ES2361212T8 - Procedimiento para preparar un electrodo transparente estable. - Google Patents

Procedimiento para preparar un electrodo transparente estable. Download PDF

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Publication number
ES2361212T8
ES2361212T8 ES08157959T ES08157959T ES2361212T8 ES 2361212 T8 ES2361212 T8 ES 2361212T8 ES 08157959 T ES08157959 T ES 08157959T ES 08157959 T ES08157959 T ES 08157959T ES 2361212 T8 ES2361212 T8 ES 2361212T8
Authority
ES
Spain
Prior art keywords
metal film
thin metal
prepare
procedure
ultra thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES08157959T
Other languages
English (en)
Other versions
ES2361212T3 (es
Inventor
Valerio Pruneri
Luis Martínez Montblanch
Stefano Giurgola
Paolo Vergani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institucio Catalana de Recerca i Estudis Avancats ICREA
Institut de Ciencies Fotoniques ICFO
Original Assignee
Institucio Catalana de Recerca i Estudis Avancats ICREA
Institut de Ciencies Fotoniques ICFO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institucio Catalana de Recerca i Estudis Avancats ICREA, Institut de Ciencies Fotoniques ICFO filed Critical Institucio Catalana de Recerca i Estudis Avancats ICREA
Application granted granted Critical
Publication of ES2361212T3 publication Critical patent/ES2361212T3/es
Publication of ES2361212T8 publication Critical patent/ES2361212T8/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Non-Insulated Conductors (AREA)
  • Chemically Coating (AREA)
  • Liquid Crystal (AREA)
ES08157959T 2008-06-10 2008-06-10 Procedimiento para preparar un electrodo transparente estable. Active ES2361212T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP08157959A EP2133921B8 (en) 2008-06-10 2008-06-10 method to prepare a stable transparent electrode

Publications (2)

Publication Number Publication Date
ES2361212T3 ES2361212T3 (es) 2011-06-15
ES2361212T8 true ES2361212T8 (es) 2011-08-12

Family

ID=39929582

Family Applications (1)

Application Number Title Priority Date Filing Date
ES08157959T Active ES2361212T3 (es) 2008-06-10 2008-06-10 Procedimiento para preparar un electrodo transparente estable.

Country Status (8)

Country Link
US (1) US8623153B2 (es)
EP (1) EP2133921B8 (es)
KR (1) KR101621571B1 (es)
CN (1) CN102105989B (es)
AT (1) ATE498911T1 (es)
DE (1) DE602008005000D1 (es)
ES (1) ES2361212T3 (es)
WO (1) WO2009150169A1 (es)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2581789B1 (en) 2011-10-14 2020-04-29 Fundació Institut de Ciències Fotòniques Optically transparent and electrically conductive coatings and method for their deposition on a substrate
US9023457B2 (en) 2011-11-30 2015-05-05 Corning Incorporated Textured surfaces and methods of making and using same
US9296183B2 (en) 2011-11-30 2016-03-29 Corning Incorporated Metal dewetting methods and articles produced thereby
US20160002096A1 (en) 2014-07-02 2016-01-07 Corning Incorporated Silicon and silica nanostructures and method of making silicon and silica nanostructures
US9506890B2 (en) 2014-12-16 2016-11-29 Eastman Chemical Company Physical vapor deposited biosensor components
CN105449106B (zh) * 2015-12-28 2018-10-23 中国科学院重庆绿色智能技术研究院 一种基于超薄金属的透明电极及其制备方法
JP6905543B2 (ja) 2016-06-15 2021-07-21 イーストマン ケミカル カンパニー 物理蒸着したバイオセンサー部品
EP3512957B1 (en) 2016-09-16 2022-03-09 Eastman Chemical Company Biosensor electrodes prepared by physical vapor deposition
JP7111698B2 (ja) 2016-09-16 2022-08-02 イーストマン ケミカル カンパニー 物理蒸着によって製造されるバイオセンサー電極
WO2018236572A1 (en) 2017-06-22 2018-12-27 Eastman Chemical Company PHYSICAL DEPOSITION ELECTRODE IN VAPOR PHASE FOR ELECTROCHEMICAL SENSORS
US12351899B2 (en) 2021-05-28 2025-07-08 Corning Incorporated Transparent article with a body and metal oxide disposed directly on the body, facilitating deposition of an electrically conductive and transparent ultra-thin metal film of a noble metal, and method of forming the same
KR102667756B1 (ko) 2021-10-18 2024-05-20 성균관대학교산학협력단 고분자 보호층을 포함하는 다층 투명 전극 및 이의 제조방법
CN116334546B (zh) * 2023-05-26 2023-10-20 江西兆驰半导体有限公司 一种电子束蒸镀超薄Ni金属的方法及倒装LED芯片
CN116770229A (zh) * 2023-07-19 2023-09-19 中国人民解放军国防科技大学 一种在范德华衬底上制备超平整金属薄膜的方法和一种超平整金属薄膜

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6602606B1 (en) * 1999-05-18 2003-08-05 Nippon Sheet Glass Co., Ltd. Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same
US6391724B1 (en) * 1999-12-24 2002-05-21 Hyundai Electronics Industries Co., Ltd. Method for manufacturing a gate structure incorporating aluminum oxide as a gate dielectric
JP4083396B2 (ja) * 2000-07-10 2008-04-30 独立行政法人科学技術振興機構 紫外透明導電膜とその製造方法
JP4403654B2 (ja) * 2000-11-16 2010-01-27 富士電機システムズ株式会社 薄膜太陽電池
US6696700B2 (en) * 2001-03-09 2004-02-24 National University Of Singapore P-type transparent copper-aluminum-oxide semiconductor
US6761986B2 (en) * 2001-04-06 2004-07-13 Rockwell Scientific Licensing, Llc Thin film infrared transparent conductor
TWI254080B (en) * 2002-03-27 2006-05-01 Sumitomo Metal Mining Co Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device
KR20060085465A (ko) * 2005-01-24 2006-07-27 삼성전자주식회사 연속상 반도체 전극, 그의 제조방법 및 이를 채용한태양전지

Also Published As

Publication number Publication date
ES2361212T3 (es) 2011-06-15
DE602008005000D1 (de) 2011-03-31
EP2133921B8 (en) 2011-10-05
EP2133921B1 (en) 2011-02-16
CN102105989A (zh) 2011-06-22
US8623153B2 (en) 2014-01-07
WO2009150169A1 (en) 2009-12-17
CN102105989B (zh) 2014-03-12
EP2133921A1 (en) 2009-12-16
US20110114226A1 (en) 2011-05-19
KR20110046396A (ko) 2011-05-04
ATE498911T1 (de) 2011-03-15
KR101621571B1 (ko) 2016-05-16

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