ATE514179T1 - Verfahren zur herstellung einer nitridbasierten halbleiteroptikvorrichtung - Google Patents

Verfahren zur herstellung einer nitridbasierten halbleiteroptikvorrichtung

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Publication number
ATE514179T1
ATE514179T1 AT10151354T AT10151354T ATE514179T1 AT E514179 T1 ATE514179 T1 AT E514179T1 AT 10151354 T AT10151354 T AT 10151354T AT 10151354 T AT10151354 T AT 10151354T AT E514179 T1 ATE514179 T1 AT E514179T1
Authority
AT
Austria
Prior art keywords
reactor
indium
well layer
source
temperature
Prior art date
Application number
AT10151354T
Other languages
English (en)
Inventor
Yohei Enya
Yusuke Yoshizumi
Masaki Ueno
Takashi Kyono
Katsushi Akita
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Application granted granted Critical
Publication of ATE514179T1 publication Critical patent/ATE514179T1/de

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
AT10151354T 2009-01-23 2010-01-22 Verfahren zur herstellung einer nitridbasierten halbleiteroptikvorrichtung ATE514179T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009013327A JP5136437B2 (ja) 2009-01-23 2009-01-23 窒化物系半導体光素子を作製する方法

Publications (1)

Publication Number Publication Date
ATE514179T1 true ATE514179T1 (de) 2011-07-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
AT10151354T ATE514179T1 (de) 2009-01-23 2010-01-22 Verfahren zur herstellung einer nitridbasierten halbleiteroptikvorrichtung

Country Status (7)

Country Link
US (1) US8048702B2 (de)
EP (1) EP2214197B1 (de)
JP (1) JP5136437B2 (de)
KR (1) KR20100086958A (de)
CN (1) CN101789474B (de)
AT (1) ATE514179T1 (de)
TW (1) TW201114060A (de)

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JP5515575B2 (ja) * 2009-09-30 2014-06-11 住友電気工業株式会社 Ｉｉｉ族窒化物半導体光素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体光素子を作製する方法
WO2012058444A1 (en) * 2010-10-27 2012-05-03 The Regents Of The University Of California High power, high efficiency and low efficiency droop iii-nitride light-emitting diodes on semipolar {20-2-1} substrates
TWI415301B (zh) * 2011-01-10 2013-11-11 Genesis Photonics Inc 氮化物系半導體發光結構
JP5113305B2 (ja) * 2011-01-21 2013-01-09 パナソニック株式会社 窒化ガリウム系化合物半導体発光素子および当該発光素子を備える光源
EP2718988A2 (de) 2011-06-10 2014-04-16 The Regents of the University of California Lichtemittierende diodenstruktur mit geringer regeldifferenz auf semipolaren galliumnitridsubstraten
JP5252042B2 (ja) * 2011-07-21 2013-07-31 住友電気工業株式会社 Ｉｉｉ族窒化物半導体発光素子、及びｉｉｉ族窒化物半導体発光素子を作製する方法
CN103178178A (zh) * 2013-04-08 2013-06-26 合肥彩虹蓝光科技有限公司 一种提高氮化镓基发光二极管电子迁移率的结构及其生产方法
US9048389B2 (en) 2013-09-23 2015-06-02 Industrial Technology Research Institute Light emitting diode
CN105742434B (zh) * 2016-05-16 2018-05-11 安徽三安光电有限公司 一种氮化物发光二极管及其制备方法
JP6841344B2 (ja) * 2017-12-01 2021-03-10 三菱電機株式会社 半導体装置の製造方法、半導体装置
WO2021044489A1 (ja) * 2019-09-02 2021-03-11 日本碍子株式会社 半導体膜
CN113013302A (zh) * 2021-02-26 2021-06-22 东莞市中麒光电技术有限公司 InGaN基红光LED芯片结构的制备方法
CN117747725A (zh) * 2023-12-15 2024-03-22 北京大学 一种长波长InGaN基发光二极管的外延结构及其制备方法

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JP3454200B2 (ja) * 1998-09-21 2003-10-06 日亜化学工業株式会社 発光素子
JP2001102633A (ja) * 1999-07-26 2001-04-13 Sharp Corp 窒化物系化合物半導体発光素子の製造方法
JP2001057442A (ja) * 1999-08-19 2001-02-27 Sharp Corp Ｉｉｉ−ｖ族窒化物半導体の製造方法
FR2807909B1 (fr) * 2000-04-12 2006-07-28 Centre Nat Rech Scient COUCHE MINCE SEMI-CONDUCTRICE DE GaInN, SON PROCEDE DE PREPARATION; DEL COMPRENANT CETTE COUCHE ET DISPOSITIF D'ECLAIRAGE COMPRENANT CETTE DEL
JP4822608B2 (ja) * 2001-05-14 2011-11-24 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
JP4784012B2 (ja) * 2001-07-27 2011-09-28 日亜化学工業株式会社 窒化物半導体基板、及びその製造方法
US6645885B2 (en) * 2001-09-27 2003-11-11 The National University Of Singapore Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
US6887727B2 (en) * 2003-01-28 2005-05-03 Agilent Technologies, Inc. System and method for increasing nitrogen incorporation into a semiconductor material layer using an additional element
JP2005228789A (ja) * 2004-02-10 2005-08-25 Sharp Corp 半導体デバイスの製造方法およびそれにより得られる半導体発光素子
JP4389723B2 (ja) * 2004-02-17 2009-12-24 住友電気工業株式会社 半導体素子を形成する方法
KR100513923B1 (ko) * 2004-08-13 2005-09-08 재단법인서울대학교산학협력재단 질화물 반도체층을 성장시키는 방법 및 이를 이용하는 질화물 반도체 발광소자
JP4617922B2 (ja) * 2005-02-25 2011-01-26 ソニー株式会社 半導体装置の製造方法
WO2006109840A1 (en) * 2005-04-07 2006-10-19 Showa Denko K.K. Production method of group iii nitride semioconductor element
CN100576586C (zh) * 2005-04-07 2009-12-30 昭和电工株式会社 制造ⅲ族氮化物半导体元件的方法
JP2008028121A (ja) * 2006-07-20 2008-02-07 Hitachi Cable Ltd 半導体発光素子の製造方法
EP2323180A1 (de) * 2008-09-11 2011-05-18 Sumitomo Electric Industries, Ltd. Optische nitridhalbleitervorrichtung, epitaxialwafer für eine optische nitridhalbleitervorrichtung sowie verfahren zur herstellung der nitridhalbleitervorrichtung

Also Published As

Publication number Publication date
CN101789474B (zh) 2013-11-06
KR20100086958A (ko) 2010-08-02
CN101789474A (zh) 2010-07-28
EP2214197B1 (de) 2011-06-22
TW201114060A (en) 2011-04-16
JP2010171267A (ja) 2010-08-05
JP5136437B2 (ja) 2013-02-06
US20100190284A1 (en) 2010-07-29
US8048702B2 (en) 2011-11-01
EP2214197A1 (de) 2010-08-04

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