ATE510242T1 - Ablagerungsminderungssystem mit verbesserter gasverteilung - Google Patents

Ablagerungsminderungssystem mit verbesserter gasverteilung

Info

Publication number
ATE510242T1
ATE510242T1 AT06756065T AT06756065T ATE510242T1 AT E510242 T1 ATE510242 T1 AT E510242T1 AT 06756065 T AT06756065 T AT 06756065T AT 06756065 T AT06756065 T AT 06756065T AT E510242 T1 ATE510242 T1 AT E510242T1
Authority
AT
Austria
Prior art keywords
gas distribution
reduction system
improved gas
foil trap
several
Prior art date
Application number
AT06756065T
Other languages
English (en)
Inventor
Guenther Hans Derra
Thomas Kruecken
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE510242T1 publication Critical patent/ATE510242T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
AT06756065T 2005-06-14 2006-06-06 Ablagerungsminderungssystem mit verbesserter gasverteilung ATE510242T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05105210 2005-06-14
PCT/IB2006/051795 WO2006134512A2 (en) 2005-06-14 2006-06-06 Debris mitigation system with improved gas distribution

Publications (1)

Publication Number Publication Date
ATE510242T1 true ATE510242T1 (de) 2011-06-15

Family

ID=37461465

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06756065T ATE510242T1 (de) 2005-06-14 2006-06-06 Ablagerungsminderungssystem mit verbesserter gasverteilung

Country Status (8)

Country Link
US (1) US8873021B2 (de)
EP (1) EP1896903B1 (de)
JP (1) JP4981795B2 (de)
KR (1) KR101298214B1 (de)
CN (1) CN101218543A (de)
AT (1) ATE510242T1 (de)
TW (1) TWI395248B (de)
WO (1) WO2006134512A2 (de)

Families Citing this family (18)

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US7397056B2 (en) * 2005-07-06 2008-07-08 Asml Netherlands B.V. Lithographic apparatus, contaminant trap, and device manufacturing method
US20070115443A1 (en) * 2005-11-23 2007-05-24 Asml Netherlands B.V. Radiation system and lithographic apparatus
JP5103976B2 (ja) * 2007-03-23 2012-12-19 ウシオ電機株式会社 ホイルトラップ及びこのホイルトラップを用いた極端紫外光光源装置
US7602472B2 (en) * 2007-06-12 2009-10-13 Asml Netherlands B.V. Contamination prevention system, lithographic apparatus, radiation source, and method for manufacturing a device
CN101868764A (zh) 2007-11-22 2010-10-20 皇家飞利浦电子股份有限公司 增加设置在照射设备中的聚集器光学器件的操作寿命的方法及相应的照射设备
JP5475693B2 (ja) 2008-02-28 2014-04-16 コーニンクレッカ フィリップス エヌ ヴェ 回転フォイルトラップ及び駆動装置を持つデブリ低減装置
NL2003181A1 (nl) 2008-07-14 2010-01-18 Asml Netherlands Bv A source module of an EUV lithographic apparatus, a lithographic apparatus, and a method for manufacturing a device.
JP5732392B2 (ja) * 2008-08-14 2015-06-10 エーエスエムエル ネザーランズ ビー．ブイ． 放射源およびリソグラフィ装置
JP5577351B2 (ja) 2008-12-22 2014-08-20 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置および放射システム
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
WO2011033447A1 (en) 2009-09-18 2011-03-24 Koninklijke Philips Electronics N.V. Foil trap device with improved heat resistance
WO2011131431A1 (en) 2010-04-22 2011-10-27 Asml Netherlands B.V. Collector mirror assembly and method for producing extreme ultraviolet radiation
WO2013068197A1 (en) * 2011-11-10 2013-05-16 Asml Netherlands B.V. Particle trap for euv source
DE102012217120A1 (de) * 2012-09-24 2014-03-27 Trumpf Laser- Und Systemtechnik Gmbh EUV-Strahlungserzeugungsvorrichtung und Betriebsverfahren dafür
WO2014127151A1 (en) * 2013-02-14 2014-08-21 Kla-Tencor Corporation System and method for producing an exclusionary buffer gas flow in an euv light source
EP2959504B1 (de) 2013-02-25 2018-07-04 Kla-Tencor Corporation Verfahren und system zur gasdurchflussreduzierung in molekularen verunreinigungen von optischen elementen
DE102014222674B3 (de) * 2014-11-06 2016-05-25 Carl Zeiss Smt Gmbh EUV-Lithographiesystem
JP6759732B2 (ja) * 2016-06-08 2020-09-23 ウシオ電機株式会社 デブリトラップおよび光源装置

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DE3808629C1 (en) 1988-03-15 1989-08-10 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Beam guidance system
US6586757B2 (en) * 1997-05-12 2003-07-01 Cymer, Inc. Plasma focus light source with active and buffer gas control
NL1008352C2 (nl) 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
DE19962160C2 (de) 1999-06-29 2003-11-13 Fraunhofer Ges Forschung Vorrichtungen zur Erzeugung von Extrem-Ultraviolett- und weicher Röntgenstrahlung aus einer Gasentladung
US6972421B2 (en) * 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
US6576912B2 (en) * 2001-01-03 2003-06-10 Hugo M. Visser Lithographic projection apparatus equipped with extreme ultraviolet window serving simultaneously as vacuum window
JP2003022950A (ja) 2001-07-05 2003-01-24 Canon Inc Ｘ線光源用デブリ除去装置及び、デブリ除去装置を用いた露光装置
US6714624B2 (en) 2001-09-18 2004-03-30 Euv Llc Discharge source with gas curtain for protecting optics from particles
WO2003034153A2 (en) * 2001-10-12 2003-04-24 Koninklijke Philips Electronics N.V. Lithographic apparatus and device manufacturing method
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TWI229242B (en) 2002-08-23 2005-03-11 Asml Netherlands Bv Lithographic projection apparatus and particle barrier for use in said apparatus
EP1434098B1 (de) 2002-12-23 2006-03-08 ASML Netherlands B.V. Kontaminationsschutz mit ausdehnbaren Lamellen
KR101095394B1 (ko) * 2003-05-22 2011-12-16 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 하나 이상의 광학 컴포넌트를 클리닝하기 위한 방법 및장치
US7230258B2 (en) * 2003-07-24 2007-06-12 Intel Corporation Plasma-based debris mitigation for extreme ultraviolet (EUV) light source
JP4241281B2 (ja) * 2003-09-17 2009-03-18 キヤノン株式会社 露光装置
EP1531365A1 (de) * 2003-11-11 2005-05-18 ASML Netherlands B.V. Lithographischer Apparat mit Unterdrückung von Kontamination
SG112047A1 (en) * 2003-11-11 2005-06-29 Asml Netherlands Bv Lithographic apparatus with contamination suppression, device manufacturing method, and device manufactured thereby
EP1743221B1 (de) 2004-03-31 2016-01-06 Philips Intellectual Property & Standards GmbH Beseitigung von durch eine strahlungsquelle erzeugten teilchen
US7307263B2 (en) * 2004-07-14 2007-12-11 Asml Netherlands B.V. Lithographic apparatus, radiation system, contaminant trap, device manufacturing method, and method for trapping contaminants in a contaminant trap
US7145132B2 (en) * 2004-12-27 2006-12-05 Asml Netherlands B.V. Lithographic apparatus, illumination system and debris trapping system
DE102005020521B4 (de) * 2005-04-29 2013-05-02 Xtreme Technologies Gmbh Verfahren und Anordnung zur Unterdrückung von Debris bei der Erzeugung kurzwelliger Strahlung auf Basis eines Plasmas

Also Published As

Publication number Publication date
US8873021B2 (en) 2014-10-28
KR20080020680A (ko) 2008-03-05
KR101298214B1 (ko) 2013-08-22
EP1896903A2 (de) 2008-03-12
WO2006134512A2 (en) 2006-12-21
JP2008547193A (ja) 2008-12-25
TW200705506A (en) 2007-02-01
CN101218543A (zh) 2008-07-09
TWI395248B (zh) 2013-05-01
JP4981795B2 (ja) 2012-07-25
US20080212044A1 (en) 2008-09-04
EP1896903B1 (de) 2011-05-18
WO2006134512A3 (en) 2007-03-29

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