10 2001-06-05 구본준 박막 트랜지스터 및 배선 제조방법
JP4022470B2 (ja) 2001-02-19 2007-12-19 日本アイ・ビー・エム株式会社 薄膜トランジスタ構造の製造方法、およびディスプレイ・デバイス
US7045861B2 (en) * 2002-03-26 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, liquid-crystal display device and method for manufacturing same
US6825517B2 (en) * 2002-08-28 2004-11-30 Cova Technologies, Inc. Ferroelectric transistor with enhanced data retention
TW200406829A (en) * 2002-09-17 2004-05-01 Adv Lcd Tech Dev Ct Co Ltd Interconnect, interconnect forming method, thin film transistor, and display device
US6887776B2 (en) * 2003-04-11 2005-05-03 Applied Materials, Inc. Methods to form metal lines using selective electrochemical deposition

Also Published As

Publication number Publication date
TW541705B (en) 2003-07-11
KR100650417B1 (ko) 2006-11-28
US20050250262A1 (en) 2005-11-10
DE60141225D1 (de) 2010-03-18
KR20030077621A (ko) 2003-10-01
WO2002067335A1 (en) 2002-08-29
US6952036B2 (en) 2005-10-04
EP1369928B1 (de) 2010-01-27
JPWO2002067335A1 (ja) 2004-06-24
EP1369928A4 (de) 2006-01-11
US7326600B2 (en) 2008-02-05
EP1369928A1 (de) 2003-12-10
CN1489790A (zh) 2004-04-14
JP4022470B2 (ja) 2007-12-19
US20040113161A1 (en) 2004-06-17
CN100459163C (zh) 2009-02-04

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