ATE505818T1 - Leiter, beschichtet mit einem polykristallinen film verwendbar zur herstellung von hochtemperatursupraleitungsschichten - Google Patents

Leiter, beschichtet mit einem polykristallinen film verwendbar zur herstellung von hochtemperatursupraleitungsschichten

Info

Publication number
ATE505818T1
ATE505818T1 AT06300491T AT06300491T ATE505818T1 AT E505818 T1 ATE505818 T1 AT E505818T1 AT 06300491 T AT06300491 T AT 06300491T AT 06300491 T AT06300491 T AT 06300491T AT E505818 T1 ATE505818 T1 AT E505818T1
Authority
AT
Austria
Prior art keywords
high temperature
polycrystalline film
producing high
temperature superconductive
conductor coated
Prior art date
Application number
AT06300491T
Other languages
English (en)
Inventor
Dirk Isfort
Andre Wolf
Mark Rikel
Original Assignee
Nexans
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=37024068&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE505818(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nexans filed Critical Nexans
Application granted granted Critical
Publication of ATE505818T1 publication Critical patent/ATE505818T1/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632Intermediate layers, e.g. for growth control
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/486Fine ceramics
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/048Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material with layers graded in composition or physical properties
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3227Lanthanum oxide or oxide-forming salts thereof
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/79Non-stoichiometric products, e.g. perovskites (ABO3) with an A/B-ratio other than 1

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Structural Engineering (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Laminated Bodies (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
AT06300491T 2006-05-18 2006-05-18 Leiter, beschichtet mit einem polykristallinen film verwendbar zur herstellung von hochtemperatursupraleitungsschichten ATE505818T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP06300491A EP1858091B1 (de) 2006-05-18 2006-05-18 Leiter, beschichtet mit einem polykristallinen Film verwendbar zur Herstellung von Hochtemperatursupraleitungsschichten

Publications (1)

Publication Number Publication Date
ATE505818T1 true ATE505818T1 (de) 2011-04-15

Family

ID=37024068

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06300491T ATE505818T1 (de) 2006-05-18 2006-05-18 Leiter, beschichtet mit einem polykristallinen film verwendbar zur herstellung von hochtemperatursupraleitungsschichten

Country Status (6)

Country Link
US (1) US7807608B2 (de)
EP (1) EP1858091B1 (de)
JP (1) JP2007307904A (de)
KR (1) KR20070112071A (de)
AT (1) ATE505818T1 (de)
DE (1) DE602006021287D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004038030B4 (de) * 2004-08-05 2007-10-25 Trithor Gmbh Verfahren zur Herstellung eines Hochtemperatur-Supraleiters
CN101312926B (zh) * 2005-11-25 2013-03-27 株式会社村田制作所 透光性陶瓷及其制造方法、以及光学零件及光学装置
ES2319228T3 (es) * 2006-10-27 2009-05-05 Nexans Procedimiento para fabricar un conductor electrico superconductivo.
DE502006008727D1 (de) * 2006-11-17 2011-02-24 Nexans Verfahren zur Herstellung eines supraleitfähigen elektrischen Leiters
ATE529900T1 (de) * 2007-07-02 2011-11-15 Nexans Verfahren zum herstellen eines beschichteten leiters mit vereinfachter schichtarchitektur
DE102008004818B4 (de) * 2008-01-17 2010-07-15 Zenergy Power Gmbh Nasschemisches Verfahren zur Herstellung eines Hochtemperatursupraleiters
FR2940323B1 (fr) 2008-12-18 2011-02-11 Centre Nat Rech Scient Procede de depot de films d'oxydes sur tubes metalliques textures
KR101616465B1 (ko) 2009-11-02 2016-04-28 펄스 테라퓨틱스, 인코포레이티드 기자성 스테이터 시스템 및 마그네틱 로터의 무선제어 방법
CN102610322B (zh) * 2012-03-06 2014-07-30 上海大学 高温超导涂层导体双层缓冲层结构及其动态沉积方法
CN102723141B (zh) * 2012-06-05 2014-10-15 西南交通大学 一种高温超导涂层导体Gd1-xCaxBiO3缓冲层及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2852753B2 (ja) * 1989-02-13 1999-02-03 セイコーエプソン株式会社 酸化物超伝導素子および酸化物超伝導体薄膜の製造方法
JP2844207B2 (ja) * 1989-02-14 1999-01-06 セイコーエプソン株式会社 酸化物超伝導素子および酸化物超伝導体薄膜の製造方法
US6258467B1 (en) * 2000-08-17 2001-07-10 Siemens Westinghouse Power Corporation Thermal barrier coating having high phase stability
US6270908B1 (en) * 1997-09-02 2001-08-07 Ut-Battelle, Llc Rare earth zirconium oxide buffer layers on metal substrates
US6106959A (en) * 1998-08-11 2000-08-22 Siemens Westinghouse Power Corporation Multilayer thermal barrier coating systems
US6632539B1 (en) * 1999-11-29 2003-10-14 Fujikura Ltd. Polycrystalline thin film and method for preparing thereof, and superconducting oxide and method for preparation thereof
US6361598B1 (en) * 2000-07-20 2002-03-26 The University Of Chicago Method for preparing high temperature superconductor
US6410487B1 (en) * 2000-07-20 2002-06-25 The University Of Chicago Large area bulk superconductors
US7261776B2 (en) * 2004-03-30 2007-08-28 American Superconductor Corporation Deposition of buffer layers on textured metal surfaces
US7683010B2 (en) * 2005-07-29 2010-03-23 Ut-Battelle, Llc Doped LZO buffer layers for laminated conductors

Also Published As

Publication number Publication date
EP1858091A1 (de) 2007-11-21
EP1858091B1 (de) 2011-04-13
US20080039330A1 (en) 2008-02-14
DE602006021287D1 (de) 2011-05-26
JP2007307904A (ja) 2007-11-29
US7807608B2 (en) 2010-10-05
KR20070112071A (ko) 2007-11-22

Similar Documents

Publication Publication Date Title
Wu et al. High critical currents in epitaxial YBa2Cu3O7− x thin films on silicon with buffer layers
ATE505818T1 (de) Leiter, beschichtet mit einem polykristallinen film verwendbar zur herstellung von hochtemperatursupraleitungsschichten
CN103635978B (zh) 超导线
CA2417212A1 (en) Thermal barrier coating having high phase stability
Li et al. Realization of Al2O3/MgO laminated structure at low temperature for thin film encapsulation in organic light-emitting diodes
CA2437758A1 (en) Thermal barrier coatings with low thermal conductivity
US20140031236A1 (en) Oxide superconductor, oriented oxide thin film, and method for manufacturing oxide superconductor
JP2015124117A (ja) 金属酸化物薄膜の製造方法
WO2007069524A1 (ja) 厚膜テープ状re系(123)超電導体の製造方法。
CN105551681B (zh) 一种钡铜氧高温超导涂层导体的多层结构
WO2007009095A2 (en) Coated conductors
KR101056227B1 (ko) 초전도체 및 그 제조방법
Zeng et al. Lead–zirconate–titanate thin films deposited on silicon using a novel technique at low temperature
WO2013015328A1 (ja) 超電導薄膜用基材、超電導薄膜及び超電導薄膜の製造方法
Reshmi et al. Photoluminescence of Eu3+-doped Ba0. 7Sr0. 3TiO3 thin film for optoelectronic application
ATE326439T1 (de) Wärmedämmschicht aus einem komplexen perowskit
ATE546419T1 (de) Wärmedämmstoff mit hoher zyklischer temperaturbelastbarkeit
Yang et al. Perfectly (001)‐and (111)‐Oriented (Ba, Sr) TiO3 Thin Films Sputtered on Pt/TiOx/SiO2/Si Without Buffer Layers
EP2800106A1 (de) Verfahren zur herstellung eines superleitenden drahtmaterials und superleitendes drahtmaterial
JP2011146699A5 (ja) フラッシュメモリデバイス用誘電体スタックおよびその作製方法
Yamasaki et al. One-axis-oriented growth of PZT thin films on transparent glass substrates using metal oxide nanosheets
Soultati et al. Impact of microwave post-deposition annealing on the crystallization of amorphous hydrogenated perovskites. The case of the three-dimensional tungsten and of the two-dimensional molybdenum oxide films
JP4744266B2 (ja) Gd―Ba―Cu系酸化物超電導長尺体とその製造方法
Kim et al. Metal-organic deposition of biaxially textured CeO2–based buffer layers
Hori et al. Orientation mechanism during crystallization of apatite-type lanthanum silicate thin films from an amorphous precursor

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties