ATE529900T1 - Verfahren zum herstellen eines beschichteten leiters mit vereinfachter schichtarchitektur - Google Patents

Verfahren zum herstellen eines beschichteten leiters mit vereinfachter schichtarchitektur

Info

Publication number
ATE529900T1
ATE529900T1 AT07111557T AT07111557T ATE529900T1 AT E529900 T1 ATE529900 T1 AT E529900T1 AT 07111557 T AT07111557 T AT 07111557T AT 07111557 T AT07111557 T AT 07111557T AT E529900 T1 ATE529900 T1 AT E529900T1
Authority
AT
Austria
Prior art keywords
coated conductor
producing
layer architecture
simplified layer
simplified
Prior art date
Application number
AT07111557T
Other languages
English (en)
Inventor
Dirk Isfort
Joachim Bock
Judith Driscoll
Ahmed Kursumovic
Original Assignee
Nexans
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nexans filed Critical Nexans
Application granted granted Critical
Publication of ATE529900T1 publication Critical patent/ATE529900T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT07111557T 2007-07-02 2007-07-02 Verfahren zum herstellen eines beschichteten leiters mit vereinfachter schichtarchitektur ATE529900T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP07111557A EP2012373B1 (de) 2007-07-02 2007-07-02 Verfahren zum Herstellen eines beschichteten Leiters mit vereinfachter Schichtarchitektur

Publications (1)

Publication Number Publication Date
ATE529900T1 true ATE529900T1 (de) 2011-11-15

Family

ID=38695482

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07111557T ATE529900T1 (de) 2007-07-02 2007-07-02 Verfahren zum herstellen eines beschichteten leiters mit vereinfachter schichtarchitektur

Country Status (4)

Country Link
US (1) US8008233B2 (de)
EP (1) EP2012373B1 (de)
JP (1) JP5535453B2 (de)
AT (1) ATE529900T1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE495552T1 (de) * 2006-11-17 2011-01-15 Nexans Verfahren zur herstellung eines supraleitfähigen elektrischen leiters
FR2940323B1 (fr) 2008-12-18 2011-02-11 Centre Nat Rech Scient Procede de depot de films d'oxydes sur tubes metalliques textures
EP2472618A1 (de) 2011-01-03 2012-07-04 Nexans Supraleitender ohmischer Fehlerstrombegrenzer
US10068683B1 (en) 2014-06-06 2018-09-04 Southwire Company, Llc Rare earth materials as coating compositions for conductors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6270908B1 (en) 1997-09-02 2001-08-07 Ut-Battelle, Llc Rare earth zirconium oxide buffer layers on metal substrates
US6537689B2 (en) * 1999-11-18 2003-03-25 American Superconductor Corporation Multi-layer superconductor having buffer layer with oriented termination plane
DE60045370D1 (de) 1999-11-29 2011-01-27 Fujikura Ltd Polykristalliner dünner film und verfahren zu dessen herstellung, und supraleitendes oxid und verfahren zu dessen herstellung
JP4713012B2 (ja) * 2000-10-31 2011-06-29 財団法人国際超電導産業技術研究センター テープ状酸化物超電導体
AU2002368162A1 (en) * 2001-04-19 2004-02-25 Imperial College Innovations Limited Long superconductor fabrication
DE102004038030B4 (de) * 2004-08-05 2007-10-25 Trithor Gmbh Verfahren zur Herstellung eines Hochtemperatur-Supraleiters
US7683010B2 (en) * 2005-07-29 2010-03-23 Ut-Battelle, Llc Doped LZO buffer layers for laminated conductors
EP1858091B1 (de) * 2006-05-18 2011-04-13 Nexans Leiter, beschichtet mit einem polykristallinen Film verwendbar zur Herstellung von Hochtemperatursupraleitungsschichten
DE502006002457D1 (de) * 2006-10-27 2009-02-05 Nexans Verfahren zur Herstellung eines supraleitfähigen elektrischen Leiters
ATE495552T1 (de) * 2006-11-17 2011-01-15 Nexans Verfahren zur herstellung eines supraleitfähigen elektrischen leiters

Also Published As

Publication number Publication date
EP2012373A1 (de) 2009-01-07
JP2009043714A (ja) 2009-02-26
US20090105080A1 (en) 2009-04-23
JP5535453B2 (ja) 2014-07-02
EP2012373B1 (de) 2011-10-19
US8008233B2 (en) 2011-08-30

Similar Documents

Publication Publication Date Title
FR2963342B1 (fr) Procede d'obtention d'un materiau comprenant un substrat muni d'un revetement
WO2011090704A3 (en) Method for producing microstructured templates and their use in providing pinning enhancements in superconducting films deposited thereon
ATE542929T1 (de) Verfahren zur ablagerung anorganischer materialien in ausgewählten bereichen
WO2010017558A3 (en) Composite material compositions and methods
WO2015094549A3 (en) Sulfur-containing thin films
EP1921119A4 (de) Fleckenbeständige beschichtungszusammensetzung, fleckenbeständiger beschichtungsfilm, substrat mit dem beschichtungsfilm, verfahren zur formung einer beschichtung auf der oberfläche eines substrats und verfahren zur herstellung der fleckenbeständigkeit eines substrats
TW200604368A (en) Controlled vapor deposition of multilayered coatings adhered by an oxide layer
DE502007001238D1 (de) Verfahren zum aufbringen einer metallischen deckschicht auf einen hochtemperatursupraleiter
WO2008123958A3 (en) Inorganic substrates with hydrophobic surface layers
ATE521728T1 (de) Ausgangsverbindungen zur abscheidung von schichten, die gruppe-4-metalle enthalten
WO2012106184A3 (en) Vapor-deposited coating for barrier films and methods of making and using the same
WO2008063190A3 (en) Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films
GB201216405D0 (en) Multilayer coated wear-resistant member and method for making the same
EP2524979A4 (de) Einkristall-substrat, damit erhaltenes gruppe-iii-element-nitridkrstall und verfahren zur herstellung eines gruppe-iii-element-nitridkrstalls
EP2468928A3 (de) Zusammensetzung und Herstellungsverfahren
DE602007005092D1 (de) Verfahren zur herstellung gesteuerter segregierter phasendomänenstrukturen
EP2707344A4 (de) Verfahren zur selektiven metallisierung der oberfläche eines keramiksubstrats, keramikprodukt sowie verwendung des keramikprodukts
MX359228B (es) Planta de acero que tiene capa galvanizada por inmersión en caliente y que muestra humectabilidad por deposición y adhesión por deposición superior, y método de producción para la misma.
EP1977441A4 (de) Verfahren für verstärktes wachstum semipolarer (ai,in,ga,b)n mittels metallorganischer chemischer dampfabscheidung
ATE360603T1 (de) Bauteile mit kristallinen beschichtungen des systems aluminiumoxid/siliziumoxid und verfahren zu deren herstellung
ATE310715T1 (de) Substrat aus spinel für das heteroepitaktische wachstum von iii-v materialen
MY157422A (en) Water-reactive al-based thermally sprayed film, process for production of such al-based thermally sprayed film, and constituent member for film-forming chamber
EA201000233A1 (ru) Ламинат и композиционный слой, содержащий подложку и покрытие, и способ для их изготовления
WO2013024150A3 (de) Verfahren zur herstellung eines klebebandes
ATE418794T1 (de) Verfahren zur herstellung eines supraleitfähigen elektrischen leiters

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties