ATE497641T1 - Organische halbleiterzusammensetzungen mit nanopartikeln - Google Patents

Organische halbleiterzusammensetzungen mit nanopartikeln

Info

Publication number: ATE497641T1
Authority: AT; Austria
Prior art keywords: nanoparticles; organic semiconductor; semiconductor compositions; electrodes; medium
Prior art date: 2006-06-12

Application number

AT07809401T

Other languages

English (en)

Inventor

Oleksandr Sydorenko

Subramanian Vaidyanathan

Original Assignee

Alcatel Lucent Usa Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2006-06-12

Filing date

2007-06-08

Publication date

2011-02-15

2007-06-08 Application filed by Alcatel Lucent Usa Inc filed Critical Alcatel Lucent Usa Inc

2011-02-15 Application granted granted Critical

2011-02-15 Publication of ATE497641T1 publication Critical patent/ATE497641T1/de

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Thin Film Transistor (AREA)
Luminescent Compositions (AREA)
Electroluminescent Light Sources (AREA)

AT07809401T 2006-06-12 2007-06-08 Organische halbleiterzusammensetzungen mit nanopartikeln ATE497641T1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US11/423,555 US8164087B2 (en)	2006-06-12	2006-06-12	Organic semiconductor compositions with nanoparticles
PCT/US2007/013513 WO2007146127A2 (en)	2006-06-12	2007-06-08	Organic semiconductor compositions with nanoparticles

Publications (1)

Publication Number	Publication Date
ATE497641T1 true ATE497641T1 (de)	2011-02-15

Family

ID=38670646

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT07809401T ATE497641T1 (de)	2006-06-12	2007-06-08	Organische halbleiterzusammensetzungen mit nanopartikeln

Country Status (8)

Country	Link
US (2)	US8164087B2 (de)
EP (1)	EP2033241B1 (de)
JP (2)	JP5665315B2 (de)
KR (1)	KR101050617B1 (de)
CN (1)	CN101467277B (de)
AT (1)	ATE497641T1 (de)
DE (1)	DE602007012349D1 (de)
WO (1)	WO2007146127A2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US8164087B2 (en)	2006-06-12	2012-04-24	Alcatel Lucent	Organic semiconductor compositions with nanoparticles
US8012564B2 (en)	2006-07-24	2011-09-06	Alcatel Lucent	Nanoparticle dispersions with low aggregation levels
WO2008100568A1 (en)	2007-02-17	2008-08-21	Nanogram Corporation	Functional composites, functional inks and applications thereof
JP5369516B2 (ja) *	2008-06-30	2013-12-18	ソニー株式会社	電子デバイス及びその製造方法、並びに、半導体装置及びその製造方法
JP5513772B2 (ja) *	2009-05-25	2014-06-04	独立行政法人科学技術振興機構	ポリシルセスキオキサン薄膜への有機半導体膜の製膜方法
JP5737849B2 (ja) *	2010-03-02	2015-06-17	地方独立行政法人大阪市立工業研究所	有機半導体膜の製造方法及び有機トランジスタ
CN102259832A (zh) *	2010-05-27	2011-11-30	清华大学	三维纳米结构阵列的制备方法
JP6281816B2 (ja) *	2014-03-14	2018-02-21	国立大学法人山形大学	半導体層の形成方法
CN106206947A (zh) *	2016-09-23	2016-12-07	深圳大学	一种有机场效应晶体管及其制备方法
CN107527999B (zh) *	2017-08-25	2020-03-31	京东方科技集团股份有限公司	半导体混合材料及其制备方法、薄膜晶体管以及电子装置
CN116686423A (zh) *	2021-02-10	2023-09-01	高峰	器件传输材料组合物的制备方法、组合物、包含其的传输层和包含传输层的电子器件

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GB9815271D0 (en) *	1998-07-14	1998-09-09	Cambridge Display Tech Ltd	Particles and devices comprising particles
US6617583B1 (en) *	1998-09-18	2003-09-09	Massachusetts Institute Of Technology	Inventory control
US6797412B1 (en) *	2000-04-11	2004-09-28	University Of Connecticut	Full color display structures using pseudomorphic cladded quantum dot nanophosphor thin films
EP1195417B1 (de) *	2000-10-05	2009-10-14	Evonik Degussa GmbH	Siliciumorganische Nanokapseln
GB0028867D0 (en) *	2000-11-28	2001-01-10	Avecia Ltd	Field effect translators,methods for the manufacture thereof and materials therefor
IL146226A0 (en) *	2001-10-29	2002-12-01	Yissum Res Dev Co	Near infra-red composite polymer-nanocrystal materials and electro-optical devices produced therefrom
AU2003217546A1 (en) *	2002-02-19	2003-09-09	Photon-X, Inc.	Polymer nanocomposites for optical applications
JP4736324B2 (ja) *	2002-04-22	2011-07-27	コニカミノルタホールディングス株式会社	半導体素子及びその製造方法
DE10219121A1 (de) *	2002-04-29	2003-11-27	Infineon Technologies Ag	Siliziumpartikel als Additive zur Verbesserung der Ladungsträgermobilität in organischen Halbleitern
JP4635410B2 (ja) *	2002-07-02	2011-02-23	ソニー株式会社	半導体装置及びその製造方法
US6737364B2 (en) *	2002-10-07	2004-05-18	International Business Machines Corporation	Method for fabricating crystalline-dielectric thin films and devices formed using same
JP4545373B2 (ja) *	2002-11-07	2010-09-15	旭化成株式会社	有機半導体薄膜及びその製造方法
KR100572926B1 (ko) *	2002-12-26	2006-04-24	삼성전자주식회사	폴리티에닐티아졸 유도체 및 이를 이용한 유기박막트랜지스터
US20050095448A1 (en) *	2003-11-04	2005-05-05	Katz Howard E.	Layer incorporating particles with a high dielectric constant
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US8592680B2 (en)	2004-08-11	2013-11-26	The Trustees Of Princeton University	Organic photosensitive devices
US20060060839A1 (en) *	2004-09-22	2006-03-23	Chandross Edwin A	Organic semiconductor composition
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US7498662B2 (en) *	2005-11-18	2009-03-03	3M Innovative Properties Company	Dielectric media including surface-treated metal oxide particles
US8164087B2 (en)	2006-06-12	2012-04-24	Alcatel Lucent	Organic semiconductor compositions with nanoparticles

