ATE500591T1 - Fortgesetzte verifikation bei schreiboperationen in nichtflüchtigen speicher - Google Patents

Fortgesetzte verifikation bei schreiboperationen in nichtflüchtigen speicher

Info

Publication number
ATE500591T1
ATE500591T1 AT06848129T AT06848129T ATE500591T1 AT E500591 T1 ATE500591 T1 AT E500591T1 AT 06848129 T AT06848129 T AT 06848129T AT 06848129 T AT06848129 T AT 06848129T AT E500591 T1 ATE500591 T1 AT E500591T1
Authority
AT
Austria
Prior art keywords
programming
memory cells
threshold voltage
verification
memory cell
Prior art date
Application number
AT06848129T
Other languages
English (en)
Inventor
Jian Chen
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/322,001 external-priority patent/US7352629B2/en
Priority claimed from US11/322,011 external-priority patent/US7307887B2/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE500591T1 publication Critical patent/ATE500591T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3486—Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
AT06848129T 2005-12-29 2006-12-27 Fortgesetzte verifikation bei schreiboperationen in nichtflüchtigen speicher ATE500591T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/322,001 US7352629B2 (en) 2005-12-29 2005-12-29 Systems for continued verification in non-volatile memory write operations
US11/322,011 US7307887B2 (en) 2005-12-29 2005-12-29 Continued verification in non-volatile memory write operations
PCT/US2006/049220 WO2007079062A1 (en) 2005-12-29 2006-12-27 Continued verification in non-volatile memory write operations

Publications (1)

Publication Number Publication Date
ATE500591T1 true ATE500591T1 (de) 2011-03-15

Family

ID=38002052

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06848129T ATE500591T1 (de) 2005-12-29 2006-12-27 Fortgesetzte verifikation bei schreiboperationen in nichtflüchtigen speicher

Country Status (7)

Country Link
EP (1) EP1971984B1 (de)
JP (1) JP2009522703A (de)
KR (1) KR101000546B1 (de)
AT (1) ATE500591T1 (de)
DE (1) DE602006020494D1 (de)
TW (1) TWI315875B (de)
WO (1) WO2007079062A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITRM20080114A1 (it) * 2008-02-29 2009-09-01 Micron Technology Inc Compensazione della perdita di carica durante la programmazione di un dispositivo di memoria.
JP2010211883A (ja) * 2009-03-11 2010-09-24 Toshiba Corp 不揮発性半導体記憶装置
US8248850B2 (en) * 2010-01-28 2012-08-21 Sandisk Technologies Inc. Data recovery for non-volatile memory based on count of data state-specific fails
JP2011204356A (ja) * 2011-07-19 2011-10-13 Toshiba Corp 不揮発性半導体記憶装置
JP5868381B2 (ja) * 2013-12-03 2016-02-24 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
KR101574781B1 (ko) 2014-04-09 2015-12-04 윈본드 일렉트로닉스 코포레이션 반도체 기억장치
US9165659B1 (en) 2014-05-08 2015-10-20 Sandisk Technologies Inc. Efficient reprogramming method for tightening a threshold voltage distribution in a memory device
JP2017054567A (ja) * 2015-09-10 2017-03-16 株式会社東芝 半導体記憶装置
CN110140174B (zh) * 2019-03-26 2021-02-19 长江存储科技有限责任公司 用于通过施加多个位线偏置电压在非易失性存储器器件中编程的方法
TWI866168B (zh) 2023-04-13 2024-12-11 華邦電子股份有限公司 記憶體裝置及其增強式程式化方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3796851B2 (ja) * 1996-10-21 2006-07-12 ソニー株式会社 不揮発性半導体記憶装置
JP3898349B2 (ja) * 1997-07-29 2007-03-28 株式会社東芝 半導体記憶装置
KR100255957B1 (ko) * 1997-07-29 2000-05-01 윤종용 전기적으로 소거 및 프로그램 가능한 메모리 셀들을 구비한반도체 메모리 장치
JP2000048582A (ja) * 1998-07-28 2000-02-18 Toshiba Corp 半導体記憶装置
FR2816751A1 (fr) * 2000-11-15 2002-05-17 St Microelectronics Sa Memoire flash effacable par page
US7042770B2 (en) * 2001-07-23 2006-05-09 Samsung Electronics Co., Ltd. Memory devices with page buffer having dual registers and method of using the same
US6621741B2 (en) * 2002-01-30 2003-09-16 Fujitsu Limited System for programming verification
US6781884B2 (en) * 2002-03-11 2004-08-24 Fujitsu Limited System for setting memory voltage threshold
US6888758B1 (en) * 2004-01-21 2005-05-03 Sandisk Corporation Programming non-volatile memory
US7020017B2 (en) * 2004-04-06 2006-03-28 Sandisk Corporation Variable programming of non-volatile memory

Also Published As

Publication number Publication date
EP1971984B1 (de) 2011-03-02
KR20080089459A (ko) 2008-10-06
WO2007079062A1 (en) 2007-07-12
TWI315875B (en) 2009-10-11
JP2009522703A (ja) 2009-06-11
EP1971984A1 (de) 2008-09-24
DE602006020494D1 (de) 2011-04-14
TW200746153A (en) 2007-12-16
KR101000546B1 (ko) 2010-12-14

Similar Documents

Publication Publication Date Title
JP2007533055A5 (de)
JP2010535395A5 (de)
TWI501232B (zh) 用於類比記憶體單元之增強之程式化及抹除方案
ATE492882T1 (de) Schnelles programmiersystem mit verringerter überprogrammierung
JP2008305536A5 (de)
WO2008124760A3 (en) Non-volatile memory and method for predictive programming
TW200713284A (en) Program method with optimized voltage level for flash memory
JP6214083B2 (ja) ソフトプログラミングを使用する不揮発性メモリ（ｎｖｍ）
TW200723282A (en) System and method for programming cells in non-volatile integrated memory devices
WO2009038961A3 (en) Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells
JP2010503945A5 (de)
WO2010093441A8 (en) Automatic refresh for improving data retention and endurance characteristics of an embedded non-volatile memory in a standard cmos logic process
WO2009146235A4 (en) Compensating non-volatile storage using different pass voltages during program- verify and read
JP2010503946A5 (de)
DE602006020494D1 (de) Fortgesetzte verifikation bei schreiboperationen in nichtflüchtigen speicher
ATE481714T1 (de) Segmentierte bit-abtastung zur programmierungsprüfung
WO2010093440A3 (en) Data restoration method for a non-volatile memory
KR20120092911A (ko) 반도체 메모리 장치 및 데이터 소거 방법
JP2016510476A (ja) 不揮発性メモリのプログラムアルゴリズムのデバイス及び方法
DE602006015930D1 (de) Löschen nichtflüchtiger speicher unter verwendung individueller überprüfung und zusätzlichen löschens von untergruppen von speicherzellen
JP2014142988A5 (de)
TW200641899A (en) Program method of flash memory device
JP2012022767A5 (de)
TW200741725A (en) Non-volatile memory with controlled program/erase
TW200733114A (en) Method for programming of multi-state non-volatile memory using smart verify

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties