ATE510242T1 - Ablagerungsminderungssystem mit verbesserter gasverteilung - Google Patents

Ablagerungsminderungssystem mit verbesserter gasverteilung

Info

Publication number
ATE510242T1
ATE510242T1 AT06756065T AT06756065T ATE510242T1 AT E510242 T1 ATE510242 T1 AT E510242T1 AT 06756065 T AT06756065 T AT 06756065T AT 06756065 T AT06756065 T AT 06756065T AT E510242 T1 ATE510242 T1 AT E510242T1
Authority
AT
Austria
Prior art keywords
gas distribution
reduction system
improved gas
foil trap
several
Prior art date
Application number
AT06756065T
Other languages
English (en)
Inventor
Guenther Hans Derra
Thomas Kruecken
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE510242T1 publication Critical patent/ATE510242T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
AT06756065T 2005-06-14 2006-06-06 Ablagerungsminderungssystem mit verbesserter gasverteilung ATE510242T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05105210 2005-06-14
PCT/IB2006/051795 WO2006134512A2 (en) 2005-06-14 2006-06-06 Debris mitigation system with improved gas distribution

Publications (1)

Publication Number Publication Date
ATE510242T1 true ATE510242T1 (de) 2011-06-15

Family

ID=37461465

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06756065T ATE510242T1 (de) 2005-06-14 2006-06-06 Ablagerungsminderungssystem mit verbesserter gasverteilung

Country Status (8)

Country Link
US (1) US8873021B2 (de)
EP (1) EP1896903B1 (de)
JP (1) JP4981795B2 (de)
KR (1) KR101298214B1 (de)
CN (1) CN101218543A (de)
AT (1) ATE510242T1 (de)
TW (1) TWI395248B (de)
WO (1) WO2006134512A2 (de)

Families Citing this family (18)

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US7397056B2 (en) 2005-07-06 2008-07-08 Asml Netherlands B.V. Lithographic apparatus, contaminant trap, and device manufacturing method
US20070115443A1 (en) * 2005-11-23 2007-05-24 Asml Netherlands B.V. Radiation system and lithographic apparatus
JP5103976B2 (ja) 2007-03-23 2012-12-19 ウシオ電機株式会社 ホイルトラップ及びこのホイルトラップを用いた極端紫外光光源装置
US7602472B2 (en) * 2007-06-12 2009-10-13 Asml Netherlands B.V. Contamination prevention system, lithographic apparatus, radiation source, and method for manufacturing a device
JP2011504657A (ja) 2007-11-22 2011-02-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 照射装置内に配置された集光器光学部品の動作寿命を延ばす方法及び対応の照射装置
KR101606436B1 (ko) 2008-02-28 2016-03-28 코닌클리케 필립스 엔.브이. 회전하는 포일 트랩 및 구동 어셈블리를 갖는 파편 경감 장치
NL2003181A1 (nl) 2008-07-14 2010-01-18 Asml Netherlands Bv A source module of an EUV lithographic apparatus, a lithographic apparatus, and a method for manufacturing a device.
JP5732392B2 (ja) * 2008-08-14 2015-06-10 エーエスエムエル ネザーランズ ビー．ブイ． 放射源およびリソグラフィ装置
NL2003610A (en) 2008-12-22 2010-06-23 Asml Netherlands Bv A lithographic apparatus, a radiation system, a device manufacturing method and a radiation generating method.
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
EP2478417B1 (de) 2009-09-18 2013-07-03 Koninklijke Philips Electronics N.V. Folien-falle vorrichtung mit verbesserter wärmebeständigkeit
JP5732525B2 (ja) * 2010-04-22 2015-06-10 エーエスエムエル ネザーランズ ビー．ブイ． コレクタミラーアセンブリおよび極端紫外線放射の生成方法
WO2013068197A1 (en) * 2011-11-10 2013-05-16 Asml Netherlands B.V. Particle trap for euv source
DE102012217120A1 (de) * 2012-09-24 2014-03-27 Trumpf Laser- Und Systemtechnik Gmbh EUV-Strahlungserzeugungsvorrichtung und Betriebsverfahren dafür
WO2014127151A1 (en) 2013-02-14 2014-08-21 Kla-Tencor Corporation System and method for producing an exclusionary buffer gas flow in an euv light source
WO2014131016A1 (en) 2013-02-25 2014-08-28 Kla-Tencor Corporation Method and system for gas flow mitigation of molecular contamination of optics
DE102014222674B3 (de) * 2014-11-06 2016-05-25 Carl Zeiss Smt Gmbh EUV-Lithographiesystem
JP6759732B2 (ja) * 2016-06-08 2020-09-23 ウシオ電機株式会社 デブリトラップおよび光源装置

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DE3808629C1 (en) 1988-03-15 1989-08-10 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Beam guidance system
US6586757B2 (en) * 1997-05-12 2003-07-01 Cymer, Inc. Plasma focus light source with active and buffer gas control
NL1008352C2 (nl) 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
DE19962160C2 (de) 1999-06-29 2003-11-13 Fraunhofer Ges Forschung Vorrichtungen zur Erzeugung von Extrem-Ultraviolett- und weicher Röntgenstrahlung aus einer Gasentladung
US6972421B2 (en) * 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
US6576912B2 (en) * 2001-01-03 2003-06-10 Hugo M. Visser Lithographic projection apparatus equipped with extreme ultraviolet window serving simultaneously as vacuum window
JP2003022950A (ja) * 2001-07-05 2003-01-24 Canon Inc Ｘ線光源用デブリ除去装置及び、デブリ除去装置を用いた露光装置
US6714624B2 (en) 2001-09-18 2004-03-30 Euv Llc Discharge source with gas curtain for protecting optics from particles
WO2003034153A2 (en) 2001-10-12 2003-04-24 Koninklijke Philips Electronics N.V. Lithographic apparatus and device manufacturing method
EP1532639A2 (de) * 2002-07-26 2005-05-25 Bede Plc Optisches bauelement für energiereiche strahlung
SG108933A1 (en) 2002-08-23 2005-02-28 Asml Netherlands Bv Lithographic projection apparatus and particle barrier for use in said apparatus
EP1434098B1 (de) 2002-12-23 2006-03-08 ASML Netherlands B.V. Kontaminationsschutz mit ausdehnbaren Lamellen
US8945310B2 (en) 2003-05-22 2015-02-03 Koninklijke Philips Electronics N.V. Method and device for cleaning at least one optical component
US7230258B2 (en) * 2003-07-24 2007-06-12 Intel Corporation Plasma-based debris mitigation for extreme ultraviolet (EUV) light source
JP4241281B2 (ja) * 2003-09-17 2009-03-18 キヤノン株式会社 露光装置
EP1531365A1 (de) * 2003-11-11 2005-05-18 ASML Netherlands B.V. Lithographischer Apparat mit Unterdrückung von Kontamination
US7061574B2 (en) * 2003-11-11 2006-06-13 Asml Netherlands B.V. Lithographic apparatus with contamination suppression, device manufacturing method, and device manufactured thereby
JP4763684B2 (ja) 2004-03-31 2011-08-31 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 放射線源により生じる粒子の除去
US7307263B2 (en) * 2004-07-14 2007-12-11 Asml Netherlands B.V. Lithographic apparatus, radiation system, contaminant trap, device manufacturing method, and method for trapping contaminants in a contaminant trap
US7145132B2 (en) * 2004-12-27 2006-12-05 Asml Netherlands B.V. Lithographic apparatus, illumination system and debris trapping system
DE102005020521B4 (de) * 2005-04-29 2013-05-02 Xtreme Technologies Gmbh Verfahren und Anordnung zur Unterdrückung von Debris bei der Erzeugung kurzwelliger Strahlung auf Basis eines Plasmas

Also Published As

Publication number Publication date
TWI395248B (zh) 2013-05-01
JP4981795B2 (ja) 2012-07-25
TW200705506A (en) 2007-02-01
KR101298214B1 (ko) 2013-08-22
CN101218543A (zh) 2008-07-09
US20080212044A1 (en) 2008-09-04
KR20080020680A (ko) 2008-03-05
JP2008547193A (ja) 2008-12-25
WO2006134512A3 (en) 2007-03-29
EP1896903B1 (de) 2011-05-18
EP1896903A2 (de) 2008-03-12
WO2006134512A2 (en) 2006-12-21
US8873021B2 (en) 2014-10-28

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