ATE500621T1 - Implementierung von lawinenfotodioden in (bi) cmos-verfahren - Google Patents

Implementierung von lawinenfotodioden in (bi) cmos-verfahren

Info

Publication number
ATE500621T1
ATE500621T1 AT07760388T AT07760388T ATE500621T1 AT E500621 T1 ATE500621 T1 AT E500621T1 AT 07760388 T AT07760388 T AT 07760388T AT 07760388 T AT07760388 T AT 07760388T AT E500621 T1 ATE500621 T1 AT E500621T1
Authority
AT
Austria
Prior art keywords
doped region
semiconductor layer
implementation
avalanche photodiodes
cmos processes
Prior art date
Application number
AT07760388T
Other languages
English (en)
Inventor
Anco Heringa
Thomas Frach
Prabhat Agarwal
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE500621T1 publication Critical patent/ATE500621T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Measurement Of Radiation (AREA)
  • Nuclear Medicine (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Drying Of Semiconductors (AREA)
  • Amplifiers (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
AT07760388T 2006-04-25 2007-04-10 Implementierung von lawinenfotodioden in (bi) cmos-verfahren ATE500621T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US74554906P 2006-04-25 2006-04-25
PCT/US2007/066316 WO2007127607A1 (en) 2006-04-25 2007-04-10 Implementation of avalanche photo diodes in (bi) cmos processes

Publications (1)

Publication Number Publication Date
ATE500621T1 true ATE500621T1 (de) 2011-03-15

Family

ID=38324002

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07760388T ATE500621T1 (de) 2006-04-25 2007-04-10 Implementierung von lawinenfotodioden in (bi) cmos-verfahren

Country Status (7)

