ATE499602T1 - Signalprozessierungsschaltkreis mit ionensensitivem feldeffekttransistor sowie verfahren zur überwachung einer eigenschaft einer flüssigkeit - Google Patents

Signalprozessierungsschaltkreis mit ionensensitivem feldeffekttransistor sowie verfahren zur überwachung einer eigenschaft einer flüssigkeit

Info

Publication number
ATE499602T1
ATE499602T1 AT05752509T AT05752509T ATE499602T1 AT E499602 T1 ATE499602 T1 AT E499602T1 AT 05752509 T AT05752509 T AT 05752509T AT 05752509 T AT05752509 T AT 05752509T AT E499602 T1 ATE499602 T1 AT E499602T1
Authority
AT
Austria
Prior art keywords
signal processing
field effect
effect transistor
processing circuit
ion
Prior art date
Application number
AT05752509T
Other languages
English (en)
Inventor
Christofer Toumazou
Bhusana Premanode
Leila Shepherd
Original Assignee
Dna Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dna Electronics Ltd filed Critical Dna Electronics Ltd
Application granted granted Critical
Publication of ATE499602T1 publication Critical patent/ATE499602T1/de

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148Integrated circuits therefor, e.g. fabricated by CMOS processing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403Cells and electrode assemblies
    • G01N27/414Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Immunology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Measuring Or Testing Involving Enzymes Or Micro-Organisms (AREA)
  • Thin Film Transistor (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
AT05752509T 2004-07-13 2005-06-22 Signalprozessierungsschaltkreis mit ionensensitivem feldeffekttransistor sowie verfahren zur überwachung einer eigenschaft einer flüssigkeit ATE499602T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0415633A GB2416210B (en) 2004-07-13 2004-07-13 Ion sensitive field effect transistors
PCT/GB2005/050095 WO2006005967A1 (en) 2004-07-13 2005-06-22 Signal processing circuit comprising ion sensitive field effect transistor and method of monitoring a property of a fluid

Publications (1)

Publication Number Publication Date
ATE499602T1 true ATE499602T1 (de) 2011-03-15

Family

ID=32893482

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05752509T ATE499602T1 (de) 2004-07-13 2005-06-22 Signalprozessierungsschaltkreis mit ionensensitivem feldeffekttransistor sowie verfahren zur überwachung einer eigenschaft einer flüssigkeit

Country Status (9)

Country Link
US (2) US7649358B2 (de)
EP (2) EP1774306B1 (de)
JP (2) JP4801064B2 (de)
CN (2) CN101292156B (de)
AT (1) ATE499602T1 (de)
DE (1) DE602005026528D1 (de)
ES (2) ES2361324T3 (de)
GB (1) GB2416210B (de)
WO (1) WO2006005967A1 (de)

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Also Published As

Publication number Publication date
JP2011099877A (ja) 2011-05-19
EP2295957B1 (de) 2018-03-28
CN101292156A (zh) 2008-10-22
GB2416210B (en) 2008-02-20
ES2674618T3 (es) 2018-07-02
CN101949883B (zh) 2013-05-22
EP1774306A1 (de) 2007-04-18
GB0415633D0 (en) 2004-08-18
US20080265985A1 (en) 2008-10-30
GB2416210A8 (en) 2007-06-11
ES2361324T3 (es) 2011-06-16
US7649358B2 (en) 2010-01-19
DE602005026528D1 (de) 2011-04-07
JP4801064B2 (ja) 2011-10-26
WO2006005967A1 (en) 2006-01-19
EP2295957A1 (de) 2011-03-16
CN101949883A (zh) 2011-01-19
EP1774306B1 (de) 2011-02-23
US20100159461A1 (en) 2010-06-24
JP2008506943A (ja) 2008-03-06
JP5509118B2 (ja) 2014-06-04
CN101292156B (zh) 2011-01-12
GB2416210A (en) 2006-01-18

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