ATE494403T1 - HOCHREINER GLASARTIGER QUARZTIEGEL ZUM ZIEHEN EINES EINKRISTALL-SILICIUMBLOCKS MIT GROßEM DURCHMESSER - Google Patents

HOCHREINER GLASARTIGER QUARZTIEGEL ZUM ZIEHEN EINES EINKRISTALL-SILICIUMBLOCKS MIT GROßEM DURCHMESSER

Info

Publication number
ATE494403T1
ATE494403T1 AT08020770T AT08020770T ATE494403T1 AT E494403 T1 ATE494403 T1 AT E494403T1 AT 08020770 T AT08020770 T AT 08020770T AT 08020770 T AT08020770 T AT 08020770T AT E494403 T1 ATE494403 T1 AT E494403T1
Authority
AT
Austria
Prior art keywords
purity
crystal silicon
vitreous silica
diameter single
crucial
Prior art date
Application number
AT08020770T
Other languages
English (en)
Inventor
Atushi Shimazu
Original Assignee
Japan Super Quartz Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Super Quartz Corp filed Critical Japan Super Quartz Corp
Application granted granted Critical
Publication of ATE494403T1 publication Critical patent/ATE494403T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)
AT08020770T 2007-12-14 2008-11-28 HOCHREINER GLASARTIGER QUARZTIEGEL ZUM ZIEHEN EINES EINKRISTALL-SILICIUMBLOCKS MIT GROßEM DURCHMESSER ATE494403T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007323419A JP4799536B2 (ja) 2007-12-14 2007-12-14 大径のシリコン単結晶インゴット中のピンホール欠陥の低減を可能とする大径シリコン単結晶インゴット引上げ用高純度石英ガラスルツボ

Publications (1)

Publication Number Publication Date
ATE494403T1 true ATE494403T1 (de) 2011-01-15

Family

ID=40473408

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08020770T ATE494403T1 (de) 2007-12-14 2008-11-28 HOCHREINER GLASARTIGER QUARZTIEGEL ZUM ZIEHEN EINES EINKRISTALL-SILICIUMBLOCKS MIT GROßEM DURCHMESSER

Country Status (6)

Country Link
US (1) US8172945B2 (de)
EP (1) EP2071059B1 (de)
JP (1) JP4799536B2 (de)
KR (1) KR101104674B1 (de)
AT (1) ATE494403T1 (de)
DE (1) DE602008004297D1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4879220B2 (ja) * 2008-05-28 2012-02-22 ジャパンスーパークォーツ株式会社 石英ガラスルツボとその製造方法
JP4987029B2 (ja) * 2009-04-02 2012-07-25 ジャパンスーパークォーツ株式会社 シリコン単結晶引き上げ用石英ガラスルツボ
WO2011013695A1 (ja) * 2009-07-31 2011-02-03 ジャパンスーパークォーツ株式会社 シリコン単結晶引き上げ用シリカガラスルツボ
EP2385156B1 (de) * 2009-12-11 2013-11-13 Japan Super Quartz Corporation Siliciumglastiegel
KR101248915B1 (ko) * 2009-12-11 2013-04-01 쟈판 스파 쿼츠 가부시키가이샤 실리카 유리 도가니
JP5618409B2 (ja) 2010-12-01 2014-11-05 株式会社Sumco シリカガラスルツボ
KR101293526B1 (ko) * 2011-01-28 2013-08-06 쟈판 스파 쿼츠 가부시키가이샤 실리콘 단결정 인상용 석영 유리 도가니 및 그의 제조 방법
US9328009B2 (en) * 2011-05-13 2016-05-03 Sumco Corporation Vitreous silica crucible for pulling silicon single crystal, and method for manufacturing the same
JP5250097B2 (ja) * 2011-12-12 2013-07-31 信越石英株式会社 単結晶シリコン引き上げ用シリカ容器及びその製造方法
WO2015001593A1 (ja) * 2013-06-30 2015-01-08 株式会社Sumco シリカガラスルツボ
CN103526280A (zh) * 2013-10-12 2014-01-22 南通路博石英材料有限公司 一种内表面具有凹槽拉晶用石英玻璃坩埚的制备方法
US9863061B2 (en) * 2013-12-28 2018-01-09 Sumco Corporation Vitreous silica crucible and method for manufacturing the same
JP6208080B2 (ja) * 2014-05-22 2017-10-04 クアーズテック株式会社 石英ガラスルツボ
AT16098U1 (de) * 2017-05-03 2019-01-15 Plansee Se Glasschmelzkomponente
JP7155968B2 (ja) * 2018-12-04 2022-10-19 Tdk株式会社 単結晶育成用ルツボ及び単結晶製造方法
CN110656370A (zh) * 2019-11-06 2020-01-07 西安奕斯伟硅片技术有限公司 一种坩埚

