ATE514115T1 - Optisches projektionssystem, belichtungsgeräte und belichtungsverfahren - Google Patents

Optisches projektionssystem, belichtungsgeräte und belichtungsverfahren

Info

Publication number
ATE514115T1
ATE514115T1 AT05799383T AT05799383T ATE514115T1 AT E514115 T1 ATE514115 T1 AT E514115T1 AT 05799383 T AT05799383 T AT 05799383T AT 05799383 T AT05799383 T AT 05799383T AT E514115 T1 ATE514115 T1 AT E514115T1
Authority
AT
Austria
Prior art keywords
plane
optical system
projection optical
image
numerical aperture
Prior art date
Application number
AT05799383T
Other languages
English (en)
Inventor
Youhei Fujishima
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=36336372&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE514115(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nikon Corp filed Critical Nikon Corp
Application granted granted Critical
Publication of ATE514115T1 publication Critical patent/ATE514115T1/de

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/22—Telecentric objectives or lens systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
AT05799383T 2004-11-10 2005-10-26 Optisches projektionssystem, belichtungsgeräte und belichtungsverfahren ATE514115T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004326141 2004-11-10
PCT/JP2005/019689 WO2006051689A1 (ja) 2004-11-10 2005-10-26 投影光学系、露光装置、および露光方法

Publications (1)

Publication Number Publication Date
ATE514115T1 true ATE514115T1 (de) 2011-07-15

Family

ID=36336372

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05799383T ATE514115T1 (de) 2004-11-10 2005-10-26 Optisches projektionssystem, belichtungsgeräte und belichtungsverfahren

Country Status (6)

Country Link
US (1) US20080123074A1 (de)
EP (1) EP1816502B1 (de)
KR (1) KR20070083543A (de)
AT (1) ATE514115T1 (de)
TW (1) TW200616043A (de)
WO (1) WO2006051689A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US20080151365A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
WO2005071491A2 (en) 2004-01-20 2005-08-04 Carl Zeiss Smt Ag Exposure apparatus and measuring device for a projection lens
KR101213831B1 (ko) 2004-05-17 2012-12-24 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
US8027023B2 (en) 2006-05-19 2011-09-27 Carl Zeiss Smt Gmbh Optical imaging device and method for reducing dynamic fluctuations in pressure difference
JP5253081B2 (ja) * 2008-10-14 2013-07-31 キヤノン株式会社 投影光学系、露光装置及びデバイスの製造方法
CN102662307B (zh) * 2012-05-02 2014-03-12 中国科学院光电技术研究所 一种高分辨率投影光学系统
CN103149808B (zh) * 2013-02-27 2015-02-18 中国科学院光电技术研究所 一种浸没式紫外光学系统
JP7434761B2 (ja) * 2019-09-05 2024-02-21 オムロン株式会社 三次元計測装置用光学アセンブリおよびこれを備えた三次元計測装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
DE59105735D1 (de) 1990-05-02 1995-07-20 Fraunhofer Ges Forschung Belichtungsvorrichtung.
US5229872A (en) * 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
WO1997033204A1 (en) 1996-03-04 1997-09-12 Asm Lithography B.V. Lithopraphic apparatus for step-and-scan imaging of a mask pattern
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
EP1134793A4 (de) * 1998-06-17 2006-07-26 Nikon Corp Belichtungsmethode und belichtungsapparat
US7187503B2 (en) * 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
EP1242843B1 (de) * 1999-12-29 2006-03-22 Carl Zeiss SMT AG Projektionsobjektiv mit benachbart angeordneten asphärischen linsenoberflächen
DE10229249A1 (de) * 2002-03-01 2003-09-04 Zeiss Carl Semiconductor Mfg Refraktives Projektionsobjektiv mit einer Taille
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
KR20040104691A (ko) * 2002-05-03 2004-12-10 칼 짜이스 에스엠테 아게 높은 개구를 갖는 투영 대물렌즈
CN100462844C (zh) 2002-08-23 2009-02-18 株式会社尼康 投影光学系统、微影方法、曝光装置及使用此装置的方法
JP2004205698A (ja) * 2002-12-24 2004-07-22 Nikon Corp 投影光学系、露光装置および露光方法
AU2003304557A1 (en) * 2003-10-22 2005-06-08 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography

Also Published As

Publication number Publication date
KR20070083543A (ko) 2007-08-24
WO2006051689A1 (ja) 2006-05-18
EP1816502A1 (de) 2007-08-08
US20080123074A1 (en) 2008-05-29
TW200616043A (en) 2006-05-16
EP1816502A4 (de) 2009-09-30
EP1816502B1 (de) 2011-06-22

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