SE0800764L - Insulated gate field effect transistor in series with a junction field effect transistor - Google Patents

Insulated gate field effect transistor in series with a junction field effect transistor

Info

Publication number
SE0800764L
SE0800764L SE0800764A SE0800764A SE0800764L SE 0800764 L SE0800764 L SE 0800764L SE 0800764 A SE0800764 A SE 0800764A SE 0800764 A SE0800764 A SE 0800764A SE 0800764 L SE0800764 L SE 0800764L
Authority
SE
Sweden
Prior art keywords
field effect
effect transistor
insulated gate
series
gate field
Prior art date
Application number
SE0800764A
Other languages
English (en)
Other versions
SE533026C2 (sv
Inventor
Klas-Haakan Eklund
Original Assignee
Klas-Haakan Eklund
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Klas-Haakan Eklund filed Critical Klas-Haakan Eklund
Priority to SE0800764A priority Critical patent/SE533026C2/sv
Priority to EP09726572A priority patent/EP2260514A4/en
Priority to JP2011502901A priority patent/JP5449319B2/ja
Priority to US12/667,088 priority patent/US8264015B2/en
Priority to ES15161312.2T priority patent/ES2660471T3/es
Priority to EP15161312.2A priority patent/EP2916359B1/en
Priority to PCT/SE2009/050350 priority patent/WO2009123559A1/en
Publication of SE0800764L publication Critical patent/SE0800764L/sv
Publication of SE533026C2 publication Critical patent/SE533026C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/832—Thin-film junction FETs [JFET]
    • H01L29/7801—
    • H01L29/8086—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
SE0800764A 2008-04-04 2008-04-04 Fälteffekttransistor med isolerad gate seriekopplad med en JFET SE533026C2 (sv)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SE0800764A SE533026C2 (sv) 2008-04-04 2008-04-04 Fälteffekttransistor med isolerad gate seriekopplad med en JFET
EP09726572A EP2260514A4 (en) 2008-04-04 2009-04-03 SEMICONDUCTOR DEVICE COMPRISING A FIRST FIELD EFFECT TRANSISTOR ASSOCIATED IN SERIES WITH A SECOND FIELD EFFECT TRANSISTOR
JP2011502901A JP5449319B2 (ja) 2008-04-04 2009-04-03 第１絶縁ゲート電界効果トランジスタが第２電界効果トランジスタと直列に接続された半導体デバイス
US12/667,088 US8264015B2 (en) 2008-04-04 2009-04-03 Semiconductor device wherein a first insulated gate field effect transistor is connected in series with a second field effect transistor
ES15161312.2T ES2660471T3 (es) 2008-04-04 2009-04-03 Dispositivo de transistor bipolar de compuerta aislada que comprende un transistor de efecto de campo de compuerta aislado conectado en serie con un transistor de efecto de campo de ensamblaje que tiene un contacto de drenaje modificado
EP15161312.2A EP2916359B1 (en) 2008-04-04 2009-04-03 Insulated gate bipolar transistor device comprising an insulated gate field effect transistor connected in series with a junction field effect transistor having a modified drain contact
PCT/SE2009/050350 WO2009123559A1 (en) 2008-04-04 2009-04-03 A semiconductor device wherein a first insulated gate field effect transistor is connected in series with a second field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0800764A SE533026C2 (sv) 2008-04-04 2008-04-04 Fälteffekttransistor med isolerad gate seriekopplad med en JFET

Publications (2)

Publication Number Publication Date
SE0800764L true SE0800764L (sv) 2009-10-05
SE533026C2 SE533026C2 (sv) 2010-06-08

Family

ID=41135815

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0800764A SE533026C2 (sv) 2008-04-04 2008-04-04 Fälteffekttransistor med isolerad gate seriekopplad med en JFET

Country Status (6)

Country Link
US (1) US8264015B2 (sv)
EP (2) EP2260514A4 (sv)
JP (1) JP5449319B2 (sv)
ES (1) ES2660471T3 (sv)
SE (1) SE533026C2 (sv)
WO (1) WO2009123559A1 (sv)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
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US8344472B2 (en) * 2010-03-30 2013-01-01 Freescale Semiconductor, Inc. Semiconductor device and method
US9105493B2 (en) * 2012-05-21 2015-08-11 United Microelectronics Corp. High voltage metal-oxide-semiconductor transistor device and layout pattern thereof
US20130320445A1 (en) * 2012-06-04 2013-12-05 Ming-Tsung Lee High voltage metal-oxide-semiconductor transistor device
SE537230C2 (sv) * 2013-05-16 2015-03-10 Klas Håkan Eklund Med K Eklund Innovation F Bipolär transistorförstärkarkrets med isolerad gate
US9543290B2 (en) * 2014-01-23 2017-01-10 International Business Machines Corporation Normally-off junction field-effect transistors and application to complementary circuits
US9269808B2 (en) 2014-02-21 2016-02-23 Vanguard International Semiconductor Corporation Method and apparatus for power device with depletion structure
US9306034B2 (en) 2014-02-24 2016-04-05 Vanguard International Semiconductor Corporation Method and apparatus for power device with multiple doped regions
US9608107B2 (en) 2014-02-27 2017-03-28 Vanguard International Semiconductor Corporation Method and apparatus for MOS device with doped region
SE542311C2 (en) 2018-03-16 2020-04-07 Klas Haakan Eklund Med Firma K Eklund Innovation A semiconductor device comprising a low voltage insulated gate field effect transistor connected in series with a high voltage field effect transistor
US11031480B2 (en) 2019-09-13 2021-06-08 K. Eklund Innovation Semiconductor device, comprising an insulated gate field effect transistor connected in series with a field effect transistor
US11837658B1 (en) * 2022-06-21 2023-12-05 K. Eklund Innovation Semiconductor device comprising a lateral super junction field effect transistor

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Also Published As

Publication number Publication date
EP2260514A4 (en) 2012-11-21
JP2011517511A (ja) 2011-06-09
EP2260514A1 (en) 2010-12-15
WO2009123559A1 (en) 2009-10-08
JP5449319B2 (ja) 2014-03-19
SE533026C2 (sv) 2010-06-08
ES2660471T3 (es) 2018-03-22
US8264015B2 (en) 2012-09-11
EP2916359B1 (en) 2017-12-13
US20100327330A1 (en) 2010-12-30
EP2916359A1 (en) 2015-09-09

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