ATE498901T1 - Endpunkterkennung für die atzung von photomasken - Google Patents

Endpunkterkennung für die atzung von photomasken

Info

Publication number
ATE498901T1
ATE498901T1 AT07021045T AT07021045T ATE498901T1 AT E498901 T1 ATE498901 T1 AT E498901T1 AT 07021045 T AT07021045 T AT 07021045T AT 07021045 T AT07021045 T AT 07021045T AT E498901 T1 ATE498901 T1 AT E498901T1
Authority
AT
Austria
Prior art keywords
endpoint detection
etching
photomask
support member
substrate support
Prior art date
Application number
AT07021045T
Other languages
English (en)
Inventor
Michael Grimbergen
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/844,868 external-priority patent/US20080099436A1/en
Priority claimed from US11/844,838 external-priority patent/US20080099435A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE498901T1 publication Critical patent/ATE498901T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Weting (AREA)
AT07021045T 2006-10-30 2007-10-26 Endpunkterkennung für die atzung von photomasken ATE498901T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US86349006P 2006-10-30 2006-10-30
US11/844,868 US20080099436A1 (en) 2006-10-30 2007-08-24 Endpoint detection for photomask etching
US11/844,838 US20080099435A1 (en) 2006-10-30 2007-08-24 Endpoint detection for photomask etching
US96932807P 2007-08-31 2007-08-31

Publications (1)

Publication Number Publication Date
ATE498901T1 true ATE498901T1 (de) 2011-03-15

Family

ID=39279419

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07021045T ATE498901T1 (de) 2006-10-30 2007-10-26 Endpunkterkennung für die atzung von photomasken

Country Status (7)

Country Link
EP (2) EP1926125B1 (de)
JP (1) JP5441332B2 (de)
KR (1) KR100932574B1 (de)
CN (2) CN104614932A (de)
AT (1) ATE498901T1 (de)
DE (1) DE602007012503D1 (de)
TW (1) TWI388936B (de)

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US9347132B2 (en) * 2011-04-29 2016-05-24 Applied Materials, Inc. Optical endpoint detection system
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US8900469B2 (en) * 2011-12-19 2014-12-02 Applied Materials, Inc. Etch rate detection for anti-reflective coating layer and absorber layer etching
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CN103472542B (zh) * 2013-09-13 2016-01-20 河南仕佳光子科技有限公司 用于定位光纤阵列的梯形槽的制作方法
US9299614B2 (en) * 2013-12-10 2016-03-29 Applied Materials, Inc. Method and carrier for dicing a wafer
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CN107546141B (zh) * 2016-06-28 2020-12-04 中微半导体设备(上海)股份有限公司 监测等离子体工艺制程的装置和方法
CN107644811B (zh) * 2016-07-20 2020-05-22 中微半导体设备(上海)股份有限公司 博世工艺的刻蚀终点监测方法以及博世刻蚀方法
CN107993946B (zh) * 2016-10-27 2020-11-20 中微半导体设备(上海)股份有限公司 宽带光谱光学测量装置及等离子体处理装置
JP6820717B2 (ja) * 2016-10-28 2021-01-27 株式会社日立ハイテク プラズマ処理装置
JP6808596B2 (ja) * 2017-03-10 2021-01-06 キオクシア株式会社 センシングシステム
US11022877B2 (en) 2017-03-13 2021-06-01 Applied Materials, Inc. Etch processing system having reflective endpoint detection
KR101966806B1 (ko) * 2017-09-01 2019-04-09 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN108461412A (zh) * 2018-03-22 2018-08-28 北京北方华创微电子装备有限公司 在线监测系统及半导体加工设备
TWI659258B (zh) * 2018-05-23 2019-05-11 亞智科技股份有限公司 蝕刻時間偵測方法及蝕刻時間偵測系統
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KR102833948B1 (ko) * 2018-11-22 2025-07-15 삼성전자주식회사 기판 처리 장치, 기판 처리 방법 및 이를 이용한 반도체 소자의 제조 방법
CN114008524B (zh) * 2019-06-05 2026-05-12 应用材料公司 用于平坦光学装置的孔
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CN113447243B (zh) * 2020-05-26 2023-03-10 重庆康佳光电技术研究院有限公司 一种终点检测装置、蚀刻设备以及检测方法
CN111975191B (zh) * 2020-08-17 2023-01-24 北京中科镭特电子有限公司 一种加工腔组件及激光加工装置
CN112078237B (zh) * 2020-08-25 2022-05-27 北京黎马敦太平洋包装有限公司 一种具有自动烫印质量检测装置的烫印系统
US11803118B2 (en) * 2021-04-12 2023-10-31 Applied Materials, Inc. Methods and apparatus for photomask processing
WO2022245716A1 (en) * 2021-05-20 2022-11-24 Applied Materials, Inc. In situ film grouwth sensor assembly, apparatus, and methods
US11965798B2 (en) * 2021-06-10 2024-04-23 Applied Materials, Inc. Endpoint detection system for enhanced spectral data collection
CN115097570B (zh) * 2022-08-22 2023-04-07 上海羲禾科技有限公司 一种波导的刻蚀方法
CN115565917A (zh) * 2022-11-07 2023-01-03 长鑫存储技术有限公司 终点检测窗及刻蚀反应腔体
CN118053776A (zh) * 2022-11-16 2024-05-17 江苏鲁汶仪器股份有限公司 一种终点检测装置及离子束刻蚀系统
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Also Published As

Publication number Publication date
KR100932574B1 (ko) 2009-12-17
DE602007012503D1 (de) 2011-03-31
EP2309533A1 (de) 2011-04-13
CN101174082A (zh) 2008-05-07
JP5441332B2 (ja) 2014-03-12
CN104614932A (zh) 2015-05-13
EP1926125B1 (de) 2011-02-16
JP2008112167A (ja) 2008-05-15
EP1926125A1 (de) 2008-05-28
KR20080039251A (ko) 2008-05-07
TW200844667A (en) 2008-11-16
TWI388936B (zh) 2013-03-11

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