ATE500609T1 - Verfahren zur herstellung eines bipolartransistors - Google Patents

Verfahren zur herstellung eines bipolartransistors

Info

Publication number
ATE500609T1
ATE500609T1 AT06728019T AT06728019T ATE500609T1 AT E500609 T1 ATE500609 T1 AT E500609T1 AT 06728019 T AT06728019 T AT 06728019T AT 06728019 T AT06728019 T AT 06728019T AT E500609 T1 ATE500609 T1 AT E500609T1
Authority
AT
Austria
Prior art keywords
trench
bipolar transistor
region
producing
aligned
Prior art date
Application number
AT06728019T
Other languages
English (en)
Inventor
Francois Neuilly
Johannes Donkers
Erwin Hijzen
Philippe Meunier-Beillard
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE500609T1 publication Critical patent/ATE500609T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
AT06728019T 2005-04-29 2006-04-24 Verfahren zur herstellung eines bipolartransistors ATE500609T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05103583 2005-04-29
PCT/IB2006/051262 WO2006117712A1 (en) 2005-04-29 2006-04-24 Method of fabricating a bipolar transistor

Publications (1)

Publication Number Publication Date
ATE500609T1 true ATE500609T1 (de) 2011-03-15

Family

ID=36741404

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06728019T ATE500609T1 (de) 2005-04-29 2006-04-24 Verfahren zur herstellung eines bipolartransistors

Country Status (8)

Country Link
US (1) US7605027B2 (de)
EP (1) EP1878046B1 (de)
JP (1) JP2008539579A (de)
CN (1) CN100565822C (de)
AT (1) ATE500609T1 (de)
DE (1) DE602006020430D1 (de)
TW (1) TWI376750B (de)
WO (1) WO2006117712A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009147559A1 (en) * 2008-06-02 2009-12-10 Nxp B.V. Local buried layer forming method and semiconductor device having such a layer
US8020128B2 (en) * 2009-06-29 2011-09-13 International Business Machines Corporation Scaling of bipolar transistors
CN101719508B (zh) * 2009-11-10 2013-09-04 上海宏力半导体制造有限公司 一种薄soi纵向双极型晶体管及其制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4519128A (en) * 1983-10-05 1985-05-28 International Business Machines Corporation Method of making a trench isolated device
GB8507624D0 (en) * 1985-03-23 1985-05-01 Standard Telephones Cables Ltd Semiconductor devices
US4887144A (en) * 1985-07-26 1989-12-12 Texas Instruments Incorporated Topside substrate contact in a trenched semiconductor structure and method of fabrication
US5583368A (en) * 1994-08-11 1996-12-10 International Business Machines Corporation Stacked devices
KR0171000B1 (ko) * 1995-12-15 1999-02-01 양승택 자동 정의된 베이스 전극을 갖는 바이폴라 트랜지스터 구조 및 그 제조방법
EP0970518B1 (de) * 1997-03-18 2012-04-25 Infineon Technologies AG Durch einen graben isolierte bipolare bauelemente
US6521974B1 (en) * 1999-10-14 2003-02-18 Hitachi, Ltd. Bipolar transistor and manufacturing method thereof
US6506657B1 (en) * 2000-04-19 2003-01-14 National Semiconductor Corporation Process for forming damascene-type isolation structure for BJT device formed in trench
US20030082882A1 (en) * 2001-10-31 2003-05-01 Babcock Jeffrey A. Control of dopant diffusion from buried layers in bipolar integrated circuits
US6759731B2 (en) * 2002-06-05 2004-07-06 United Microelectronics Corp. Bipolar junction transistor and fabricating method
FR2845522A1 (fr) * 2002-10-03 2004-04-09 St Microelectronics Sa Circuit integre a couche enterree fortement conductrice

Also Published As

Publication number Publication date
WO2006117712A1 (en) 2006-11-09
EP1878046B1 (de) 2011-03-02
JP2008539579A (ja) 2008-11-13
EP1878046A1 (de) 2008-01-16
TW200644125A (en) 2006-12-16
CN101180713A (zh) 2008-05-14
US20080233688A1 (en) 2008-09-25
DE602006020430D1 (de) 2011-04-14
US7605027B2 (en) 2009-10-20
CN100565822C (zh) 2009-12-02
TWI376750B (en) 2012-11-11

Similar Documents

Publication Publication Date Title
TW200625407A (en) Method for foring a finely patterned resist
ATE439682T1 (de) C-implantierung für verbesserte produktivität von sige-bipolartransistoren
ATE441938T1 (de) Herstellungsverfahren für finfets mit verringertem widerstand
ATE532211T1 (de) Verfahren zur herstellung eines bipolaren transistors
WO2011008359A3 (en) Scaling of bipolar transistors
ATE364901T1 (de) Laterale pin diode aus polysilizium und verfahren zur herstellung
ATE512460T1 (de) Verfahren zur herstellung eines transistors
TW200507080A (en) Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same
TW200507262A (en) BiCMOS integration scheme with raised extrinsic base
TW200620478A (en) Self-aligned epitaxially grown bipolar transistor
TW200620539A (en) BiCMOS compatible JFET device and method of manufacturing same
ATE436089T1 (de) Verfahren zur herstellung von halbleiteranordnungen mit graben-gate
WO2005074549A3 (en) Bipolar junction transistor geometry
TW200642035A (en) Semiconductor device and method for fabricating the same
TW200635030A (en) Bipolar transistor with self-aligned retrograde extrinsic base implant profile and self-aligned silicide
DE602006020430D1 (de) Verfahren zur herstellung eines bipolartransistors
TW200614414A (en) Trench power mosfet and method for fabricating the same
WO2003001584A8 (en) A non-self-aligned sige heterojunction bipolar transistor
ATE508475T1 (de) Verfahren zur herstellung eines bipolartransistors
JP2008514018A5 (de)
WO2002047160A3 (de) Verfahren zur herstellung von schnellen vertikalen npn-bipolartransistoren und komplementären mos-transistoren auf einem chip
DE60120897D1 (de) Herstellung eines CMOS Kondensators
FR2805081B1 (fr) Procede de fabrication de transistor bipolaire a double heterojonction sur materiau iii-v
TW200608467A (en) Method for fabricating semiconductor device
ATE484074T1 (de) Halbleitervorrichtung und verfahren zu deren herstellung

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties