ATE498911T1 - Verfahren zur herstellung einer stabilen durchsichtigen elektrode - Google Patents
Verfahren zur herstellung einer stabilen durchsichtigen elektrodeInfo
- Publication number
- ATE498911T1 ATE498911T1 AT08157959T AT08157959T ATE498911T1 AT E498911 T1 ATE498911 T1 AT E498911T1 AT 08157959 T AT08157959 T AT 08157959T AT 08157959 T AT08157959 T AT 08157959T AT E498911 T1 ATE498911 T1 AT E498911T1
- Authority
- AT
- Austria
- Prior art keywords
- metal film
- thin metal
- ultra thin
- producing
- transparent electrode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/833—Transparent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
- Non-Insulated Conductors (AREA)
- Liquid Crystal (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08157959A EP2133921B8 (de) | 2008-06-10 | 2008-06-10 | Verfahren zur Herstellung einer stabilen durchsichtigen Elektrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE498911T1 true ATE498911T1 (de) | 2011-03-15 |
Family
ID=39929582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT08157959T ATE498911T1 (de) | 2008-06-10 | 2008-06-10 | Verfahren zur herstellung einer stabilen durchsichtigen elektrode |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8623153B2 (de) |
| EP (1) | EP2133921B8 (de) |
| KR (1) | KR101621571B1 (de) |
| CN (1) | CN102105989B (de) |
| AT (1) | ATE498911T1 (de) |
| DE (1) | DE602008005000D1 (de) |
| ES (1) | ES2361212T3 (de) |
| WO (1) | WO2009150169A1 (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2581789B1 (de) | 2011-10-14 | 2020-04-29 | Fundació Institut de Ciències Fotòniques | Optisch transparente und elektrisch leitfähige Beschichtungen und Verfahren zu ihrer Ablagerung auf einem Substrat |
| US9023457B2 (en) | 2011-11-30 | 2015-05-05 | Corning Incorporated | Textured surfaces and methods of making and using same |
| US9296183B2 (en) | 2011-11-30 | 2016-03-29 | Corning Incorporated | Metal dewetting methods and articles produced thereby |
| US20160002096A1 (en) | 2014-07-02 | 2016-01-07 | Corning Incorporated | Silicon and silica nanostructures and method of making silicon and silica nanostructures |
| US9506890B2 (en) | 2014-12-16 | 2016-11-29 | Eastman Chemical Company | Physical vapor deposited biosensor components |
| CN105449106B (zh) * | 2015-12-28 | 2018-10-23 | 中国科学院重庆绿色智能技术研究院 | 一种基于超薄金属的透明电极及其制备方法 |
| WO2017218197A1 (en) | 2016-06-15 | 2017-12-21 | Eastman Chemical Company | Physical vapor deposited biosensor components |
| CN109689880B (zh) | 2016-09-16 | 2022-12-13 | 伊士曼化工公司 | 通过物理气相沉积制备的生物传感器电极 |
| WO2018052711A1 (en) | 2016-09-16 | 2018-03-22 | Eastman Chemical Company | Biosensor electrodes prepared by physical vapor deposition |
| EP3642605B1 (de) | 2017-06-22 | 2026-04-15 | Eastman Chemical Company | Physikalisch dampfabgeschiedene elektrode für elektrochemische sensoren |
| US12351899B2 (en) | 2021-05-28 | 2025-07-08 | Corning Incorporated | Transparent article with a body and metal oxide disposed directly on the body, facilitating deposition of an electrically conductive and transparent ultra-thin metal film of a noble metal, and method of forming the same |
| KR102667756B1 (ko) | 2021-10-18 | 2024-05-20 | 성균관대학교산학협력단 | 고분자 보호층을 포함하는 다층 투명 전극 및 이의 제조방법 |
| CN116334546B (zh) * | 2023-05-26 | 2023-10-20 | 江西兆驰半导体有限公司 | 一种电子束蒸镀超薄Ni金属的方法及倒装LED芯片 |
| CN116770229A (zh) * | 2023-07-19 | 2023-09-19 | 中国人民解放军国防科技大学 | 一种在范德华衬底上制备超平整金属薄膜的方法和一种超平整金属薄膜 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1054454A3 (de) * | 1999-05-18 | 2004-04-21 | Nippon Sheet Glass Co., Ltd. | Glasscheibe mit einer leitfähigen Schicht, ihr Herstellungsverfahren und Photoelektrische Umwandlungsvorrichtung, die sie anwendet |
| US6391724B1 (en) * | 1999-12-24 | 2002-05-21 | Hyundai Electronics Industries Co., Ltd. | Method for manufacturing a gate structure incorporating aluminum oxide as a gate dielectric |
| JP4083396B2 (ja) * | 2000-07-10 | 2008-04-30 | 独立行政法人科学技術振興機構 | 紫外透明導電膜とその製造方法 |
| JP4403654B2 (ja) * | 2000-11-16 | 2010-01-27 | 富士電機システムズ株式会社 | 薄膜太陽電池 |
| US6696700B2 (en) * | 2001-03-09 | 2004-02-24 | National University Of Singapore | P-type transparent copper-aluminum-oxide semiconductor |
| US6761986B2 (en) * | 2001-04-06 | 2004-07-13 | Rockwell Scientific Licensing, Llc | Thin film infrared transparent conductor |
| KR100505536B1 (ko) * | 2002-03-27 | 2005-08-04 | 스미토모 긴조쿠 고잔 가부시키가이샤 | 투명한 도전성 박막, 그것의 제조방법, 그것의 제조를위한 소결 타겟, 디스플레이 패널용의 투명한 전기전도성기재, 및 유기 전기루미네선스 디바이스 |
| KR20060085465A (ko) * | 2005-01-24 | 2006-07-27 | 삼성전자주식회사 | 연속상 반도체 전극, 그의 제조방법 및 이를 채용한태양전지 |
-
2008
- 2008-06-10 DE DE602008005000T patent/DE602008005000D1/de active Active
- 2008-06-10 ES ES08157959T patent/ES2361212T3/es active Active
- 2008-06-10 EP EP08157959A patent/EP2133921B8/de not_active Not-in-force
- 2008-06-10 AT AT08157959T patent/ATE498911T1/de not_active IP Right Cessation
-
2009
- 2009-06-10 US US12/997,011 patent/US8623153B2/en not_active Expired - Fee Related
- 2009-06-10 KR KR1020107028959A patent/KR101621571B1/ko not_active Expired - Fee Related
- 2009-06-10 CN CN200980128591.8A patent/CN102105989B/zh not_active Expired - Fee Related
- 2009-06-10 WO PCT/EP2009/057148 patent/WO2009150169A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009150169A1 (en) | 2009-12-17 |
| EP2133921B8 (de) | 2011-10-05 |
| ES2361212T3 (es) | 2011-06-15 |
| EP2133921B1 (de) | 2011-02-16 |
| CN102105989A (zh) | 2011-06-22 |
| KR101621571B1 (ko) | 2016-05-16 |
| CN102105989B (zh) | 2014-03-12 |
| DE602008005000D1 (de) | 2011-03-31 |
| ES2361212T8 (es) | 2011-08-12 |
| KR20110046396A (ko) | 2011-05-04 |
| EP2133921A1 (de) | 2009-12-16 |
| US8623153B2 (en) | 2014-01-07 |
| US20110114226A1 (en) | 2011-05-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |