ATE499328T1 - HOCHREINER QUARZGLASTIEGEL ZUM ZIEHEN EINES EINKRISTALL-SILICIUMBLOCKS MIT GROßEM DURCHMESSER SOWIE HERSTELLUNGSVERFAHREN - Google Patents

HOCHREINER QUARZGLASTIEGEL ZUM ZIEHEN EINES EINKRISTALL-SILICIUMBLOCKS MIT GROßEM DURCHMESSER SOWIE HERSTELLUNGSVERFAHREN

Info

Publication number
ATE499328T1
ATE499328T1 AT08020769T AT08020769T ATE499328T1 AT E499328 T1 ATE499328 T1 AT E499328T1 AT 08020769 T AT08020769 T AT 08020769T AT 08020769 T AT08020769 T AT 08020769T AT E499328 T1 ATE499328 T1 AT E499328T1
Authority
AT
Austria
Prior art keywords
crystal silicon
crucible
purity
crucial
growing
Prior art date
Application number
AT08020769T
Other languages
English (en)
Inventor
Tadahiro Satou
Original Assignee
Japan Super Quartz Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Super Quartz Corp filed Critical Japan Super Quartz Corp
Application granted granted Critical
Publication of ATE499328T1 publication Critical patent/ATE499328T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06—Joining glass to glass by processes other than fusing
    • C03C27/10—Joining glass to glass by processes other than fusing with the aid of adhesive specially adapted for that purpose
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Glass Compositions (AREA)
AT08020769T 2007-12-14 2008-11-28 HOCHREINER QUARZGLASTIEGEL ZUM ZIEHEN EINES EINKRISTALL-SILICIUMBLOCKS MIT GROßEM DURCHMESSER SOWIE HERSTELLUNGSVERFAHREN ATE499328T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007323420A JP4918473B2 (ja) 2007-12-14 2007-12-14 高強度を有する大径シリコン単結晶インゴット引上げ用高純度石英ガラスルツボ

Publications (1)

Publication Number Publication Date
ATE499328T1 true ATE499328T1 (de) 2011-03-15

Family

ID=40445424

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08020769T ATE499328T1 (de) 2007-12-14 2008-11-28 HOCHREINER QUARZGLASTIEGEL ZUM ZIEHEN EINES EINKRISTALL-SILICIUMBLOCKS MIT GROßEM DURCHMESSER SOWIE HERSTELLUNGSVERFAHREN

Country Status (6)

Country Link
US (1) US8888915B2 (de)
EP (1) EP2070882B1 (de)
JP (1) JP4918473B2 (de)
KR (1) KR101104673B1 (de)
AT (1) ATE499328T1 (de)
DE (1) DE602008005099D1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101965418B (zh) * 2008-02-29 2012-12-05 日本超精石英株式会社 单晶硅拉晶用石英坩埚及其制造方法
JP5102744B2 (ja) * 2008-10-31 2012-12-19 ジャパンスーパークォーツ株式会社 石英ルツボ製造用モールド
JP4922355B2 (ja) * 2009-07-15 2012-04-25 信越石英株式会社 シリカ容器及びその製造方法
JP5397857B2 (ja) * 2009-10-20 2014-01-22 株式会社Ｓｕｍｃｏ 石英ガラスルツボの製造方法および製造装置
US20110129784A1 (en) * 2009-11-30 2011-06-02 James Crawford Bange Low thermal expansion doped fused silica crucibles
JP4951057B2 (ja) * 2009-12-10 2012-06-13 信越石英株式会社 シリカ容器及びその製造方法
JP5610570B2 (ja) * 2010-07-20 2014-10-22 株式会社Sumco シリカガラスルツボ、シリコンインゴットの製造方法
JP5467418B2 (ja) * 2010-12-01 2014-04-09 株式会社Ｓｕｍｃｏ 造粒シリカ粉の製造方法、シリカガラスルツボの製造方法
JP5781303B2 (ja) * 2010-12-31 2015-09-16 株式会社Sumco シリカガラスルツボ製造方法およびシリカガラスルツボ製造装置
US9216923B2 (en) * 2011-07-25 2015-12-22 Shin-Etsu Quartz Products Co., Ltd. Metal and graphite mold and method of making a crucible
DE112017004764B4 (de) * 2016-09-23 2026-03-05 Sumco Corporation Quarzglastiegel, Herstellungsverfahren dafür und Verfahren zur Herstellung eines Silicium-Einkristalls unter Verwendung eines Quarzglastiegels
US12590383B2 (en) 2022-08-29 2026-03-31 Globalwafers Co., Ltd. Synthetic crucibles with rim coating

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0788269B2 (ja) * 1987-03-10 1995-09-27 東芝セラミツクス株式会社 シリコン単結晶引上げ用ルツボ
JPH0729871B2 (ja) * 1987-12-03 1995-04-05 信越半導体 株式会社 単結晶引き上げ用石英るつぼ
JP2824883B2 (ja) * 1992-07-31 1998-11-18 信越石英株式会社 石英ガラスルツボの製造方法
JP3123696B2 (ja) * 1993-12-17 2001-01-15 東芝セラミックス株式会社 石英ガラス坩堝の製造方法
JP4285788B2 (ja) * 1996-03-14 2009-06-24 信越石英株式会社 単結晶引き上げ用大口径石英るつぼの製造方法
JPH11171687A (ja) 1997-12-12 1999-06-29 Sumitomo Sitix Corp 単結晶の酸素濃度制御方法
EP1026289B1 (de) * 1998-07-31 2011-07-06 Shin-Etsu Quartz Products Co., Ltd. Quartzglastiegel zum ziehen von siliciumeinkristallen und verfahren zu deren herstellung
WO2002014587A1 (fr) * 2000-08-15 2002-02-21 Shin-Etsu Handotai Co., Ltd. Creuset en quartz et procede de fabrication d'un monocristal
JP4444559B2 (ja) * 2002-10-09 2010-03-31 ジャパンスーパークォーツ株式会社 石英ガラスルツボの強化方法とシリコン単結晶の引き上げ方法
JP2005145732A (ja) 2003-11-12 2005-06-09 Kuramoto Seisakusho Co Ltd 結晶化石英ルツボ
JP2005255488A (ja) 2004-03-12 2005-09-22 Komatsu Electronic Metals Co Ltd 石英るつぼおよび石英るつぼを用いた半導体単結晶製造方法
JP2006124235A (ja) 2004-10-29 2006-05-18 Japan Siper Quarts Corp 石英ガラスルツボとその製造方法および用途
JP4753640B2 (ja) * 2005-06-28 2011-08-24 南条装備工業株式会社 表皮材の切断装置
JP4994647B2 (ja) 2005-11-30 2012-08-08 ジャパンスーパークォーツ株式会社 結晶化し易い石英ガラス部材とその用途
JP2007323420A (ja) 2006-06-01 2007-12-13 Canon Inc 会議履歴検索装置
US7716948B2 (en) * 2006-12-18 2010-05-18 Heraeus Shin-Etsu America, Inc. Crucible having a doped upper wall portion and method for making the same

Also Published As

Publication number Publication date
US20090173276A1 (en) 2009-07-09
EP2070882A1 (de) 2009-06-17
KR101104673B1 (ko) 2012-01-13
JP2009143770A (ja) 2009-07-02
JP4918473B2 (ja) 2012-04-18
US8888915B2 (en) 2014-11-18
KR20090064302A (ko) 2009-06-18
EP2070882B1 (de) 2011-02-23
DE602008005099D1 (de) 2011-04-07

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