ATE497241T1 - Verfahren und vorrichtung zum erkennen des beginns einer thermischen relaxation in magnetischen datenspeichern - Google Patents
Verfahren und vorrichtung zum erkennen des beginns einer thermischen relaxation in magnetischen datenspeichernInfo
- Publication number
- ATE497241T1 ATE497241T1 AT03758590T AT03758590T ATE497241T1 AT E497241 T1 ATE497241 T1 AT E497241T1 AT 03758590 T AT03758590 T AT 03758590T AT 03758590 T AT03758590 T AT 03758590T AT E497241 T1 ATE497241 T1 AT E497241T1
- Authority
- AT
- Austria
- Prior art keywords
- bits
- elements
- data storage
- magnetization
- detecting
- Prior art date
Links
- 238000013500 data storage Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title 1
- 230000005415 magnetization Effects 0.000 abstract 3
- 238000001514 detection method Methods 0.000 abstract 1
- 230000011664 signaling Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5002—Characteristic
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
- Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
- Magnetic Record Carriers (AREA)
- Recording Or Reproducing By Magnetic Means (AREA)
- Soft Magnetic Materials (AREA)
- Measurement And Recording Of Electrical Phenomena And Electrical Characteristics Of The Living Body (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02080007 | 2002-11-28 | ||
| PCT/IB2003/005018 WO2004049343A1 (en) | 2002-11-28 | 2003-11-06 | A method and device to detect the likely onset of thermal relaxation in magnetic data storage devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE497241T1 true ATE497241T1 (de) | 2011-02-15 |
Family
ID=32338130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT03758590T ATE497241T1 (de) | 2002-11-28 | 2003-11-06 | Verfahren und vorrichtung zum erkennen des beginns einer thermischen relaxation in magnetischen datenspeichern |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US8014192B2 (de) |
| EP (1) | EP1568038B1 (de) |
| JP (1) | JP2006511001A (de) |
| KR (1) | KR20050087808A (de) |
| CN (1) | CN1717744B (de) |
| AT (1) | ATE497241T1 (de) |
| AU (1) | AU2003274616A1 (de) |
| DE (1) | DE60335904D1 (de) |
| TW (1) | TW200415590A (de) |
| WO (1) | WO2004049343A1 (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7733729B2 (en) | 2004-04-01 | 2010-06-08 | Nxp B.V. | Thermally stable reference voltage generator for MRAM |
| TWI279798B (en) * | 2005-08-04 | 2007-04-21 | Ind Tech Res Inst | Magnetoresistive memory arrays |
| JP4945592B2 (ja) * | 2009-03-13 | 2012-06-06 | 株式会社東芝 | 半導体記憶装置 |
| US8374052B2 (en) | 2009-05-08 | 2013-02-12 | Samsung Electronics Co., Ltd. | Information storage devices using magnetic domain wall movement and methods of operating the same |
| US9170879B2 (en) * | 2009-06-24 | 2015-10-27 | Headway Technologies, Inc. | Method and apparatus for scrubbing accumulated data errors from a memory system |
| JP6015761B2 (ja) * | 2012-08-30 | 2016-10-26 | 富士通株式会社 | 磁性体のシミュレーションプログラム、シミュレーション装置及びシミュレーション方法 |
| KR102152774B1 (ko) | 2013-03-07 | 2020-09-07 | 삼성전자 주식회사 | 반도체 소자 시뮬레이션 시스템 및 이를 이용한 시뮬레이션 방법 |
| KR102507269B1 (ko) | 2016-03-29 | 2023-03-07 | 삼성전자주식회사 | 생체 정보를 이용하여 보안성을 높일 수 있는 센서, 상기 센서를 포함하는 모바일 장치, 및 상기 모바일 장치의 인증 방법 |
| US10672832B2 (en) * | 2017-11-08 | 2020-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Magnetic detection circuit, MRAM and operation method thereof |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5068826A (en) * | 1990-01-18 | 1991-11-26 | Microunity Systems Engineering | Hall effect semiconductor memory cell |
| US6166948A (en) * | 1999-09-03 | 2000-12-26 | International Business Machines Corporation | Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers |
| US6185143B1 (en) | 2000-02-04 | 2001-02-06 | Hewlett-Packard Company | Magnetic random access memory (MRAM) device including differential sense amplifiers |
| JP4309075B2 (ja) * | 2000-07-27 | 2009-08-05 | 株式会社東芝 | 磁気記憶装置 |
| US6724674B2 (en) * | 2000-11-08 | 2004-04-20 | International Business Machines Corporation | Memory storage device with heating element |
| US6426907B1 (en) * | 2001-01-24 | 2002-07-30 | Infineon Technologies North America Corp. | Reference for MRAM cell |
| JP2002314048A (ja) * | 2001-04-18 | 2002-10-25 | Canon Inc | 強磁性体不揮発性メモリおよびそのリフレッシュ方法 |
| US6839271B1 (en) * | 2003-10-15 | 2005-01-04 | Hewlett-Packard Development Company, L.P. | Magnetic memory device |
-
2003
- 2003-11-06 US US10/536,291 patent/US8014192B2/en active Active
- 2003-11-06 WO PCT/IB2003/005018 patent/WO2004049343A1/en not_active Ceased
- 2003-11-06 AT AT03758590T patent/ATE497241T1/de not_active IP Right Cessation
- 2003-11-06 JP JP2004554755A patent/JP2006511001A/ja not_active Withdrawn
- 2003-11-06 AU AU2003274616A patent/AU2003274616A1/en not_active Abandoned
- 2003-11-06 KR KR1020057009561A patent/KR20050087808A/ko not_active Ceased
- 2003-11-06 DE DE60335904T patent/DE60335904D1/de not_active Expired - Lifetime
- 2003-11-06 CN CN200380104337.7A patent/CN1717744B/zh not_active Expired - Fee Related
- 2003-11-06 EP EP03758590A patent/EP1568038B1/de not_active Expired - Lifetime
- 2003-11-25 TW TW092133030A patent/TW200415590A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN1717744B (zh) | 2012-09-26 |
| US8014192B2 (en) | 2011-09-06 |
| EP1568038A1 (de) | 2005-08-31 |
| AU2003274616A1 (en) | 2004-06-18 |
| CN1717744A (zh) | 2006-01-04 |
| WO2004049343A1 (en) | 2004-06-10 |
| TW200415590A (en) | 2004-08-16 |
| US20060018148A1 (en) | 2006-01-26 |
| DE60335904D1 (de) | 2011-03-10 |
| JP2006511001A (ja) | 2006-03-30 |
| EP1568038B1 (de) | 2011-01-26 |
| KR20050087808A (ko) | 2005-08-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |