ATE508393T1 - Zusammensetzung zur bildung eines antireflexionsfilms, beschichtetes produkt und verfahren zur herstellung einer resiststruktur - Google Patents

Zusammensetzung zur bildung eines antireflexionsfilms, beschichtetes produkt und verfahren zur herstellung einer resiststruktur

Info

Publication number
ATE508393T1
ATE508393T1 AT05809661T AT05809661T ATE508393T1 AT E508393 T1 ATE508393 T1 AT E508393T1 AT 05809661 T AT05809661 T AT 05809661T AT 05809661 T AT05809661 T AT 05809661T AT E508393 T1 ATE508393 T1 AT E508393T1
Authority
AT
Austria
Prior art keywords
antireflection film
producing
composition
forming
meth
Prior art date
Application number
AT05809661T
Other languages
English (en)
Inventor
Nakaatsu Yoshimura
Keiji Konno
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Application granted granted Critical
Publication of ATE508393T1 publication Critical patent/ATE508393T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Ceramic Engineering (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
  • Laminated Bodies (AREA)
AT05809661T 2004-12-03 2005-11-28 Zusammensetzung zur bildung eines antireflexionsfilms, beschichtetes produkt und verfahren zur herstellung einer resiststruktur ATE508393T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004350632 2004-12-03
PCT/JP2005/021756 WO2006059555A1 (ja) 2004-12-03 2005-11-28 反射防止膜形成用組成物、積層体およびレジストパターンの形成方法

Publications (1)

Publication Number Publication Date
ATE508393T1 true ATE508393T1 (de) 2011-05-15

Family

ID=36564988

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05809661T ATE508393T1 (de) 2004-12-03 2005-11-28 Zusammensetzung zur bildung eines antireflexionsfilms, beschichtetes produkt und verfahren zur herstellung einer resiststruktur

Country Status (9)

Country Link
US (1) US7709182B2 (de)
EP (1) EP1818723B1 (de)
JP (1) JP4525683B2 (de)
KR (1) KR100966197B1 (de)
CN (1) CN101080674B (de)
AT (1) ATE508393T1 (de)
DE (1) DE602005027888D1 (de)
TW (1) TWI383264B (de)
WO (1) WO2006059555A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4322205B2 (ja) * 2004-12-27 2009-08-26 東京応化工業株式会社 レジスト保護膜形成用材料およびこれを用いたレジストパターン形成方法
US7544750B2 (en) * 2005-10-13 2009-06-09 International Business Machines Corporation Top antireflective coating composition with low refractive index at 193nm radiation wavelength
JP5088326B2 (ja) * 2006-10-13 2012-12-05 Ｊｓｒ株式会社 上層膜形成用組成物及びフォトレジストパターン形成方法
KR101433565B1 (ko) * 2007-09-26 2014-08-27 제이에스알 가부시끼가이샤 액침용 상층막 형성용 조성물 및 액침용 상층막 및 포토레지스트 패턴 형성 방법
KR101357611B1 (ko) * 2008-01-31 2014-02-03 주식회사 동진쎄미켐 에칭률이 우수한 유기 반사방지막 형성용 중합체 및 이를포함하는 조성물
JP5228792B2 (ja) * 2008-10-23 2013-07-03 Ｊｓｒ株式会社 上層反射防止膜形成用組成物及び上層反射防止膜
JP2010128136A (ja) * 2008-11-27 2010-06-10 Jsr Corp 上層反射防止膜形成用組成物、上層反射防止膜及びパターン形成方法
JP5177418B2 (ja) * 2008-12-12 2013-04-03 信越化学工業株式会社 反射防止膜形成材料、反射防止膜及びこれを用いたパターン形成方法
US20120214722A1 (en) * 2009-10-22 2012-08-23 Mitsubishi Gas Chemical Company Inc. Treatment solution for preventing pattern collapse in metal fine structure body, and process for production of metal fine structure body using same
JP5741589B2 (ja) * 2010-09-08 2015-07-01 三菱瓦斯化学株式会社 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法
CN103907060B (zh) * 2011-10-20 2018-05-01 日产化学工业株式会社 形成抗蚀剂下层膜的组合物所用的添加剂及包含该添加剂的形成抗蚀剂下层膜的组合物
FR2986004B1 (fr) * 2012-01-25 2014-03-14 Seppic Sa Nouveau polymere epaississant reduisant le caractere collant des formules cosmetiques a base de glycerine
JPWO2015122296A1 (ja) 2014-02-12 2017-03-30 日産化学工業株式会社 フッ素含有界面活性剤を含む膜形成組成物
CN113296360B (zh) * 2021-05-21 2024-06-14 上海邃铸科技有限公司 用于光刻胶组合物的酸抑制剂、制备方法及光刻胶组合物

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US205474A (en) * 1878-07-02 Improvement in lathes for turning ovals
US10742A (en) * 1854-04-04 Enema-syringe
US52845A (en) * 1866-02-27 Improved edge-plane for boots and shoes
US6008A (en) * 1849-01-09 Pkoto-litho
US2025850A (en) * 1933-10-12 1935-12-31 Crompton & Knowles Loom Works Method of weaving pile fabrics
JPS5836037B2 (ja) 1980-06-27 1983-08-06 ダイキン工業株式会社 含フツ素界面活性剤組成物
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPS6052845A (ja) 1983-09-02 1985-03-26 Japan Synthetic Rubber Co Ltd パタ−ン形成材料
JPH0225850A (ja) 1988-07-15 1990-01-29 Hitachi Ltd 放射線感応性組成物およびそれを用いたパターン形成法
JPH05507154A (ja) 1990-09-18 1993-10-14 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 酸触媒レジスト用保護膜
US5514526A (en) 1992-06-02 1996-05-07 Mitsubishi Chemical Corporation Fluorine-containing composition for forming anti-reflection film on resist surface and pattern formation method
JP3416196B2 (ja) * 1992-06-02 2003-06-16 シップレーカンパニー エル エル シー レジスト表面反射防止膜形成性組成物及びパターン形成方法
FI950730L (fi) * 1992-08-17 1995-04-10 Quadra Logic Tech Inc Menetelmä ei-toivottujen solujen tai kudosten kasvun tuhoamiseksi tai ehkäisemiseksi
JP3192505B2 (ja) * 1992-11-13 2001-07-30 東京応化工業株式会社 半導体素子製造用パターン形成方法
DE4340140A1 (de) * 1993-11-25 1995-06-01 Basf Ag Katalysatorsysteme vom Typ der Ziegler-Natta-Katalysatoren
JP3344063B2 (ja) 1994-02-24 2002-11-11 ジェイエスアール株式会社 塩基遮断性反射防止膜およびレジストパターンの形成方法
US5631314A (en) * 1994-04-27 1997-05-20 Tokyo Ohka Kogyo Co., Ltd. Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition
US5611850A (en) * 1995-03-23 1997-03-18 Mitsubishi Chemical Corporation Composition for anti-reflective coating on resist
JPH0950129A (ja) * 1995-05-30 1997-02-18 Shin Etsu Chem Co Ltd 反射防止膜材料及びパターン形成方法
JPH096008A (ja) * 1995-06-15 1997-01-10 Shin Etsu Chem Co Ltd 水溶性パターン形成材料
JPH0990615A (ja) * 1995-09-27 1997-04-04 Shin Etsu Chem Co Ltd 反射防止膜材料及びパターン形成方法
JPH1010742A (ja) 1996-06-21 1998-01-16 Konica Corp 光重合性感光材料及び感光性平版印刷版
US5994430A (en) * 1997-04-30 1999-11-30 Clariant Finance Bvi) Limited Antireflective coating compositions for photoresist compositions and use thereof
JP3673399B2 (ja) * 1998-06-03 2005-07-20 クラリアント インターナショナル リミテッド 反射防止コーティング用組成物
FI114855B (fi) * 1999-07-09 2005-01-14 Outokumpu Oy Menetelmä reiän tulppaamiseksi ja menetelmällä valmistettu jäähdytyselementti
JP2002105433A (ja) * 2000-10-02 2002-04-10 Lion Corp フッ素含有表面処理剤
JP3666807B2 (ja) * 2001-12-03 2005-06-29 東京応化工業株式会社 ホトレジストパターンの形成方法およびホトレジスト積層体
JP2004054209A (ja) 2002-05-27 2004-02-19 Jsr Corp パターン形成方法および感放射線性樹脂組成物
US7038328B2 (en) 2002-10-15 2006-05-02 Brewer Science Inc. Anti-reflective compositions comprising triazine compounds
EP1718387A2 (de) * 2004-01-27 2006-11-08 Entegris, Inc. Verfahren zur entfernung von mikrobläschen aus einer flüssigkeit
JP2006047351A (ja) * 2004-07-30 2006-02-16 Asahi Glass Co Ltd フォトレジスト保護膜用組成物、フォトレジスト保護膜およびフォトレジストパターン形成方法
US7234514B2 (en) * 2004-08-02 2007-06-26 Asml Holding N.V. Methods and systems for compact, micro-channel laminar heat exchanging
CN101031597B (zh) * 2004-09-30 2010-04-14 Jsr株式会社 共聚物及形成上层膜用组合物

Also Published As

Publication number Publication date
TW200641541A (en) 2006-12-01
DE602005027888D1 (de) 2011-06-16
WO2006059555A1 (ja) 2006-06-08
TWI383264B (zh) 2013-01-21
CN101080674A (zh) 2007-11-28
US7709182B2 (en) 2010-05-04
KR100966197B1 (ko) 2010-06-25
KR20070086151A (ko) 2007-08-27
CN101080674B (zh) 2013-09-18
JP4525683B2 (ja) 2010-08-18
US20080124524A1 (en) 2008-05-29
EP1818723A4 (de) 2009-07-01
EP1818723B1 (de) 2011-05-04
EP1818723A1 (de) 2007-08-15
JPWO2006059555A1 (ja) 2008-08-07

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