Country Link
US (1) US7759650B2 (de)
EP (1) EP2013916B1 (de)
JP (2) JP5437791B2 (de)
CN (2) CN101432893A (de)
AT (1) ATE500621T1 (de)
DE (1) DE602007012854D1 (de)
WO (1) WO2007127607A1 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3002794B1 (de) 2006-07-03 2020-08-19 Hamamatsu Photonics K.K. Fotodiodenarray
US8188563B2 (en) * 2006-07-21 2012-05-29 The Regents Of The University Of California Shallow-trench-isolation (STI)-bounded single-photon CMOS photodetector
US8440495B2 (en) * 2007-03-06 2013-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method for reducing crosstalk in image sensors using implant technology
DE102008011280B4 (de) * 2008-02-27 2010-01-28 Ketek Gmbh Strahlungsempfangendes Halbleiterbauelement, Verfahren zum Betreiben und Verwendung desselben sowie Strahlungsdetektor und Halbleiteranordung mit dem Halbleiterbauelement
US7659519B1 (en) * 2008-06-04 2010-02-09 Kotura, Inc. System having reduced distance between scintillator and light sensor array
EP2455984A3 (de) * 2008-07-10 2013-07-17 STMicroelectronics (Research & Development) Limited Verbesserungen von Einzelphoton-Avalanche-Dioden
US8637875B2 (en) 2008-07-11 2014-01-28 The Regents Of The University Of California Single photon IR detectors and their integration with silicon detectors
US7898001B2 (en) * 2008-12-03 2011-03-01 Stmicroelectronics (Research & Development) Limited Single photon detector and associated methods for making the same
KR101776955B1 (ko) 2009-02-10 2017-09-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자 기기
US8476571B2 (en) * 2009-12-22 2013-07-02 Siemens Aktiengesellschaft SiPM photosensor with early signal digitization
WO2012016198A2 (en) * 2010-07-30 2012-02-02 Pulsetor, Llc Electron detector including an intimately-coupled scintillator-photomultiplier combination, and electron microscope and x-ray detector employing same
EP2656400B1 (de) * 2010-12-21 2017-05-31 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Fotoelektrischer vervielfacher basierend auf silizium mit unterdrückung des optischen übersprechens durch besondere eigenschaften des substrats
JP5353965B2 (ja) * 2011-07-11 2013-11-27 ソニー株式会社 固体撮像装置の製造方法
JP5246304B2 (ja) * 2011-07-11 2013-07-24 ソニー株式会社 固体撮像装置の製造方法
EP2732311A1 (de) 2011-07-12 2014-05-21 Isis Innovation Limited Ionendetektor
FR2978251B1 (fr) * 2011-07-19 2014-04-18 Saint Gobain Cristaux Et Detecteurs Detecteur a scintillateur conique
JP6059722B2 (ja) 2011-08-03 2017-01-11 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． デジタルシリコン光電子増倍管アレイに関する位置敏感な読み出しモード
JP6215202B2 (ja) * 2011-08-05 2017-10-18 パルセータ, エルエルシーPulsetor, Llc 密接に結合したシンチレータ−光電子増倍管の１又は複数の組合体を含む電子検出器及びそれを使用した電子顕微鏡
KR101777225B1 (ko) * 2011-12-16 2017-09-12 한국전자통신연구원 아발란치 포토다이오드 및 그의 제조방법
US8736008B2 (en) 2012-01-04 2014-05-27 General Electric Company Photodiode array and methods of fabrication
JP5535261B2 (ja) * 2012-03-19 2014-07-02 株式会社東芝 固体撮像装置
JP5984617B2 (ja) 2012-10-18 2016-09-06 浜松ホトニクス株式会社 フォトダイオードアレイ
JP5519827B2 (ja) * 2013-05-13 2014-06-11 ソニー株式会社 固体撮像装置及び電子機器
CN103887362B (zh) * 2014-03-28 2016-08-17 重庆邮电大学 一种带有深n阱的np型cmos雪崩光电二极管
JP6193171B2 (ja) 2014-04-11 2017-09-06 株式会社東芝 光検出器
KR101728054B1 (ko) * 2014-10-02 2017-05-02 주식회사 아비즈알 방사선 검출기 어셈블리
US9606245B1 (en) 2015-03-24 2017-03-28 The Research Foundation For The State University Of New York Autonomous gamma, X-ray, and particle detector
JP6163511B2 (ja) * 2015-04-16 2017-07-12 ソニー株式会社 固体撮像装置、及び電子機器
CN105789336B (zh) * 2016-04-01 2017-06-20 西安电子科技大学 基于碳化硅PIN二极管结构的α辐照闪烁体探测器
CN105845746B (zh) * 2016-04-01 2017-06-13 西安电子科技大学 基于碳化硅PIN二极管结构的γ辐照闪烁体探测器
CN105931952B (zh) * 2016-05-17 2019-06-11 华润微电子（重庆）有限公司 一种雪崩二极管结构的制造方法
CN106129107B (zh) * 2016-07-01 2019-07-09 电子科技大学 半导体结构、半导体组件及功率半导体器件
US10497818B2 (en) * 2016-07-29 2019-12-03 Canon Kabushiki Kaisha Photodetection device and photodetection system
JP2018019040A (ja) * 2016-07-29 2018-02-01 キヤノン株式会社 光検出装置および光検出システム
JP7013120B2 (ja) * 2016-07-29 2022-01-31 キヤノン株式会社 光検出装置および光検出システム
CN106298817A (zh) * 2016-10-19 2017-01-04 天津大学 基于标准cmos工艺可变增益光电探测器及制备方法
JP6921508B2 (ja) * 2016-11-29 2021-08-18 キヤノン株式会社 光検出装置および光検出システム
KR101864963B1 (ko) * 2016-12-19 2018-06-05 경희대학교 산학협력단 방사선 디텍터 및 그 제조 방법
WO2018117485A1 (ko) * 2016-12-19 2018-06-28 경희대학교산학협력단 실리콘 카바이드 기판 상에 형성된 트랜지스터를 포함하는 방사선 디텍터
CN109713062B (zh) * 2018-12-24 2020-12-18 华中科技大学 一种硅雪崩光电探测芯片及其制备方法
EP3948359B1 (de) * 2019-03-29 2023-12-27 Shenzhen Xpectvision Technology Co., Ltd. Vorrichtungen zur strahlungsdetektion und deren herstellungsverfahren
US11346924B2 (en) 2019-12-09 2022-05-31 Waymo Llc SiPM with cells of different sizes
JP2022039524A (ja) 2020-08-28 2022-03-10 株式会社東芝 半導体装置
JP2022089651A (ja) * 2020-12-04 2022-06-16 ソニーセミコンダクタソリューションズ株式会社 光検出装置および測距装置
JP7854276B2 (ja) * 2021-09-22 2026-05-01 浜松ホトニクス株式会社 放射線検出器及び放射線検出器アレイ

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50151090A (de) * 1974-05-23 1975-12-04
JPS60233851A (ja) * 1984-04-17 1985-11-20 Olympus Optical Co Ltd 固体イメ−ジセンサ
US4805346A (en) 1987-09-04 1989-02-21 General Motors Corporation Vehicle door glass attachment to cable drive window regulator mechanism
US4982095A (en) * 1987-09-04 1991-01-01 Hitachi, Ltd. Multi-element type radiation detector
JPH01134978A (ja) * 1987-11-20 1989-05-26 Hitachi Ltd 半導体受光装置
JPH0231153U (de) * 1988-08-20 1990-02-27
US5744851A (en) * 1992-01-27 1998-04-28 Harris Corporation Biasing of island-surrounding material to suppress reduction of breakdown voltage due to field plate acting on buried layer/island junction between high and low impurity concentration regions
US6040617A (en) * 1992-12-22 2000-03-21 Stmicroelectronics, Inc. Structure to provide junction breakdown stability for deep trench devices
US5587611A (en) * 1995-05-08 1996-12-24 Analogic Corporation Coplanar X-ray photodiode assemblies
US6118167A (en) * 1997-11-13 2000-09-12 National Semiconductor Corporation Polysilicon coated nitride-lined shallow trench
AU2185499A (en) * 1998-01-30 1999-08-16 Hamamatsu Photonics K.K. Light-receiving semiconductor device with buit-in bicmos and avalanche photodiode
JP4318773B2 (ja) * 1998-11-12 2009-08-26 株式会社日立メディコ ポジトロン断層撮像装置
JP2001352094A (ja) * 2000-04-06 2001-12-21 Hamamatsu Photonics Kk ホトダイオードアレイ
GB2367945B (en) * 2000-08-16 2004-10-20 Secr Defence Photodetector circuit
US6445037B1 (en) * 2000-09-28 2002-09-03 General Semiconductor, Inc. Trench DMOS transistor having lightly doped source structure
EP1328975B1 (de) 2000-10-19 2011-04-27 Quantum Semiconductor, LLC Verfahren zur herstellung von mit cmos integrierten heteroübergang-photodioden
CN1706346A (zh) * 2001-06-19 2005-12-14 株式会社日立制作所 放射成像设备和放射成像方法
JP4707885B2 (ja) * 2001-06-26 2011-06-22 浜松ホトニクス株式会社 光検出素子
US20040178463A1 (en) * 2002-03-20 2004-09-16 Foveon, Inc. Vertical color filter sensor group with carrier-collection elements of different size and method for fabricating such a sensor group
ATE401666T1 (de) 2002-09-19 2008-08-15 Quantum Semiconductor Llc Licht-detektierende vorrichtung
WO2004102670A2 (en) 2003-05-13 2004-11-25 Koninklijke Philips Electronics N.V. Semiconductor device with a field shaping region
US6762473B1 (en) * 2003-06-25 2004-07-13 Semicoa Semiconductors Ultra thin back-illuminated photodiode array structures and fabrication methods
US8039882B2 (en) * 2003-08-22 2011-10-18 Micron Technology, Inc. High gain, low noise photodiode for image sensors and method of formation
DE102004041556B4 (de) * 2004-08-27 2007-09-20 Infineon Technologies Ag Laterale Schottky-Diode und Verfahren zu ihrer Herstellung
KR101273965B1 (ko) * 2005-04-22 2013-06-12 코닌클리케 필립스 일렉트로닉스 엔.브이. 검출기 픽셀, 방사선 검출기, ｔｏｆ-ｐｅｔ 영상화 시스템, 신틸레이터와 함께 수행되는 방법, 및 의료 영상을 생성하는 방법

Also Published As

Publication number Publication date
US20090065704A1 (en) 2009-03-12
CN104538459A (zh) 2015-04-22
JP2014045198A (ja) 2014-03-13
DE602007012854D1 (de) 2011-04-14
US7759650B2 (en) 2010-07-20
JP5437791B2 (ja) 2014-03-12
EP2013916A1 (de) 2009-01-14
JP5771252B2 (ja) 2015-08-26
WO2007127607A1 (en) 2007-11-08
JP2009535821A (ja) 2009-10-01
EP2013916B1 (de) 2011-03-02
CN101432893A (zh) 2009-05-13

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