2006
- 2006-06-12 US US11/423,555 patent/US8164087B2/en not_active Expired - Fee Related
2007
- 2007-06-08 AT AT07809401T patent/ATE497641T1/de not_active IP Right Cessation
- 2007-06-08 WO PCT/US2007/013513 patent/WO2007146127A2/en not_active Ceased
- 2007-06-08 CN CN2007800216856A patent/CN101467277B/zh not_active Expired - Fee Related
- 2007-06-08 JP JP2009515430A patent/JP5665315B2/ja not_active Expired - Fee Related
- 2007-06-08 EP EP07809401A patent/EP2033241B1/de not_active Not-in-force
- 2007-06-08 KR KR1020087030133A patent/KR101050617B1/ko not_active Expired - Fee Related
- 2007-06-08 DE DE602007012349T patent/DE602007012349D1/de active Active
2012
- 2012-03-14 US US13/420,256 patent/US8450143B2/en not_active Expired - Fee Related
2014
- 2014-02-10 JP JP2014023115A patent/JP5847214B2/ja not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JP2014116635A (ja)	2014-06-26
EP2033241B1 (de)	2011-02-02
US8164087B2 (en)	2012-04-24
EP2033241A2 (de)	2009-03-11
DE602007012349D1 (de)	2011-03-17
WO2007146127A3 (en)	2008-02-21
US8450143B2 (en)	2013-05-28
US20120171811A1 (en)	2012-07-05
CN101467277B (zh)	2013-01-02
WO2007146127A2 (en)	2007-12-21
JP2009540605A (ja)	2009-11-19
KR20090018112A (ko)	2009-02-19
KR101050617B1 (ko)	2011-07-19
US20070284570A1 (en)	2007-12-13
CN101467277A (zh)	2009-06-24
JP5847214B2 (ja)	2016-01-20
JP5665315B2 (ja)	2015-02-04

Legal Events

Date	Code	Title	Description
2011-08-15	RER	Ceased as to paragraph 5 lit. 3 law introducing patent treaties

Publication	Publication Date	Title
ATE497641T1 (de)	2011-02-15	Organische halbleiterzusammensetzungen mit nanopartikeln
TW200715562A (en)	2007-04-16	Thin film transistor substrate and fabrication thereof
ATE555503T1 (de)	2012-05-15	Feldeffekttransistor und verfahren zu seiner herstellung
TW200715566A (en)	2007-04-16	Display device and method of manufacturing the same
JP2010157636A5 (de)	2011-05-12
WO2008126490A1 (ja)	2008-10-23	半導体装置およびその製造方法
TW200729570A (en)	2007-08-01	Transistor, organic semiconductor device, and method for manufacturing the transistor or device
ATE526686T1 (de)	2011-10-15	Dünnschicht-feldeffekttransistor und anzeige
DE602008003796D1 (de)	2011-01-13	Tors mit einem oxidhalbleiter
JP2011124560A5 (de)	2013-10-10
ATE550785T1 (de)	2012-04-15	Halbleitervorrichtung mit einem feldeffekttransistor
JP2009188223A5 (de)	2011-02-03
JP2015114460A5 (de)	2017-01-12
JP2008091680A5 (de)	2009-08-20
JP2012080092A5 (de)	2014-07-31
TW200734780A (en)	2007-09-16	Display device and manufacturing method therefor
EP2117048A3 (de)	2010-03-31	Dünnschichttransistor, Herstellungsverfahren dafür und organische LED-Anzeigevorrichtung damit
TW200610206A (en)	2006-03-16	Organic thin film transistor and substrate including the same
TW200727492A (en)	2007-07-16	Organic thin film transistor array panel
SE0800764L (sv)	2009-10-05	Insulated gate field effect transistor in series with a junction field effect transistor
TW200633209A (en)	2006-09-16	Semiconductor device having transistor with vertical gate electrode and method of fabricating the same
TW200707750A (en)	2007-02-16	Flat panel display and manufacturing method of flat panel display
TW200725912A (en)	2007-07-01	Organic thin film transistor and method for manufacturing the same
TW200943532A (en)	2009-10-16	Semiconductor device and fabrication process thereof
JP2015012048A5 (de)	2016-08-04