ATE498902T1 - Verfahren zur herstellung eines zno-dünnfilms bei niedrigen temperaturen - Google Patents

Verfahren zur herstellung eines zno-dünnfilms bei niedrigen temperaturen

Info

Publication number
ATE498902T1
ATE498902T1 AT06005550T AT06005550T ATE498902T1 AT E498902 T1 ATE498902 T1 AT E498902T1 AT 06005550 T AT06005550 T AT 06005550T AT 06005550 T AT06005550 T AT 06005550T AT E498902 T1 ATE498902 T1 AT E498902T1
Authority
AT
Austria
Prior art keywords
thin film
zinc oxide
oxide thin
substrate
producing
Prior art date
Application number
AT06005550T
Other languages
English (en)
Inventor
Takashi Matsumoto
Chitake Imazu
Shigeru Hagihara
Kazuhiro Kijima
Osamu Abe
Satoshi Hiraki
Yuichiro Fujikawa
Original Assignee
Univ Yamanashi
Yamanashi Prefecture
Nakaya Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Yamanashi, Yamanashi Prefecture, Nakaya Ltd filed Critical Univ Yamanashi
Application granted granted Critical
Publication of ATE498902T1 publication Critical patent/ATE498902T1/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/1266—O, S, or organic compound in metal component
    • Y10T428/12667—Oxide of transition metal or Al

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Glass Compositions (AREA)
AT06005550T 2005-08-18 2006-03-17 Verfahren zur herstellung eines zno-dünnfilms bei niedrigen temperaturen ATE498902T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005237141 2005-08-18

Publications (1)

Publication Number Publication Date
ATE498902T1 true ATE498902T1 (de) 2011-03-15

Family

ID=36581936

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06005550T ATE498902T1 (de) 2005-08-18 2006-03-17 Verfahren zur herstellung eines zno-dünnfilms bei niedrigen temperaturen

Country Status (7)

Country Link
US (1) US7744965B2 (de)
EP (1) EP1755154B1 (de)
JP (1) JP5396579B2 (de)
KR (1) KR20080037716A (de)
AT (1) ATE498902T1 (de)
DE (1) DE602006020093D1 (de)
WO (1) WO2007020729A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4296523B2 (ja) 2007-09-28 2009-07-15 勝 堀 プラズマ発生装置
US8147599B2 (en) 2009-02-17 2012-04-03 Mcalister Technologies, Llc Apparatuses and methods for storing and/or filtering a substance
KR101384404B1 (ko) * 2011-05-13 2014-04-10 강원대학교산학협력단 산화아연 나노시트 생성방법
WO2014145882A1 (en) * 2013-03-15 2014-09-18 Mcalister Technologies, Llc Methods of manufacture of engineered materials and devices
WO2014194124A1 (en) 2013-05-29 2014-12-04 Mcalister Technologies, Llc Methods for fuel tank recycling and net hydrogen fuel and carbon goods production along with associated apparatus and systems
JP6306437B2 (ja) * 2014-05-31 2018-04-04 国立大学法人山梨大学 縦型成膜装置
EP4258325A3 (de) 2018-06-07 2024-01-24 Silanna UV Technologies Pte Ltd Verfahren und materialabscheidungssysteme zur bildung von halbleiterschichten
CN109402566B (zh) * 2018-12-18 2021-03-26 深圳先进技术研究院 一种两步法制备柔性氧化钒薄膜的方法
US11512389B2 (en) 2019-03-20 2022-11-29 Samsung Electronincs Co., Ltd. Apparatus for and method of manufacturing semiconductor device
GB201913533D0 (en) * 2019-09-19 2019-11-06 Univ Southampton Optical thin films and fabrication thereof
KR102336228B1 (ko) * 2020-04-06 2021-12-09 티오에스주식회사 챔버 분리형 에피 성장 장치
CN116479398B (zh) * 2023-04-28 2025-08-15 深圳市金鑫丰利珠宝首饰有限公司 一种金刚石薄膜及其制备方法

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US5811050A (en) * 1994-06-06 1998-09-22 Gabower; John F. Electromagnetic interference shield for electronic devices
US6110544A (en) * 1997-06-26 2000-08-29 General Electric Company Protective coating by high rate arc plasma deposition
JP3424814B2 (ja) * 1999-08-31 2003-07-07 スタンレー電気株式会社 ＺｎＯ結晶構造及びそれを用いた半導体装置
JP3953238B2 (ja) 1999-09-01 2007-08-08 独立行政法人科学技術振興機構 強磁性ｐ型単結晶酸化亜鉛およびその製造方法
JP2001271167A (ja) 2000-03-24 2001-10-02 Okura Ind Co Ltd 酸化亜鉛薄膜の形成方法
JP2002020884A (ja) * 2000-07-04 2002-01-23 Canon Inc 酸化亜鉛積層薄膜体およびその製造方法
JP3904378B2 (ja) 2000-08-02 2007-04-11 ローム株式会社 酸化亜鉛透明導電膜
WO2002016679A1 (en) * 2000-08-18 2002-02-28 Tohoku Techno Arch Co., Ltd. Polycrystalline semiconductor material and method of manufacture thereof
JP4447756B2 (ja) * 2000-08-28 2010-04-07 独立行政法人産業技術総合研究所 ラジカルセル装置およびｉｉ−ｖｉ族化合物半導体装置の製法
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JP2005237141A (ja) 2004-02-20 2005-09-02 Toyota Motor Corp インバータおよびインバータの製造方法
JP5291928B2 (ja) * 2007-12-26 2013-09-18 株式会社日立製作所 酸化物半導体装置およびその製造方法

Also Published As

Publication number Publication date
US7744965B2 (en) 2010-06-29
US20070042216A1 (en) 2007-02-22
EP1755154A1 (de) 2007-02-21
JP5396579B2 (ja) 2014-01-22
KR20080037716A (ko) 2008-04-30
EP1755154B1 (de) 2011-02-16
JPWO2007020729A1 (ja) 2009-02-19
DE602006020093D1 (de) 2011-03-31
WO2007020729A1 (ja) 2007-02-22

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