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3972704A (en) * 1971-04-19 1976-08-03 Sherwood Refractories, Inc. Apparatus for making vitreous silica receptacles
US4612973A (en) * 1984-08-31 1986-09-23 Northeastern University Cold-hearth melt-spinning apparatus for providing continuous casting of refractory and reactive alloys
JPH0788269B2 (ja) * 1987-03-10 1995-09-27 東芝セラミツクス株式会社 シリコン単結晶引上げ用ルツボ
JPH0729871B2 (ja) * 1987-12-03 1995-04-05 信越半導体 株式会社 単結晶引き上げ用石英るつぼ
JPH0524969A (ja) * 1991-02-08 1993-02-02 Sumitomo Metal Ind Ltd 結晶成長装置
US5306473A (en) * 1992-01-31 1994-04-26 Toshiba Ceramics Co., Ltd. Quartz glass crucible for pulling a single crystal
JPH0742193B2 (ja) 1992-04-27 1995-05-10 信越半導体株式会社 単結晶引き上げ用石英るつぼ
JP2824883B2 (ja) * 1992-07-31 1998-11-18 信越石英株式会社 石英ガラスルツボの製造方法
JP3305823B2 (ja) 1993-08-04 2002-07-24 株式会社竹中工務店 揚土装置
JP3123696B2 (ja) * 1993-12-17 2001-01-15 東芝セラミックス株式会社 石英ガラス坩堝の製造方法
JP2000169283A (ja) 1998-12-07 2000-06-20 Nippon Steel Corp シリコン単結晶引き上げ用石英ルツボ及びその製造方法
DE19917288C2 (de) * 1999-04-16 2001-06-28 Heraeus Quarzglas Quarzglas-Tiegel
US6200385B1 (en) * 2000-03-20 2001-03-13 Carl Francis Swinehart Crucible for growing macrocrystals
WO2002014587A1 (fr) * 2000-08-15 2002-02-21 Shin-Etsu Handotai Co., Ltd. Creuset en quartz et procede de fabrication d'un monocristal
JP4330363B2 (ja) * 2003-03-28 2009-09-16 ジャパンスーパークォーツ株式会社 石英ガラスルツボ
JP4994576B2 (ja) * 2004-03-23 2012-08-08 コバレントマテリアル株式会社 シリカガラスルツボ
JP4466175B2 (ja) * 2004-04-14 2010-05-26 株式会社Ｓｕｍｃｏ 石英ルツボ
JP4781020B2 (ja) * 2005-06-29 2011-09-28 信越半導体株式会社 シリコン単結晶引き上げ用石英ガラスルツボおよびシリコン単結晶引き上げ用石英ガラスルツボの製造方法
JP2007323419A (ja) 2006-06-01 2007-12-13 Toshiba Tec Corp セルフチェックアウト装置

Also Published As

Publication number Publication date
US20090151624A1 (en) 2009-06-18
EP2071059A1 (de) 2009-06-17
DE602008004297D1 (de) 2011-02-17
US8172945B2 (en) 2012-05-08
JP2009143769A (ja) 2009-07-02
JP4799536B2 (ja) 2011-10-26
KR101104674B1 (ko) 2012-01-13
KR20090064303A (ko) 2009-06-18
EP2071059B1 (de) 2011-01-05

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