ATE514186T1 - Integrierter schaltkreis mit mosfet- sicherungselement - Google Patents

Integrierter schaltkreis mit mosfet- sicherungselement

Info

Publication number
ATE514186T1
ATE514186T1 AT09716959T AT09716959T ATE514186T1 AT E514186 T1 ATE514186 T1 AT E514186T1 AT 09716959 T AT09716959 T AT 09716959T AT 09716959 T AT09716959 T AT 09716959T AT E514186 T1 ATE514186 T1 AT E514186T1
Authority
AT
Austria
Prior art keywords
mos
fuse
measured
value
parameter
Prior art date
Application number
AT09716959T
Other languages
English (en)
Inventor
Hsung Im
Sunhom Paak
Boon Ang
Original Assignee
Xilinx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xilinx Inc filed Critical Xilinx Inc
Application granted granted Critical
Publication of ATE514186T1 publication Critical patent/ATE514186T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
AT09716959T 2008-03-06 2009-02-20 Integrierter schaltkreis mit mosfet- sicherungselement ATE514186T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/043,914 US8564023B2 (en) 2008-03-06 2008-03-06 Integrated circuit with MOSFET fuse element
PCT/US2009/034749 WO2009111187A1 (en) 2008-03-06 2009-02-20 Integrated circuit with mosfet fuse element

Publications (1)

Publication Number Publication Date
ATE514186T1 true ATE514186T1 (de) 2011-07-15

Family

ID=40513889

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09716959T ATE514186T1 (de) 2008-03-06 2009-02-20 Integrierter schaltkreis mit mosfet- sicherungselement

Country Status (7)

Country Link
US (1) US8564023B2 (de)
EP (1) EP2250671B1 (de)
JP (1) JP5253522B2 (de)
CN (1) CN101965637B (de)
AT (1) ATE514186T1 (de)
CA (1) CA2713153C (de)
WO (1) WO2009111187A1 (de)

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US9460807B2 (en) * 2010-08-20 2016-10-04 Shine C. Chung One-time programmable memory devices using FinFET technology
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US11574867B2 (en) * 2020-11-25 2023-02-07 Globalfoundries U.S. Inc. Non-planar silicided semiconductor electrical fuse
CN105762137B (zh) * 2014-12-15 2020-09-08 联华电子股份有限公司 熔丝结构以及其监控方式
US10598703B2 (en) 2015-07-20 2020-03-24 Eaton Intelligent Power Limited Electric fuse current sensing systems and monitoring methods
US9627373B2 (en) 2015-08-25 2017-04-18 International Business Machines Corporation CMOS compatible fuse or resistor using self-aligned contacts
US9805815B1 (en) * 2016-08-18 2017-10-31 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical fuse bit cell and mask set
US10643006B2 (en) * 2017-06-14 2020-05-05 International Business Machines Corporation Semiconductor chip including integrated security circuit
US10163783B1 (en) 2018-03-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Reduced area efuse cell structure
US11289298B2 (en) 2018-05-31 2022-03-29 Eaton Intelligent Power Limited Monitoring systems and methods for estimating thermal-mechanical fatigue in an electrical fuse
US11143718B2 (en) 2018-05-31 2021-10-12 Eaton Intelligent Power Limited Monitoring systems and methods for estimating thermal-mechanical fatigue in an electrical fuse
US11715540B2 (en) * 2022-01-05 2023-08-01 Nanya Technology Corporation Anti-fuse device
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Also Published As

Publication number Publication date
CN101965637B (zh) 2013-01-16
WO2009111187A1 (en) 2009-09-11
EP2250671A1 (de) 2010-11-17
CA2713153A1 (en) 2009-09-11
US8564023B2 (en) 2013-10-22
US20090224323A1 (en) 2009-09-10
CN101965637A (zh) 2011-02-02
EP2250671B1 (de) 2011-06-22
JP5253522B2 (ja) 2013-07-31
JP2011515836A (ja) 2011-05-19
CA2713153C (en) 2014-02-11

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