ATE496393T1 - Verfahren zur herstellung eines halbleiterbauelements und mit einem solchen verfahren erhaltenes halbleiterbauelement - Google Patents

Verfahren zur herstellung eines halbleiterbauelements und mit einem solchen verfahren erhaltenes halbleiterbauelement

Info

Publication number
ATE496393T1
ATE496393T1 AT06821240T AT06821240T ATE496393T1 AT E496393 T1 ATE496393 T1 AT E496393T1 AT 06821240 T AT06821240 T AT 06821240T AT 06821240 T AT06821240 T AT 06821240T AT E496393 T1 ATE496393 T1 AT E496393T1
Authority
AT
Austria
Prior art keywords
semiconductor
region
opening
semiconductor layer
collector
Prior art date
Application number
AT06821240T
Other languages
English (en)
Inventor
Joost Melai
Erwin Hijzen
Philippe Meunier-Beillard
Johannes Donkers
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE496393T1 publication Critical patent/ATE496393T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/054—Forming extrinsic base regions on silicon substrate after insulating device isolation in vertical BJTs having single crystalline emitter, collector or base regions

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
AT06821240T 2005-11-21 2006-10-29 Verfahren zur herstellung eines halbleiterbauelements und mit einem solchen verfahren erhaltenes halbleiterbauelement ATE496393T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05110997 2005-11-21
PCT/IB2006/053996 WO2007057803A1 (en) 2005-11-21 2006-10-29 Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

Publications (1)

Publication Number Publication Date
ATE496393T1 true ATE496393T1 (de) 2011-02-15

Family

ID=37772906

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06821240T ATE496393T1 (de) 2005-11-21 2006-10-29 Verfahren zur herstellung eines halbleiterbauelements und mit einem solchen verfahren erhaltenes halbleiterbauelement

Country Status (7)

Country Link
US (1) US8173511B2 (de)
EP (1) EP1955367B1 (de)
JP (1) JP2009516912A (de)
CN (1) CN101313394B (de)
AT (1) ATE496393T1 (de)
DE (1) DE602006019770D1 (de)
WO (1) WO2007057803A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009141753A1 (en) * 2008-05-21 2009-11-26 Nxp B.V. A method of manufacturing a bipolar transistor semiconductor device and semiconductor devices obtained thereby
US8729662B2 (en) * 2008-09-12 2014-05-20 Semiconductor Components Industries, Llc Semiconductor device and manufacturing method thereof
EP2372754B1 (de) * 2010-04-01 2018-03-14 Nxp B.V. Abstandshalterstruktur bei der Herstellung von flachen Bipolartransistoren
EP2506297A1 (de) * 2011-03-29 2012-10-03 Nxp B.V. Bi-CMOS-Vorrichtung und Verfahren
CN109887996B (zh) * 2019-01-31 2022-03-08 上海华虹宏力半导体制造有限公司 自对准锗硅hbt器件的制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1267092A (zh) * 1999-03-10 2000-09-20 光磊科技股份有限公司 光电晶体
FR2805923B1 (fr) * 2000-03-06 2002-05-24 St Microelectronics Sa Procede de fabrication d'un transistor bipolaire double- polysilicium auto-aligne
TW515106B (en) * 2000-09-13 2002-12-21 Toshiba Corp Bipolar transistor, semiconductor light emitting device and semiconductor device
EP1512172B1 (de) * 2002-05-29 2010-04-28 Nxp B.V. Verfahren zur herstellung eines sige heteroübergang-bipolartransistors
KR20060056971A (ko) * 2003-08-01 2006-05-25 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 바이폴라 트랜지스터를 갖는 반도체 소자의 제조방법 및바이폴라 트랜지스터를 갖는 소자
FR2868203B1 (fr) * 2004-03-29 2006-06-09 St Microelectronics Sa Procede de fabrication d'un transistor bipolaire a base extrinseque monocristalline

Also Published As

Publication number Publication date
US8173511B2 (en) 2012-05-08
CN101313394B (zh) 2011-10-05
EP1955367A1 (de) 2008-08-13
WO2007057803A1 (en) 2007-05-24
CN101313394A (zh) 2008-11-26
EP1955367B1 (de) 2011-01-19
US20100289022A1 (en) 2010-11-18
DE602006019770D1 (de) 2011-03-03
JP2009516912A (ja) 2009-04-23

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