ATE532211T1 - Verfahren zur herstellung eines bipolaren transistors - Google Patents
Verfahren zur herstellung eines bipolaren transistorsInfo
- Publication number
- ATE532211T1 ATE532211T1 AT07826193T AT07826193T ATE532211T1 AT E532211 T1 ATE532211 T1 AT E532211T1 AT 07826193 T AT07826193 T AT 07826193T AT 07826193 T AT07826193 T AT 07826193T AT E532211 T1 ATE532211 T1 AT E532211T1
- Authority
- AT
- Austria
- Prior art keywords
- region
- base
- forming
- collector
- bipolar transistor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000002955 isolation Methods 0.000 abstract 4
- 230000000694 effects Effects 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
- H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP06300911 | 2006-08-31 | ||
| PCT/IB2007/053476 WO2008026175A1 (en) | 2006-08-31 | 2007-08-29 | Method of manufacturing a bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE532211T1 true ATE532211T1 (de) | 2011-11-15 |
Family
ID=38884689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07826193T ATE532211T1 (de) | 2006-08-31 | 2007-08-29 | Verfahren zur herstellung eines bipolaren transistors |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8026146B2 (de) |
| EP (1) | EP2062291B1 (de) |
| CN (1) | CN101529568B (de) |
| AT (1) | ATE532211T1 (de) |
| WO (1) | WO2008026175A1 (de) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102082172B (zh) * | 2009-11-26 | 2013-04-24 | 上海华虹Nec电子有限公司 | 应用锗硅工艺的多晶三极管及其制作方法 |
| DE102011084642A1 (de) * | 2011-06-24 | 2012-12-27 | IHP GmbH - Innovations for High Performance Micrelectronics/Institut für innovative Mikroelektronik | Vertikaler Bipolartransistor mit lateralem Kollektor-Driftgebiet |
| EP2800127B1 (de) | 2013-05-01 | 2020-07-08 | Nxp B.V. | Verfahren zum Herstellen eines bipolaren Transistors, bipolarer Transistor und integrierte Schaltung |
| US20140347135A1 (en) * | 2013-05-23 | 2014-11-27 | Nxp B.V. | Bipolar transistors with control of electric field |
| EP2919272B1 (de) * | 2014-03-12 | 2020-05-27 | Nxp B.V. | Bipolare Transistorvorrichtung und Verfahren zur Herstellung |
| EP3155664B1 (de) | 2014-10-13 | 2019-04-03 | Ideal Power Inc. | Feldplatten auf zwei gegenüberliegenden oberflächen eines bidirektionalen bipolaren doppelbasistransistors; vorrichtungen und schaltverfahren |
| GB2534800B (en) * | 2014-10-20 | 2017-01-18 | Ideal Power Inc | Bidirectional power switching with bipolar conduction and with two control terminals gated by two merged transistors |
| EP3041052A1 (de) * | 2015-01-05 | 2016-07-06 | Ampleon Netherlands B.V. | Halbleiterbauelement das einen vertikalen Bipolartransistor mit lateraler Driftregion enthält |
| US9324846B1 (en) | 2015-01-08 | 2016-04-26 | Globalfoundries Inc. | Field plate in heterojunction bipolar transistor with improved break-down voltage |
| DE102015208133B3 (de) * | 2015-04-30 | 2016-08-18 | Infineon Technologies Ag | BiMOS-Vorrichtung mit einem vollständig selbstausgerichteten Emittersilicium und Verfahren zu deren Herstellung |
| US10734505B2 (en) * | 2017-11-30 | 2020-08-04 | International Business Machines Corporation | Lateral bipolar junction transistor with dual base region |
| US11355581B2 (en) | 2019-08-19 | 2022-06-07 | Stmicroelectronics (Crolles 2) Sas | Device comprising a transistor |
| US11276752B2 (en) * | 2019-08-19 | 2022-03-15 | Stmicroelectronics (Crolles 2) Sas | Method for forming a device comprising a bipolar transistor |
| US11804542B2 (en) | 2021-08-27 | 2023-10-31 | Globalfoundries U.S. Inc. | Annular bipolar transistors |
| US20240162345A1 (en) * | 2022-11-10 | 2024-05-16 | Globalfoundries U.S. Inc. | Transistor with metal field plate contact |
| FR3148117B1 (fr) * | 2023-04-21 | 2025-04-25 | St Microelectronics Int Nv | Transistor bipolaire |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1018779B (zh) * | 1987-01-30 | 1992-10-21 | 得克萨斯仪器公司 | 垂直双极型晶体管 |
| US5484737A (en) * | 1994-12-13 | 1996-01-16 | Electronics & Telecommunications Research Institute | Method for fabricating bipolar transistor |
| US20020048892A1 (en) * | 1998-03-23 | 2002-04-25 | Nec Corporation | Bipolar transistor with trenched-groove isolation regions |
| CN1215569C (zh) * | 1999-03-15 | 2005-08-17 | 松下电器产业株式会社 | 半导体器件及其制造方法 |
| US6448124B1 (en) * | 1999-11-12 | 2002-09-10 | International Business Machines Corporation | Method for epitaxial bipolar BiCMOS |
| DE19958062C2 (de) * | 1999-12-02 | 2002-06-06 | Infineon Technologies Ag | Verfahren zur Herstellung eines Bipolartransistors und Verfahren zur Herstellung einer integrierten Schaltungsanordnung mit einem solchen Bipolartransistor |
| US6992337B2 (en) | 2004-04-02 | 2006-01-31 | Agilent Technologies, Inc. | Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probability |
| US7026669B2 (en) | 2004-06-03 | 2006-04-11 | Ranbir Singh | Lateral channel transistor |
| US7180159B2 (en) * | 2004-07-13 | 2007-02-20 | Texas Instruments Incorporated | Bipolar transistor having base over buried insulating and polycrystalline regions |
| US7132344B1 (en) * | 2004-12-03 | 2006-11-07 | National Semiconductor Corporation | Super self-aligned BJT with base shorted field plate and method of fabricating |
| US7170083B2 (en) * | 2005-01-07 | 2007-01-30 | International Business Machines Corporation | Bipolar transistor with collector having an epitaxial Si:C region |
-
2007
- 2007-08-29 AT AT07826193T patent/ATE532211T1/de active
- 2007-08-29 CN CN2007800316055A patent/CN101529568B/zh active Active
- 2007-08-29 EP EP07826193A patent/EP2062291B1/de active Active
- 2007-08-29 US US12/439,363 patent/US8026146B2/en active Active
- 2007-08-29 WO PCT/IB2007/053476 patent/WO2008026175A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| EP2062291A1 (de) | 2009-05-27 |
| WO2008026175A1 (en) | 2008-03-06 |
| EP2062291B1 (de) | 2011-11-02 |
| US8026146B2 (en) | 2011-09-27 |
| CN101529568B (zh) | 2011-06-22 |
| US20100022056A1 (en) | 2010-01-28 |
| CN101529568A (zh) | 2009-09-09 |
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